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    PHOTOELECTRIC CONVERSION ELEMENT, DYE-SENSITIZED SOLAR CELL, METAL COMPLEX DYE, AND DYE SOLUTION
    22.
    发明申请
    PHOTOELECTRIC CONVERSION ELEMENT, DYE-SENSITIZED SOLAR CELL, METAL COMPLEX DYE, AND DYE SOLUTION 审中-公开

    公开(公告)号：US20170092434A1

    公开(公告)日：2017-03-30

    申请号：US15372471

    申请日：2016-12-08

    Applicant: FUJIFILM Corporation

    Inventor： Kazuhiro TSUNA ,  Kousuke WATANABE ,  Hiroki SUGIURA ,  Tomoaki YOSHIOKA ,  Toshihiro ISE

    IPC: H01G9/20 ,  C07F15/00 ,  H01L51/00 ,  C09B57/10

    CPC classification number: H01G9/2059 ,  C07F15/0053 ,  C09B23/105 ,  C09B57/10 ,  H01G9/2018 ,  H01G9/2022 ,  H01G9/2027 ,  H01L51/0086 ,  Y02E10/542

    Abstract: A photoelectric conversion element having an electrically conductive support, a photoconductor layer including an electrolyte, a charge transfer layer including an electrolyte, and a counter electrode, in which the photoconductor layer has semiconductor fine particles carrying a metal complex dye represented by the following Formula (1), and a dye-sensitized solar cell; and a metal complex dye and a dye solution, each of which is used in the photoelectric conversion element and the dye-sensitized solar cell, ML1L2(X)n1.CImY  Formula (1) in the formula, M represents a metal ion, L1 represents a tridentate ligand having a group LV represented by the following Formula (LV-1) or (LV-2); L2 represents a bidentate or tridentate ligand including at least one of aromatic ring groups having a specific sp2 carbon atom to which a substituent is bonded; X represents a monodentate ligand; n1 represents 0 or 1; CI represents a required counterion; and mY represents an integer of 0 to 3, —RV1═RV2—RV31  Formula (LV-1) —C≡C—RV32  Formula (LV-2) in the formulae, RV1 and RV2 each independently represent a nitrogen atom or CRV4, RV4 represents a hydrogen atom or a substituent, RV31 represents a fused polycyclic aromatic ring group or a fused polycyclic heterocyclic group, and RV32 represents a fused polycyclic aromatic ring group or a heteroaryl group.

    ORGANIC SEMICONDUCTOR POLYMER, COMPOSITION FOR ORGANIC SEMICONDUCTOR MATERIAL, AND PHOTOVOLTAIC CELL
    23.
    发明申请
    ORGANIC SEMICONDUCTOR POLYMER, COMPOSITION FOR ORGANIC SEMICONDUCTOR MATERIAL, AND PHOTOVOLTAIC CELL 有权
    有机半导体聚合物，有机半导体材料的组成和光伏电池

    公开(公告)号：US20140021456A1

    公开(公告)日：2014-01-23

    申请号：US14034641

    申请日：2013-09-24

    Applicant: FUJIFILM Corporation

    Inventor： Yoshihiro NAKAI ,  Hiroki SUGIURA ,  Kiyoshi TAKEUCHI

    IPC: H01L51/00

    CPC classification number: H01L51/0043 ,  C08G61/123 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/145 ,  C08G2261/1452 ,  C08G2261/3241 ,  C08G2261/3243 ,  C08G2261/3246 ,  C08G2261/414 ,  C08G2261/91 ,  H01L51/0036 ,  H01L51/0037 ,  H01L51/4253 ,  Y02E10/549

    Abstract: An organic semiconductor polymer comprising a structural unit represented by the following Formula (I), a composition for organic semiconductor material, a photovoltaic cell and a polymer. wherein Z1 and Z2 each independently represent S, O, Se or Te; R represents —SOpX, —CN, —NO2, —P(═O)(OR1)(OR2) or —C(R1′)═C(CN)2; X represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aromatic heterocyclic group or —NR3(R4); R1, R2, R1, R3 and R4 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aromatic heterocyclic group; R3 and R4 may bond with each other to form a ring; and p represents 1 or 2.

