PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    21.
    发明申请
    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 有权
    图案形成方法,抗紫外线敏感性或辐射敏感性树脂组合物,电阻膜,制造电子器件的方法和电子器件

    公开(公告)号:US20140248556A1

    公开(公告)日:2014-09-04

    申请号:US14280128

    申请日:2014-05-16

    Abstract: A pattern forming method including: (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (A) having a repeating unit having a group generating a polar group upon being decomposed by the action of an acid, and a repeating unit having an aromatic group, a compound (B) generating an acid upon irradiation with actinic rays or radiation, and a solvent (C); (ii) exposing the film; and (iii) developing the exposed film using a developer including an organic solvent to form a negative tone pattern, wherein the resin (A) is a resin having a repeating unit having a naphthyl group, and the like, and/or the actinic ray-sensitive or radiation-sensitive resin composition contains a compound (D) having a naphthalene ring, and the like.

    Abstract translation: 一种图案形成方法,包括:(i)使用含有具有通过酸的作用分解产生极性基团的重复单元的树脂(A)的光化射线敏感性或辐射敏感性树脂组合物形成膜 和具有芳基的重复单元,在用光化射线或辐射照射时产生酸的化合物(B)和溶剂(C); (ii)曝光胶片; 和(iii)使用包含有机溶剂的显影剂显影曝光的膜以形成负色调图案,其中树脂(A)是具有萘基的重复单元的树脂等,和/或光化射线 敏感性或辐射敏感性树脂组合物含有具有萘环的化合物(D)等。

    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    23.
    发明申请
    PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 有权
    图案形成方法,抗紫外线敏感性或辐射敏感性树脂组合物,电阻膜,制造电子器件的方法和电子器件

    公开(公告)号:US20140087310A1

    公开(公告)日:2014-03-27

    申请号:US14093781

    申请日:2013-12-02

    Abstract: A pattern forming method comprises (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the specific formula.

    Abstract translation: 图案形成方法包括:(i)通过使用光化射线敏感或辐射敏感性树脂组合物形成膜的步骤,所述树脂组合物包含:(A)含有具有能够通过酸的作用分解的基团的重复单元的树脂 以产生极性基团,(B)在用光化射线或辐射照射时能够产生酸的化合物,和(C)溶剂,(ii)暴露薄膜的步骤,和(iii)显影步骤 通过使用含有机溶剂的显影剂形成负图案的曝光膜,其中由下式(I)表示的重复单元的含量相对于树脂(A)中的所有重复单元和 树脂(A)含有除具有上述特定结构式的重复单元以外的非酚性芳香族基团的重复单元。

    METHOD FOR TESTING PHOTOSENSITIVE COMPOSITION AND METHOD FOR PRODUCING PHOTOSENSITIVE COMPOSITION

    公开(公告)号:US20240231235A1

    公开(公告)日:2024-07-11

    申请号:US18610588

    申请日:2024-03-20

    CPC classification number: G03F7/3028 G03F7/325

    Abstract: Provided are a method for testing a photosensitive composition and a method for producing a photosensitive composition that can easily test whether or not the photosensitive composition exhibits a predetermined LWR. A method for testing a photosensitive composition according to the present invention has a step 1 of using a reference photosensitive composition to form a resist film, bringing the resist film into contact with a treatment liquid, and measuring a dissolution rate of the resist film to obtain reference data; a step 2 of using a photosensitive composition for measurement to form a resist film, bringing the resist film into contact with a treatment liquid, and measuring a dissolution rate of the resist film to obtain measurement data; and a step 3 of performing comparison between the reference data and the measurement data to determine whether or not an allowable range is satisfied, wherein the treatment liquid includes an organic solvent and a metal X, the organic solvent does not include an aromatic hydrocarbon and includes an aliphatic hydrocarbon, and a mass ratio of a content of the aromatic hydrocarbon to a content of the metal X is 5.0×102 to 5.0×1012.

    METHOD FOR INSPECTING TREATMENT LIQUID AND METHOD FOR PRODUCING TREATMENT LIQUID

    公开(公告)号:US20240219359A1

    公开(公告)日:2024-07-04

    申请号:US18603775

    申请日:2024-03-13

    CPC classification number: G01N30/7206 G03F7/32 G01N2030/025

    Abstract: An object of the present invention is to provide a method for inspecting a treatment liquid to determine whether the treatment liquid, when used as a developer or a rinsing liquid, allows formation of a resist pattern with reduced variation in line width. Another object of the present invention is to provide a method for producing a treatment liquid.
    The method for inspecting a treatment liquid according to the present invention is a method for inspecting a treatment liquid including an aliphatic hydrocarbon solvent and has a step A1 of acquiring measurement data of a content of an acid component in the treatment liquid, the acid component being at least one selected from the group consisting of carboxylic acids having a hydrocarbon group having 1 to 3 carbon atoms and formic acid, and a step A2 of determining whether the measurement data acquired in the step A1 falls within a preset allowable range.

    ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

    公开(公告)号:US20230168581A1

    公开(公告)日:2023-06-01

    申请号:US18159380

    申请日:2023-01-25

    CPC classification number: G03F7/039 G03F7/028

    Abstract: An object of the present invention is to provide an actinic ray-sensitive or radiation-sensitive resin composition by which a pattern having excellent LWR performance can be formed. In addition, another object of the present invention is to provide a resist film, a pattern forming method, and a method for manufacturing an electronic device, each relating to the actinic ray-sensitive or radiation-sensitive resin composition.
    The actinic ray-sensitive or radiation-sensitive resin composition according to an embodiment of the present invention is an actinic ray-sensitive or radiation-sensitive resin composition including an acid-decomposable resin including a repeating unit having an acid-decomposable group in which an acid group having a pKa of 13 or less is protected by a leaving group that leaves by an action of an acid, and one or more compounds that generate an acid upon irradiation with actinic rays or radiation, which are selected from a compound (I) and a compound (II),
    in which the content of the acid-decomposable resin is 10% by mass or more with respect to a total solid content of the composition,
    the content of the compounds that generate an acid upon irradiation with actinic rays or radiation is 10% by mass or more with respect to the total solid content of the composition, and
    the acid-decomposable resin has a halogen atom in a repeating unit other than the repeating unit having a group that generates an acid upon irradiation with actinic rays or radiation.

    PATTERN FORMATION METHOD AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE

    公开(公告)号:US20230067750A1

    公开(公告)日:2023-03-02

    申请号:US17952941

    申请日:2022-09-26

    Abstract: An object of the present invention is to provide a pattern forming method using a non-chemically amplified resist composition, which has excellent washing properties in a washing step with an EBR liquid and is less likely to cause a film loss in a non-exposed portion during development using an organic solvent-based developer.
    Another object of the present invention to provide a method for manufacturing an electronic device using the pattern forming method.
    The pattern forming method of the present invention includes a resist film forming step of forming a resist film on a substrate using an actinic ray-sensitive or radiation-sensitive resin composition, a washing step of washing an outer peripheral portion of the substrate with a washing solution including an organic solvent while rotating the substrate on which the resist film is formed, an exposing step of exposing the resist film, a developing step of positively developing the exposed resist film using an organic solvent-based developer, in which the actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a polar group, a compound including an ion pair which is decomposed by an irradiation with an actinic ray or a radiation, and a solvent, and all of expressions (1) to (4) are satisfied.

    METHOD FOR PRODUCING RESIST COMPOSITION AND PATTERN FORMING METHOD

    公开(公告)号:US20230045851A1

    公开(公告)日:2023-02-16

    申请号:US17903158

    申请日:2022-09-06

    Abstract: A method for producing a resist composition includes setting parameter, acquiring a pattern size for a regression analysis, analyzing performing a regression analysis, calculating a pattern size of a target resist composition based on the regression analysis, comparing the pattern size of the target resist composition and the target pattern size, determining a formulating amount of the resist composition in a case where a difference between the pattern size of the target resist composition and the target pattern size is within an allowable range, and producing a resist composition based on the determined formulating amount, in which, in a case where the difference is out of the allowable range, the method further includes changing at least the content of components in the target resist composition, and the formulating amount of the resist composition is determined based on the changed physical quantity to produce the resist composition.

    PATTERN FORMING METHOD AND RESIST LAMINATE FOR ORGANIC SOLVENT DEVELOPMENT

    公开(公告)号:US20210200098A1

    公开(公告)日:2021-07-01

    申请号:US17200912

    申请日:2021-03-15

    Abstract: A pattern forming method includes: preparing a laminate having a substrate, an inorganic base layer, and a resist layer; exposing the resist layer; and developing the laminate using a developer including an organic solvent to form a negative tone pattern, in which a surface energy γA of the resist layer and a surface energy γB of the inorganic base layer after irradiation of the laminate with ultraviolet rays having a wavelength of 13.5 nm from the resist layer side with an integrated light quantity of 40 mJ/cm2, followed by heating of the laminate at 110° C. for 60 seconds are 60 mJ/m2 or more and 55 mJ/m2 or more, respectively, and a difference γAB in surface energies that is defined by Formula (A) is 5.0 mJ/m2 or less: γAB=γA−γB (Formula (A)).

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