公开(公告)号：US20120156450A1

公开(公告)日：2012-06-21

申请号：US13406965

申请日：2012-02-28

申请人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： B32B3/00

CPC分类号： G03F7/70466 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24802

摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.

摘要翻译： 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

公开(公告)号：US08158014B2

公开(公告)日：2012-04-17

申请号：US12139722

申请日：2008-06-16

申请人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： C03C15/00 ,  H01L21/31

CPC分类号： G03F7/70466 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24802

摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.

摘要翻译： 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外部的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

公开(公告)号：US20090311491A1

公开(公告)日：2009-12-17

申请号：US12139722

申请日：2008-06-16

申请人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

发明人： Wu-Song Huang ,  Wai-kin Li ,  Ping-Chuan Wang

IPC分类号： G03F7/20 ,  B32B5/00

CPC分类号： G03F7/70466 ,  Y10S438/947 ,  Y10S438/948 ,  Y10T428/24802

摘要： A stack of a second photoresist having a second photosensitivity and a first photoresist having a first photosensitivity, which is greater than second photosensitivity, is formed on a substrate. A first pattern is formed in the first photoresist by a first exposure and a first development, while the second photoresist underneath remains intact. A second pattern comprising an array of lines is formed in the second photoresist. An exposed portion of the second photoresist underneath a remaining portion of the first photoresist forms a narrow portion of a line pattern, while an exposed portion of the second photoresist outside the area of the remaining portions of the photoresist forms a wide portion of the line pattern. Each wide portion of the line pattern forms a bulge in the second pattern, which increases overlay tolerance between the second pattern and the pattern of conductive vias.

摘要翻译： 在基板上形成具有第二感光性的第二光致抗蚀剂的叠层和具有大于第二光敏性的第一光敏性的第一光致抗蚀剂。 通过第一曝光和第一显影在第一光致抗蚀剂中形成第一图案，而下面的第二光致抗蚀剂保持完整。 在第二光致抗蚀剂中形成包括线阵列的第二图案。 在第一光致抗蚀剂的剩余部分下面的第二光致抗蚀剂的暴露部分形成线图案的窄部分，而在光致抗蚀剂的剩余部分的区域外部的第二光致抗蚀剂的暴露部分形成线图案的宽部分 。 线图案的每个宽部分在第二图案中形成凸起，这增加了第二图案和导电通孔图案之间的覆盖公差。

公开(公告)号：US08846295B2

公开(公告)日：2014-09-30

申请号：US13457735

申请日：2012-04-27

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： G03F7/038 ,  G03F7/021

CPC分类号： G03F7/0382 ,  G03F7/021 ,  G03F7/0397 ,  G03F7/20 ,  G03F7/325

摘要： The present invention relates to a photoresist composition capable of negative development and a pattern forming method using the photoresist composition. The photoresist composition includes an imaging polymer, a crosslinking agent and a radiation sensitive acid generator. The imaging polymer includes a monomeric unit having an acid-labile moiety-substituted hydroxyl group. The patterning forming method utilizes an organic solvent developer to selectively remove an unexposed region of a photoresist layer of the photoresist composition to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method are especially useful for forming material patterns on a semiconductor substrate using 193 nm (ArF) lithography.

摘要翻译： 本发明涉及能够显影的光致抗蚀剂组合物和使用光致抗蚀剂组合物的图案形成方法。 光致抗蚀剂组合物包括成像聚合物，交联剂和辐射敏感的酸发生剂。 成像聚合物包括具有酸不稳定部分取代的羟基的单体单元。 图案形成方法利用有机溶剂显影剂选择性地除去光致抗蚀剂组合物的光致抗蚀剂层的未曝光区域，以在光致抗蚀剂层中形成图案化结构。 光致抗蚀剂组合物和图案形成方法对于使用193nm（ArF）光刻在半导体衬底上形成材料图案特别有用。

公开(公告)号：US08293451B2

公开(公告)日：2012-10-23

申请号：US12543003

申请日：2009-08-18

申请人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

发明人： Martin Glodde ,  Dario L. Goldfarb ,  Wu-Song Huang ,  Wai-Kin Li ,  Sen Liu ,  Pushkara R. Varanasi ,  Libor Vyklicky

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/028

CPC分类号： G03F7/091 ,  G03F9/7026

摘要： A curable liquid formulation containing at least (i) one or more near-infrared absorbing triphenylamine-based dyes, and (ii) one or more casting solvents. The invention is also directed to solid near-infrared absorbing films composed of crosslinked forms of the curable liquid formulation. The invention is also directed to a microelectronic substrate containing a coating of the solid near-infrared absorbing film as well as a method for patterning a photoresist layer coated on a microelectronic substrate in the case where the near-infrared absorbing film is between the microelectronic substrate and a photoresist film.

