公开(公告)号：US20110293831A1

公开(公告)日：2011-12-01

申请号：US12787082

申请日：2010-05-25

申请人： Piero Sferlazzo

发明人： Piero Sferlazzo

IPC分类号： C23C16/52 ,  C23C16/44 ,  C23C16/46 ,  C23C16/00

CPC分类号： C23C16/4584 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/67109 ,  H01L21/67784 ,  H01L21/68771

摘要： Described is a linear batch CVD system that includes a deposition chamber, one or more substrate carriers, gas injectors and a heating system. Each substrate carrier is disposed in the deposition chamber and has at least one receptacle configured to receive a substrate. The substrate carriers are configured to hold substrates in a linear configuration. Each gas injector includes a port configured to supply a gas in a uniform distribution across one or more of the substrates. The heating system includes at least one heating element and a heating control module for uniformly controlling a temperature of the substrates. The system is suitable for high volume CVD processing of substrates. The narrow width of the deposition chamber enables a uniform distribution of precursor gases across the substrates along the length of the reaction chamber and permits a greater number of substrates to be processed in comparison to conventional deposition chambers.

摘要翻译： 描述了一种线性分批CVD系统，其包括沉积室，一个或多个衬底载体，气体注入器和加热系统。 每个衬底载体设置在沉积室中，并且具有至少一个容纳构造成容纳衬底的插座。 衬底载体被配置成将衬底保持在线性构型。 每个气体喷射器包括端口，该端口被配置成沿着一个或多个基板提供均匀分布的气体。 加热系统包括至少一个加热元件和用于均匀地控制基板的温度的加热控制模块。 该系统适用于基板的高体积CVD处理。 沉积室的窄宽使得前体气体能够沿反应室的长度均匀地分布在衬底上，并且与传统的沉积室相比允许更多数量的衬底被加工。

公开(公告)号：US06821912B2

公开(公告)日：2004-11-23

申请号：US09917224

申请日：2001-07-27

申请人： Martin P. Klein ,  David Felsenthal ,  Piero Sferlazzo

发明人： Martin P. Klein ,  David Felsenthal ,  Piero Sferlazzo

IPC分类号： H01L2131

CPC分类号： H01L21/67346 ,  C23C14/50 ,  C23C14/568 ,  H01L21/68 ,  Y10S414/135 ,  Y10S414/136 ,  Y10S414/138 ,  Y10S414/14 ,  Y10S414/141

摘要： A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.

摘要翻译： 基板处理托盘具有顶表面和多个侧表面。 顶表面具有至少一个适于容纳衬底的凹部。 凹部包括适于接触位于凹部中的基板的一部分的支撑结构以及适于容纳升降销的多个孔。 提升销可以最初延伸穿过孔，以支撑基板并缩回以将基板沉积到支撑结构上。 侧表面包括适于与位于处理室中的特征接合以便定位托盘的过程定位特征。 侧表面包括适于与端部执行器对准特征接合的定位特征，以在运输期间相对于端部执行器定位托盘。 侧表面包括适于在运输期间与末端执行器支撑特征相接合以支撑托盘的支撑特征。

公开(公告)号：US06669824B2

公开(公告)日：2003-12-30

申请号：US09840394

申请日：2001-04-23

申请人： Piero Sferlazzo ,  Chunghsin Lee

发明人： Piero Sferlazzo ,  Chunghsin Lee

IPC分类号： C23C1434

CPC分类号： C23C14/228 ,  C23C14/044 ,  C23C14/46

摘要： A deposition system is described. The deposition system includes a deposition source that generates deposition flux comprising neutral atoms and molecules. A shield defining an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux through the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned adjacent to the shield. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion.

摘要翻译： 描述了沉积系统。 沉积系统包括产生包含中性原子和分子的沉积通量的沉积源。 限定孔径的屏蔽件位于沉积焊剂的路径中。 屏蔽层将沉积磁通通过孔径，并且基本上阻止沉积磁通在其它地方传播通过屏蔽层。 衬底支撑件邻近屏蔽件定位。 双扫描系统以第一和第二运动相对于孔径扫描基板支撑。

公开(公告)号：US5811823A

公开(公告)日：1998-09-22

申请号：US757726

申请日：1996-11-26

申请人： Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

发明人： Julian G. Blake ,  Piero Sferlazzo ,  Peter H. Rose ,  Adam A. Brailove

IPC分类号： H01J37/04 ,  C23C14/48 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/30 ,  H01J37/304 ,  H01J37/317 ,  H01L21/00 ,  H01L21/265 ,  H01L21/677 ,  H01L21/683

CPC分类号： H01L21/67109 ,  H01J27/14 ,  H01J37/08 ,  H01J37/18 ,  H01J37/3002 ,  H01J37/3007 ,  H01J37/304 ,  H01J37/3171 ,  H01L21/67069 ,  H01L21/67739 ,  H01L21/67748 ,  H01L21/67751 ,  H01L21/67778 ,  H01L21/6838 ,  H01J2237/022 ,  H01J2237/083 ,  H01J2237/184 ,  H01J2237/2001 ,  H01J2237/2007 ,  H01J2237/20228 ,  H01J2237/204 ,  H01J2237/31701 ,  H01J2237/31705

摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.

