公开(公告)号：US06379977B1

公开(公告)日：2002-04-30

申请号：US09405809

申请日：1999-09-24

申请人： Ho Jung Sun ,  Soon Yong Kweon ,  Seung Jin Yeom

发明人： Ho Jung Sun ,  Soon Yong Kweon ,  Seung Jin Yeom

IPC分类号： H01L2120

CPC分类号： H01L28/40 ,  H01L21/76895

摘要： A method of manufacturing a ferroelectric memory device which can improve the adhesion between an intermediate insulating layer and a lower electrode and the surface roughness of the lower electrode, is disclosed. According to the present invention, a titanium layer and a first platinum layer are sequentially formed on a semiconductor substrate on which a first intermediate insulating layer is formed. The substrate is then thermal-treated under oxygen atmosphere to transform the titanium layer and the first platinum layer into a titanium oxide layer containing platinum. Next, a second platinum layer for a lower electrode, a ferroelectric thin film and a third platinum layer for an upper electrode are formed on the titanium oxide layer containing platinum, in sequence. The third platinum layer is then etched to form the upper electrode and the ferroelectric thin film, the second platinum layer and the titanium oxide layer containing platinum are etched to form a capacitor.

摘要翻译： 公开了一种制造可提高中间绝缘层和下电极之间的粘附性的铁电存储装置的方法以及下电极的表面粗糙度。根据本发明，依次层叠钛层和第一铂层 形成在其上形成有第一中间绝缘层的半导体衬底上。 然后在氧气氛下对衬底进行热处理，以将钛层和第一铂层转变成含有铂的氧化钛层。 接下来，依次在含有铂的氧化钛层上形成用于下电极的第二铂层，铁电薄膜和用于上电极的第三铂层。 然后蚀刻第三铂层以形成上电极，并且蚀刻含有铂的铁电薄膜，第二铂层和氧化钛层以形成电容器。

公开(公告)号：US6063639A

公开(公告)日：2000-05-16

申请号：US429128

申请日：1999-10-28

申请人： Nam Kyeong Kim ,  Seung Jin Yeom

发明人： Nam Kyeong Kim ,  Seung Jin Yeom

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/00

CPC分类号： H01L28/55 ,  H01L21/02197 ,  H01L21/0223 ,  H01L21/02252 ,  H01L21/31691

摘要： A method for fabricating a ferroelectric capacitor of nonvolatile semiconductor memory device includes the steps of forming an amorphous layer on a resulting structure after performing a specific process, forming perovskite nuclei within the amorphous layer by an oxidation reaction in plasma atmosphere and performing a thermal process for growing the grains to form a ferroelectric thin film. The perovskite nuclei are formed at a low temperature, so that the ferroelectric capacitor has improved properties such as high density, high polarization and low leakage current.

摘要翻译： 一种制造非易失性半导体存储器件的铁电电容器的方法包括以下步骤：在进行特定工艺后在所得结构上形成非晶层，通过等离子体气氛中的氧化反应在非晶层内形成钙钛矿晶核，并进行热处理 生长晶粒形成铁电薄膜。 在低温下形成钙钛矿核，使铁电电容器具有改善的性能，如高密度，高极化和低漏电流。

公开(公告)号：US08092862B2

公开(公告)日：2012-01-10

申请号：US12895678

申请日：2010-09-30

申请人： Deok Sin Kil ,  Kwon Hong ,  Seung Jin Yeom

发明人： Deok Sin Kil ,  Kwon Hong ,  Seung Jin Yeom

IPC分类号： C23C16/00

CPC分类号： C23C16/40 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02178 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31616 ,  H01L21/31641 ,  H01L27/10814 ,  H01L28/40

摘要： Provided is a method for forming a dielectric film in a semiconductor device, wherein the method can improve a dielectric characteristic and a leakage current characteristic. According to specific embodiments of the present invention, the method for forming a dielectric film includes: forming a zirconium dioxide (ZrO2) layer over a wafer in a predetermined thickness that does not allow continuous formation of the ZrO2 layer; and forming an aluminum oxide (Al2O3) layer over portions of the wafer where the ZrO2 layer is not formed, in a predetermined thickness that does not allow continuous formation of the Al2O3 layer.