摘要翻译： 包含至少（i）一种或多种近红外吸收性三苯胺类染料的可固化液体制剂，和（ii）一种或多种浇铸溶剂。 本发明还涉及由可固化液体制剂的交联形式组成的固体近红外吸收膜。 本发明还涉及一种含有固体近红外线吸收膜的涂层的微电子衬底，以及在近红外吸收膜位于微电子衬底之间的情况下，用于图案化涂覆在微电子衬底上的光刻胶层的方法 和光刻胶膜。

公开(公告)号：US20090155715A1

公开(公告)日：2009-06-18

申请号：US12356187

申请日：2009-01-20

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-Kin Li ,  Pushkara Rao Varanasi ,  Sen Liu

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0045 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/40

摘要： A method and a resist composition. The resist composition includes a polymer having repeating units having a lactone moiety, a thermal base generator capable of generating a base and a photosensitive acid generator. The polymer has the properties of being substantially soluble in a first solvent and becoming substantially insoluble after heating the polymer. The method includes forming a film of a photoresist including a polymer, a thermal base generator capable of releasing a base, a photosensitive acid generator, and a solvent. The film is patternwise imaged. The imaging includes exposing the film to radiation, resulting in producing an acid catalyst. The film is developed in an aqueous base, resulting in removing base-soluble regions and forming a patterned layer. The patterned layer is baked above the temperature, resulting in the thermal base generator releasing a base within the patterned layer and the patterned layer becoming insoluble in the solvent.

摘要翻译： 一种方法和抗蚀剂组合物。 抗蚀剂组合物包括具有内酯部分的重复单元的聚合物，能够产生碱的热碱发生剂和感光酸产生剂。 聚合物具有基本上可溶于第一溶剂的性质，并且在加热聚合物之后变得基本上不溶。 该方法包括形成包含聚合物的光致抗蚀剂膜，能够释放碱的热碱发生器，光敏酸产生剂和溶剂。 该影片被图案化成像。 成像包括将膜暴露于辐射，导致产生酸催化剂。 该膜在水性碱中显影，导致去除碱溶性区域并形成图案层。 图案化层被烘烤高于该温度，导致热基发生器释放图案化层内的基底并且图案化层变得不溶于溶剂。

公开(公告)号：US08395228B2

公开(公告)日：2013-03-12

申请号：US12941375

申请日：2010-11-08

申请人： Wai-Kin Li ,  Wu-Song Huang ,  Dario Leonardo Goldfarb ,  Martin Glodde ,  Edward Engbrecht ,  Yiheng Xu

发明人： Wai-Kin Li ,  Wu-Song Huang ,  Dario Leonardo Goldfarb ,  Martin Glodde ,  Edward Engbrecht ,  Yiheng Xu

IPC分类号： H01L21/02

CPC分类号： H01L21/0332 ,  G03F7/091 ,  G03F7/094 ,  G03F9/7026

摘要： A method of improving the focus leveling response of a semiconductor wafer is described. The method includes combining organic and inorganic or metallic near infrared (NIR) hardmask on a semiconductor substrate; forming an anti-reflective coating (ARC) layer on the combined organic NIR-absorption and the inorganic or metallic NIR-absorption hardmask; and forming a photoresist layer on the ARC layer. A semiconductor structure is also described including a substrate, a resist layer located over the structure; and an absorptive layer located over the substrate. The absorptive layer includes an inorganic or metallic NIR-absorbing hardmask layer.

摘要翻译： 描述了改善半导体晶片的聚焦调平响应的方法。 该方法包括在半导体衬底上组合有机和无机或金属近红外（NIR）硬掩模; 在组合的有机NIR吸收和无机或金属NIR吸收硬掩模上形成抗反射涂层（ARC）层; 以及在所述ARC层上形成光致抗蚀剂层。 还描述了半导体结构，其包括基板，位于结构上方的抗蚀剂层; 以及位于衬底上方的吸收层。 吸收层包括无机或金属NIR吸收硬掩模层。

公开(公告)号：US08268542B2

公开(公告)日：2012-09-18

申请号：US11949190

申请日：2007-12-03

申请人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

发明人： Kuang-Jung Chen ,  Wu-Song Huang ,  Wai-kin Li

IPC分类号： G03F7/26

CPC分类号： G03F7/095

摘要： A method suitable for reducing side lobe printing in a photolithography process is enabled by the use of a barrier layer on top of a photoresist on a substrate. The barrier layer is absorbing at the imaging wavelength of the underlying photoresist and thus blocks the light from reaching the photoresist. A first exposure followed by a development in an aqueous base solution selectively removes a portion of the barrier layer to reveal a section of the underlying photoresist layer. At least a portion of the revealed section of the photoresist layer is then exposed and developed to form a patterned structure in the photoresist layer. The barrier layer can also be bleachable upon exposure and bake in the present invention.

