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公开(公告)号：US6149784A
公开(公告)日：2000-11-21
申请号：US425583
申请日：1999-10-22
IPC分类号： H01L21/205 , C23C14/34 , C23C14/35 , C23C14/56 , H01J37/34 , H01L21/28 , H01L21/285
CPC分类号： H01J37/3441 , C23C14/3407 , C23C14/35 , C23C14/564 , H01J37/3402
摘要： A shield for a DC magnetron sputtering reactor, particularly advantageous for reliably igniting the plasma used in sputtering a ferromagnetic material such as cobalt or nickel. The grounded shield includes a slanted portion separated from the beveled periphery of the target by a small gap operating as a dark space. The shield also includes a straight cylindrical portion surrounding the main processing area. The slanted portion is joined to the cylindrical portion at a knee According to one embodiment of the invention, the knee is located greater than 9 mm from the face of the target and at a radial position at least 1 mm inward of the outer periphery of the target face.
摘要翻译： 用于DC磁控溅射反应器的屏蔽，特别有利于可靠地点燃用于溅射铁磁材料如钴或镍的等离子体。 接地的屏蔽件包括一个与目标的斜面周边分开的倾斜部分，作为暗空间工作的小间隙。 屏蔽还包括围绕主处理区域的直圆柱形部分。 倾斜部分在膝盖处连接到圆柱形部分根据本发明的一个实施例，膝盖位于距目标的表面大于9mm处，并且位于距离靶的外周至少1mm内侧的径向位置处 目标面。
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公开(公告)号：US6045666A
公开(公告)日：2000-04-04
申请号：US977007
申请日：1997-11-24
IPC分类号： C23C14/00 , C23C14/04 , C23C14/06 , C23C14/14 , C23C14/32 , C23C14/34 , C23C14/35 , C23C14/56 , H01L21/285 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532
CPC分类号： C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/345 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01J2237/32 , H01L2924/0002
摘要： A hole filling process for an integrated circuit in which wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiN.sub.x, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
摘要翻译： 一种用于集成电路的孔填充过程，其中集成电路中的布线电平通过窄孔连接，特别是在下层是硅的情况下。 首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。 阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。 此后，在高密度等离子体的条件下沉积第一铝层。 然后通过标准PVD技术沉积填充铝层。
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公开(公告)号：US5759360A
公开(公告)日：1998-06-02
申请号：US402676
申请日：1995-03-13
申请人： Kenny King-Tai Ngan , Jaim Nulman
发明人： Kenny King-Tai Ngan , Jaim Nulman
IPC分类号： H01L21/302 , B08B7/00 , C23C14/02 , C23C16/02 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/3065 , C23C14/34
CPC分类号： H01L21/02046 , B08B7/0035 , C23C14/022 , C23C16/0245 , H01L21/67069
摘要： A method of precleaning a silicon wafer to remove a layer of native silicon oxide thereon comprising adding a mixture of argon and oxygen to a plasma etch chamber including a wafer to be cleaned mounted on a cathode in said chamber, while maintaining the pressure in the chamber below about 3 millitorr. The oxygen is added to react with silicon atoms in the plasma but not with silicon atoms of the single crystal silicon wafer. The presence of oxygen in the plasma at low pressure ensures steady plasma generation and uniform etching across the wafer.
摘要翻译： 一种预硅化硅晶片以除去其上的天然氧化硅层的方法，其中包括将氩和氧的混合物添加到等离子体蚀刻室中，所述等离子体蚀刻室包括安装在所述室中的阴极上的待清洁晶片，同时保持室内的压力 低于约3毫托。 添加氧以与等离子体中的硅原子反应，但不与单晶硅晶片的硅原子反应。 在低压下在等离子体中存在氧气确保稳定的等离子体产生和跨晶片的均匀蚀刻。
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公开(公告)号：US6071811A
公开(公告)日：2000-06-06
申请号：US806966
申请日：1997-02-26
申请人： Kenny King-Tai Ngan
发明人： Kenny King-Tai Ngan
IPC分类号： C23C14/00 , C23C14/06 , C23C14/34 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76814 , C23C14/0036 , C23C14/0641 , H01L21/76843
摘要： I have found that in order to improve sheet resistance uniformity of metal nitride films, such as titanium nitride, the chamber must be operated at low pressure. The nitrogen gas flow rates required to deposit metal nitride is determined, and the pumping speed in the chamber is increased to produce uniform films at low pressure.