    Abstract translation: 包含由下式（I）表示的结构单元，有机半导体材料组合物，光伏电池和聚合物的有机半导体聚合物。 其中Z1和Z2各自独立地表示S，O，Se或Te; R表示-SOpX，-CN，-NO 2，-P（= O）（OR 1）（OR 2）或-C（R 1'）= C（CN）2; X表示氢原子，烷基，环烷基，芳基，芳族杂环基或-NR 3（R 4）; R 1，R 2，R 1，R 3和R 4各自独立地表示氢原子，烷基，环烷基，芳基或芳族杂环基; R3和R4可以彼此键合形成环; p表示1或2。

    ORGANIC THIN FILM TRANSISTOR, POLYMER, COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND
    26.
    发明申请
    ORGANIC THIN FILM TRANSISTOR, POLYMER, COMPOSITION, ORGANIC SEMICONDUCTOR FILM, AND COMPOUND 有权

    公开(公告)号：US20220238809A1

    公开(公告)日：2022-07-28

    申请号：US17715080

    申请日：2022-04-07

    Applicant: FUJIFILM Corporation

    Inventor： Hiroki SUGIURA ,  Toshihiro ISE

    IPC: H01L51/00 ,  H01L51/05

    Abstract: An object of the present invention is to provide an organic thin film transistor having excellent atmospheric stability. Another object of the present invention is to provide a polymer, a composition, an organic semiconductor film, and a compound.
    The organic thin film transistor of the present invention has an organic semiconductor film which includes a polymer having a partial structure represented by Formula (1). In Formula (1), X1 represents a sulfur atom or a selenium atom, X2 to X4 each independently represent a sulfur atom, an oxygen atom, or a selenium atom, Y1 to Y4 each independently represent a group represented by —CR1═ or a nitrogen atom, where at least one of Y1 to Y4 represents a nitrogen atom, R1 represents a hydrogen atom or a substituent, and * represents a bonding position.

    THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE
    27.
    发明申请
    THERMOELECTRIC CONVERSION ELEMENT AND THERMOELECTRIC CONVERSION MODULE 审中-公开

    公开(公告)号：US20170179363A1

    公开(公告)日：2017-06-22

    申请号：US15451786

    申请日：2017-03-07

    Applicant: FUJIFILM Corporation

    Inventor： Naoyuki HAYASHI ,  Hiroki SUGIURA ,  Toshiaki AOAI

    IPC: H01L35/24 ,  H01L35/32 ,  H01L35/02 ,  H01L35/30

    CPC classification number: H01L35/24 ,  B82Y30/00 ,  C01B32/158 ,  C01B2202/22 ,  C01B2202/24 ,  H01L35/02 ,  H01L35/30 ,  H01L35/32 ,  H01L35/34 ,  Y10S977/742 ,  Y10S977/753 ,  Y10S977/948

    Abstract: The present invention has a first substrate having a high thermal conduction portion which has a thermal conductivity higher than that of other regions in a plane direction, a thermoelectric conversion layer which is formed on the first substrate, consists of an organic material, and has a thermoelectric conversion material having a positive Seebeck coefficient, a second substrate which is formed on the thermoelectric conversion layer and has a high thermal conduction portion having a thermal conductivity higher than that of other regions in the plane direction and in which the high thermal conduction portion does not completely overlap the high thermal conduction portion of the first substrate in the plane direction, and a pair of electrodes which are connected to the thermoelectric conversion layer and consist of a metal material having a negative Seebeck coefficient. As a result, there are provided a thermoelectric conversion element and a thermoelectric conversion module which can generate heat with excellent efficiency by using a thermoelectric conversion material consisting of an organic material.

