利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

132 条记录 (耗时 0.034 秒)

    High ion beam etch selectivity for partial pole trim application
    22.
    发明授权
    High ion beam etch selectivity for partial pole trim application 失效
    高离子束蚀刻选择性用于部分极细修补应用

    公开(公告)号：US06243939B1

    公开(公告)日：2001-06-12

    申请号：US09412630

    申请日：1999-10-04

    申请人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

    发明人： Mao-Min Chen ,  Cherng-Chyi Han ,  Cheng-Teh Wu ,  Jei-Wei Chang

    IPC分类号： G11B542

    CPC分类号： G11B5/3967 ,  G11B5/3163 ,  Y10T29/49044 ,  Y10T29/49046

    摘要： A method of manufacturing a magnetic transducer structure using a special pole etch using an IBE preferably with Kr or Xe, and a write gap material with a high IBE etch rate such as Ta, NiCu alloys, Pd, Pd—Cu alloys. A first layer of pole material and a write gap insulating layer are formed over the substrate. The write gap layer is composed of a material having a high ion beam etch rate compared to the first and second layers of pole material. The write gap insulating layer is preferably composed of Ni—Cu alloy, Pd, Pd—Cu alloys. Next, a second layer of pole material is formed on the first insulating layer. In a key step, we ion beam etch (IBE) the second pole; the write gap insulating layer and the first layer; the second pole serving as an etch mask during the ion beam etching to form a head. In a second preferred embodiment of the invention, the ion beam etching performed using a gas of Kr or Xe. The invention teaches a high IBE etch selectivity from the write gap dielectric to the upper pole (NeFe) for partial pole trim (PPT) applications by three embodiments: (a) selecting high IBE rate gap dielectric materials (e.g., NiCu alloys, Pd, and Pd—Cu alloys, (b) using an IBE gas Kr or Xr or both, instead of Ar, and (c) both (a) and (b).

    摘要翻译： 使用优选用Kr或Xe的IBE制造使用特殊极蚀刻的磁换能器结构的方法以及具有高IBE蚀刻速率的写间隙材料，例如Ta，NiCu合金，Pd，Pd-Cu合金。 第一层极材料层和写间隙绝缘层形成在衬底上。 写间隙层由与第一和第二极材料层相比具有高离子束蚀刻速率的材料组成。 写间隙绝缘层优选由Ni-Cu合金，Pd，Pd-Cu合金构成。 接下来，在第一绝缘层上形成第二极极材料层。 在关键的一步中，我们离子束蚀刻（IBE）是第二极; 写间隙绝缘层和第一层; 第二极在离子束蚀刻期间用作蚀刻掩模以形成头部。 在本发明的第二优选实施例中，使用Kr或Xe的气体进行离子束蚀刻。 本发明通过三个实施例教导了从写间隙电介质到上极（NeFe）的高IBE蚀刻选择性：（a）选择高IBE速率间隙电介质材料（例如，NiCu合金，Pd， 和Pd-Cu合金，（b）使用IBE气体Kr或Xr或两者代替Ar，和（c）（a）和（b）两者。

    ABS through aggressive stitching
    25.
    发明授权
    ABS through aggressive stitching 失效
    ABS通过积极的拼接

    公开(公告)号：US07251102B2

    公开(公告)日：2007-07-31

    申请号：US10782496

    申请日：2004-02-19

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Laurie Lauchlan ,  Lei Zhang

    IPC分类号： G11B5/127

    CPC分类号： G11B5/33 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/4906 ,  Y10T29/49062 ,  Y10T29/49064

    摘要： Aggressive (i.e. tight tolerance) stitching offers several advantages for magnetic write heads but at the cost of some losses during pole trimming. This problem has been overcome by replacing the alumina filler layer, that is used to protect the stitched pole during trimming, with a layer of electro-plated material. Because of the superior step coverage associated with the plating method of deposition, pole trimming can then proceed without the introduction of stresses to the stitched pole while it is being trimmed.

    摘要翻译： 积极（即紧公差）缝合为磁性写入头提供了几个优点，但是在极修整期间以一些损失为代价。 通过用一层电镀材料代替在修整期间用于保护缝合极的氧化铝填料层已经克服了这个问题。 由于与沉积电镀方法相关的优越的台阶覆盖，因此可以进行极细修剪，而不会在缝合极被修剪时引入应力。

    Method to make abutted junction GMR head without lead shunting
    26.
    发明授权
    Method to make abutted junction GMR head without lead shunting 失效
    在没有引线分流的情况下制造对接接头GMR头的方法

    公开(公告)号：US07196876B2

    公开(公告)日：2007-03-27

    申请号：US10236359

    申请日：2002-09-06

    申请人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    发明人： Cherng-Chyi Han ,  Mao-Min Chen ,  Pokang Wang

    IPC分类号： G11B5/39 ,  G11B5/33 ,  G11B5/127

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3903 ,  Y10T29/49044 ,  Y10T29/49052

    摘要： A method for forming an abutted junction GMR bottom spin valve sensor in which the free layer has a maximum effective length due to the elimination or minimization of bias layer and conducting lead layer overspreading onto the sensor element and the consequent reduction of current shunting. The overspreading is eliminated by forming a thin dielectric layer on the upper surface of the sensor element. When the biasing and conducting leads are formed on the abutted junction, they overspread onto this layer and the overspread can be removed by an ion-milling process during which the dielectric layer protects the sensor.

    摘要翻译： 用于形成邻接结GMR底部自旋阀传感器的方法，其中自由层由于偏置层的消除或最小化而导致最大有效长度，并且导致引线层过度传播到传感器元件上，从而减少了电流分流。 通过在传感器元件的上表面上形成薄的电介质层来消除超扩展。 当偏置和导电引线形成在邻接接头上时，它们被扩展到该层上，并且可以通过离子铣削工艺去除超扩展，其中电介质层保护传感器。

    Low DC coil resistance planar writer
    27.
    发明授权
    Low DC coil resistance planar writer 失效
    低直流线圈电阻平面写入器

    公开(公告)号：US07126789B2

    公开(公告)日：2006-10-24

    申请号：US10633133

    申请日：2003-08-01

    申请人： Cherng Chyi Han ,  Mao-Min Chen

    发明人： Cherng Chyi Han ,  Mao-Min Chen

    IPC分类号： G11B5/147

    CPC分类号： G11B5/3103 ,  Y10T29/49032

    摘要： Present processes used for planarizing a cavity filled with a coil and hard baked photoresist require that a significant amount of the thickness of the coils be removed. This increases the DC resistance of the coil. In the present invention, CMP is terminated as soon as the coils are exposed, allowing their full thickness to be retained and resulting in minimum DC resistance. Application of this process to the manufacture of a planar magnetic write head is described.

    摘要翻译： 用于平坦化填充有线圈和硬烘烤光致抗蚀剂的空腔的现有方法需要去除大量的线圈厚度。 这增加了线圈的直流电阻。 在本发明中，一旦线圈暴露，CMP就终止，允许其保持其全部厚度并且导致最小的直流电阻。 描述了该方法在平面磁写头的制造中的应用。