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    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND RESIST FILM USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THESE
    21.
    发明申请
    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMING METHOD AND RESIST FILM USING THE COMPOSITION, AND ELECTRONIC DEVICE MANUFACTURING METHOD AND ELECTRONIC DEVICE USING THESE 有权
    丙烯酸类敏感性或辐射敏感性树脂组合物，使用该组合物的图案形成方法和耐腐蚀膜，以及使用这些的电子设备制造方法和电子设备

    公开(公告)号：US20140349221A1

    公开(公告)日：2014-11-27

    申请号：US14458660

    申请日：2014-08-13

    Applicant: FUJIFILM CORPORATION

    Inventor： Hiroo TAKIZAWA ,  Tomotaka TSUCHIMURA

    IPC: G03F7/027 ,  G03F7/038

    CPC classification number: G03F7/027 ,  G03F7/004 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0382 ,  G03F7/039 ,  G03F7/0397

    Abstract: There is provided an actinic ray-sensitive or radiation-sensitive resin composition containing a compound capable of generating an acid upon irradiation with an actinic ray or radiation, represented by the formula (Z1), and the formula (Z1) is defined as herein, and a resist film formed using the actinic ray-sensitive or radiation-sensitive resin composition, a pattern forming method comprising a step of forming a film by using the actinic ray-sensitive or radiation-sensitive resin composition, a step of exposing the film, and a step of developing the exposed film, a method for manufacturing an electronic device, comprising the pattern forming method, and an electronic device manufactured by the method for manufacturing an electronic device.

    Abstract translation: 提供了由式（Z1）表示的光化射线或辐射的光化学射线敏感性或辐射敏感性树脂组合物，其含有能够在用光化学射线或辐射照射时产生酸的化合物，并且式（Z1）如本文所定义， 以及使用光化射线敏感性或辐射敏感性树脂组合物形成的抗蚀剂膜，图案形成方法包括通过使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤，使所述膜曝光的步骤， 以及显影曝光膜的步骤，包括图案形成方法的电子设备的制造方法以及通过该电子设备的制造方法制造的电子设备。

    ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN
    22.
    发明申请
    ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN 有权
    抗紫外线或辐射敏感性树脂组合物，阴离子或辐射敏感膜，掩模层和形成图案的方法

    公开(公告)号：US20140242502A1

    公开(公告)日：2014-08-28

    申请号：US14274009

    申请日：2014-05-09

    Applicant: FUJIFILM Corporation

    Inventor： Tomotaka TSUCHIMURA ,  Hiroo TAKIZAWA

    IPC: G03F7/20 ,  G03F7/004 ,  G03F1/24

    CPC classification number: G03F7/2002 ,  C08F12/22 ,  C08F12/26 ,  C08F212/14 ,  C08F212/32 ,  G03F1/24 ,  G03F7/004 ,  G03F7/0382 ,  C08F212/08 ,  C08F220/32 ,  C08F220/36

    Abstract: According to one embodiment, an actinic-ray- or radiation-sensitive resin composition includes a compound (A) that contains a structure (P) containing at least one phenolic hydroxyl group and a structure (Q) containing at least one phenolic hydroxyl group whose hydrogen atom is replaced by a group (S) with a cyclic structure containing an acid crosslinking group, characterized in that the group (S) with a cyclic structure containing an acid crosslinking group is a group with a polycyclic structure or a group with a cyclic structure containing a hydroxymethyl group and/or an alkoxymethyl group.

    Abstract translation: 根据一个实施方案，光化射线或辐射敏感性树脂组合物包括含有含有至少一个酚羟基的结构（P）和含有至少一个酚羟基的结构（Q）的化合物（A） 氢原子被具有含有酸交联基团的环状结构的基团（S）代替，其特征在于具有酸交联基团的具有环状结构的基团（S）为具有多环结构的基团或具有环状 含有羟甲基和/或烷氧基甲基的结构。