    ORGANIC FILM TRANSISTOR, ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR MATERIAL AND APPLICATION OF THESE
    30.
    发明申请
    ORGANIC FILM TRANSISTOR, ORGANIC SEMICONDUCTOR FILM, ORGANIC SEMICONDUCTOR MATERIAL AND APPLICATION OF THESE 有权
    有机薄膜晶体管，有机半导体薄膜，有机半导体材料及其应用

    公开(公告)号：US20160126459A1

    公开(公告)日：2016-05-05

    申请号：US14993371

    申请日：2016-01-12

    Applicant: FUJIFILM Corporation

    Inventor： Koji TAKAKU ,  Akihiro KANEKO ,  Hiroki SUGIURA ,  Kensuke MASUI ,  Yasunori YONEKUTA ,  Yuki HIRAI ,  Masashi KOYANAGI

    IPC: H01L51/00 ,  C07C49/697 ,  C08G61/12

    CPC classification number: H01L51/0036 ,  C07C49/697 ,  C07C2603/10 ,  C08G61/02 ,  C08G61/12 ,  C08G61/126 ,  C08G2261/1412 ,  C08G2261/148 ,  C08G2261/149 ,  C08G2261/18 ,  C08G2261/314 ,  C08G2261/3142 ,  C08G2261/3223 ,  C08G2261/3241 ,  C08G2261/3242 ,  C08G2261/332 ,  C08G2261/3325 ,  C08G2261/342 ,  C08G2261/344 ,  C08G2261/364 ,  C08G2261/414 ,  C08G2261/92 ,  H01L51/0007 ,  H01L51/0043 ,  H01L51/0545 ,  H01L51/0558

    Abstract: An organic film transistor containing a compound, which is composed of n repeating units represented by Formula (1-1), (1-2), or (101), in a semiconductor active layer is an organic film transistor using a compound that results in high carrier mobility when being used in the semiconductor active layer of the organic film transistor and exhibits high solubility in an organic solvent. (Each of R1 and R2 represents a hydrogen atom or a substituent; each of Ar1 and Ar2 independently represents a heteroarylene group or an arylene group; V1 represents a divalent linking group; m represents an integer of 0 to 6; cy represents a naphthalene ring or an anthracene ring; each of R3 and R4 represents a hydrogen atom or a substituent; each of Ar3 and Ar4 represents a heterocyclic aromatic ring or an aromatic ring; V2 represents a divalent linking group; p represents an integer of 0 to 6; n represents an integer of equal to or greater than 2; A is a divalent linking group represented by Formula (101′); each of RA1 to RA6 represents a hydrogen atom, a substituent, or a direct bond with Ar101 or Ar102 in Formula (101); and among the groups represented by RA1 to RA6, two different groups are direct bonds with Ar101 and Ar102 in Formula (101) respectively.)

    Abstract translation: 在半导体有源层中含有由式（1-1），（1-2）或（101）表示的n个重复单元构成的化合物的有机薄膜晶体管是使用结果的化合物的有机薄膜晶体管 当在有机薄膜晶体管的半导体有源层中使用时具有高载流子迁移率，并且在有机溶剂中表现出高溶解度。 （R 1和R 2各自表示氢原子或取代基; Ar 1和Ar 2各自独立地表示亚杂芳基或亚芳基; V1表示二价连接基团; m表示0〜6的整数; cy表示萘环 或蒽环; R 3和R 4各自表示氢原子或取代基; Ar 3和Ar 4各自表示杂环芳香环或芳香环; V2表示二价连接基团; p表示0〜6的整数; n 表示等于或大于2的整数; A是由式（101'）表示的二价连接基团; RA 1至RA 6各自表示氢原子，取代基或与式（101）中的Ar 101或Ar 102直接结合 ）;在由RA1〜RA6表示的基团中，两个不同的基团分别是式（101）中的Ar 101和Ar 102的直接键。

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