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公开(公告)号：US20100291308A1
公开(公告)日：2010-11-18
申请号：US12466221
申请日：2009-05-14
申请人： Piero Sferlazzo , Martin Klein
发明人： Piero Sferlazzo , Martin Klein
CPC分类号： C23C14/562 , C23C14/541
摘要： A deposition system includes a drum for supporting a web substrate during deposition that defines a plurality of apertures in an outer surface for passing cooling gas. A gas manifold includes an input that is coupled to an output of a gas source and at least one output that is coupled to the plurality of apertures in the outer surface of the drum. The gas manifold provides gas to the plurality of apertures that flows between the outer surface of the drum and the web substrate, thereby increasing heat transfer from the web substrate to the drum. At least one deposition source is positioned so that material deposits on the web substrate.
摘要翻译： 沉积系统包括用于在沉积期间支撑卷材基材的滚筒，其在外表面中限定多个孔，用于通过冷却气体。 气体歧管包括耦合到气体源的输出的输入端和耦合到滚筒的外表面中的多个孔的至少一个输出。 气体歧管为在滚筒的外表面和幅材基底之间流动的多个孔提供气体，从而增加从幅材基底到滚筒的热传递。 定位至少一个沉积源，使得材料沉积在幅材基材上。
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公开(公告)号：US06530733B2
公开(公告)日：2003-03-11
申请号：US09917223
申请日：2001-07-27
IPC分类号： B65G4907
CPC分类号： H01L21/67346 , C23C14/50 , H01L21/68 , Y10S414/135 , Y10S414/139
摘要： A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.
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公开(公告)号：US06217272B1
公开(公告)日：2001-04-17
申请号：US09404516
申请日：1999-09-23
申请人： David Felsenthal , Chunghsin Lee , Piero Sferlazzo
发明人： David Felsenthal , Chunghsin Lee , Piero Sferlazzo
IPC分类号： B65G4907
CPC分类号： H01J37/3429 , C23C14/027 , C23C14/3407 , C23C14/35 , C23C14/352 , C23C14/566 , C23C14/568 , H01J37/3405 , Y10S414/135 , Y10S414/139 , Y10S414/141
摘要： An apparatus for simultaneously transporting and processing substrates is described. The apparatus includes a load lock that stores at least one substrate prior to processing and that stores at least one substrate after processing. A first transport mechanism transports at least one substrate into and out of the load lock. A multi-stage elevator is adapted to receive the first transport mechanism. A first process chamber is vertically disposed from the multi-stage elevator. The multi-stage elevator vertically transports at least one substrate into and out of the first process chamber. A second process chamber may be coupled to the multi-stage elevator. A second transport mechanism transports at least one substrate between the multi-stage elevator and the second process chamber.
摘要翻译： 描述用于同时传送和处理衬底的装置。 该装置包括在处理之前存储至少一个基板并且在处理之后存储至少一个基板的负载锁定。 第一输送机构将至少一个基板输送到和从负载锁定中移出。 多级电梯适于接收第一传送机构。 第一处理室从多级电梯垂直设置。 多级电梯垂直地将至少一个基板输送到第一处理室中和从第一处理室排出。 第二处理室可以耦合到多级电梯。 第二传送机构在多级电梯和第二处理室之间输送至少一个衬底。
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公开(公告)号：US5113074A
公开(公告)日：1992-05-12
申请号：US647509
申请日：1991-01-29
申请人： Piero Sferlazzo
发明人： Piero Sferlazzo
IPC分类号： C23C14/48 , C23C14/54 , H01J37/02 , H01J37/04 , H01J37/244 , H01J37/317 , H01L21/265
CPC分类号： H01J37/026 , H01J37/244 , H01J37/3171 , H01J2237/24455 , H01J2237/2449 , H01J2237/24585
摘要： A sensor positioned relative to an ion beam for use in an ion implantation system for doping semiconductor wafers. The sensor allows relatively accurate determination of ion beam potential so that steps can be taken to minimize this potential. In a preferred design, a number of electrodes are positioned relative the ion beam and biased at control voltages which allow the ion beam potential to be determined. In one embodiment, the ion beam potential is used to control injection of neutralizing electrons into the ion beam.
