公开(公告)号：US08436389B2

公开(公告)日：2013-05-07

申请号：US13482851

申请日：2012-05-29

申请人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

发明人： Kwang Choong Kim ,  Won Cheol Seo ,  Dae Won Kim ,  Dae Sung Kal ,  Kyung Hee Ye

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/18 ,  H01L33/20 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.

摘要翻译： 本发明涉及具有多个非极性发光单元的发光器件及其制造方法。 氮化物半导体层设置在具有上表面的氮化镓衬底上。 上表面是非极性或半极性的晶体，相对于c面形成交叉角。 氮化物半导体层可以被图案化以形成彼此分离的发光单元。 当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。 凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

公开(公告)号：US08341439B2

公开(公告)日：2012-12-25

申请号：US12768511

申请日：2010-04-27

申请人： Sun Wook Kim ,  Dae Won Kim ,  Seong Woon Kim

发明人： Sun Wook Kim ,  Dae Won Kim ,  Seong Woon Kim

IPC分类号： G06F1/18 ,  G06F1/32

CPC分类号： G06F9/5094 ,  Y02D10/22

摘要： A power management apparatus includes: a service request monitor block for receiving service requests by service groups to provide load information of service platforms belonging to the respective service groups; a platform information collection block for collecting a configuration information of the service platforms and collecting load information of the service platforms in a predetermined cycle; a platform power state alteration block for altering power states of the service platforms by request; and a management interface block for providing a setup interface for a load-based and a time-based power control and providing platform profile information generated based on the load information.

摘要翻译： 电力管理装置包括：服务请求监视块，用于接收服务组的服务请求，以提供属于各服务组的服务平台的负载信息; 平台信息收集块，用于收集服务平台的配置信息，并以预定周期收集服务平台的负载信息; 用于通过请求改变服务平台的电源状态的平台电源状态改变块; 以及管理接口块，用于提供用于基于负载和时间的功率控制的设置接口，并提供基于负载信息生成的平台简档信息。

公开(公告)号：US08173459B2

公开(公告)日：2012-05-08

申请号：US12970321

申请日：2010-12-16

申请人： Dae Won Kim ,  Dae Sung Kal

发明人： Dae Won Kim ,  Dae Sung Kal

IPC分类号： H01L33/00

CPC分类号： H01L27/153 ,  H01L33/50 ,  H01L33/62 ,  H01L2224/49107 ,  H01L2224/73265

摘要： Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.

摘要翻译： 公开了一种具有用于将发光元件彼此隔离的隔离绝缘层的发光器件及其制造方法。 发光器件包括衬底和形成在衬底上的多个发光单元。 每个发光单元包括下半导体层，位于下半导体层的一个区域上的上半导体层和插入在下半导体层和上半导体层之间的有源层。 此外，隔离绝缘层填充在多个发光单元之间的区域中，以将发光单元彼此隔离。 此外，布线将发光元件彼此电连接。 每个布线连接一个发光单元的下半导体层和与一个发光单元相邻的另一个发光单元的上半导体层。

公开(公告)号：US07982207B2

公开(公告)日：2011-07-19

申请号：US12942635

申请日：2010-11-09

申请人： Hwa Mok Kim ,  Dae Won Kim ,  Dae Sung Kal

发明人： Hwa Mok Kim ,  Dae Won Kim ,  Dae Sung Kal

IPC分类号： H01L29/06

CPC分类号： H01L33/465 ,  H01L33/105 ,  H01L33/42 ,  H01L33/46

摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

公开(公告)号：US07977691B2

公开(公告)日：2011-07-12

申请号：US12630370

申请日：2009-12-03

申请人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention is provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

摘要翻译： 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

公开(公告)号：US07951626B2

公开(公告)日：2011-05-31

申请号：US12613275

申请日：2009-11-05

申请人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

发明人： Jong Lam Lee ,  Jae Ho Lee ,  Yeo Jin Yoon ,  Eu Jin Hwang ,  Dae Won Kim

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  H01L27/153 ,  H01L27/3281 ,  H01L33/08 ,  H01L33/20 ,  H01L33/24 ,  H01L33/28 ,  H01L33/32 ,  H01L33/385 ,  H01L33/44 ,  H01L33/62 ,  H01L51/5253 ,  H01L2224/45144 ,  H01L2224/48095 ,  H01L2224/48137 ,  H01L2933/0066 ,  H01L2924/00

摘要： The present invention relates to a light emitting device and a method of manufacturing the light emitting device. According to the present invention, the light emitting device comprises a substrate, an N-type semiconductor layer formed on the substrate, and a P-type semiconductor layer formed on the N-type semiconductor layer, wherein a side surface including the N-type or P-type semiconductor layer has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a light emitting device comprising a substrate formed with a plurality of light emitting cells each including an N-type semiconductor layer and a P-type semiconductor layer formed on the N-type semiconductor layer, and a submount substrate flip-chip bonded onto the substrate, wherein the N-type semiconductor layer of one light emitting cell and the P-type semiconductor layer of another adjacent light emitting cell are connected to each other, and a side surface including at least the P-type semiconductor layer of the light emitting cell has a slope of 20 to 80° from a horizontal plane. Further, the present invention provides a method of manufacturing the light emitting device. Accordingly, there is an advantage in that the characteristics of a light emitting device such as luminous efficiency, external quantum efficiency and extraction efficiency are enhanced and the reliability is secured such that light with high luminous intensity and brightness can be emitted.

