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    REMOTE DELIVERY OF CHEMICAL REAGENTS
    25.
    发明申请
    REMOTE DELIVERY OF CHEMICAL REAGENTS 审中-公开
    远程输送化学试剂

    公开(公告)号：US20160172164A1

    公开(公告)日：2016-06-16

    申请号：US14906537

    申请日：2014-07-21

    申请人： Entegris, Inc.

    发明人： Joseph D. Sweeney ,  Edward E. Jones ,  Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Steven E. Bishop

    IPC分类号： H01J37/32

    CPC分类号： H01J37/32449 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/24564 ,  H01J2237/3365

    摘要： Fluid storage and dispensing systems and methods for remote delivery of fluids are described, for providing fluid from a source vessel at lower voltage to one or more fluid-utilizing tools at higher voltage, so that the fluid crosses the associated voltage gap without arcing, discharge, premature ionization, or other anomalous behavior, and so that when multiple fluid-utilizing tools are supplied by the remote source vessel, fluid is efficiently supplied to each of the multiple tools at suitable pressure level during the independent operation of others of the multiple vessels.

    摘要翻译： 描述用于远程输送流体的流体存储和分配系统和方法，用于将来自较低电压的源容器的流体提供给在较高电压下的一个或多个流体利用工具，使得流体跨过相关联的电压间隙而没有电弧，放电 过早电离或其他异常行为，并且当多个流体利用工具由远程源容器供应时，在多个容器的其他人的独立操作期间，以适当的压力水平将流体有效地供给到多个工具中的每一个 。

    Ion implantation system with mixture of arc chamber materials
    26.
    发明授权
    Ion implantation system with mixture of arc chamber materials 有权

    公开(公告)号：US11682540B2

    公开(公告)日：2023-06-20

    申请号：US17466362

    申请日：2021-09-03

    申请人： Entegris, Inc.

    发明人： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

    IPC分类号： H01J37/317 ,  H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/08

    摘要： A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.

    VESSELS AND METHODS FOR STORING AND DELIVERY A REAGENT
    28.
    发明申请
    VESSELS AND METHODS FOR STORING AND DELIVERY A REAGENT 有权

    公开(公告)号：US20220349528A1

    公开(公告)日：2022-11-03

    申请号：US17732446

    申请日：2022-04-28

    申请人： ENTEGRIS, INC.

    发明人： Oleg Byl ,  Douglas Edwards ,  Jessica Verbisky

    IPC分类号： F17C13/04 ,  F17C13/02

    摘要： A storage vessel to contain reagent material. The storage vessel includes a vessel with a bottom, a top, an outlet at the top, sidewalls extending from the bottom to the top, a valve at the outlet, and an interior defined by the bottom, the top, and the sidewalls, the interior including a volume, and an extension tube having a first end engaged with the valve and a second end located toward a center of the interior volume from the first end such that, regardless of orientation of the vessel, the second end is above at least 25 percent of a volume of the interior volume.

    Germanium tetraflouride and hydrogen mixtures for an ion implantation system
    29.
    发明授权
    Germanium tetraflouride and hydrogen mixtures for an ion implantation system 有权

    公开(公告)号：US11299802B2

    公开(公告)日：2022-04-12

    申请号：US17055885

    申请日：2019-03-15

    申请人： ENTEGRIS, INC.

    发明人： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph Sweeney ,  Sharad N. Yedave

    IPC分类号： C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

    摘要： The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during an ion implantation procedure.

    Ion implantation system with mixture of arc chamber materials
    30.
    发明授权
    Ion implantation system with mixture of arc chamber materials 有权

    公开(公告)号：US11139145B2

    公开(公告)日：2021-10-05

    申请号：US16904286

    申请日：2020-06-17

    申请人： ENTEGRIS, INC.

    发明人： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Oleg Byl

    IPC分类号： H01J37/317 ,  H01J37/08

    摘要： A system and method for ion implantation is described, which includes a gas or gas mixture including at least one ionizable gas used to generate ionic species and an arc chamber that includes two or more different arc chamber materials. Using the system ionic species are generated in the arc chamber with liner combination, and one or more desired ionic species display a higher beam current among the ionic species generated, which is facilitated by use of the different materials. In turn improved implantation of the desired ionic species into a substrate can be achieved. Further, the system can minimize formation of metal deposits during system operation, thereby extending source life and promoting improved system performance.