公开(公告)号：US06704269B1

公开(公告)日：2004-03-09

申请号：US09328773

申请日：1999-06-09

申请人： Atsushi Ogawa

发明人： Atsushi Ogawa

IPC分类号： G11B700

CPC分类号： G11B7/00456

摘要： In accordance with a length of a pit to be recorded, a laser power irradiation time is controlled to have a length of (n−K)T +&Dgr;3T, where nT represents the length of a pit to be formed, K is a constant and &Dgr;3T represents an extra laser power value for addition to recording of a 3T pit. The control section also performs control for imparting an additional top power pulse to an initial part of each pit-forming laser power irradiation so as to increase a level of the laser power over a standard recording power level temporarily for a predetermined time period during the irradiation. The K and &Dgr;3T values and the level of the additional top power pulse are optimized for each selected recording speed. This arrangement always achieves optimum reproductive characteristics of signals recorded on cyanine-based or phthalocyanine-based optical disks at any selected recording speeds.

摘要翻译： 根据要记录的凹坑的长度，激光功率照射时间被控制为具有（nK）T + Delta3T的长度，其中nT表示要形成的凹坑的长度，K是常数，Delta3T表示 一个额外的激光功率值，用于添加到3T坑的记录。 控制部还执行用于赋予每个凹坑形成激光功率照射的初始部分的附加顶部功率脉冲的控制，以便在照射期间临时提高标准记录功率水平的激光功率水平预定时间段 。 针对每个选定的记录速度优化K和Delta3T值和附加顶部功率脉冲的电平。 这种布置总是以任何选择的记录速度实现在基于花青类或基于酞菁的光盘上记录的信号的最佳生殖特性。

公开(公告)号：US06474371B1

公开(公告)日：2002-11-05

申请号：US09933076

申请日：2001-08-21

申请人： Atsushi Ogawa ,  Toshiaki Tamura

发明人： Atsushi Ogawa ,  Toshiaki Tamura

IPC分类号： B65B104

CPC分类号： B30B11/022 ,  B22F3/004 ,  B30B15/304 ,  H01F41/0253

摘要： A powder pressing apparatus includes a powder feeding apparatus for supply of a powder such as a rare-earth alloy powder into a cavity of a tooling. The powder feeding apparatus includes a feeder box having a bottom face provided with an opening. Inside the feeder box, there are provided a hopper for supply of the powder into the cavity, a feeder for supply of the powder to the hopper, and a vibration generator for vibration of the hopper. Surfaces of the feeder and hopper to contact the powder are mirror-polished. Leg portions are provided in two sides of the bottom face parallel to a moving direction of the feeder box. The leg portions make the bottom face of the feeder box spaced from an opening of the cavity. The powder supplied to the powder feeding apparatus is weighed by a weighing unit. The opening of the feeder box is provided with a linear member arranged in a grid pattern having a regular pitch. The linear member is rotationally shaken in a horizontal plane when the powder is fed into the cavity. The linear member is shaken in a stroke greater than the pitch at which the linear member is arranged.

摘要翻译： 粉末压制装置包括用于将诸如稀土合金粉末的粉末供给到工具的空腔中的粉末供给装置。 粉末供给装置包括具有设置有开口的底面的进料盒。 在供料盒内设有一个用于将粉末供应到空腔中的料斗，用于将料粉供给料斗的进料器和用于料斗振动的振动发生器。 与粉末接触的进料器和料斗表面经过镜面抛光。 腿部设置在平行于给料盒移动方向的底面两侧。 腿部使得进料盒的底面与空腔的开口间隔开。 供给粉末供给装置的粉末由称重单元称重。 给料盒的开口设置有以具有规则间距的网格图案布置的线性构件。 当粉末进料到空腔中时，线性构件在水平面中旋转摇动。 线性构件在大于排列线性构件的间距的行程中被摇动。

公开(公告)号：US06455877B1

公开(公告)日：2002-09-24

申请号：US09657875

申请日：2000-09-08

申请人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

发明人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

IPC分类号： H01L3300

CPC分类号： H01L33/32 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

摘要： A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1×1017 cm−3 to 1×1021 cm−3. The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.

