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    Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface
    21.
    发明授权
    Current perpendicular to plane magnetoresistance read head design using a current confinement structure proximal to an air bearing surface 有权
    电流垂直于平面磁阻读头设计，使用靠近空气轴承表面的电流限制结构

    公开(公告)号：US08098463B2

    公开(公告)日：2012-01-17

    申请号：US12182701

    申请日：2008-07-30

    申请人： Hardayal S. Gill ,  Werner J. Douglas ,  Wipul P. Jayasekara ,  Wen-Chien Hsiao

    发明人： Hardayal S. Gill ,  Werner J. Douglas ,  Wipul P. Jayasekara ,  Wen-Chien Hsiao

    IPC分类号： G11B5/31

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/398

    摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.

    摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。

    Process for fabricating a magnetic recording head with a laminated write gap
    22.
    发明授权
    Process for fabricating a magnetic recording head with a laminated write gap 失效
    用于制造具有层压写入间隙的磁记录头的工艺

    公开(公告)号：US07500302B2

    公开(公告)日：2009-03-10

    申请号：US11104212

    申请日：2005-04-11

    申请人： Wen-Chien Hsiao ,  Terence Lam ,  Yinshi Liu ,  Michael Yang ,  Samuel Yuan

    发明人： Wen-Chien Hsiao ,  Terence Lam ,  Yinshi Liu ,  Michael Yang ,  Samuel Yuan

    IPC分类号： G11B5/127 ,  H04R31/00

    CPC分类号： G11B5/3116 ,  G11B5/23 ,  G11B5/3163 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： Embodiments of the present invention recite a process for fabricating a write gap structure for a magnetic recording head. In one embodiment, at least one layer of inert material is deposited which is disposed proximate to the P2 pole of a magnetic recording head. A layer of magnetic material is deposited which is disposed between the layer of inert material and the P1 pedestal (P1P) of the magnetic recording head. In embodiments of the present invention, a second layer of inert material is deposited which is disposed between the layer of magnetic material and the P1P of the magnetic recording head. In embodiments of the present invention, the throat height of the write gap structure is defined wherein the layer of magnetic material and the inert layer only overlie a portion of the P1 pedestal of the magnetic recording head.

    摘要翻译： 本发明的实施例背诵了一种用于制造用于磁记录头的写间隙结构的方法。 在一个实施例中，沉积至少一层惰性材料，其被布置成靠近磁记录头的P2极。 沉积磁性材料层，其设置在惰性材料层与磁记录头的P1基座（P1P）之间。 在本发明的实施例中，沉积第二层惰性材料，该层被设置在磁性材料层和磁记录头的P1P之间。 在本发明的实施例中，限定了写入间隙结构的喉部高度，其中磁性材料层和惰性层仅覆盖在磁记录头的P1基座的一部分上。

    CURRENT PERPENDICULAR TO PLANE DIFFERENTIAL MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE
    27.
    发明申请
    CURRENT PERPENDICULAR TO PLANE DIFFERENTIAL MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权
    当前对平面磁阻的平均读取头设计使用当前的约束结构接近空中轴承表面

    公开(公告)号：US20100053818A1

    公开(公告)日：2010-03-04

    申请号：US12202675

    申请日：2008-09-02

    申请人： Hardayal S. Gill ,  Douglas J. Werner ,  Wen-Chien Hsiao ,  Wipul P. Jayasekara

    发明人： Hardayal S. Gill ,  Douglas J. Werner ,  Wen-Chien Hsiao ,  Wipul P. Jayasekara

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996

    摘要： A current to perpendicular to plane (CPP) differential magnetoresistance (DMR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. The CPP DMR read head includes a first electrically conductive lead, a first MR sensor formed on the first lead, and a non-magnetic electrically conductive spacer formed on the first MR sensor proximate to the ABS. The CPP DMR read head further includes insulating material on the first MR sensor distal to the ABS. A second MR sensor is formed in contact with the conductive spacer such that the second MR sensor is in electrical contact with the first MR sensor proximate to the ABS and is electrically isolated from the first MR sensor distal to the ABS. A second electrically conductive lead is in contact with the second MR sensor. Sense current injected into the first and the second MR sensor is confined proximate to the ABS.

    摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制垂直于平面（CPP）差分磁阻（DMR）读头的电流。 CPP DMR读取头包括第一导电引线，形成在第一引线上的第一MR传感器和形成在靠近ABS的第一MR传感器上的非磁性导电间隔物。 CPP DMR读取头还包括远离ABS的第一MR传感器上的绝缘材料。 第二MR传感器形成为与导电间隔物接触，使得第二MR传感器与靠近ABS的第一MR传感器电接触，并且与远离ABS的第一MR传感器电隔离。 第二导电引线与第二MR传感器接触。 注入第一和第二MR传感器的感应电流被限制在接近ABS的位置。

    CURRENT PERPENDICULAR TO PLANE MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE
    28.
    发明申请
    CURRENT PERPENDICULAR TO PLANE MAGNETORESISTANCE READ HEAD DESIGN USING A CURRENT CONFINEMENT STRUCTURE PROXIMAL TO AN AIR BEARING SURFACE 有权
    当前对平面磁阻的正确读取头设计使用当前的约束结构接近空中轴承表面

    公开(公告)号：US20100027167A1

    公开(公告)日：2010-02-04

    申请号：US12182701

    申请日：2008-07-30

    申请人： Hardayal S. Gill ,  Werner J. Douglas ,  Wipul P. Jayasekara ,  Wen-Chien Hsiao

    发明人： Hardayal S. Gill ,  Werner J. Douglas ,  Wipul P. Jayasekara ,  Wen-Chien Hsiao

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3912 ,  G11B5/3929 ,  G11B5/398

    摘要： A current to perpendicular to plane (CPP) magnetoresistance (MR) read head using current confinement proximal to an air bearing surface (ABS) is disclosed. A CPP MR read head includes a first shield, an MR sensor formed on the first shield, and a second shield contacting the MR sensor proximal to an ABS. The CPP MR read head further includes insulating material between the MR sensor and the second shield, where the insulating material is distal to the ABS to electrically isolate the MR sensor from the second shield distal to the ABS. Sense current injected from the second shield through the MR sensor and into the first shield is confined proximal to the ABS at a location where the second shield contacts the MR sensor.

    摘要翻译： 公开了使用靠近空气轴承表面（ABS）的电流限制来垂直于平面（CPP）磁阻（MR）读取头的电流。 CPP MR读取头包括形成在第一屏蔽上的第一屏蔽，MR传感器和接近ABS的MR传感器的第二屏蔽。 CPP MR读取头还包括在MR传感器和第二屏蔽之间的绝缘材料，其中绝缘材料位于ABS的远侧，以将MR传感器与远离ABS的第二屏蔽电隔离。 从第二屏蔽件通过MR传感器注入并进入第一屏蔽层的感应电流在第二屏蔽件接触MR传感器的位置处被限制在ABS附近。

    SHIELD FABRICATION OF MAGNETIC WRITE HEADS
    29.
    发明申请
    SHIELD FABRICATION OF MAGNETIC WRITE HEADS 有权
    磁性写头的屏蔽制作

    公开(公告)号：US20080313885A1

    公开(公告)日：2008-12-25

    申请号：US11767330

    申请日：2007-06-22

    申请人： Wen-Chien Hsiao ,  Yimin Hsu ,  Vladimir Nikitin

    发明人： Wen-Chien Hsiao ,  Yimin Hsu ,  Vladimir Nikitin

    IPC分类号： G11B5/10 ,  G11B5/33

    CPC分类号： G11B5/11 ,  G11B33/1493 ,  Y10T29/49021 ,  Y10T29/49028 ,  Y10T29/49032 ,  Y10T29/49043 ,  Y10T29/49155 ,  Y10T29/49165

    摘要： Methods are provided for fabricating a write head with a self aligned wrap around shield and a self aligned flared region of a write pole. A flare point and a track width of a write pole may be fabricated using multiple processes. The multiple processes utilize several masking structures to define the track width and the flare point of the write pole. A mask structure is formed to cover a first portion of the write pole. An edge of the mask structure adjacent to an exposed second portion of the write pole defines a flare point of the write pole. Various structures of the write head, including shield gap layers, a wrap around shield and a flared region (e.g., the yoke) of the write pole may be fabricated from the flare point defined by the mask structure.

    摘要翻译： 提供了用于制造具有围绕屏蔽件的自对准包裹和写入极的自对准扩口区域的写入头的方法。 可以使用多个工艺来制造写极点的闪点和轨道宽度。 多个过程利用几个掩模结构来定义磁道宽度和写入磁极的扩展点。 形成掩模结构以覆盖写入极的第一部分。 掩模结构的与写入极的暴露的第二部分相邻的边缘限定了写入极的扩张点。 写磁头的各种结构，包括屏蔽间隙层，环绕屏蔽层和写磁极的扩口区域（例如磁轭）可以由掩模结构限定的扩口来制造。