摘要翻译： 我发现，为了提高诸如氮化钛的金属氮化物薄膜的薄层电阻均匀性，该腔室必须在低压下操作。 确定沉积金属氮化物所需的氮气流速，并且增加室中的泵送速度以在低压下产生均匀的膜。
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25.发明授权End effector for semiconductor wafer transfer device and method of moving a wafer with an end effector 失效用于半导体晶片转移装置的末端执行器和用末端执行器移动晶片的方法
公开(公告)号：US5746460A
公开(公告)日：1998-05-05
申请号：US569760
申请日：1995-12-08
申请人： Dan A. Marohl , Kenny King-Tai Ngan
发明人： Dan A. Marohl , Kenny King-Tai Ngan
IPC分类号： B65G49/07 , H01L21/687 , B65G65/00
CPC分类号： H01L21/68707 , Y10S414/141
摘要： An end effector for a transfer robot used in connection with the manufacture of semiconductor wafers is provided. The end effector is designed to handle very thin (0.005"-0.010") semiconductor wafers which tend to bow during processing. The robot blade or end effector includes a deep pocket for receiving a bowed wafer. The depth of the pocket may be varied depending upon the degree of bowing in the wafers to be handled. Unlike ordinary wafer transfer devices, the present invention requires the wafer to be transferred with the surface bearing the devices facing down. The deep pocket allows the end effector to contact only the edges of the wafer, thus minimizing any defects across the wafer due to handling. The pocket opening is provided with arcuately shaped sloped wafer contact surfaces to prevent wafer sliding during robot movement.
摘要翻译： 提供了一种用于与制造半导体晶片相关的传送机器人的端部执行器。 端部执行器被设计成处理在加工期间倾向于弯曲的非常薄（0.005“至0.010”）的半导体晶片。 机器人刀片或末端执行器包括用于接收弓形晶片的深口袋。 口袋的深度可以根据要处理的晶片的弯曲程度而变化。 不同于普通的晶片转移装置，本发明要求晶片被转移，其中表面将使装置面朝下。 深口袋允许端部执行器仅接触晶片的边缘，从而最小化由于处理而在晶片上的任何缺陷。 口袋开口设置有弧形倾斜的晶片接触表面，以防止机器人运动期间的晶片滑动。
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公开(公告)号：US5707498A
公开(公告)日：1998-01-13
申请号：US682845
申请日：1996-07-12
申请人： Kenny King-Tai Ngan
发明人： Kenny King-Tai Ngan
CPC分类号： H01J37/321 , C23C14/35 , C23C14/358 , C23C14/564 , H01J37/32559 , H01J37/34 , H01J2237/022
摘要： A method of deposited a film on a semiconductor workpiece in an inductively-coupled plasma sputtering chamber so as to avoid contamination of the film by material sputtered off the induction coil. This is accomplished by alternately performing two processes in the chamber: (1) a pasting process performed with no RF power applied to the induction coil, and (2) an inductively-coupled plasma sputter deposition process for depositing a desired film on a semiconductor workpiece. The pasting process deposits material from the target onto the surface of the induction coil, thereby forming a protective coating on the coil. To the extent the coating material is sputtered off the induction coil during the subsequent ionized sputtering process, it will be the same as the material being sputtered off the target, and therefore it will not contaminate the film being deposited on the semiconductor workpiece. After a certain number of semiconductor workpieces are processed with the ionized sputtering process, the protective coating on the induction coil will thin enough in spots to risk exposing the underlying material of the coil. At that point, the film deposition process is terminated, and the pasting process is repeated. After the pasting process deposits a coating on the coil, the film deposition process can resume.
摘要翻译： 一种在电感耦合等离子体溅射室中在半导体工件上沉积薄膜以避免被感应线圈溅出的材料污染膜的方法。 这通过在腔室中交替执行两个过程来实现：（1）在没有施加到感应线圈的RF功率的情况下进行的糊化处理，以及（2）用于在半导体工件上沉积所需膜的感应耦合等离子体溅射沉积工艺 。 粘贴工艺将材料从目标沉积到感应线圈的表面上，从而在线圈上形成保护涂层。 在随后的电离溅射过程中涂层材料溅射到感应线圈的程度上，与溅射在靶上的材料相同，因此不会污染沉积在半导体工件上的膜。 在通过电离溅射工艺处理一定数量的半导体工件之后，感应线圈上的保护涂层将会足够薄，从而有可能暴露线圈的下面的材料。 此时，膜沉积过程终止，并且重复粘贴过程。 糊化过程在线圈上沉积涂层后，可以恢复成膜过程。
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公开(公告)号：US07041200B2
公开(公告)日：2006-05-09
申请号：US10126333
申请日：2002-04-19
IPC分类号： C23C14/35
CPC分类号： H01J37/32495 , C23C14/34 , C23C14/564 , H01J37/3408
摘要： In a magnetron sputtering chamber, a substrate is placed in the chamber and a deposition shield is maintained about the substrate to shield internal surfaces in the chamber. The deposition shield has a textured surface that may be formed by a hot pressing process or by a coating process, and that allows the accumulated sputtered residues to stick thereto without flaking off. An electrical power is applied to a high density sputtering target facing the substrate to form a plasma in the chamber while a rotating magnetic field of at least about 300 Gauss is applied about the target to sputter the target. Advantageously, the sputtering process cycle can be repeated for at least about 8,000 substrates without cleaning the internal surfaces in the chamber, and even while still generating an average particle count on each processed substrate of less than 1 particle per 10 cm2 of substrate surface area.
