公开(公告)号：US12230683B2

公开(公告)日：2025-02-18

申请号：US17755380

申请日：2021-05-19

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Hehe Hu ,  Tianmin Zhou ,  Jipeng Song

IPC: H01L29/786 ,  H01L29/417

Abstract: The present disclosure provides a thin film transistor, a GOA circuit and an array substrate, the thin film transistor including a source electrode, including a source electrode wiring and a plurality of source electrode branches; a drain electrode, including a drain electrode wiring and a plurality of drain electrode branches; a gate; a semiconductor layer including a plurality of semiconductor branches; a plurality of source electrode branches. The plurality of drain electrode branches are in contact with the plurality of semiconductor branches and are divided into a plurality of cells; the source electrode wiring and the drain electrode wiring are arranged in a parallel and spaced apart, and the number m of one of the source electrode wiring and the drain electrode wiring is an integer greater than or equal to 2, and the number n of the other is an integer greater than or equal to 1.

公开(公告)号：US12183409B2

公开(公告)日：2024-12-31

申请号：US17909129

申请日：2021-10-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fengjuan Liu ,  Ce Ning ,  Wei Liu ,  Dini Xie ,  Yuhang Lu

IPC: G11C19/28 ,  G09G3/20

Abstract: Provided is a shift register unit. The shift register unit includes an input circuit, a compensation control circuit, and an output circuit; wherein input circuit coupled to an input signal terminal, an input control terminal, a first power supply terminal, a reference node, and a first node; the compensation control circuit coupled to a first clock signal terminal, the reference node, and the first node; and the output circuit coupled to the first node, a second clock signal terminal, and an output terminal.

公开(公告)号：US12068355B2

公开(公告)日：2024-08-20

申请号：US17410677

申请日：2021-08-24

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jie Huang ,  Nianqi Yao ,  Kun Zhao

IPC: H01L27/146 ,  H01L27/12

CPC classification number: H01L27/14643 ,  H01L27/1214 ,  H01L27/14689

Abstract: An array substrate includes a substrate, the array substrate includes a display region and a detection region. And the detection region includes a thin film transistor located on the substrate and a photodiode located on one side of the thin film transistor away from the substrate, and the array substrate further includes a first inorganic protective layer, an organic protective layer and a second inorganic protective layer located between the thin film transistor and the photodiode. And the first inorganic protective layer, the organic protective layer and the second inorganic protective layer are stacked in sequence in a direction away from the substrate, and an orthographic projection of the photodiode on the substrate is within the range of the orthographic projection of the organic protective layer on the substrate.

公开(公告)号：US20240272497A1

公开(公告)日：2024-08-15

申请号：US18005421

申请日：2022-03-30

Applicant: BOE Technology Group Co., Ltd.

Inventor： Binbin Tong ,  Lizhong Wang ,  Jianbo Xian ,  Liping Lei ,  Chunping Long ,  Yunping Di ,  Ce Ning

IPC: G02F1/1362 ,  G02F1/1333 ,  G02F1/1343

CPC classification number: G02F1/136286 ,  G02F1/133308 ,  G02F1/13439

Abstract: At least one embodiment of the present disclosure provides a display panel, and the display panel includes: a first substrate and a second substrate oppositely combined with each other, the first substrate includes a base substrate, and a gate line, a first electrode, a first interlayer insulating layer, and second electrode on the base substrate; the first interlayer insulating layer includes a first via hole penetrating through the first interlayer insulating layer, the second electrode is electrically connected to the first electrode the first via hole, first support structure is provided in a region corresponding to the first via hole and on a side of the second electrode away from the base substrate; at least a part of the first support structure is located in the first via hole, an orthographic projection of the first via hole overlaps with an orthographic projection of the gate line on the base substrate.

公开(公告)号：US20240212564A1

公开(公告)日：2024-06-27

申请号：US17913258

申请日：2021-11-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Lizhong Wang ,  Ce Ning ,  Yunping Di ,  Binbin Tong ,  Chengfu Xu ,  Dapeng Xue ,  Shuilang Dong ,  Nianqi Yao

IPC: G09G3/20

CPC classification number: G09G3/2092 ,  G09G2300/0426 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/062 ,  G09G2310/08

Abstract: A display substrate, a manufacturing method thereof and a display apparatus are provided. In the present disclosure, a first transistor group with oxide semiconductor as an active layer material is disposed on a side of a second transistor group with polysilicon as an active layer material away from the base, and an area enclosed by orthographic projections of the transistors in the first transistor group on the base is overlapped with an area enclosed by orthographic projections of the transistors in the second transistor group on the base. Stable performance of the transistors included can be ensured in a manufacturing process of the first transistor group and the second transistor group located in different layers, and at the same time, an area occupied by the driving circuit can be reduced so as to decrease a frame width of a display apparatus or improve resolution of the display apparatus.

