Ultra thin seed layer for CPP or TMR structure
    25.
    发明申请
    Ultra thin seed layer for CPP or TMR structure 有权
    用于CPP或TMR结构的超薄种子层

    公开(公告)号:US20070146928A1

    公开(公告)日:2007-06-28

    申请号:US11317598

    申请日:2005-12-23

    IPC分类号: G11B5/127

    摘要: Improved magnetic devices have been fabricated by replacing the conventional seed layer (typically Ta) with a bilayer of Ru on Ta. Although both Ru and Ta layers are ultra thin (between 5 and 20 Angstroms), good exchange bias between the seed and the AFM layer (IrMn about 70 Angstroms thick) is retained. This arrangement facilitates minimum shield-to-shield spacing and gives excellent performance in CPP, CCP-CPP, or TMR configurations.

    摘要翻译: 已经通过用Ta上的Ru的双层代替常规种子层(通常为Ta)来制造改进的磁性器件。 虽然Ru和Ta层都是超薄的(5到20埃之间),但保留种子和AFM层之间良好的交换偏差(约为70埃的IrMn)。 这种安排有助于最小的屏蔽间隔,并在CPP,CCP-CPP或TMR配置中提供出色的性能。

    Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer
    28.
    发明申请
    Process of octagonal pole for microwave assisted magnetic recording (MAMR) writer 有权
    微波辅助磁记录(MAMR)作者八角极的过程

    公开(公告)号:US20110216447A1

    公开(公告)日:2011-09-08

    申请号:US12660819

    申请日:2010-03-03

    IPC分类号: G11B5/33 G03F7/20

    摘要: A microwave assisted magnetic recording writer is disclosed with an octagonal write pole having a top portion including a trailing edge that is self aligned to a spin transfer oscillator (STO). Leading and trailing edges are connected by two sidewalls each having three sections. A first section on each side is coplanar with the STO sidewalls and is connected to a sloped second section at a first corner. Each second section is connected to a third section at a second corner where the distance between second corners is greater than the distance between first corners. A method of forming the writer begins with a trapezoidal shaped write pole in an insulation layer. Two ion beam etch (IBE) steps are used to shape top and middle portions of the write pole and narrow the pole width to

    摘要翻译: 公开了一种具有八角写磁极的微波辅助磁记录装置,其具有包括与自旋转移振荡器(STO)自对准的后沿的顶部。 前缘和后缘由具有三个部分的两个侧壁连接。 每侧的第一部分与STO侧壁共面,并且在第一角处连接到倾斜的第二部分。 每个第二部分连接到第二角处的第三部分,其中第二角之间的距离大于第一角之间的距离。 一种形成写入器的方法从绝缘层中的梯形写入极开始。 使用两个离子束蚀刻(IBE)步骤来形成写入极的顶部和中间部分,并且将极宽度窄化到<50nm而不破裂。 最后,在STO上形成一个后挡板。