摘要翻译： 快速有效地处理大量平板显示器的高通量离子注入系统。 离子注入系统具有离子源，电极组件，安装工件的平台和离子束测量结构。 与电极组件结合的离子源形成带状束形状的离子束。 离子束的形成和定向使得离子束的第一部分处理工件，而离子束的第二部分由束测量结构同时测量。 控制器从离子束参数获取束测量结构的数据，然后根据数据产生离子注入系统的控制信号。

公开(公告)号：US20120034733A1

公开(公告)日：2012-02-09

申请号：US13101538

申请日：2011-05-05

申请人： Piero Sferlazzo ,  Thomas Michael Lampros

发明人： Piero Sferlazzo ,  Thomas Michael Lampros

IPC分类号： H01L31/0272 ,  C23C16/06

CPC分类号： C23C14/5866 ,  C23C14/165 ,  C23C14/205 ,  C23C14/562 ,  H01L31/18

摘要： Described are a system and a method for depositing a thin film on a substrate. In some embodiments, the system includes a substrate transport system to transport a plurality of discrete substrates, such as glass substrates or wafers, along a closed path. The system also includes a metal deposition zone, a selenization zone and a cooling chamber each disposed on the closed path. During transport along the closed path, the metal deposition zone deposits a layer of a composite metal onto the discrete substrates and the selenization zone selenizes the layer of the composite metal. The cooling zone cools the discrete substrates prior to a subsequent pass through the metal deposition zone and the selenization zone.

摘要翻译： 描述了在衬底上沉积薄膜的系统和方法。 在一些实施例中，该系统包括沿封闭路径输送多个离散基板（例如玻璃基板或晶片）的基板输送系统。 该系统还包括金属沉积区，硒化区和每个设置在封闭路径上的冷却室。 在沿着封闭路径运输的过程中，金属沉积区将一层复合金属沉积在离散的基底上，硒化区将复合金属层的硒化。 在随后通过金属沉积区和硒化区之前，冷却区冷却离散的衬底。

公开(公告)号：US20120031604A1

公开(公告)日：2012-02-09

申请号：US13173100

申请日：2011-06-30

申请人： Piero Sferlazzo ,  Michael R. Mitrano ,  Thomas Michael Lampros

发明人： Piero Sferlazzo ,  Michael R. Mitrano ,  Thomas Michael Lampros

IPC分类号： F28F7/00

CPC分类号： B01D53/002 ,  B01D2257/55 ,  B01D2257/60 ,  B01D2258/0216 ,  H01L31/0322 ,  H01L31/206 ,  Y02E10/541 ,  Y02P70/521

摘要： Described is a vapor trap that enables the capture of material from the condensate of a vapor. The vapor trap includes an inner module, outer module and cooling system. The inner module has a transport channel to pass a web substrate or discrete substrate, and to limit conductance of the vapor. Plenums extend from the transport channel to an outer surface of the inner module. The inner module is configured to be at a temperature that is greater than a condensation temperature of the vapor. The outer module includes collection surfaces disposed across from the outer ends of the plenums. The temperature of the collection surfaces is less that a condensation temperature of the vapor. In various embodiments, the vapor trap is a selenium trap that can be used, for example, in a copper indium gallium diselenide (CIGS) deposition system for fabrication of thin film solar cells and modules.

摘要翻译： 描述了一种能够从蒸汽冷凝物中捕获材料的蒸汽阱。 蒸汽疏水阀包括内部模块，外部模块和冷却系统。 内部模块具有用于通过网状基板或离散基板的输送通道，并且限制蒸气的电导。 整体从运输通道延伸到内部模块的外表面。 内部模块被配置成处于大于蒸气冷凝温度的温度。 外部模块包括从集气室的外端部横跨设置的收集表面。 收集表面的温度小于蒸气的冷凝温度。 在各种实施方案中，蒸气阱是硒阱，其可用于例如用于制造薄膜太阳能电池和模块的铜铟镓硒（CIGS）沉积系统。

公开(公告)号：US20100221426A1

公开(公告)日：2010-09-02

申请号：US12395750

申请日：2009-03-02

申请人： Piero Sferlazzo

发明人： Piero Sferlazzo

IPC分类号： C23C16/44 ,  C23C16/46 ,  C23C16/458

CPC分类号： C23C16/545 ,  C23C16/45551 ,  C23C16/46

摘要： A web substrate atomic layer deposition system includes at least one roller that transports a surface of a web substrate through a plurality of processing chambers. The plurality of processing chambers includes a first precursor reaction chamber that exposes the surface of the web substrate to a desired partial pressure of first precursor gas, thereby forming a first layer on the surface of the web substrate. A purging chamber purges the surface of the web substrate with a purge gas. A vacuum chamber removes gas from the surface of the substrate. A second precursor reaction chamber exposes the surface of the web substrate to a desired partial pressure of the second precursor gas, thereby forming a second layer on the surface of the web substrate.

