摘要:
A method of semiconductor device fabrication including forming a plurality of gate structures in a first portion of a substrate, wherein the plurality of gate structures have a first height. A first metal gate structure is formed in a second portion of the substrate, the first metal gate structure being surrounded by an isolation region. A plurality of dummy gate structures is formed in the second portion of the substrate. The plurality of dummy gate structures are configured in a ring formation encircling the metal gate structure and the isolation region. The plurality of dummy structures have a top surface that is substantially planar with the plurality of gate structures and covers at least 5% of a pattern density of the second portion of the substrate.
摘要:
A flash storage device for transferring data to and from a host. The flash storage uses a controller to data transfer in the flash storage device, a buffer to temporarily store data for transfer between the host and the flash storage device, a first table for maintaining storage information relating to the flash storage; and a second table for maintaining information relating to the association of virtual sectors to the logical sectors, wherein the controller transfers data between the host and the flash storage and updates the first table and the second table to reflect the transfer of the data. The first table and the second table contain include addressing and status information for a more efficient and improved data transfer.
摘要:
A data storage system using flash storage maintains a status indicator corresponding to data written into the flash storage. The status indictor of the data indicates whether a disruption, such as a power disruption or a device disconnection, occurred when the data was being written into the flash storage. The data storage system determines whether the data may be corrupted based on one or more of the status indictors. The data storage system may make this determination at a selected time or after a power-up of the data storage system. If the data is determined to possibly be corrupted, the data storage system may optionally discard the corrupted data from the flash storage or flag the corrupted data for future removal.
摘要:
A memory and storage device includes a data management system for transferring data units referenced by logical addresses. The data management system maps the logical addresses to sequential virtual addresses according to the order the data units are received. The data management system also maps the sequential virtual addresses to sequential physical addresses in a memory block of a memory device. Additionally, the data management system can modify a data unit in the memory block by copying any other valid data units in the memory block to another memory block and writing the modified data unit into this other memory block. The data management system writes the valid data units and the modified data unit into sequential physical addresses of this other memory block.
摘要:
A manufacturing method of a multi-layer circuit board having a cavity is provided, including the following steps: a core board is provided, and a through hole is formed penetrating the core board; two build-up structures are bonded to two opposite sides of the core board to form the multi-layer circuit board, and the two build-up structures cover the through hole; and a portion of one of the two build-up structures corresponding to the through hole is removed to make the through hole communicate with the outside and form the cavity. A multi-layer circuit board having a cavity, manufactured by the aforementioned method, is also provided.
摘要:
A thermal conductivity substrate including a metal substrate, a metal layer, an insulating layer, a plurality of conductive structures, a first conductive layer and a second conductive layer is provided. The metal layer is disposed on the metal substrate and entirely covers the metal substrate. The insulating layer is disposed on the metal layer. The conductive structures are embedded in the insulating layer and connected to a portion of the metal layer. The first conductive layer is disposed on the insulating layer. The second conductive layer is disposed on the first conductive layer and the conductive structures. The second conductive layer is electrically connected to a portion of the metal layer through the conductive structures. The second conductive layer and the conductive structures are integrally formed.
摘要:
A semiconductor device is provided which includes a semiconductor substrate having a first portion and a second portion, transistors formed in the first portion of the substrate, each transistor having a gate structure with a high-k dielectric and a metal gate, a device element formed in the second portion of the substrate, the device element being isolated by an isolation region, and a polishing stopper formed adjacent the isolation region and having a surface that is substantially planar with a surface of the gate structures of the transistors in the first region.
摘要:
A flash memory configuration and access method having a particular conversion method that uses the page or the sector in each flash memory block instead of the block that is commonly used as the base of the data conversion storage to store data. When data is written into the physical flash block of the flash memory, the original logic sector information can be preserved. The data is written into the same block of the flash memory in a manner according to the sequence as it is received instead of the sequence of the logic sector. Therefore, the block position does not move to refresh the block content until the physical block is full. Consequently, the number of times to move the physical block of the flash memory can be reduced to increase the lifetime of the flash memory. Moreover, since the number of times to erase is reduced, so that the writing speed can speed up to improve the operation efficiency.