公开(公告)号：US20070190778A1

公开(公告)日：2007-08-16

申请号：US11352815

申请日：2006-02-13

Applicant: Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

Inventor： Jen-Chieh Shih ,  Bang-Ching Ho ,  Jian-Hong Chen

IPC: H01L21/4763

CPC classification number: H01L21/76808

Abstract: A method for forming a dual damascene structure in a semiconductor device manufacturing process where via plugs which may include a thickness portion of a plug filling material overlying the process surface is formed by diffusing an acid into a plug filling material layer followed by reacting the acid with the plug filling material layer to form a soluble portion which is then removed using a solvent. A remaining portion of the plug filling material is cured and a BARC layer may be formed over the process surface prior to patterning trenches in an overlying resist layer and forming a dual damascene structure.

Abstract translation: 一种用于在半导体器件制造工艺中形成双镶嵌结构的方法，其中可以包括覆盖在工艺表面上的塞子填充材料的厚度部分的通孔塞通过将酸扩散到塞填充材料层中，然后使酸与 塞子填充材料层以形成可溶部分，然后使用溶剂除去。 塞子填充材料的剩余部分被固化，并且可以在上覆的抗蚀剂层中的沟槽图案形成双重镶嵌结构之前，在工艺表面上形成BARC层。

公开(公告)号：US07033735B2

公开(公告)日：2006-04-25

申请号：US10714998

申请日：2003-11-17

Applicant: Bang-Chien Ho ,  Jian-Hong Chen

Inventor： Bang-Chien Ho ,  Jian-Hong Chen

IPC: G03C1/735

CPC classification number: G03F7/40 ,  G03F7/0035 ,  G03F7/038

Abstract: A method is described for reducing the space width of holes in a first resist pattern and simultaneously removing unwanted holes to change the pattern density in the resulting second pattern. This technique provides holes with a uniform space width as small as 100 nm or less that is independent of pattern density in the second pattern. A positive resist is patterned to form holes with a first pattern density and first space width. A water soluble negative resist is coated over the first resist and selectively exposed to form a second patterned layer consisting of water insoluble plugs in unwanted holes in the first pattern and a thin water insoluble layer on the first resist pattern in unexposed portions. The plugs may form dense and isolated hole arrays while the thin insoluble layer reduces space width to the same extent in remaining holes in the second pattern.

公开(公告)号：US20050014362A1

公开(公告)日：2005-01-20

申请号：US10915633

申请日：2004-08-10

Applicant: Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

Inventor： Bang-Chien Ho ,  Jian-Hong Chen ,  Tsang-Jiuh Wu ,  Li-Te Lin ,  Li-Chih Chao ,  Hua-Tai Lin ,  Shyue-Sheng Lu

IPC: H01L21/768 ,  H01L21/4763

CPC classification number: H01L21/76808

Abstract: A method of fabricating semiconductor devices using dual damascene processes to form plugs in the via holes composed of various high etch materials and bottom anti-reflection coating (BARC) materials. After via hole etch, a layer of high etch rate plug material is spin coated to fill the via holes. Next, a layer of photoresist is applied. The photoresist is then exposed through a mask and developed to form an etch opening. Using the remaining photoresist as an etch mask and with a bottom anti-reflection coating (BARC) as protection, the oxide or low k layer is etched to form subsequent wiring. The etch step is known as a damascene etch step. The remaining photoresist is removed and the trench/via openings are filled with metal forming inlaid metal interconnect wiring and contact vias.

Abstract translation: 使用双镶嵌工艺制造半导体器件的方法来在由各种高蚀刻材料和底部抗反射涂层（BARC）材料构成的通孔中形成插塞。 在通孔蚀刻之后，旋涂一层高蚀刻速率的塞材料以填充通孔。 接下来，施加一层光致抗蚀剂。 然后将光致抗蚀剂通过掩模曝光并显影以形成蚀刻开口。 使用剩余的光致抗蚀剂作为蚀刻掩模和底部防反射涂层（BARC）作为保护，氧化物或低k层被蚀刻以形成后续布线。 蚀刻步骤被称为镶嵌蚀刻步骤。 去除剩余的光致抗蚀剂，并且通过金属形成金属互连布线和接触通孔填充沟槽/通孔开口。

公开(公告)号：US08296634B2

公开(公告)日：2012-10-23

申请号：US12714467

申请日：2010-02-27

Applicant: Yao-Tsu Chang ,  Ming-Haw Jing ,  Chong-Dao Lee ,  Jian-Hong Chen ,  Zih-Heng Chen