摘要翻译： 本发明涉及一种发光器件及其制造方法。 根据本发明，发光器件包括衬底，形成在衬底上的N型半导体层和形成在N型半导体层上的P型半导体层，其中包括N型半导体层的侧表面 或P型半导体层的水平面为20〜80°的斜率。 此外，本发明提供了一种发光器件，其包括形成有多个发光单元的衬底，每个发光单元包括形成在N型半导体层上的N型半导体层和P型半导体层，以及基座衬底翻转 芯片接合到基板上，其中一个发光单元的N型半导体层和另一个相邻的发光单元的P型半导体层彼此连接，并且至少包括P型半导体 发光单元的层与水平面的倾斜度为20〜80°。 此外，本发明提供一种制造发光器件的方法。 因此，具有发光效率，外部量子效率，提取效率等发光装置的特性得到提高，可靠性得到确保，能够发出高发光强度和亮度的光的优点。

公开(公告)号：US20110119514A1

公开(公告)日：2011-05-19

申请号：US12649241

申请日：2009-12-29

申请人： Dae Won Kim ,  Sun Wook Kim ,  Won-Ok Kwon ,  Seong Woon Kim

发明人： Dae Won Kim ,  Sun Wook Kim ,  Won-Ok Kwon ,  Seong Woon Kim

IPC分类号： G06F11/30 ,  G06F1/00 ,  G06F15/173

CPC分类号： G06F1/3203 ,  G06F1/263 ,  G06F1/30

摘要： A power control apparatus for a cluster system, includes a cluster including a plurality of nodes, each equipped with a battery; and a power control unit connected to the cluster over a network and configured to monitor power management information and performance information of the cluster and to set a power capping threshold based on the monitored power management information and performance information of the cluster. Accordingly, the power control unit enables power of the cluster to be limited by turning on and off the batteries when power of the cluster system increases up to the power capping threshold.

摘要翻译： 一种用于集群系统的电力控制装置，包括：包括多个节点的集群，每个节点配备有电池; 以及电力控制单元，其通过网络连接到所述集群，并且被配置为监视所述集群的电力管理信息和性能信息，并且基于所监视的功率管理信息和所述集群的性能信息来设置功率上限阈值。 因此，功率控制单元能够通过在集群系统的功率增加到功率上限阈值时打开和关闭电池来限制集群的电力。

公开(公告)号：US07846755B2

公开(公告)日：2010-12-07

申请号：US12633603

申请日：2009-12-08

申请人： Dae Sung Kal ,  Dae Won Kim ,  Won Cheol Seo ,  Kyung Hee Ye ,  Joo Woong Lee

发明人： Dae Sung Kal ,  Dae Won Kim ,  Won Cheol Seo ,  Kyung Hee Ye ,  Joo Woong Lee

IPC分类号： H01L29/18

CPC分类号： H01L27/153 ,  H01L24/24 ,  H01L33/44 ,  H01L33/507 ,  H01L33/62 ,  H01L2224/24137 ,  H01L2924/12041 ,  H01L2924/00

摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.

摘要翻译： 本发明公开了一种发光二极管。 发光二极管包括布置在基板上的多个发光单元，每个发光单元包括布置在第一半导体层上的第一半导体层和第二半导体层; 布置在每个发光单元上并且包括用于暴露第一半导体层的第一开口和暴露第二半导体层的第二开口的第一电介质层; 布置在所述第一介电层上以连接两个所述发光单元的导线; 以及布置在第一介电层和导线上的第二电介质层。 第一电介质层和第二电介质层包含相同的材料，第一电介质层比第二电介质层厚。

公开(公告)号：US07700960B2

公开(公告)日：2010-04-20

申请号：US12605146

申请日：2009-10-23

申请人： Dae Won Kim ,  Yeo Jin Yoon ,  Duck Hwan Oh ,  Jong Hwan Kim

发明人： Dae Won Kim ,  Yeo Jin Yoon ,  Duck Hwan Oh ,  Jong Hwan Kim

IPC分类号： H01L33/00 ,  H01L27/15

CPC分类号： H01L33/42 ,  H01L27/153 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.

摘要翻译： 本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。 根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。 本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

公开(公告)号：US20100072905A1

公开(公告)日：2010-03-25

申请号：US12442800

申请日：2007-09-05

申请人： Dae Won Kim ,  Dae Sung Kal

发明人： Dae Won Kim ,  Dae Sung Kal

IPC分类号： H05B37/00

CPC分类号： H05B33/0821 ,  H01L27/153 ,  H01L2224/24137 ,  H01L2224/48137 ,  H01L2224/49107

摘要： An AC light emitting device is disclosed. The AC light emitting device includes at least four substrates. Serial arrays each of which has a plurality of light emitting cells connected in series are positioned on the substrates, respectively. Meanwhile, first connector means electrically connect the serial arrays formed on respective different substrates. At least two array groups each of which has at least two of the serial arrays connected in series by the first connector means are formed. The at least two array groups are connected in reverse parallel to operate. Accordingly, there is provided an AC light emitting device capable of being driven under an AC power source.

摘要翻译： 公开了一种AC发光器件。 交流发光装置包括至少四个基板。 串联阵列中的每一个具有串联连接的多个发光单元分别位于基板上。 同时，第一连接器装置电连接形成在各个不同基板上的串联阵列。 形成至少两个阵列组，每个阵列组具有由第一连接器装置串联连接的至少两个串行阵列。 至少两个阵列组反向并联连接以进行操作。 因此，提供了能够在AC电源下驱动的AC发光装置。