摘要翻译： 在磁控溅射室中，将衬底放置在腔室中，并且围绕衬底保持沉积屏蔽以屏蔽腔室中的内表面。 沉积屏蔽具有可以通过热压工艺或涂覆工艺形成的纹理表面，并且允许积聚的溅射残余物粘附到其上而不会剥落。 将电力施加到面向基板的高密度溅射靶，以在腔室中形成等离子体，同时围绕靶施加至少约300高斯的旋转磁场以溅射靶。 有利地，对于至少约8,000个衬底可以重复溅射工艺循环，而不清洁腔室中的内表面，并且即使在仍然在每个处理的衬底上产生的平均粒子数小于每10cm 2小于1个颗粒时， / SUP>的衬底表面积。
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公开(公告)号：US06945857B1
公开(公告)日：2005-09-20
申请号：US10888941
申请日：2004-07-08
IPC分类号： B24B1/00 , B24B53/007 , B24B53/12
CPC分类号： B24B53/017 , B24B53/12
摘要： A recycled polishing pad conditioner comprises a base plate and a reversed abrasive disc that is flipped over from its original configuration. The reversed disc comprises an exposed abrasive face having an unused abrasive face comprising abrasive particles. A bond face of the disc is affixed to the base plate, the bond face comprising a used abrasive face that was previously used to condition polishing pads. Also described is a pad conditioner having an abrasive face comprising exposed portions of abrasive particles, with at least about 60% of the abrasive particles having a crystalline structure with substantially the same crystal symmetry.
摘要翻译： 回收的抛光垫调节器包括从其原始构造翻转的基板和反转的研磨盘。 反向盘包括暴露的研磨面，其具有包含研磨颗粒的未使用的研磨面。 盘的粘合面固定到基板上，粘合面包括先前用于调节抛光垫的用过的研磨面。 还描述了一种垫调节剂，其具有包括磨料颗粒的暴露部分的研磨面，至少约60％的磨料颗粒具有基本相同的晶体对称性的晶体结构。
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29.发明授权Integrated PVD system for aluminum hole filling using ionized metal adhesion layer 失效使用电离金属粘合层的铝孔填充的集成PVD系统公开(公告)号：US06238533B1
公开(公告)日：2001-05-29
申请号：US08951990
申请日：1997-10-16
IPC分类号： C23C1434
CPC分类号： C23C14/0036 , C23C14/046 , C23C14/0641 , C23C14/14 , C23C14/32 , C23C14/345 , C23C14/35 , C23C14/358 , C23C14/568 , H01J37/321 , H01J37/34 , H01J2237/32 , H01L21/28518 , H01L21/76843 , H01L21/76846 , H01L21/76855 , H01L21/76876 , H01L21/76877 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A hole filling process for an integrated circuit in which two wiring levels in the integrated circuit are connected by a narrow hole, especially where the underlying level is silicon. First, a physical vapor deposition (PVD) process fills a barrier tri-layer into the hole. The barrier tri-layer includes sequential layers of Ti, TiN, and graded TiNx, grown under conditions of a high-density plasma. Thereafter, a first aluminum layer is PVD deposited under conditions of a high-density plasma. A filling aluminum layer is then deposited by standard PVD techniques.
摘要翻译： 用于集成电路的孔填充处理，其中集成电路中的两个布线电平通过窄孔连接，特别是在下层是硅的情况下。 首先，物理气相沉积（PVD）工艺将阻挡三层填充到孔中。 阻挡三层包括在高密度等离子体条件下生长的Ti，TiN和分级TiNx的顺序层。 此后，在高密度等离子体的条件下沉积第一铝层。 然后通过标准PVD技术沉积填充铝层。
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30.发明授权
公开(公告)号：US5972178A
公开(公告)日：1999-10-26
申请号：US481550
申请日：1995-06-07
IPC分类号： C01G23/00 , C23C14/06 , C23C14/16 , H01L21/203 , H01L21/28 , H01L21/285 , H01L21/768 , C23C14/34
CPC分类号： H01L21/76843 , C23C14/0641 , C23C14/0676 , C23C14/165
摘要： A continuous process for the deposition of robust titanium-containing barrier layers comprises sputtering in a single substrate sputtering chamber a first layer of titanium, sputtering a layer of titanium nitride thereover, treating the titanium nitride layer with a plasma containing oxygen while continuing to sputter the titanium target to deposit a thin layer of TiON, and finally sputtering a layer of titanium over the titanium nitride. The latter step removes impurities from the titanium target, preventing poisoning of the target. Thus subsequent substrates can be continuously processed in said chamber without degrading the barrier properties or poisoning the titanium target.
摘要翻译： 用于沉积坚固的含钛阻挡层的连续方法包括在单个基板溅射室中溅射第一层钛，在其上溅射氮化钛层，用含有氧的等离子体处理氮化钛层，同时继续溅射 钛靶以沉积TiON薄层，最后在钛氮化物上溅射一层钛。 后一步从钛靶去除杂质，防止靶物中毒。 因此，可以在所述室中连续处理后续的基板，而不会降低阻挡性能或使钛靶中毒。
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