公开(公告)号：US20130157463A1

公开(公告)日：2013-06-20

申请号：US13325797

申请日：2011-12-14

申请人： Dario L. Goldfarb ,  Martin Glodde ,  Wu-Song Huang ,  Takeshi Kinsho ,  Wai-Kin Li ,  Kazumi Noda ,  Masaki Ohashi ,  Seiichiro Tachibana

发明人： Dario L. Goldfarb ,  Martin Glodde ,  Wu-Song Huang ,  Takeshi Kinsho ,  Wai-Kin Li ,  Kazumi Noda ,  Masaki Ohashi ,  Seiichiro Tachibana

IPC分类号： H01L21/302 ,  G03F7/207 ,  G02B5/22

CPC分类号： G03F7/094 ,  G02B5/208 ,  G02B5/223 ,  G03F7/091 ,  G03F7/105 ,  G03F9/7026

摘要： The present invention relates to a near-infrared (NIR) film composition for use in vertical alignment and correction in the patterning of integrated semiconductor wafers and a pattern forming method using the composition. The NIR absorbing film composition includes a NIR absorbing dye having a polymethine cation and a crosslinkable anion, a crosslinkable polymer and a crosslinking agent. The patterning forming method includes aligning and focusing a focal plane position of a photoresist layer by sensing near-infrared emissions reflected from a substrate containing the photoresist layer and a NIR absorbing layer formed from the NIR absorbing film composition under the photoresist layer. The NIR absorbing film composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate having complex buried topography.

摘要翻译： 本发明涉及用于集成半导体晶片的图案化的垂直取向和校正的近红外（NIR）膜组合物和使用该组合物的图案形成方法。 近红外吸收膜组合物包括具有聚甲炔阳离子和可交联阴离子的NIR吸收染料，可交联聚合物和交联剂。 图案形成方法包括通过感测从包含光致抗蚀剂层的基板反射的近红外发射和由光致抗蚀剂层下的NIR吸收膜组合物形成的NIR吸收层来对准和聚焦光致抗蚀剂层的焦平面位置。 近红外吸收膜组合物和图案形成方法对于在具有复杂掩埋形貌的半导体衬底上形成材料图案特别有用。

公开(公告)号：US20120112302A1

公开(公告)日：2012-05-10

申请号：US12941375

申请日：2010-11-08

申请人： Wai-Kin Li ,  Wu-Song Huang ,  Dario Leonardo Goldfarb ,  Martin Glodde ,  Edward Engbrecht ,  Yiheng Xu

发明人： Wai-Kin Li ,  Wu-Song Huang ,  Dario Leonardo Goldfarb ,  Martin Glodde ,  Edward Engbrecht ,  Yiheng Xu

IPC分类号： H01L31/0232

CPC分类号： H01L21/0332 ,  G03F7/091 ,  G03F7/094 ,  G03F9/7026

摘要： A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.

摘要翻译： 描述了改善半导体晶片的聚焦调平响应的方法。 该方法包括在半导体衬底上组合有机和无机或金属近红外（NIR）硬掩模; 在组合的有机NIR吸收和无机或金属NIR吸收硬掩模上形成抗反射涂层（ARC）层; 以及在所述ARC层上形成光致抗蚀剂层。 还描述了半导体结构，其包括基板，位于结构上方的抗蚀剂层; 以及位于衬底上方的吸收层。 吸收层包括无机或金属NIR吸收硬掩模层。

公开(公告)号：US08158014B2

公开(公告)日：2012-04-17

申请号：US12139722

申请日：2008-06-16

申请人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： C03C15/00 ,  H01L21/31

CPC分类号： G03F7/70466 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24802

摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.

摘要翻译： 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外部的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

公开(公告)号：US20120028476A1

公开(公告)日：2012-02-02

申请号：US12846020

申请日：2010-07-29

申请人： Wai-Kin Li ,  Wu-Song Huang ,  Joy Cheng ,  Kuang-Jung Chen

发明人： Wai-Kin Li ,  Wu-Song Huang ,  Joy Cheng ,  Kuang-Jung Chen

IPC分类号： H01L21/312

CPC分类号： H01L21/0337 ,  H01L21/0338

摘要： Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.

