Continuous Feed Chemical Vapor Deposition System
    1.
    发明申请
    Continuous Feed Chemical Vapor Deposition System 审中-公开
    连续进料化学气相沉积系统

    公开(公告)号:US20100310769A1

    公开(公告)日:2010-12-09

    申请号:US12479834

    申请日:2009-06-07

    IPC分类号: C23C16/44

    摘要: A continuous feed CVD system includes a wafer transport mechanism that transport a wafer through a deposition chamber during CVD processing. The deposition chamber defines a passage for the wafer to pass through while being transported by the wafer transport mechanism. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources are coupled to the gas input port of each of the plurality of process chambers.

    摘要翻译: 连续进料CVD系统包括在CVD处理期间通过沉积室输送晶片的晶片输送机构。 淀积室限定一个通道,用于晶片通过,同时由晶片输送机构输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口,以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

    Roll-to-Roll Chemical Vapor Deposition System
    2.
    发明申请
    Roll-to-Roll Chemical Vapor Deposition System 审中-公开
    卷对卷化学气相沉积系统

    公开(公告)号:US20100310766A1

    公开(公告)日:2010-12-09

    申请号:US12479824

    申请日:2009-06-07

    IPC分类号: C23C16/458 C23C16/44

    摘要: A roll-to-roll CVD system includes at least two rollers that transport a web through a deposition chamber during CVD processing. The deposition chamber defines a passage for the web to pass through while being transported by the at least two rollers. The deposition chamber includes a plurality of process chambers that are isolated by barriers which maintain separate process chemistry in each of the plurality of process chambers. Each of the plurality of process chambers includes a gas input port and a gas exhaust port, and a plurality of CVD gas sources. At least two of the plurality of CVD gas sources is coupled to the gas input port of each of the plurality of process chambers.

    摘要翻译: 卷对卷CVD系统包括在CVD处理期间将幅材输送通过沉积室的至少两个辊。 沉积室限定了通过所述纤维网通过的通道,同时被所述至少两个辊输送。 沉积室包括由在多个处理室中的每一个中保持分离的工艺化学物质的隔离物隔离的多个处理室。 多个处理室中的每一个包括气体输入端口和排气口,以及多个CVD气体源。 多个CVD气体源中的至少两个耦合到多个处理室中的每一个的气体输入端口。

    MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS
    3.
    发明申请
    MOVABLE INJECTORS IN ROTATING DISC GAS REACTORS 审中-公开
    可旋转注射器旋转盘式反应器

    公开(公告)号:US20120070916A1

    公开(公告)日:2012-03-22

    申请号:US13307239

    申请日:2011-11-30

    IPC分类号: H01L21/66

    CPC分类号: C23C16/45589

    摘要: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

    摘要翻译: 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法,其中一个或多个衬底围绕轴线在载体上旋转,同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间,第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出,并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

    Movable injectors in rotating disc gas reactors
    4.
    发明授权
    Movable injectors in rotating disc gas reactors 失效
    可旋转注射器在旋转盘式气体反应器

    公开(公告)号:US08092599B2

    公开(公告)日:2012-01-10

    申请号:US11827133

    申请日:2007-07-10

    CPC分类号: C23C16/45589

    摘要: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

    摘要翻译: 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法,其中一个或多个衬底围绕轴线在载体上旋转,同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间,第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出,并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

    Movable injectors in rotating disc gas reactors
    5.
    发明申请
    Movable injectors in rotating disc gas reactors 失效
    可旋转注射器在旋转盘式气体反应器

    公开(公告)号:US20090017190A1

    公开(公告)日:2009-01-15

    申请号:US11827133

    申请日:2007-07-10

    IPC分类号: C23C16/00

    CPC分类号: C23C16/45589

    摘要: A system and method for uniform deposition of material layers on wafers in a rotating disk chemical vapor deposition reaction system is provided, wherein one or more substrates are rotated on a carrier about an axis while maintaining surfaces of the one or more substrates substantially perpendicular to the axis of rotation and facing in an upstream direction along the axis of rotation. During rotating a first gas is discharged in the downstream direction towards the one or more substrates from a first set of gas inlets. A second gas is discharged in the downstream direction towards the one or more substrates from at least one movable gas injector, and the at least one movable gas inlet is moved with a component of motion in a radial direction towards or away from the axis of rotation.

    摘要翻译: 提供了一种用于在旋转盘化学气相沉积反应系统中在晶片上均匀沉积材料层的系统和方法,其中一个或多个衬底围绕轴线在载体上旋转,同时保持所述一个或多个衬底的表面基本上垂直于 旋转轴线并沿着旋转轴向上游方向。 在旋转期间,第一气体沿着下游方向从第一组气体入口朝向一个或多个基板排出。 第二气体沿下游方向从至少一个可移动气体喷射器朝向一个或多个基板排出,并且至少一个可移动气体入口以径向方向的运动分量朝向或远离旋转轴线移动 。

    Vapor Phase Epitaxy System
    6.
    发明申请
    Vapor Phase Epitaxy System 审中-公开
    气相外延系统

    公开(公告)号:US20100086703A1

    公开(公告)日:2010-04-08

    申请号:US12572245

    申请日:2009-10-01

    IPC分类号: C23C16/50 C23C16/00 H05H1/24

    摘要: A vapor phase epitaxy system includes a platen that supports substrates for vapor phase epitaxy and a gas injector. The gas injector injects a first precursor gas into a first region and injects a second precursor gas into a second region. At least one electrode is positioned in the first region so that first precursor gas molecules flow proximate to the electrode. The at least one electrode is positioned to be substantially isolated from a flow of the second precursor gas. A power supply is electrically connected to the at least one electrode. The power supply generates a current that heats the at least one electrode so as to thermally activate at least some of the first precursor gas molecules flowing proximate to the at least one electrode.

    摘要翻译: 气相外延系统包括支撑用于气相外延的衬底的压板和气体注入器。 气体喷射器将第一前体气体注入第一区域并将第二前体气体注入第二区域。 至少一个电极位于第一区域中,使得第一前体气体分子流到电极附近。 至少一个电极定位成与第二前体气体的流动基本隔离。 电源电连接到至少一个电极。 电源产生加热至少一个电极的电流,以便热激活靠近至少一个电极流动的至少一些第一前体气体分子。