摘要翻译： 提供具有n型电极的低比接触电阻以及低阈值电压或阈值电流密度的GaN发光器件。 GaN发光器件具有形成在GaN衬底的氮封端表面上的电极。 具体地，GaN发光器件包括GaN衬底，形成在GaN衬底上的多个GaN化合物半导体层，以及n型电极和p型电极，其中半导体衬底为n型， n型电极形成在半导体衬底的氮封端表面上。 衬底中n型杂质的浓度优选为1×10 17 cm -3至1×10 21 cm -3。 基板优选至少包括形成氮封端表面并具有第一浓度的n型杂质的第一部分和具有比第一浓度的n型杂质低的n型杂质的第二浓度的第二部分。

公开(公告)号：US06314196B1

公开(公告)日：2001-11-06

申请号：US08813627

申请日：1997-03-07

申请人： Masahiko Yamaguchi ,  Yasuo Ooka ,  Naoya Uchida ,  Atsushi Ogawa ,  Kiyohide Taniguchi

发明人： Masahiko Yamaguchi ,  Yasuo Ooka ,  Naoya Uchida ,  Atsushi Ogawa ,  Kiyohide Taniguchi

IPC分类号： G06K900

CPC分类号： H01L27/14868 ,  G06K9/00067 ,  G06T7/33 ,  H01L27/14825

摘要： The present invention can achieve the reliability and simplicity in registering a fingerprint by indicating the quality of a fingerprint image by the number of pseudo minutiae, improve the security of an entrance/exit control system to register a fingerprint, detect the direction of ridge lines of a fingerprint accurately as much as possible, improve the security in checking a fingerprint remarkably, collect renewed registered fingerprint data by a host device and hold the registered fingerprint data of each gate as the latest fingerprint data, improve the operability by enabling to use identification numbers having the less number of digits, and register a fingerprint having a high match rate by automatically applying spatial filtering in re-registering only. A fingerprint registering method according to the present invention detects normal minutiae and pseudo minutiae in a fingerprint pictured by a fingerprint image pickup unit, counts pseudo minutiae in registering windows with normal minutiae at almost the center, determines the average number of pseudo minutiae in registering windows from a total of pseudo minutiae in all registering windows, and registers a fingerprint when the average number of pseudo minutiae is equal to or below a threshold.

摘要翻译： 本发明可以通过指纹图像的质量指示伪细节数来实现登记指纹的可靠性和简单性，提高入口/出口控制系统登记指纹的安全性，检测指纹图案的方向 指纹尽可能准确，提高了指纹检查的安全性，通过主机设备收集更新的注册指纹数据，并保存每个门的注册指纹数据作为最新的指纹数据，通过使用识别号码提高可操作性 具有较少数字的数字，并通过自动应用空间过滤仅重新注册来登记具有高匹配率的指纹。 根据本发明的指纹登记方法检测由指纹图像拾取单元所示的指纹中的正常细节和伪细节，在几乎中心记录具有正常细节的窗口中计数伪细节，确定登记窗口中的平均细节数 在所有注册窗口中的总细数，并且当平均伪细节数等于或低于阈值时，登记指纹。