摘要翻译： 本发明的实施例提供一种形成半导体结构的方法。 该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。 在一个实施例中，形状是环，并且形成一组形状包括形成均匀且平直间隔的一组环。 在另一个实施方案中，使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块，并且在每四（4）个正方形相邻的环周围仅形成一个圆柱形块。

公开(公告)号：US20100248147A1

公开(公告)日：2010-09-30

申请号：US12813628

申请日：2010-06-11

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara R. Varanasi

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara R. Varanasi

IPC分类号： G03F7/004

CPC分类号： G03F7/0048 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A photoresist composition and methods using the photoresist composition in multiple exposure/multiple layer processes. The photoresist composition includes a polymer comprising repeat units having a hydroxyl moiety; a photoacid generator; and a solvent. The polymer when formed on a substrate is substantially insoluble to the solvent after heating to a temperature of about 150° C. or greater. One method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second non photoresist layer on the substrate and patterned first photoresist layer. Another method includes forming a first photoresist layer on a substrate, patternwise exposing the first photoresist layer, forming a second photoresist layer on the substrate and patterned first photoresist layer and patternwise exposing the second photoresist layer.

摘要翻译： 光致抗蚀剂组合物和在多次曝光/多层工艺中使用光致抗蚀剂组合物的方法。 光致抗蚀剂组合物包括包含具有羟基部分的重复单元的聚合物; 光致酸发生器; 和溶剂。 形成在基材上的聚合物在加热至约150℃或更高的温度之后基本上不溶于溶剂。 一种方法包括在衬底上形成第一光致抗蚀剂层，图案地暴露第一光致抗蚀剂层，在衬底上形成第二非光致抗蚀剂层并且形成图案化的第一光致抗蚀剂层。 另一种方法包括在衬底上形成第一光致抗蚀剂层，以图形方式暴露第一光致抗蚀剂层，在衬底上形成第二光致抗蚀剂层并图案化的第一光致抗蚀剂层和图案地曝光第二光致抗蚀剂层。

公开(公告)号：US20090311491A1

公开(公告)日：2009-12-17

申请号：US12139722

申请日：2008-06-16

申请人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： G03F7/20 ,  B32B5/00

CPC分类号： G03F7/70466 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24802

摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.

摘要翻译： 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外部的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

公开(公告)号：US20090208865A1

公开(公告)日：2009-08-20

申请号：US12033303

申请日：2008-02-19

申请人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy A. Brunner ,  Sean D. Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/004 ,  G03F7/00

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。

公开(公告)号：US20080102401A1

公开(公告)日：2008-05-01

申请号：US11554877

申请日：2006-10-31

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Yi-Hsiung S. Lin

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Yi-Hsiung S. Lin

IPC分类号： G03C1/00

CPC分类号： G03F7/0758 ,  G03F7/0045

摘要： A resist polymer that has nano-scale patterns located therein that are in the form of sub lithographic hollow pores (or openings) that are oriented in a direction that is substantially perpendicular with that of its major surfaces (top and bottom) is provided. Such a resist polymer having the nano-scale patterns is used as an etch mask transferring nano-scale patterns to an underlying substrate such as, for example, dielectric material. After the transferring of the nano-scale patterns into the substrate, nano-scale voids (or openings) having a width of less than 50 nm are created in the substrate. The presence of the nano-scale voids in a dielectric material lowers the dielectric constant, k, of the original dielectric material. In accordance with an aspect of the present invention, the inventive resist polymer comprises a copolymer that includes a first monomer unit (A) that contains a Si-containing component, and a second monomer unit (B) that contains an organic component, wherein said two monomer units (A and B) have different etch rates.

