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586 条记录 (耗时 0.026 秒)

    METAL RESISTOR, RESISTOR MATERIAL AND METHOD
    23.
    发明申请
    METAL RESISTOR, RESISTOR MATERIAL AND METHOD 有权
    金属电阻器，电阻材料和方法

    公开(公告)号：US20070293000A1

    公开(公告)日：2007-12-20

    申请号：US11420121

    申请日：2006-06-16

    申请人： Chih-Chao Yang ,  Kaushik Chanda ,  Shyng-Tsong Chen

    发明人： Chih-Chao Yang ,  Kaushik Chanda ,  Shyng-Tsong Chen

    IPC分类号： H01L21/338

    CPC分类号： H01L29/86 ,  H01L23/5228 ,  H01L2924/0002 ,  H04W36/08 ,  H04W88/08 ,  H04W88/18 ,  H01L2924/00

    摘要： A metal resistor and resistor material and method of forming the metal resistor are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu) infused with at least one of silicon (Si), nitrogen (N2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W), and aluminum infused with at least one of silicon (Si), nitrogen (N2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W). The method is less complex than conventional processes, allows control of the resistance by the amount of infusion material infused, and is compatible with conventional BEOL processes.

    摘要翻译： 公开了一种金属电阻器和电阻器材料以及形成金属电阻器的方法。 金属电阻器可以包括从由以下组成的组中输入的输入金属：铜（Cu），其输入硅（Si），氮（N 2/2），碳（C），钽（ Ta），钛（Ti）和钨（W），以及输入硅（Si），氮（N 2/2），碳（C），钽（Ta），钛 （Ti）和钨（W）。 该方法比常规方法复杂得多，允许通过灌注材料的量控制电阻，并且与传统的BEOL方法兼容。

    Stress locking layer for reliable metallization
    25.
    发明授权
    Stress locking layer for reliable metallization 失效
    应力锁定层可靠的金属化

    公开(公告)号：US08420537B2

    公开(公告)日：2013-04-16

    申请号：US12127878

    申请日：2008-05-28

    申请人： Kaushik Chanda ,  Ronald G. Filippi ,  Charles C. Goldsmith ,  Ping-Chuan Wang ,  Chih-Chao Yang

    发明人： Kaushik Chanda ,  Ronald G. Filippi ,  Charles C. Goldsmith ,  Ping-Chuan Wang ,  Chih-Chao Yang

    IPC分类号： H01L21/302 ,  B44C1/22

    CPC分类号： H01L21/76877 ,  H01L21/76883

    摘要： Recrystallization and grain growth of metal, such as Cu, is achieved at higher anneal temperatures of 150° C. to 400° C., for example, for short anneal times of five to sixty minutes by forming a metal stress locking layer on the Cu before anneal and chemical-mechanical polishing. The stress locking layer extends the elastic region of the Cu by suppressing atom diffusion to the free surface, resulting in near zero tensile stress at room temperature after anneal. Stress voiding, which creates reliability problems, is thereby avoided. Improved grain size and texture are also achieved. The stress locking layer is removed after anneal by chemical-mechanical polishing leaving the Cu interconnect with low stress and improved grain size and texture.

    摘要翻译： 在150℃至400℃的较高退火温度下实现诸如Cu的金属的重结晶和晶粒生长，例如，通过在Cu上形成金属应力锁定层，例如在短至五至六十分钟的短退火时间 在退火和化学机械抛光之前。 应力锁定层通过将原子扩散抑制到自由表面而延伸Cu的弹性区域，导致退火后在室温下拉伸应力接近零。 从而避免了造成可靠性问题的应力消除。 也实现了改善的晶粒尺寸和纹理。 通过化学机械抛光退火后去除应力锁定层，使Cu互连具有低应力和改善的晶粒尺寸和纹理。

    Semiconductor wiring structures including dielectric cap within metal cap layer
    27.
    发明授权
    Semiconductor wiring structures including dielectric cap within metal cap layer 有权
    包括金属盖层内的电介质盖的半导体布线结构