摘要翻译： 网状基材原子层沉积系统包括至少一个辊，其通过多个处理室传送幅材基材的表面。 多个处理室包括第一前体反应室，其将幅材基材的表面暴露于期望的第一前体气体的分压，从而在幅材基材的表面上形成第一层。 净化室用净化气体清洗幅材基材的表面。 真空室从基板的表面去除气体。 第二前体反应室将幅材基材的表面暴露于第二前体气体的期望分压，从而在幅材基材的表面上形成第二层。

公开(公告)号：US20070151842A1

公开(公告)日：2007-07-05

申请号：US11610665

申请日：2006-12-14

申请人： Richard DeVito ,  Martin Klein ,  Piero Sferlazzo

发明人： Richard DeVito ,  Martin Klein ,  Piero Sferlazzo

IPC分类号： C23C14/00 ,  C23C14/32

CPC分类号： C23C14/0073 ,  C23C14/0052 ,  C23C14/044 ,  C23C14/35 ,  C23C14/46 ,  C23C14/568 ,  H01J37/185 ,  H01J37/3178 ,  H01J37/3233 ,  H01J37/32761 ,  H01J37/34 ,  H01J2237/2006 ,  H01J2237/202 ,  H01J2237/3146

摘要： A reactive sputtering system includes a vacuum chamber and a reactive ion source that is positioned inside the vacuum chamber. The reactive ion source generates a reactive ion beam from a reactant gas. A sputtering chamber is positioned in the vacuum chamber. The sputtering chamber includes a sputter source having a sputtering target that generates sputtering flux, walls that contain an inert gas, and a seal that impedes the reactant gas from entering into the sputtering chamber and that impedes inert gas and sputtered material from escaping into the vacuum chamber. A transport mechanism transports a substrate under the reactive ion source and through the sputtering chamber. The substrate is exposed to the reactive ion beam while passing under the reactive ion source and then is exposed to sputtering flux while passing through the sputtering chamber.

摘要翻译： 反应性溅射系统包括真空室和位于真空室内的反应离子源。 反应离子源从反应气体产生反应离子束。 溅射室位于真空室中。 溅射室包括溅射源，其具有产生溅射焊剂的溅射靶，含有惰性气体的壁和阻止反应气体进入溅射室的密封件，并阻止惰性气体和溅射材料逸出到真空中 房间。 输送机构将反应离子源下方的基板输送到溅射室。 当反应离子源通过时，将衬底暴露于反应离子束，然后在通过溅射室的同时暴露于溅射焊剂。

公开(公告)号：US06682288B2

公开(公告)日：2004-01-27

申请号：US09916643

申请日：2001-07-27

申请人： Martin P. Klein ,  David Felsenthal ,  Piero Sferlazzo

发明人： Martin P. Klein ,  David Felsenthal ,  Piero Sferlazzo

IPC分类号： B65G4907

CPC分类号： H01L21/67346 ,  C23C14/50 ,  C23C14/568 ,  H01L21/68 ,  Y10S414/139

摘要： A substrate processing pallet has a top surface and a plurality of side surfaces. The top surface has at least one recess adapted to receive a substrate. The recess includes a support structure adapted to contact a portion of a substrate seated in the recess and a plurality of apertures each adapted to accommodate a lift pin. Lift pins can extend through the apertures initially to support the substrate and retract to deposit the substrate onto the support structure. A side surface includes a process positioning feature adapted to engage with a feature located in a process chamber to position the pallet. A side surface includes a positioning feature adapted to engage with an end effector alignment feature to position the pallet with respect to the end effector during transport. A side surface includes support features adapted to engage with end effector support features to support the pallet during transport.

公开(公告)号：US06495010B2

公开(公告)日：2002-12-17

申请号：US09840393

申请日：2001-04-23

申请人： Piero Sferlazzo

发明人： Piero Sferlazzo

IPC分类号： C23C1435

CPC分类号： C23C14/228 ,  C23C14/044 ,  C23C14/46

摘要： A differentially pumped deposition system is described that includes a deposition source, such as a magnetron sputtering source, that is positioned in a first chamber. The deposition source generates deposition flux comprising neutral atoms and molecules. A shield that defines an aperture is positioned in the path of the deposition flux. The shield passes the deposition flux though the aperture and substantially blocks the deposition flux from propagating past the shield everywhere else. A substrate support is positioned in the second chamber adjacent to the shield. The pressure in the second chamber is lower than a pressure in the first chamber. A dual-scanning system scans the substrate support relative to the aperture with a first and a second motion, thereby improving uniformity of the deposited thin fill.

摘要翻译： 描述了差分泵浦的沉积系统，其包括定位在第一室中的诸如磁控溅射源的沉积源。 沉积源产生包含中性原子和分子的沉积通量。 限定孔径的屏蔽件位于沉积焊剂的路径中。 屏蔽层通过孔径传递沉积磁通，并且基本上阻止沉积磁通在其它地方传播通过屏蔽层。 衬底支撑件定位在与屏蔽件相邻的第二室中。 第二室中的压力低于第一室中的压力。 双扫描系统利用第一和第二运动相对于孔径扫描基板支撑，从而提高沉积的薄填充物的均匀性。