公开(公告)号：US20230329037A1

公开(公告)日：2023-10-12

申请号：US18022924

申请日：2022-03-04

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meng Zhao ,  Feng Guan ,  Wei Liu ,  Fengjuan Liu ,  Lubin Shi ,  Ce Ning

IPC: H10K59/121 ,  H10K59/131 ,  H10K59/12

CPC classification number: H10K59/1213 ,  H10K59/131 ,  H10K59/1201 ,  H10K59/1216

Abstract: A display base plate, a preparation method therefor and a display panel are provided in the present disclosure. The display panel can greatly improve resolution while ensuring low power consumption. The display base plate includes a plurality of sub-pixels. Each of the plurality of sub-pixels includes a storage capacitor, a polysilicon transistor and at least one oxide transistor. The storage capacitor includes a first electrode and a second electrode oppositely arranged, and first electrode is arranged at a side of the second electrode away from the substrate. The second electrode is arranged in the same layer as a gate electrode of the polysilicon transistor. The at least one oxide transistor is arranged on a side of the first electrode away from the substrate, and the first electrode at least partially overlaps with an active layer of the at least one oxide transistor in a direction perpendicular to the substrate.

公开(公告)号：US11648558B2

公开(公告)日：2023-05-16

申请号：US16605776

申请日：2019-05-06

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Hehe Hu

IPC: B01L3/00 ,  G01N27/12 ,  G01N33/487

CPC classification number: B01L3/502761 ,  B01L3/502707 ,  G01N27/128 ,  B01L2200/0647 ,  B01L2200/12 ,  B01L2300/0645 ,  B01L2300/0864 ,  B01L2300/0887 ,  B01L2300/12 ,  B01L2400/0421 ,  G01N33/48721

Abstract: A biosensor apparatus is provided. The biosensor apparatus includes a base substrate; a first fluid channel layer on the base substrate and having a first fluid channel passing therethrough; a foundation layer on a side of the first fluid channel layer away from the base substrate, a foundation layer throughhole extending through the foundation layer to connect to the first fluid channel; and a micropore layer on a side of the foundation layer away from the base substrate, a micropore extending through the micropore layer to connect to the first fluid channel through the foundation layer throughhole. The micropore layer extends into the foundation layer throughhole and at least partially covers an inner wall of the foundation layer throughhole.

公开(公告)号：US20230091604A1

公开(公告)日：2023-03-23

申请号：US17611156

申请日：2021-01-28

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jie Huang ,  Jiayu He ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Fengjuan Liu ,  Nianqi Yao ,  Kun Zhao ,  Tianmin Zhou ,  Jiushi Wang ,  Zhongpeng Tian

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include tin, and at least one of indium, gallium and zinc. The first protection layer includes praseodymium used to absorb photo-generated electrons from at least one of the channel layer and the first protection layer which is under light irradiation and reduce a photo-generated current caused by the light irradiation.

公开(公告)号：US20230015871A1

公开(公告)日：2023-01-19

申请号：US17780877

申请日：2021-05-27

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie Huang ,  Ce Ning ,  Zhengliang Li ,  Hehe Hu ,  Jiayu He ,  Nianqi Yao ,  Feng Qu ,  Xiaochun Xu

IPC: H01L29/786 ,  H01L27/12

Abstract: A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device arc provided. The thin film transistor includes an active layer including multiple oxide layers which includes a channel layer, a transition layer and a first barrier layer, the channel layer is an layer with a highest carrier mobility, the channel layer is a crystalline or amorphous oxide layer, the transition layer is in direct contact with the channel layer, the first barrier layer is an outermost oxide layer, the first barrier layer and the transition layer are both crystalline oxide layers; a crystallization degree of the first barrier layer and a crystallization degree of the transition layer are greater than a crystallization degree of the channel layer, and a band gap of the first barrier layer and a band gap of the transition layer are larger than a band gap of the channel layer.

公开(公告)号：US11219894B2

公开(公告)日：2022-01-11

申请号：US16647386

申请日：2019-09-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaochen Ma ,  Guangcai Yuan ,  Ce Ning ,  Xin Gu ,  Hehe Hu

IPC: B01L3/00 ,  B01L9/00 ,  G01N21/05 ,  G01N21/63

Abstract: A microfluidic channel structure and a fabrication method thereof, a microfluidic detecting device and a detecting method thereof are disclosed. The microfluidic channel structure includes a support portion; a foundation portion, provided on the support portion and including a first foundation and a second foundation spaced apart from each other; and a channel defining portion, provided on a side of the foundation portion that is away from the support portion and including a first channel layer and a second channel layer, the first channel layer covering the first foundation and the second channel layer covering the second foundation have a gap therebetween to define a microfluidic channel; and the first channel layer and the second channel layer are made of a same material.