公开(公告)号：US20210294215A1

公开(公告)日：2021-09-23

申请号：US16825388

申请日：2020-03-20

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Srinivas D. NEMANI ,  Steven Hiloong WELCH ,  Mangesh Ashok BANGAR ,  Ellie Y. YIEH

IPC: G03F7/20 ,  H01L21/266 ,  H01L21/027 ,  H01L21/311 ,  G03F7/16 ,  G03F7/38

Abstract: A method for enhancing a photoresist profile control includes applying a photoresist layer comprising a photoacid generator on an underlayer disposed on a material layer, exposing a first portion of the photoresist layer unprotected by a photomask to light radiation in a lithographic exposure process, providing a thermal energy to the photoresist layer in a post-exposure baking process, applying an electric field or a magnetic field while performing the post-exposure baking process, and drifting photoacid from the photoresist layer to a predetermined portion of the underlayer under the first portion of the photoresist layer.

公开(公告)号：US20210041785A1

公开(公告)日：2021-02-11

申请号：US16989698

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Huixiong DAI ,  Mangesh Ashok BANGAR ,  Pinkesh Rohit SHAH ,  Christopher Siu Wing NGAI ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: G03F7/16 ,  G03F7/20

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. A method of processing a substrate is provided. The method includes applying a photoresist layer that includes a photoacid generator to a multi-layer disposed on the substrate. The multi-layer includes an underlayer. Further, the method includes exposing a first portion of the photoresist layer unprotected by a photomask to a radiation light in a lithographic exposure process. A thermal energy is provided to the photoresist layer and the multi-layer in a post-exposure baking process. The multi-layer is disposed beneath the photoresist layer. An electric field or a magnetic field is applied to photoresist layer and the multi-layer while performing the post-exposure baking process. An additive within the underlayer is driven in a vertical direction into the photoresist layer. The additive assist in distribution of a photoacid throughout the photoresist layer during the post-exposure baking process.

公开(公告)号：US20180101103A1

公开(公告)日：2018-04-12

申请号：US15829809

申请日：2017-12-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Mangesh BANGAR ,  Bruce E. ADAMS ,  Kelly E. HOLLAR ,  Abhilash J. MAYUR ,  Huixiong DAI ,  Jaujiun CHEN

IPC: G03F7/20

CPC classification number: G03F7/70633

Abstract: A calibration curve for a wafer comprising a layer on a substrate is determined. The calibration curve represents a local parameter change as a function of a treatment parameter associated with a wafer exposure to a light. The local parameter of the wafer is measured. An overlay error is determined based on the local parameter of the wafer. A treatment map is computed based on the calibration curve to correct the overlay error for the wafer. The treatment map represents the treatment parameter as a function of a location on the wafer.

公开(公告)号：US20160042951A1

公开(公告)日：2016-02-11

申请号：US14878514

申请日：2015-10-08

Applicant: Applied Materials, Inc.

Inventor： Christopher Dennis BENCHER ,  Daniel Lee DIEHL ,  Huixiong DAI ,  Yong CAO ,  Tingjun XU ,  Weimin (Wilson) ZENG ,  Peng XIE

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/311 ,  H01L21/308 ,  C23C14/35 ,  C23C14/14

CPC classification number: H01L21/0337 ,  C23C14/0042 ,  C23C14/06 ,  C23C14/14 ,  C23C14/351 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02266 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31138 ,  H01L21/31144

Abstract: The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or combination of the preceding including a variation which includes controlled doping of hydrogen into the compounds heretofore referred to as SiOxNyCz:Hw, where w, x, y, and z can vary in concentration from 0% to 100%, is produced as a hardmask with optical properties that are substantially matched to the photo-resists at the exposure wavelength. Thus making the hardmask optically planarized with respect to the photo-resist. This allows for multiple sequences of litho and etches in the hardmask while the photo-resist maintains essentially no optical topography or reflectivity variations.

Abstract translation: 本文的实施方案提供了用于形成PVD氧化硅或富硅氧化物或PVD SiN或富硅SiN或富SiC或富硅SiC的方法或前述组合，包括将氢控制掺入到迄今为止参考的化合物 作为SiO x N y C z：H w，其中w，x，y和z可以在0％至100％的浓度范围内变化，作为具有与曝光波长下的光致抗蚀剂基本匹配的光学性质的硬掩模。 因此使相对于光致抗蚀剂光学平坦化的硬掩模。 这允许在硬掩模中的多个序列的光刻和蚀刻，而光致抗蚀剂基本上保持没有光学形貌或反射率变化。

公开(公告)号：US20150371879A1

公开(公告)日：2015-12-24

申请号：US14476398

申请日：2014-09-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Christopher S. NGAI ,  Huixiong DAI ,  Ludovic GODET ,  Ellie Y. YIEH

IPC: H01L21/67 ,  B08B1/00

CPC classification number: B08B1/001 ,  B08B1/00 ,  B08B1/008 ,  B08B6/00 ,  B08B7/0028 ,  H01L21/67028 ,  H01L21/67253 ,  H01L21/6831 ,  H01L21/68742

Abstract: Particulate cleaning assemblies and methods for cleaning are disclosed. In one example, a device for removing particles from a backside surface of a substrate is described. The device includes a chamber body with a substrate chucking device, a particulate cleaning article positioned over the substrate supporting surface, an optical sensing device positioned under the particulate cleaning article and a substrate positioning device separates the particulate cleaning article and a substrate. In another example, a method for removing particles from a substrate is disclosed. The method includes positioning a substrate with a processing surface and a supporting surface in a process chamber. At least a portion of the substrate can be chucked to a substrate chucking device, the substrate chucking device having a substrate supporting surface with a particulate cleaning article positioned thereon. The substrate is then separated from the particulate cleaning article leaving particles behind.

Abstract translation: 公开了微粒清洁组件和清洁方法。 在一个实例中，描述了用于从基板的背面去除颗粒的装置。 该装置包括具有衬底夹持装置的腔室主体，位于衬底支撑表面上方的微粒清洁制品，位于微粒清洁制品下方的光学感测装置和分离颗粒清洁制品和衬底的基板定位装置。 在另一个实例中，公开了一种从衬底去除颗粒的方法。 该方法包括将具有处理表面和支撑表面的基板定位在处理室中。 衬底的至少一部分可以被夹持到衬底夹紧装置，衬底夹持装置具有衬底支撑表面，其上定位有微粒清洁制品。 然后将基底与颗粒清洁制品分离，留下颗粒。