公开(公告)号：US11505718B2

公开(公告)日：2022-11-22

申请号：US17318011

申请日：2021-05-12

Applicant: fujifilm electronic materials u.s.a., inc

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C09G1/06 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  C09G1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

公开(公告)号：US11034859B2

公开(公告)日：2021-06-15

申请号：US16298505

申请日：2019-03-11

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen ,  Yannan Liang ,  Ting-Kai Huang

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14 ,  C09G1/06 ,  C09K13/06 ,  C09G1/04 ,  B24B1/00 ,  C09G1/00 ,  B24B37/04 ,  H01L21/306

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

公开(公告)号：US20190300749A1

公开(公告)日：2019-10-03

申请号：US16298505

申请日：2019-03-11

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： David (Tawei) Lin ,  Bin Hu ,  Liqing (Richard) Wen

IPC: C09G1/02 ,  H01L21/321

Abstract: A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

公开(公告)号：US20250019569A1

公开(公告)日：2025-01-16

申请号：US18766908

申请日：2024-07-09

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Eric Turner ,  Bin Hu ,  Alexei P. Leonov

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/3105

Abstract: This disclosure relates to polishing compositions containing at least one abrasive, at least one polymer removal enhancer, and at least one solvent. The polishing compositions of this disclosure may optionally include at least one of a cationic surfactant, an azole-containing corrosion inhibitor, or a nonionic surfactant. The polishing compositions of this disclosure may polish a polymeric substrate at a rate of at least about 200 Å/min.

公开(公告)号：US20230203343A1

公开(公告)日：2023-06-29

申请号：US17880758

申请日：2022-08-04

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC: C09G1/02 ,  H01L21/321 ,  C09K15/30

CPC classification number: C09G1/02 ,  H01L21/3212 ,  C09K15/30

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20230060999A1

公开(公告)日：2023-03-02

申请号：US17896259

申请日：2022-08-26

Applicant: FUJIFILM ELECTRONIC MATERIALS U.S.A., INC.

Inventor： James McDonough ,  Bin Hu ,  Qingmin Cheng

IPC: C09G1/02 ,  H01L21/321

Abstract: The present disclosure provides a polishing composition that includes at least one first amine, at least one second amine, and other components such as azoles. The first amine has a low molecular weight, for example 120 g/mol or less. The second amine has a high molecular weight, for example 125 g/mol or higher. The compositions can polish substrates that include copper and molybdenum, or alloys of each, at a high selectivity of copper to molybdenum.

公开(公告)号：US20210253904A1

公开(公告)日：2021-08-19

申请号：US17169685

申请日：2021-02-08

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC: C09G1/02 ,  B24B37/04

Abstract: A polishing composition, includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a ruthenium removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20210253903A1

公开(公告)日：2021-08-19

申请号：US17169676

申请日：2021-02-08

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Ting-Kai Huang ,  Tawei Lin ,  Bin Hu ,  Liqing Wen ,  Yannan Liang

IPC: C09G1/02 ,  C09K15/30 ,  H01L21/321

Abstract: A polishing composition includes an abrasive; a pH adjuster; a barrier film removal rate enhancer; a low-k removal rate inhibitor; an azole-containing corrosion inhibitor; and a hard mask removal rate enhancer. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.

公开(公告)号：US20240327675A1

公开(公告)日：2024-10-03

申请号：US18616347

申请日：2024-03-26

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Hanyu Fan ,  Bin Hu ,  Yannan Liang ,  Ting-Kai Huang ,  Eric Turner

IPC: C09G1/02

CPC classification number: C09G1/02

Abstract: This disclosure relates to a polishing composition that includes an abrasive; at least one Si-containing compound including an acidic group, an ester thereof, or a salt thereof; and water. This disclosure also features a method of using the polishing composition to polish a substrate.

公开(公告)号：US20230135325A1

公开(公告)日：2023-05-04

申请号：US17970667

申请日：2022-10-21

Applicant: Fujifilm Electronic Materials U.S.A., Inc.

Inventor： Yannan Liang ,  Bin Hu ,  Abhudaya Mishra ,  Ting-Kai Huang ,  Yibin Zhang ,  James Johnston ,  James McDonough

IPC: C09G1/02 ,  H01L21/306

Abstract: A polishing composition includes an anionic abrasive, a pH adjuster a low-k removal rate inhibitor, a ruthenium removal rate enhancer, and water. A method of polishing a substrate includes the steps of: applying the polishing composition described herein to a surface of a substrate, wherein the surface comprises ruthenium or a hard mask material; and bringing a pad into contact with the surface of the substrate and moving the pad in relation to the substrate.