    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE
    24.
    发明申请
    PATTERN-FORMING METHOD, ELECTRON BEAM-SENSITIVE OR EXTREME ULTRAVIOLET RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, MANUFACTURING METHOD OF ELECTRONIC DEVICE USING THEM AND ELECTRONIC DEVICE 审中-公开
    图案形成方法，电子束敏感或极端超紫外线辐射敏感性树脂组合物，电阻膜，使用其和电子器件的电子器件的制造方法

    公开(公告)号：US20140199617A1

    公开(公告)日：2014-07-17

    申请号：US14227444

    申请日：2014-03-27

    Applicant: FUJIFILM CORPORATION

    Inventor： Hideaki TSUBAKI ,  Hiroo TAKIZAWA ,  Takeshi KAWABATA

    IPC: G03F7/20 ,  G03F7/038

    CPC classification number: G03F7/20 ,  G03F7/0045 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/0392 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/325

    Abstract: A pattern-forming method includes in this order: step (1) of forming a film with an electron beam-sensitive or extreme ultraviolet radiation-sensitive resin composition that contains (A) a resin having an acid-decomposable repeating unit and capable of decreasing a solubility of the resin (A) in a developer containing an organic solvent by an action of an acid and (B) a low molecular weight compound capable of generating an acid upon irradiation with an electron beam or extreme ultraviolet radiation and decomposing by an action of an acid to decrease a solubility of the low molecular weight compound (B) in an organic solvent; step (2) of exposing the film with an electron beam or extreme ultraviolet radiation; and step (4) of developing the film with a developer containing an organic solvent after the exposing to form a negative pattern.

    Abstract translation: 图案形成方法包括以下顺序：用电子束敏感或极紫外线辐射敏感性树脂组合物形成膜的步骤（1），其包含（A）具有酸分解重复单元并能够降低的树脂 通过酸的作用使树脂（A）在含有有机溶剂的显影剂中的溶解度和（B）在电子束照射或极紫外线照射时能产生酸的低分子量化合物，并通过动作分解 的酸，以降低低分子量化合物（B）在有机溶剂中的溶解度; 步骤（2），用电子束或极紫外线辐射曝光胶片; 以及在暴露之后用含有机溶剂的显影剂显影该膜以形成负图案的步骤（4）。

    SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION
    25.
    发明申请
    SEMICONDUCTOR DEVICE AND INSULATING LAYER-FORMING COMPOSITION 有权
    半导体器件和绝缘层形成组合物

    公开(公告)号：US20170054076A1

    公开(公告)日：2017-02-23

    申请号：US15340831

    申请日：2016-11-01

    Applicant: FUJIFILM Corporation

    Inventor： Yuzo NAGATA ,  Hiroo TAKIZAWA ,  Satoru YAMADA

    IPC: H01L51/00 ,  C08F220/18 ,  C08F220/28 ,  C08F220/06

    CPC classification number: H01L51/004 ,  C08F220/06 ,  C08F220/18 ,  C08F220/28 ,  C08F220/32 ,  C08F2220/285 ,  H01L51/0043 ,  H01L51/052 ,  H01L51/0545

    Abstract: Provided is a semiconductor device which includes a semiconductor layer and an insulating layer adjacent to the semiconductor layer, in which the insulating layer is formed of a crosslinked product of a polymer compound that has a repeating unit (IA) represented by the following Formula (IA) and a repeating unit (IB) represented by the following Formula (IB); and an insulating layer-forming composition which is used for forming an insulating layer of a semiconductor device and contains a polymer compound that has the following repeating units (IA) and (IB). In Formulae, R1a and R1b each independently represent a hydrogen atom, a halogen atom, or an alkyl group. L1a, L2a, and L1b each independently represent a single bond or a linking group. X represents a crosslinkable group and YB represents a decomposable group or a hydrogen atom. m1a and m2a each independently represent an integer of 1 to 5. The symbol “*” represents a bonding position of the repeating units.

    Abstract translation: 在式中，R 1a和R 1b各自独立地表示氢原子，卤素原子或烷基。 L1a，L2a和L1b各自独立地表示单键或连接基团。 X表示可交联基团，YB表示可分解基团或氢原子。 m1a和m2a各自独立地表示1〜5的整数。符号“*”表示重复单元的键合位置。

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