PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE
    27.
    发明申请
    PATTERN FORMING METHOD, RESIST PATTERN, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE 审中-公开
    图案形成方法,电阻图案,制造电子器件的方法和电子器件

    公开(公告)号:US20170075222A1

    公开(公告)日:2017-03-16

    申请号:US15358537

    申请日:2016-11-22

    Abstract: A pattern forming method includes, in this order, forming a film on a substrate, using an active-light-sensitive or radiation-sensitive resin composition containing a resin (A) which has a repeating unit having a phenolic hydroxyl group, and a repeating unit having a group that decomposes by the action of an acid to generate a carboxyl group, and a compound (B) that generates an acid upon irradiation with active light or radiation; exposing the film; and developing the exposed film using a developer including an organic solvent, in which the developer including an organic solvent contains an organic solvent having 8 or more carbon atoms and 2 or less heteroatoms in the amount of 50% by mass or more.

    Abstract translation: 图案形成方法依次包括使用含有具有酚羟基的重复单元的树脂(A)的活性光敏感或辐射敏感性树脂组合物在基材上形成膜,并且重复 具有通过酸的作用分解以产生羧基的基团的单元和在用活性光或辐射照射时产生酸的化合物(B); 曝光电影; 并使用包括有机溶剂的显影剂显影所述曝光的膜,其中包含有机溶剂的显影剂含有具有8个或更多个碳原子的有机溶剂和2个或更少的杂原子的量为50质量%以上。

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