    公开(公告)号：US07732924B2

    公开(公告)日：2010-06-08

    申请号：US11761495

    申请日：2007-06-12

    申请人： Kaushik Chanda ,  Ronald G. Filippi ,  Ping-Chuan Wang ,  Chih-Chao Yang

    发明人： Kaushik Chanda ,  Ronald G. Filippi ,  Ping-Chuan Wang ,  Chih-Chao Yang

    IPC分类号： H01L23/52

    CPC分类号： H01L23/53238 ,  H01L21/76834 ,  H01L21/76865 ,  H01L23/53223 ,  H01L23/53252 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Semiconductor wiring structures including a dielectric layer having a metal wiring line therein, a via extending downwardly from the metal wiring line, a metal cap layer over the metal wiring line, and a local dielectric cap positioned within a portion of the metal cap layer and in contact with the metal wiring line and a related method are disclosed. The local dielectric cap represents an intentionally created weak point in the metal wiring line of a dual-damascene interconnect, which induces electromigration (EM) voiding in the line, rather than at the bottom of a via extending downwardly from the metal wiring line. Since the critical void size in line fails, especially with metal cap layer (liner) redundancy, is much larger than that in via fails, the EM lifetime can be significantly increased.

    摘要翻译： 包括其中具有金属布线的电介质层，从金属布线向下延伸的孔，在金属布线上方的金属盖层和位于金属盖层的一部分内的局部电介质盖的半导体布线结构 公开了与金属布线的接触和相关方法。 局部电介质盖表示在双镶嵌互连的金属布线中有意创造的弱点，其在管线中引起电迁移（EM）空隙，而不是在从金属布线向下延伸的通孔的底部。 由于线路中的临界空隙尺寸失效，特别是金属盖层（衬垫）冗余度，远远大于通孔失效，所以EM寿命可以显着提高。

    Stress Locking Layer for Reliable Metallization
    29.
    发明申请
    Stress Locking Layer for Reliable Metallization 失效
    应力锁定层可靠金属化

    公开(公告)号：US20090297759A1

    公开(公告)日：2009-12-03

    申请号：US12127878

    申请日：2008-05-28

    申请人： Kaushik Chanda ,  Ronald G. Filippi ,  Charles C. Goldsmith ,  Ping-Chuan Wang ,  Chih-Chao Yang

    发明人： Kaushik Chanda ,  Ronald G. Filippi ,  Charles C. Goldsmith ,  Ping-Chuan Wang ,  Chih-Chao Yang

    IPC分类号： B05D5/12 ,  B32B3/02

    CPC分类号： H01L21/76877 ,  H01L21/76883

    摘要： Recrystallization and grain growth of metal, such as Cu, is achieved at higher anneal temperatures of 150° C. to 400° C., for example, for short anneal times of five to sixty minutes by forming a metal stress locking layer on the Cu before anneal and chemical-mechanical polishing. The stress locking layer extends the elastic region of the Cu by suppressing atom diffusion to the free surface, resulting in near zero tensile stress at room temperature after anneal. Stress voiding, which creates reliability problems, is thereby avoided. Improved grain size and texture are also achieved. The stress locking layer is removed after anneal by chemical-mechanical polishing leaving the Cu interconnect with low stress and improved grain size and texture.

    摘要翻译： 在150℃至400℃的较高退火温度下实现诸如Cu的金属的重结晶和晶粒生长，例如，通过在Cu上形成金属应力锁定层，例如在短至五至六十分钟的短退火时间 在退火和化学机械抛光之前。 应力锁定层通过将原子扩散抑制到自由表面而延伸Cu的弹性区域，导致退火后在室温下拉伸应力接近零。 从而避免了造成可靠性问题的应力消除。 也实现了改善的晶粒尺寸和纹理。 通过化学机械抛光退火后去除应力锁定层，使Cu互连具有低应力和改善的晶粒尺寸和纹理。