摘要翻译： 通过在基板上的光致抗蚀剂的顶部上使用阻挡层，能够实现在光刻工艺中减少旁瓣印刷的方法。 阻挡层在下面的光致抗蚀剂的成像波长处吸收，从而阻挡光到达光致抗蚀剂。 第一曝光随后在碱性水溶液中显影，选择性地除去阻挡层的一部分以露出下面的光致抗蚀剂层的一部分。 然后将光致抗蚀剂层的显露部分的至少一部分曝光和显影以在光致抗蚀剂层中形成图案化结构。 在本发明中曝光和烘烤时，阻挡层也可以是可漂白的。

公开(公告)号：US08227307B2

公开(公告)日：2012-07-24

申请号：US12490353

申请日：2009-06-24

申请人： Kuang-Jung Chen ,  Ricardo A. Donaton ,  Wu-Song Huang ,  Wai-Kin Li

发明人： Kuang-Jung Chen ,  Ricardo A. Donaton ,  Wu-Song Huang ,  Wai-Kin Li

IPC分类号： H01L21/8238 ,  H01L21/31

CPC分类号： H01L21/31122 ,  H01L21/823842 ,  H01L21/823857

摘要： The present invention provides a method of forming a threshold voltage adjusted gate stack in which an external acid diffusion process is employed for selectively removing a portion of a threshold voltage adjusting layer from one device region of a semiconductor substrate. The external acid diffusion process utilizes an acid polymer which when baked exhibits an increase in acid concentration which can diffuse into an underlying exposed portion of a threshold voltage adjusting layer. The diffused acid reacts with the exposed portion of the threshold voltage adjusting layer providing an acid reacted layer that can be selectively removed as compared to a laterally adjacent portion of the threshold voltage adjusting layer that is not exposed to the diffused acid.

摘要翻译： 本发明提供一种形成阈值电压调节的栅极叠层的方法，其中使用外部酸扩散工艺来从半导体衬底的一个器件区域选择性地去除一部分阈值电压调节层。 外部酸扩散方法使用酸性聚合物，其在烘烤时表现出酸浓度的增加，其可以扩散到阈值电压调节层的下部暴露部分。 扩散的酸与阈值电压调节层的暴露部分反应，提供酸反应层，与不暴露于扩散的酸的阈值电压调节层的横向相邻部分相比，可以选择性地除去酸反应层。

公开(公告)号：US08227180B2

公开(公告)日：2012-07-24

申请号：US13158901

申请日：2011-06-13

申请人： Timothy Allan Brunner ,  Sean David Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

发明人： Timothy Allan Brunner ,  Sean David Burns ,  Kuang-Jung Chen ,  Wu-Song Huang ,  Kafai Lai ,  Wai-Kin Li ,  Bernhard R. Liegl

IPC分类号： G03F7/00 ,  G03F7/028 ,  G03F7/11 ,  G03F7/20 ,  G03F7/40

CPC分类号： G03F7/091 ,  G03F7/70216 ,  Y10S430/127

摘要： An anti-reflective coating material, a microelectronic structure that includes an anti-reflective coating layer formed from the anti-reflective coating material and a related method for exposing a resist layer located over a substrate while using the anti-reflective coating layer provide for attenuation of secondary reflected vertical alignment beam radiation when aligning the substrate including the resist layer located thereover. Such enhanced vertical alignment provides for improved dimensional integrity of a patterned resist layer formed from the resist layer, as well as additional target layers that may be fabricated while using the resist layer as a mask.

摘要翻译： 防反射涂层材料，包括由抗反射涂层材料形成的抗反射涂层的微电子结构和用于在使用抗反射涂层的同时使位于基板上的抗蚀剂层曝光的相关方法提供衰减 当对准包括位于其上的抗蚀剂层的衬底时，二次反射垂直取向束辐射。 这种增强的垂直对准提供了由抗蚀剂层形成的图案化抗蚀剂层的改进的尺寸完整性，以及可以在使用抗蚀剂层作为掩模时制造的附加目标层。