Inventor： Yao-Tsu Chang ,  Ming-Haw Jing ,  Chong-Dao Lee ,  Jian-Hong Chen ,  Zih-Heng Chen

IPC: H03M13/00 ,  H03M13/03

CPC classification number: H03M13/1575

Abstract: An error correction decoder includes a syndrome generator and an error correction value generator. The syndrome generator is operable to generate a plurality of syndromes based upon a received signal generated according to a generator polynomial. The error correction value generator is operable to generate a plurality of product values. Each of the product values is generated for one of the syndromes based upon a respective power of the roots of the generator polynomial. The respective power is determined based upon a respective index corresponding to one of the syndromes to be considered and unit positions of the received signal. The error correction value generator is further operable to generate an error correction value according to the product values, and to provide an error correcting device coupled thereto with the error correction value for correcting an error of the received signal.

Abstract translation: 纠错解码器包括校正子发生器和纠错值发生器。 校正子发生器可操作以基于根据生成多项式生成的接收信号来生成多个校正子。 误差校正值发生器可操作以产生多个乘积值。 基于生成多项式的根的相应功率，针对其中一个综合征生成每个产品值。 相应的功率是根据与要考虑的综合症之一相对应的相应索引和接收信号的单元位置来确定的。 误差校正值发生器还可用于根据乘积值产生误差校正值，并提供与其一起耦合的纠错装置和用于校正接收信号误差的纠错值。

公开(公告)号：US08158335B2

公开(公告)日：2012-04-17

申请号：US12210737

申请日：2008-09-15

Applicant: Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

Inventor： Hsiao-Wei Yeh ,  Ching-Yu Chang ,  Jian-Hong Chen ,  Chih-An Lin

IPC: G03F7/26

CPC classification number: H01L21/0273 ,  G03F7/0035 ,  G03F7/405 ,  H01L21/3086

Abstract: The present invention includes a lithography method comprising forming a first patterned insist layer including at least one opening therein over a substrate. A water-soluble polymer layer is formed over the first patterned resist layer and the substrate, whereby a reaction occurs at the interface of the first patterned resist layer and the water-soluble polymer layer. The non-reacted water-soluble polymer layer is removed. Thereafter, a second patterned resist layer is formed over the substrate, wherein at least one portion of the second patterned resist layer is disposed within the at least one opening of the first patterned resist layer or abuts at least one portion of the first patterned resist layer. The substrate is thereafter etched using the first and second patterned resist layers as a mask.

Abstract translation: 本发明包括光刻方法，包括在衬底上形成包括至少一个开口的第一图案化坚固层。 在第一图案化抗蚀剂层和基底上形成水溶性聚合物层，由此在第一图案化抗蚀剂层和水溶性聚合物层的界面处发生反应。 去除未反应的水溶性聚合物层。 此后，在衬底上形成第二图案化抗蚀剂层，其中第二图案化抗蚀剂层的至少一部分设置在第一图案化抗蚀剂层的至少一个开口内，或者邻接第一图案化抗蚀剂层的至少一部分 。 然后使用第一和第二图案化抗蚀剂层作为掩模蚀刻衬底。

公开(公告)号：US20120034778A1

公开(公告)日：2012-02-09

申请号：US13274840

申请日：2011-10-17

Applicant: Feng-Cheng Hsu ,  Jian-Hong Chen

Inventor： Feng-Cheng Hsu ,  Jian-Hong Chen

IPC: H01L21/302 ,  G03F7/20

CPC classification number: H01L21/0271 ,  H01L21/31144

Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.

Abstract translation: 光刻图案的方法包括在基板上形成第一抗蚀剂图案，第一抗蚀剂图案在基板上包括多个开口; 在所述基板上和所述第一抗蚀剂图案的所述多个开口内形成第二抗蚀剂图案，所述第二抗蚀剂图案在所述基板上包括至少一个开口; 以及去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的基板。

公开(公告)号：US20090233238A1

公开(公告)日：2009-09-17

申请号：US12047086

申请日：2008-03-12

Applicant: Feng-Cheng Hsu ,  Jian-Hong Chen

Inventor： Feng-Cheng Hsu ,  Jian-Hong Chen

IPC: G03F7/00

CPC classification number: H01L21/0271 ,  H01L21/31144

Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, the first resist pattern including a plurality of openings therein on the substrate; forming a second resist pattern on the substrate and within the plurality of openings of the first resist pattern, the second resist pattern including at least one opening therein on the substrate; and removing the first resist pattern to uncover the substrate underlying the first resist pattern.

