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公开(公告)号:US20240097042A1
公开(公告)日:2024-03-21
申请号:US17781773
申请日:2021-06-25
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Lizhong WANG , Guangcai YUAN , Ce NING , Nianqi YAO , Hehe HU , Liping LEI , Dongfang WANG , Dapeng XUE , Shuilang DONG , Zhengliang LI
IPC: H01L29/786 , H01L29/417 , H01L29/423 , H01L29/66
CPC classification number: H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66742
Abstract: At least one embodiment of the present disclosure provides an oxide thin film transistor, a display device, and a preparation method of the oxide thin film transistor, and the oxide thin film transistor includes a base substrate; an oxide semiconductor layer provided on the base substrate, and an insulating layer provided on a side of the oxide semiconductor layer away from the base substrate; in which the insulating layer is made of oxide; the insulating layer includes a first insulating layer and a second insulating layer which are stacked; a density of the second insulating layer is greater than a density of the first insulating layer; and the second insulating layer is farther away from the base substrate than the first insulating layer.
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公开(公告)号:US20230236460A1
公开(公告)日:2023-07-27
申请号:US18129749
申请日:2023-03-31
Inventor: Jinshuai DUAN , Xiaojuan WU , Hongliang YUAN , Wei ZHAO , Yao BI , Jiaxing WANG , Hao YAN , Li TIAN , Liping LEI
IPC: G02F1/1339 , G02F1/1333 , G02F1/1343
CPC classification number: G02F1/13394 , G02F1/13398 , G02F1/133345 , G02F1/13439 , G02F1/134309 , G02F1/136286
Abstract: A liquid crystal display panel is provided. The liquid crystal display panel includes: a first substrate and a second substrate arranged opposite to each other, and a liquid crystal layer and a plurality of strip-shaped spacers disposed between the first substrate and the second substrate. In the liquid crystal display panel, there is an overlapping area between an orthographic projection of a first signal line on a target base and an orthographic projection of a second signal line on the target base, and an orthographic projection of the strip-shaped spacer on the target base is not overlapped with the overlapping area.
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23.
公开(公告)号:US20220276768A1
公开(公告)日:2022-09-01
申请号:US17452947
申请日:2021-10-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Liping LEI , Changcheng LIU , Wenchu DONG , Lirong XU , Honglei ZHANG
IPC: G06F3/0484 , G06F40/169
Abstract: The present disclosure provides a screenshot method for an information interaction interface, including: detecting a screenshot operation; acquiring information corresponding to the information interaction interface in response to the screenshot operation, wherein the information corresponding to the information interaction interface includes at least one piece of display information currently displayed in the information interaction interface; displaying an editing interface including at least one piece of editable information, wherein each piece of editable information corresponds to one piece of display information; and editing display content of the editing interface in response to an operation on the editing interface to generate a final display picture including at least the edited display content. In addition, the present disclosure also provides a screenshot apparatus for an information interaction interface, a computing device, and a computer-readable storage medium.
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公开(公告)号:US20220011909A1
公开(公告)日:2022-01-13
申请号:US17213372
申请日:2021-03-26
Applicant: BOE Technology Group Co., Ltd.
Inventor: Huiguang MA , Liping LEI , Yonggui YANG , Hao FANG
IPC: G06F3/0482 , G06F3/0488 , H04L29/08
Abstract: The present disclosure provides a device and method of intelligent interaction, and a storage medium. The device includes a touch-sensitive display, and a processor coupled to the touch-sensitive display and configured to: display an on-top floating window on the touch-sensitive display, wherein the on-top floating window is a first-level menu; display a second-level menu of the on-top floating window upon receiving a media file transfer message from a network side, wherein the second-level menu includes a cancel icon that is configured to stop downloading a media file or stop pushing a downloaded media file; and stop downloading the media file or stop pushing the downloaded media file in response to a user triggering the cancel icon through the touch-sensitive display.
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公开(公告)号:US20250164844A1
公开(公告)日:2025-05-22
申请号:US19032853
申请日:2025-01-21
Applicant: BOE Technology Group Co., Ltd.
Inventor: Yunping DI , Lizhong WANG , Ce NING , Binbin TONG , Liping LEI , Jianbo XIAN
IPC: G02F1/1368 , G02F1/1362 , H10D86/01 , H10D86/40 , H10D86/60
Abstract: Provided is a substrate. The substrate includes a base substrate; and a plurality of sub-pixel structures arranged in an array on the base substrate, wherein the sub-pixel structure comprises: a thin film transistor disposed on the base substrate, the thin film transistor comprising a source and a drain; an insulating layer disposed on a side of the thin film transistor distal from the base substrate, a first via hole being formed in the insulating layer; a pixel electrode disposed on a side of the insulating layer distal from the base substrate, the pixel electrode being electrically connected to either the source or the drain through the first via hole; and a filling block disposed at the first via hole.
