公开(公告)号：US09472417B2

公开(公告)日：2016-10-18

申请号：US14513517

申请日：2014-10-14

Applicant: Applied Materials, Inc.

Inventor： Nitin K. Ingle ,  Jessica Sevanne Kachian ,  Lin Xu ,  Soonam Park ,  Xikun Wang ,  Jeffrey W. Anthis

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/02 ,  C23F1/02 ,  C23F1/12 ,  H01J37/32 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768

CPC classification number: H01L21/3065 ,  C23F1/02 ,  C23F1/12 ,  C23F4/00 ,  H01J37/3244 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/02071 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/76814

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract translation: 描述了从衬底表面选择性地蚀刻含金属材料的方法。 蚀刻相对于含硅膜如硅，多晶硅，氧化硅，硅锗，碳化硅，氮化硅和/或氮化硅选择性去除含金属的材料。 这些方法包括将含金属的材料暴露于基底处理区域中含有卤素的物质。 在实施例中，没有等离子体远程地或局部地激发含卤素的前体。

公开(公告)号：US09349605B1

公开(公告)日：2016-05-24

申请号：US14821542

申请日：2015-08-07

Applicant: Applied Materials, Inc.

Inventor： Lin Xu ,  Zhijun Chen ,  Anchuan Wang ,  Son T. Nguyen

IPC: H01L21/302 ,  H01L21/311 ,  H01J37/32 ,  C23C16/455 ,  C23C16/50 ,  H01L21/3065 ,  H01L21/3213

CPC classification number: H01J37/3244 ,  C23C16/45565 ,  C23C16/50 ,  H01J37/32009 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/32715 ,  H01J37/32899 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67069

Abstract: Embodiments of the present technology may include a method of etching a substrate. The method may include striking a plasma discharge in a plasma region. The method may also include flowing a fluorine-containing precursor into the plasma region to form a plasma effluent. The plasma effluent may flow into a mixing region. The method may further include introducing a hydrogen-and-oxygen-containing compound into the mixing region without first passing the hydrogen-and-oxygen-containing compound into the plasma region. Additionally, the method may include reacting the hydrogen-and-oxygen-containing compound with the plasma effluent in the mixing region to form reaction products. The reaction products may flow through a plurality of openings in a partition to a substrate processing region. The method may also include etching the substrate with the reaction products in the substrate processing region.

Abstract translation: 本技术的实施例可以包括蚀刻衬底的方法。 该方法可以包括在等离子体区域中击打等离子体放电。 该方法还可以包括将含氟前体流入等离子体区域以形成等离子体流出物。 等离子体流出物可能流入混合区域。 该方法可以进一步包括将含氢和氧的化合物引入混合区域，而不首先使含氢氧化合物进入等离子体区域。 此外，该方法可以包括使含氢和氧的化合物与混合区域中的等离子体流出物反应以形成反应产物。 反应产物可以流过分隔件中的多个开口到基底处理区域。 该方法还可以包括在衬底处理区域中用反应产物蚀刻衬底。