公开(公告)号：USD386392S

公开(公告)日：1997-11-18

申请号：US54755

申请日：1996-05-21

申请人： Atsushi Ogawa

设计人： Atsushi Ogawa

公开(公告)号：US5411614A

公开(公告)日：1995-05-02

申请号：US292617

申请日：1994-08-18

申请人： Atsushi Ogawa ,  Kuninori Minakawa ,  Kazuhide Takahashi

发明人： Atsushi Ogawa ,  Kuninori Minakawa ,  Kazuhide Takahashi

IPC分类号： C22C14/00

CPC分类号： C22C14/00

摘要： A method of making a titanium base alloy comprising the steps of heating a titanium base alloy to a temperature ranging from .beta.-transus minus 250.degree. C. to .beta.-transus; and hot working the heated alloy with a reduction ratio of at least 50%. The titanium base alloy consists essentially of about 3.42 to 5 wt. % Al, 2.1 to 3.7 wt. % V, 0.85 to 2.37 wt. % Mo, at least 0.01 wt. % O, at least one element selected from the group consisting of Fe, Co, Cr, and the balance being titanium. The invention also includes superplastic forming of said alloys. The titanium alloy satisfies the following equations:0.85 wt. %.ltoreq.X wt. %.ltoreq.3.15 wt. %,7 wt. %.ltoreq.Y wt. %.ltoreq.13 wt. %,X wt. %=Fe wt. %+Co wt. %+0.9 Cr wt. %Y wt. %=2.times.Fe wt. %+2.times.Co wt. %+1.8.times.Cr wt. %+1.5.times.V wt. %+Mo wt. %.

摘要翻译： 一种制备钛基合金的方法，包括以下步骤：将钛基合金加热至β-transus-250℃至β-transus的温度范围; 并将加热合金热压至少50％。 钛基合金基本上由约3.42至5wt。 ％Al，2.1〜3.7wt。 ％V，0.85〜2.37重量％ ％Mo，至少0.01重量％ ％O，选自Fe，Co，Cr中的至少一种元素，余量为钛。 本发明还包括所述合金的超塑性成形。 钛合金满足以下等式：0.85重量％ ％

公开(公告)号：US4517520A

公开(公告)日：1985-05-14

申请号：US407601

申请日：1982-08-12

申请人： Atsushi Ogawa

发明人： Atsushi Ogawa

IPC分类号： H03D1/22 ,  H03K5/00

CPC分类号： H03D1/2227

摘要： In converting a staircase waveform signal into a smoothed analog signal, this circuit can perform the high-quality conversion without any sophisticated lowpass filter. An input staircase signal is delayed for one stepping interval to produce a differential signal which represents a stepping height at each step, by taking the difference between the input staircase signal and the one stepping interval delayed version thereof. The differential signal is integrated at every stepping interval. The integrated voltage forms a sawtooth wave signal which is in turn additively combined with the one stepping interval delayed version of the input staircase signal. The resulted combined signal is a smoothed signal of the input staircase signal.

摘要翻译： 在将楼梯波形信号转换为平滑的模拟信号时，该电路可以执行高质量的转换，而无需任何复杂的低通滤波器。 输入阶梯信号延迟一个步进间隔，通过取输入阶梯信号与其一个步进间隔延迟版本之间的差值，产生一个差分信号，该差分信号代表每一步的步进高度。 差分信号以每个步进间隔积分。 积分电压形成锯齿波信号，其又与输入阶梯信号的一个步进间隔延迟版本相加地组合。 所得到的组合信号是输入阶梯信号的平滑信号。

公开(公告)号：US08657085B2

公开(公告)日：2014-02-25

申请号：US13261006

申请日：2010-05-12

申请人： Atsushi Ogawa

发明人： Atsushi Ogawa

IPC分类号： F16F9/36

CPC分类号： F16F9/0218 ,  F16F9/3221 ,  F16F9/3415

摘要： An air damper capable of stabilizing a damping force of the air damper is obtained.When a rod member (16) is pulled out of a cylinder member (20), a suction member (60) hits against the other side surface (56) of a piston member (30) so as to close an air passage (28), and an airflow path communicating between an air chamber (26) and an outside is only orifice portions (42). On the other hand, when the rod member (16) is pushed into the cylinder member (20), the suction member (60) moves away from the other side surface (56) of the piston member (30) so as to open the air passage (28). Consequently, compared to a conventional structure in which an O-ring rolls by a friction force with an inner peripheral surface of a cylinder so as to open or close the air passage, the air passage (28) can be opened and closed as intended so as to be capable of stabilizing the damping force.