摘要翻译： 提供具有位于其中的纳米级图案的抗蚀剂聚合物，其为沿与其主表面（顶部和底部）基本垂直的方向取向的亚光刻中空孔（或开口）的形式。 具有纳米尺度图案的这种抗蚀剂聚合物被用作将纳米尺度图案转移到诸如介电材料的下层基底的蚀刻掩模。 在将纳米尺度图案转移到基底中之后，在基底中产生宽度小于50nm的纳米级空隙（或开口）。 电介质材料中纳米尺度空隙的存在降低了原始电介质材料的介电常数k。 根据本发明的一个方面，本发明的抗蚀剂聚合物包括包含含有含Si组分的第一单体单元（A）和含有有机组分的第二单体单元（B）的共聚物，其中所述 两个单体单元（A和B）具有不同的蚀刻速率。

公开(公告)号：US09449822B2

公开(公告)日：2016-09-20

申请号：US12846020

申请日：2010-07-29

申请人： Wai-Kin Li ,  Wu-Song Huang ,  Joy Cheng ,  Kuang-Jung Chen

发明人： Wai-Kin Li ,  Wu-Song Huang ,  Joy Cheng ,  Kuang-Jung Chen

IPC分类号： H01L21/033

CPC分类号： H01L21/0337 ,  H01L21/0338

摘要： Embodiments of the present invention provide a method of forming a semiconductor structure. The method includes forming a set of shapes on top of a substrate; applying a layer of copolymer covering the substrate; causing the copolymer to form a plurality of cylindrical blocks both inside and outside the shapes; forming a pattern of contact holes from the plurality of cylindrical blocks; and transferring the pattern of contact holes to the substrate to form the semiconductor structure. In one embodiment, the shapes are rings and forming the set of shapes includes forming a set of rings that are equally and squarely spaced. In another embodiment, causing the copolymer to form the plurality of cylindrical blocks includes forming only one cylindrical block inside each of the rings and only one cylindrical block outside every four (4) squarely neighboring rings.

摘要翻译： 本发明的实施例提供一种形成半导体结构的方法。 该方法包括在衬底的顶部上形成一组形状; 涂覆覆盖基材的共聚物层; 使共聚物在形状内部和外部形成多个圆柱形块; 从所述多个圆柱形块形成接触孔的图案; 并将接触孔的图案转移到衬底以形成半导体结构。 在一个实施例中，形状是环，并且形成一组形状包括形成均匀且平直间隔的一组环。 在另一个实施方案中，使共聚物形成多个圆柱形块包括仅在每个环内形成一个圆柱形块，并且在每四（4）个正方形相邻的环周围仅形成一个圆柱形块。

公开(公告)号：US09316916B2

公开(公告)日：2016-04-19

申请号：US12419403

申请日：2009-04-07

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

IPC分类号： G03F7/207 ,  G03F7/40 ,  G03F7/00 ,  G03F7/20 ,  G03F7/38

CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/2024 ,  G03F7/203 ,  G03F7/2041 ,  G03F7/38

摘要： A method to mitigate resist pattern critical dimension (CD) variation in a double-exposure process generally includes forming a photoresist layer over a substrate; exposing the photoresist layer to a first radiation; developing the photoresist layer to form a first pattern in the photoresist layer; forming a topcoat layer over the photoresist layer; exposing the topcoat layer and the photoresist layer to a second radiation; removing the topcoat layer; and developing the photoresist layer to form a second pattern in the photoresist layer.

摘要翻译： 减轻双曝光工艺中抗蚀剂图案临界尺寸（CD）变化的方法通常包括在衬底上形成光致抗蚀剂层; 将光致抗蚀剂层暴露于第一辐射; 显影光致抗蚀剂层以在光致抗蚀剂层中形成第一图案; 在光致抗蚀剂层上形成顶涂层; 将顶涂层和光致抗蚀剂层暴露于第二辐射; 去除顶涂层; 并且在光致抗蚀剂层中显影光致抗蚀剂层以形成第二图案。