公开(公告)号：US20180076032A1

公开(公告)日：2018-03-15

申请号：US15695180

申请日：2017-09-05

Applicant: Applied Materials, Inc.

Inventor： Jiarui WANG ,  Prashant Kumar KULSHRESHTHA ,  Eswaranand VENKATASUBRAMANIAN ,  Susmit Singha ROY ,  Kwangduk Douglas LEE

IPC: H01L21/033 ,  H01L21/02 ,  H01L27/11556 ,  H01L27/11582 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34

CPC classification number: H01L21/0332 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/342 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/67103 ,  H01L21/6831 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.

公开(公告)号：US20170352586A1

公开(公告)日：2017-12-07

申请号：US15175880

申请日：2016-06-07

Applicant: Applied Materials, Inc.

Inventor： Eswaranand VENKATASUBRAMANIAN ,  Susmit Singha ROY ,  Pramit MANNA ,  Abhijit Basu MALLICK

IPC: H01L21/768 ,  H01L27/1157 ,  H01L23/522 ,  H01L27/11524 ,  H01L23/528 ,  H01L21/033 ,  H01L27/11582 ,  H01L27/11556

CPC classification number: H01L21/76816 ,  H01L21/0332 ,  H01L21/0335 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/5283 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582

Abstract: Embodiments of the present disclosure provide an apparatus and methods for forming a hardmask layer that may be utilized to transfer patterns or features to a film stack with accurate profiles and dimension control for manufacturing three dimensional (3D) stacked semiconductor devices. In one embodiment, a method of forming a hardmask layer on a substrate includes forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in a processing chamber, forming a transition layer comprising born and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber, and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.