摘要翻译： 获得能够稳定空气阻尼器的阻尼力的空气阻尼器。 当杆构件（16）从气缸构件（20）中被拉出时，抽吸构件（60）撞击活塞构件（30）的另一侧表面（56），以闭合空气通道（28） 并且在空气室（26）和外部之间连通的气流路径仅仅是孔部分（42）。 另一方面，当将杆构件（16）推入气缸构件（20）时，吸引构件（60）远离活塞构件（30）的另一侧面（56）移动，从而打开 空气通道（28）。 因此，与通过与气缸的内周面的摩擦力卷绕O形环以打开或关闭空气通道的常规结构相比，空气通道（28）可以按预期打开和关闭 以便能够稳定阻尼力。

公开(公告)号：US08596430B2

公开(公告)日：2013-12-03

申请号：US13321094

申请日：2010-06-17

申请人： Atsushi Ogawa

发明人： Atsushi Ogawa

IPC分类号： F16F15/03

CPC分类号： B60G17/015 ,  B60G17/06 ,  B60G2300/60 ,  F16F15/03 ,  F16F15/035 ,  F16F2232/06 ,  H02P3/12

摘要： An electrical shock absorber 20 of the present embodiment includes a motor 21, which is rotated by approaching and separating motions between sprung and unsprung members which approach and separate from each other; and an electric circuit 50, which connects the electric terminals of the motor 21 so as to cause current to flow through the motor 21. The electric circuit 50 includes P-channel JFETs 56, 60. The gate of the P-channel JFET 56, 60 is connected to one electric terminal of the motor 21, and the source of the P-channel JFET 56, 60 is connected to the other electric terminal of the motor 21. Therefore, the induced voltage is applied to the gate. The induced voltage represents the stroke speed of the electrical shock absorber 20. Therefore, the gate voltage VGS is changed on the basis of the above-mentioned relative speed such that the gate voltage VGS increases with the stroke speed of the electrical shock absorber 20. By means of changing the gate voltage VGS in this manner, the magnitude of the induced current flowing through the electric circuit 50 is limited by the P-channel JFETs 56, 60 on the basis of the characteristic of the P-channel JFET 56, 60 in terms of change of drain-source current iDS with the gate voltage VGS.

摘要翻译： 本实施例的减震器20包括电动机21，其通过接近和分离彼此接近和分离的弹簧和簧下构件之间的运动而旋转; 电路50连接电动机21的电端子以使电流流过电动机21.电路50包括P沟道JFET 56,60。P沟道JFET 56的栅极， 60连接到电动机21的一个电气端子，并且P沟道JFET 56,60的源极连接到电动机21的另一个电端子。因此，感应电压被施加到栅极。 感应电压表示减震器20的冲程速度。因此，基于上述相对速度改变栅极电压VGS，使得栅极电压VGS随着减震器20的冲程速度而增加。 通过以这种方式改变栅极电压VGS，流过电路50的感应电流的大小由P沟道JFET 56,60基于P沟道JFET 56,60的特性来限制 就栅极电压VGS的漏极 - 源极电流iDS的变化而言。

公开(公告)号：US20130277684A1

公开(公告)日：2013-10-24

申请号：US13977456

申请日：2011-12-21

申请人： Masahiro Araki ,  Shinya Yoshida ,  Haruhisa Takiguchi ,  Atsushi Ogawa ,  Takao Kinoshita ,  Tohru Murata ,  Takeshi Funaki ,  Masayuki Hoteida

发明人： Masahiro Araki ,  Shinya Yoshida ,  Haruhisa Takiguchi ,  Atsushi Ogawa ,  Takao Kinoshita ,  Tohru Murata ,  Takeshi Funaki ,  Masayuki Hoteida

IPC分类号： H01L29/20 ,  H01L21/02

CPC分类号： H01L29/2003 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/812 ,  H01L33/007 ,  H01L33/12 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided.

摘要翻译： 一种氮化物半导体结构，其中在具有凹部的基板上设置有第一氮化物半导体下层，在其表面设置有位于所述凹部之间的突出部，所述第一氮化物半导体下层具有至少6个第一倾斜面平面， 突出部分的外侧的突出部分和第二氮化物半导体下层掩埋第一倾斜面面，氮化物半导体发光元件，氮化物半导体晶体管元件，氮化物半导体结构的制造方法和 提供了制造氮化物半导体元件的方法。