摘要翻译： 相对于离子束定位的传感器用于用于掺杂半导体晶片的离子注入系统。 传感器允许相对精确地确定离子束电位，从而可以采取步骤以使该电位最小化。 在优选的设计中，多个电极相对于离子束定位，并在允许确定离子束电位的控制电压下被偏置。 在一个实施例中，离子束电位用于控制将中和电子注入到离子束中。
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公开(公告)号：US08986451B2
公开(公告)日：2015-03-24
申请号：US12787082
申请日：2010-05-25
申请人： Piero Sferlazzo
发明人： Piero Sferlazzo
IPC分类号： C23C16/00 , C23C16/458 , C23C16/455 , C23C16/52 , H01L21/67 , H01L21/677 , H01L21/687
CPC分类号： C23C16/4584 , C23C16/45565 , C23C16/45578 , C23C16/52 , H01L21/67109 , H01L21/67784 , H01L21/68771
摘要： Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.
摘要翻译： 描述了包括沉积室，一个或多个衬底载体，气体注入器和加热系统的线性分批CVD系统。 每个衬底载体设置在沉积室中，并且具有至少一个容纳构造成容纳衬底的插座。 衬底载体被配置成将衬底保持在线性构型。 每个气体喷射器包括端口，该端口被配置成沿着一个或多个基板提供均匀分布的气体。 加热系统包括至少一个加热元件和用于均匀地控制基板的温度的加热控制模块。 该系统适用于基板的高体积CVD处理。 沉积室的窄宽使得前体气体能够沿反应室的长度均匀地分布在衬底上，并且与传统的沉积室相比允许更多数量的衬底被加工。
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公开(公告)号：US20120070916A1
公开(公告)日：2012-03-22
申请号：US13307239
申请日：2011-11-30
IPC分类号： H01L21/66
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。
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公开(公告)号：US08092599B2
公开(公告)日：2012-01-10
申请号：US11827133
申请日：2007-07-10
IPC分类号： C23C16/00 , C23C16/455 , H01L21/306
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。
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28.发明申请APPARATUS AND METHOD FOR ULTRA-SHALLOW IMPLANTATION IN A SEMICONDUCTOR DEVICE 审中-公开用于在半导体器件中超薄植入的装置和方法公开(公告)号：US20100330787A1
公开(公告)日：2010-12-30
申请号：US12377825
申请日：2007-08-17
申请人： Piero Sferlazzo
发明人： Piero Sferlazzo
IPC分类号： H01L21/265
CPC分类号： H01L21/26526 , H01L21/2236 , H01L21/2658 , H01L21/68764
摘要： Methods and devices for forming an ultra-thin doping layer in a semiconductor substrate include introducing a thin film of a dopant onto a surface of the substrate and driving at least a portion of the thin dopant layer into a surface of the semiconductor. Gas ions used in the driving-in process may be inert to minimize contamination during the drive in process. The thin films can be deposited using know methods, such as physical deposition and atomic layer deposition. The dopant layers can be driven into the surface of the semiconductor using known techniques, such as pulsed plasma discharge and ion beam. In some embodiments, a standard ion implanter can be retrofit to include a deposition source.
摘要翻译： 用于在半导体衬底中形成超薄掺杂层的方法和装置包括将掺杂剂的薄膜引入到衬底的表面上，并将薄掺杂剂层的至少一部分驱动到半导体的表面中。 在驱动过程中使用的气体离子可能是惰性的，以便在过程中驱动过程中的污染最小化。 可以使用诸如物理沉积和原子层沉积之类的已知方法来沉积薄膜。 可以使用已知的技术（例如脉冲等离子体放电和离子束）将掺杂剂层驱动到半导体的表面中。 在一些实施例中，可以改造标准离子注入机以包括沉积源。
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公开(公告)号：US20100310769A1
公开(公告)日：2010-12-09
申请号：US12479834
申请日：2009-06-07
申请人： Eric Armour , William E. Quinn , Piero Sferlazzo
发明人： Eric Armour , William E. Quinn , Piero Sferlazzo
IPC分类号： C23C16/44
CPC分类号： C23C16/54 , C23C16/4582 , C30B25/025 , C30B35/00
摘要： A continuous feed CVD system includes a wafer transport mechanism that transport a wafer through a deposition chamber during CVD processing. The deposition chamber defines a passage for the wafer to pass through while being transported by the wafer transport mechanism. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources are coupled to the gas input port of each of the plurality of process chambers.
摘要翻译： 连续进料CVD系统包括在CVD处理期间通过沉积室输送晶片的晶片输送机构。 淀积室限定一个通道，用于晶片通过，同时由晶片输送机构输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口，以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。
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公开(公告)号：US20090017190A1
公开(公告)日：2009-01-15
申请号：US11827133
申请日：2007-07-10
IPC分类号： C23C16/00
CPC分类号： C23C16/45589
摘要： A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.
摘要翻译： 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法，其中一个或多个衬底围绕轴线在载体上旋转，同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间，第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出，并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。
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