Abstract translation: 光刻图案的方法包括在基板上形成第一抗蚀剂图案，第一抗蚀剂图案在基板上包括多个开口; 在所述基板上和所述第一抗蚀剂图案的所述多个开口内形成第二抗蚀剂图案，所述第二抗蚀剂图案在所述基板上包括至少一个开口; 以及去除第一抗蚀剂图案以露出第一抗蚀剂图案下方的基板。

公开(公告)号：US20090184081A1

公开(公告)日：2009-07-23

申请号：US12010229

申请日：2008-01-23

Applicant: Ming-Jung Wu ,  Jian-Hong Chen

Inventor： Ming-Jung Wu ,  Jian-Hong Chen

IPC: A61J9/02 ,  A61J9/00

CPC classification number: A61J9/02

Abstract: A feeding bottle includes a body, a temperature sensing and measuring plate on a lateral wall portion of the body, and a plate-shaped warning device covered by the temperature sensing and measuring plate; the temperature sensing and measuring plate can change colors with temperature to indicate the temperature for the users such as the parents, nursing persons, and diners; the warning device can give a certain kind of sound effect according to the temperature so that the parents/nursing persons can easily make sure that the food contents of the feeding bottle isn't too hot before they feed little children/persons with disabilities; little children, the elderly, and persons with visual disabilities also can be directly warned by the warning sound effects given by the warning device if the temperature is too high.

Abstract translation: 饲料瓶包括在身体的侧壁部分上的主体，温度感测和测量板以及由温度感测和测量板覆盖的板状警告装置; 温度检测和测量板可以随温度变化颜色，以指示家长，护理人员和食客等用户的温度; 警告装置可以根据温度给予某种声音效果，以便父母/哺乳者能够容易地确保在喂养小孩/残疾人之前，奶瓶的食物内容物不会过热; 如果温度过高，小孩，老人和视力障碍者也可以直接警告警告装置所发出的警告声音。

公开(公告)号：US20050051087A1

公开(公告)日：2005-03-10

申请号：US10658709

申请日：2003-09-08

Applicant: Kuo-Hsing Teng ,  Chia-Ray Tzou ,  Richard Peng ,  Jian-Hong Chen

Inventor： Kuo-Hsing Teng ,  Chia-Ray Tzou ,  Richard Peng ,  Jian-Hong Chen

IPC: C23C16/00 ,  H01L21/00

CPC classification number: H01L21/6708

Abstract: A primer tank having a nozzle assembly which uniformly distributes nitrogen or other vapor-generating gas against a primer liquid in the tank to generate a primer vapor for the priming of a semiconductor wafer substrate. The nozzle assembly includes a conduit to which is confluently attached a nozzle head having a nozzle plate. Multiple openings are provided in the nozzle plate to substantially uniformly distribute nitrogen or other inert gas against the surface of the primer liquid over a large area to generate a primer mist from the primer liquid and substantially reduce the formation of primer droplets in the tank.

Abstract translation: 一种底漆罐，其具有喷嘴组件，其将氮气或其他产生气体的气体均匀地分配在罐中的底漆液体上，以产生用于半导体晶片衬底的底漆的底漆蒸气。 喷嘴组件包括导管，其汇合地附接有具有喷嘴板的喷嘴头。 在喷嘴板中设置多个开口，以在大面积上大致均匀地将氮气或其它惰性气体均匀地分布在底漆液体的表面上，以从底漆液体产生底漆，并大大减少油箱中底漆液滴的形成。

公开(公告)号：US06573024B2

公开(公告)日：2003-06-03

申请号：US09801742

申请日：2001-03-09

Applicant: Sheng-Yueh Chang ,  Jian-Hong Chen ,  Ting-Chun Liu ,  Tzu-Yu Lin ,  Wen-Yuang Tsai

Inventor： Sheng-Yueh Chang ,  Jian-Hong Chen ,  Ting-Chun Liu ,  Tzu-Yu Lin ,  Wen-Yuang Tsai

IPC: G03F7004

CPC classification number: G03F7/0045 ,  C07C51/412 ,  G03F7/0397 ,  C07C61/13 ,  C07C61/29 ,  C07C61/135

Abstract: The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E0 value of the resist can be decreased.