摘要翻译： 提供一种在半导体器件中形成电介质膜的方法，其中该方法可以改善介电特性和漏电流特性。 根据本发明的具体实施方案，形成电介质膜的方法包括：在不允许连续形成ZrO 2层的预定厚度的晶片上形成二氧化锆（ZrO 2）层; 并且在没有形成ZrO 2层的晶片的部分上形成氧化铝（Al 2 O 3）层，其厚度不能连续地形成Al 2 O 3层。

公开(公告)号：US07981781B2

公开(公告)日：2011-07-19

申请号：US12471801

申请日：2009-05-26

申请人： Joon Seok Oh ,  Seung Jin Yeom ,  Jae Hong Kim

发明人： Joon Seok Oh ,  Seung Jin Yeom ,  Jae Hong Kim

IPC分类号： H01L21/44 ,  H01L21/425 ,  H01L21/4763

CPC分类号： H01L21/76846 ,  H01L21/76856 ,  H01L21/76873 ,  Y10T428/26 ,  Y10T428/31678

摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer has a metal line forming region. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer. The diffusion barrier includes a stack structure including an MoxSiyNz layer and an Mo layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.

摘要翻译： 半导体器件的金属线包括形成在半导体衬底上的绝缘层。 绝缘层具有金属线形成区域。 在绝缘层的金属线形成区域的表面上形成扩散阻挡层。 扩散阻挡层包括具有MoxSiyNz层和Mo层的堆叠结构。 在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

公开(公告)号：US06162649A

公开(公告)日：2000-12-19

申请号：US456364

申请日：1999-12-08

申请人： Soon Yong Kweon ,  Seung Jin Yeom

发明人： Soon Yong Kweon ,  Seung Jin Yeom

IPC分类号： H01L21/768 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L21/00

CPC分类号： H01L28/75 ,  H01L21/2855 ,  H01L21/76895 ,  H01L28/55

摘要： A method of manufacturing a ferroelectric memory device capable of effectively preventing Ti from diffusing into a ferroelectric layer during thermal-treating of TiN/Ti which will be performed after, is disclosed. According to the present invention, a Pt layer for an upper elctrode of a capacitor is formed to a multi-layer by multi-step at high temperature, high pressure and low power, to densify its grain boundary. Furthermore, by adding O.sub.2 to sputtering gas when forming the Pt layer, thereby preventing Ti from diffusing into a ferroelectric layer through the Pt layer of the upper electrode. As a result, the electrical properties of a ferroelectric memory device are improved.

摘要翻译： 公开了一种制造在以后进行的TiN / Ti的热处理中能够有效地防止Ti向强电介质层扩散的铁电存储器件的方法。 根据本发明，通过在高温，高压和低功率下的多步骤，形成电容器上电极的Pt层为多层，以使其晶界致密化。 此外，通过在形成Pt层时向溅射气体中添加O2，由此防止Ti通过上部电极的Pt层扩散到铁电体层。 结果，提高了铁电存储器件的电性能。

公开(公告)号：US6066540A

公开(公告)日：2000-05-23

申请号：US143096

申请日：1998-08-28

申请人： Seung Jin Yeom ,  Young Jin Park

发明人： Seung Jin Yeom ,  Young Jin Park

IPC分类号： H01L27/06 ,  H01L21/02 ,  H01L21/20

CPC分类号： H01L28/55

摘要： A method for manufacturing a capacitor of semiconductor device is provided, which method has the steps of providing a semiconductor substrate; forming a intermediate insulating film having a contact plug on the semiconductor substrate; forming a tungsten nitride film as an diffusion barrier film on the intermediate insulating film including the contact plug; and forming a stack structure of a lower electrode, a dielectric layer and an upper electrode on the tungsten nitride film. So, the destruction of diffusion protection film due to the tension stress can be protected and the reaction of silicide between the electrode material and the contact plug which is a polysilicon can be controlled since the tungsten nitride film has an excellent diffusion protection property so that the property deterioration of the device can be protected, the characteristic and reliability of semiconductor device can be improved and then large scale integration of semiconductor device can be embodied.

摘要翻译： 提供一种制造半导体器件的电容器的方法，该方法具有提供半导体衬底的步骤; 在半导体衬底上形成具有接触塞的中间绝缘膜; 在包括接触插塞的中间绝缘膜上形成作为扩散阻挡膜的氮化钨膜; 并在氮化钨膜上形成下电极，电介质层和上电极的堆叠结构。 因此，可以保护由于张力应力引起的扩散保护膜的破坏，并且可以控制电极材料和作为多晶硅的接触插塞之间的硅化物的反应，因为氮化钨膜具有优异的扩散保护性能， 可以保护器件的性能劣化，可以提高半导体器件的特性和可靠性，从而实现半导体器件的大规模集成。