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公开(公告)号:US20250089303A1
公开(公告)日:2025-03-13
申请号:US18292558
申请日:2022-06-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Lizhong WANG , Guangcai YUAN , Ce NING , Hehe HU , Nianqi YAO , Dongfang WANG , Zhengliang LI , Liping LEI , Chen XU
IPC: H01L29/786 , G09G3/20 , G11C19/28 , H01L29/08
Abstract: A thin film transistor, a shift register unit, a gate driving circuit and a display panel are provided. The M source branches and the N drain branches extend along a first direction and are arranged at intervals; in each of the P source-drain units, the M source branches and the N drain branches are alternately arranged, and M is greater than or equal to N; a semiconductor layer includes sub-channel regions between one drain branch and one source branch adjacent to each other; a sum of widths of the sub-channel regions of the P source-drain units in the first direction is W, and an average length of the sub-channel regions of the P source-drain units in a direction perpendicular to the first direction is L; 12≤W/L≤400, P, M and N are integers greater than or equal to 1, and P×N≥4.
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公开(公告)号:US20240386864A1
公开(公告)日:2024-11-21
申请号:US18788302
申请日:2024-07-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Lizhong WANG , Guangcai YUAN , Ce NING , Hehe HU , Nianqi YAO , Xin XIE , Yifang HUANG , Liping LEI , Chen XU
IPC: G09G3/36
Abstract: A display substrate and a display panel are provided, the display substrate includes a first gate driver circuit and a second gate driver circuit that are respectively arranged on a first side and a second side of a display region opposite to each other; the first gate driver circuit includes a plurality of first shift register units arranged in a first direction, each first shift register unit includes a first thin film transistor including a first active layer, the first active layer includes a metal oxide semiconductor material; the second gate driver circuit includes a plurality of second shift register units arranged in the first direction, each second shift register unit includes a second thin film transistor having the same function as the first thin film transistor, and the second thin film transistor includes a second active layer, the second active layer includes a metal oxide semiconductor material.
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公开(公告)号:US20240332425A1
公开(公告)日:2024-10-03
申请号:US18028009
申请日:2022-03-30
Applicant: BOE Technology Group Co., Ltd.
Inventor: Jiayu HE , Fangqing WEN , Ce NING , Hehe HU , Nianqi YAO , Kun ZHAO , Zhengliang LI , Jie HUANG , Feifei LI , Yan QU , Liping LEI
IPC: H01L29/786 , H01L25/07
CPC classification number: H01L29/7869 , H01L25/074
Abstract: The present disclosure provides a metal oxide thin film transistor, a semiconductor device and a display device, belongs to the field of display technology, and can solve a problem that current metal oxide thin film transistors have a poor stability. The metal oxide thin film transistor of the present disclosure includes a substrate and a first metal oxide semiconductor layer on the substrate; a material of the first metal oxide semiconductor layer includes a metal oxide doped with a first metal element, an electronegativity difference value between the first metal element and an oxygen element is greater than or equal to an electronegativity difference value between a metal element in the metal oxide and the oxygen element.
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公开(公告)号:US20240304698A1
公开(公告)日:2024-09-12
申请号:US18028114
申请日:2022-03-30
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jiayu HE , Yan QU , Liping LEI , Ce NING , Zhengliang LI , Hehe HU , Jie HUANG , Nianqi YAO , Kun ZHAO , Feifei LI
IPC: H01L29/49 , G02F1/1368 , H01L27/12 , H01L29/786
CPC classification number: H01L29/4908 , G02F1/1368 , H01L27/1225 , H01L29/7869 , H01L29/78696
Abstract: There is provided a metal oxide thin film transistor, including: a substrate and a metal oxide semiconductor layer on the substrate; a gate and a gate insulating layer between the substrate and the metal oxide semiconductor layer; the gate insulating layer includes a first silicon nitride layer, a second silicon nitride layer and a first silicon oxide layer which are stacked; the first silicon oxide layer is in contact with the metal oxide semiconductor layer, and two surfaces of the second silicon nitride layer are in contact with the first silicon nitride layer and the first silicon oxide layer, respectively; a content of hydrogen atoms of at least a partial region of the second silicon nitride layer is less than 30% of a content of hydrogen atoms of at least a partial region of the first silicon nitride layer. An array substrate and a display device are further provided.
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30.
公开(公告)号:US20240297255A1
公开(公告)日:2024-09-05
申请号:US17919301
申请日:2021-11-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Jie HUANG , Ce NING , Zhengliang LI , Hehe HU , Jiayu HE , Nianqi YAO , Kun ZHAO , Feifei LI , Liping LEI
IPC: H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L29/7869 , H01L27/1225 , H01L29/66969
Abstract: The present disclosure provides a thin film transistor, a method for manufacturing the thin film transistor, an array substrate and a display panel. The thin film transistor includes: a substrate; and a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on the substrate, wherein the active layer includes a first semiconductor layer and a second semiconductor layer sequentially arranged in a direction perpendicular to the substrate, the second semiconductor layer is arranged on a side of the first semiconductor layer away from the gate electrode; an absolute value of a difference between conduction band minimums of a first oxide material and a second oxide material is greater than 0.2 eV.
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