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    III-N compound semiconductor device
    3.
    发明授权
    III-N compound semiconductor device 有权
    III-N族化合物半导体器件

    公开(公告)号：US06455877B1

    公开(公告)日：2002-09-24

    申请号：US09657875

    申请日：2000-09-08

    申请人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

    发明人： Atsushi Ogawa ,  Takayuki Yuasa ,  Yoshihiro Ueta ,  Yuhzoh Tsuda ,  Masahiro Araki ,  Mototaka Taneya

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  H01L33/025 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/32341

    摘要： A GaN light-emitting device is provided having a low specific contact resistance of an n-type electrode as well as a low threshold voltage or threshold current density. The GaN light-emitting device has an electrode formed on a nitrogen-terminated surface of a GaN substrate. Specifically, the GaN light-emitting device includes the GaN substrate, a plurality of GaN compound semiconductor layers formed on the GaN substrate, and the n-type electrode and a p-type electrode, wherein the semiconductor substrate is of n-type and the n-type electrode is formed on the nitrogen-terminated surface of the semiconductor substrate. The concentration of n-type impurities in the substrate preferably ranges from 1×1017 cm−3 to 1×1021 cm−3. The substrate preferably includes at least a first portion forming the nitrogen-terminated surface and having a first concentration of n-type impurities and a second portion having a second concentration of n-type impurities lower than the first concentration of n-type impurities.

    摘要翻译： 提供具有n型电极的低比接触电阻以及低阈值电压或阈值电流密度的GaN发光器件。 GaN发光器件具有形成在GaN衬底的氮封端表面上的电极。 具体地，GaN发光器件包括GaN衬底，形成在GaN衬底上的多个GaN化合物半导体层，以及n型电极和p型电极，其中半导体衬底为n型， n型电极形成在半导体衬底的氮封端表面上。 衬底中n型杂质的浓度优选为1×10 17 cm -3至1×10 21 cm -3。 基板优选至少包括形成氮封端表面并具有第一浓度的n型杂质的第一部分和具有比第一浓度的n型杂质低的n型杂质的第二浓度的第二部分。

    NITRIDE SEMICONDUCTOR DEVICE
    9.
    发明申请
    NITRIDE SEMICONDUCTOR DEVICE 审中-公开
    氮化物半导体器件

    公开(公告)号：US20130161640A1

    公开(公告)日：2013-06-27

    申请号：US13727082

    申请日：2012-12-26

    申请人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    发明人： Eiji Yamada ,  Takeshi Kamikawa ,  Masahiro Araki

    IPC分类号： H01L29/06

    CPC分类号： H01S5/32341 ,  H01L21/0237 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L33/16 ,  H01L33/32

    摘要： A nitride semiconductor device is provided that prevents development of cracks, that has nitride semiconductor thin films with uniform thicknesses and good growth surface flatness, and is thus consistent in characteristics, and that can be fabricated at a satisfactory yield. In this nitride semiconductor device, the nitride semiconductor thin films are grown on a substrate having an off-angle between a direction normal to the surface of ridges and the crystal direction . This helps either reduce or intentionally promote diffusion or movement of the atoms or molecules of a source material of the nitride semiconductor thin films through migration thereof. As a result, a nitride semiconductor growth layer with good surface flatness can be formed, and thus a nitride semiconductor device with satisfactory characteristics can be obtained.

    摘要翻译： 提供了防止具有均匀厚度的氮化物半导体薄膜和良好的生长面平坦度的裂纹的发展的氮化物半导体装置，因此具有一致的特性，并且可以以令人满意的产量制造。 在这种氮化物半导体器件中，氮化物半导体薄膜在垂直于脊表面的方向与晶体方向<0001>之间具有偏角的衬底上生长。 这有助于通过其移动来减少或有意地促进氮化物半导体薄膜的源材料的原子或分子的扩散或移动。 结果，可以形成具有良好表面平坦度的氮化物半导体生长层，因此可以获得具有令人满意的特性的氮化物半导体器件。

    Vapor deposition apparatus
    10.
    发明申请
    Vapor deposition apparatus 审中-公开
    蒸镀装置

    公开(公告)号：US20060065197A1

    公开(公告)日：2006-03-30

    申请号：US11235188

    申请日：2005-09-27

    申请人： Eiji Yamada ,  Takayuki Yuasa ,  Masahiro Araki ,  Nakao Akutsu

    发明人： Eiji Yamada ,  Takayuki Yuasa ,  Masahiro Araki ,  Nakao Akutsu

    IPC分类号： C23C16/00

    CPC分类号： C23C16/455 ,  C23C16/54

    摘要： A vapor deposition apparatus of the present invention has a substrate holder having a substrate holding surface for holding a substrate thereon, and a flow channel for supplying a source gas onto the substrate. The flow channel has an upper wall and a lower wall. An aperture portion is provided in the lower wall of the flow channel. The substrate holding surface of the substrate holder fits in the aperture portion while forming a space between the substrate holding surface and the aperture portion. A means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided. With this structure, since a means for reducing leakage of gas through the space between the aperture portion and the substrate holder is provided, the conductance with respect to outflow of gas increases, which in turn reduces variations in the amount of outflow gas. This results in high yield production of nitride semiconductor devices with a long life and high light-emission efficiency.

    摘要翻译： 本发明的蒸镀装置具有：基板保持具，具有用于保持基板的基板保持面，以及用于将源气体供给到基板上的流路。 流动通道具有上壁和下壁。 开口部设置在流路的下壁。 在衬底保持表面和孔部之间形成空间的同时，衬底保持器的衬底保持表面装配在孔部分中。 提供了一种用于减少气体通过开口部分和衬底保持器之间的空间的泄漏的装置。 利用这种结构，由于提供了用于减少气体通过开口部和基板保持架之间的空气的泄漏的装置，所以相对于气体流出的电导性增加，从而减小流出气体量的变化。 这导致具有长寿命和高发光效率的氮化物半导体器件的高产量生产。