Abstract:
An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.
Abstract:
An apparatus is described that includes an integrated two-dimensional image capture and three-dimensional time-of-flight depth capture system. The three-dimensional time-of-flight depth capture system includes an illuminator to generate light. The illuminator includes arrays of light sources. Each of the arrays is dedicated to a particular different partition within a partitioned field of view of the illuminator.
Abstract:
An apparatus is described that includes an image sensor having timing and control circuitry and threshold circuitry. The timing and control circuitry is to generate signals to cause multiple transfers of charge from a photo-diode to a storage capacitor within a pixel cell during an image capture sequence. The threshold circuitry is to track the storage capacitor's voltage over the course of the multiple transfers and recognize when the storage capacitor's voltage reaches a threshold.
Abstract:
A time of flight camera system is described. The time of flight camera system includes an illuminator. The illuminator has a movable optical component to scan light within the time-of-flight camera's field of view to illuminate a first region within the field of view that is larger than a second region within the time-of-flight camera's field of view that is illuminated at any instant by the light. The illuminator also includes an image sensor to determine depth profile information within the first region using time-of-flight measurement techniques.
Abstract:
An image sensor is described having a pixel cell unit. The pixel cell unit has first, second and third transfer gate transistor gates on a semiconductor surface respectively coupled between first, second and third visible light photodiode regions and a first capacitance region. The pixel cell unit has a fourth transfer gate transistor gate on the semiconductor surface coupled between a first infrared photodiode region and a second capacitance region.
Abstract:
An image sensor is described having a pixel array. The pixel array has a unit cell that includes visible light photodiodes and an infra-red photodiode. The visible light photodiodes and the infra-red photodiode are coupled to a particular column of the pixel array. The unit cell has a first capacitor coupled to the visible light photodiodes to store charge from each of the visible-light photodiodes. The unit cell has a readout circuit to provide the first capacitor's voltage on the particular column. The unit cell has a second capacitor that is coupled to the infra-red photodiode through a first transfer gate transistor to receive charge from the infra-red photodiode during a time-of-flight exposure. The first capacitor is coupled to the infra-red photodiode through a second transfer gate transistor to receive charge from the infra-red photodiode during the time-of-flight exposure.
Abstract:
An apparatus is described that includes a time-of-flight camera system having an illuminator. The illuminator has an optical component and a light source. The optical component and the light source are designed to substantially illuminate a smaller region within the camera system's field of view at an upper emitted optical power limit of the illuminator where the smaller region substantially encompasses an object of interest within the field of view.
Abstract:
An apparatus is described that includes first and second pixels arrays integrated on a same semiconductor chip. The first pixel array contains visible light pixels and no Z pixels. The second pixel array contains Z pixels and no visible light pixels. The first and second pixel arrays do not overlap on said same semiconductor chip.
Abstract:
An apparatus is described that includes a first semiconductor chip having a first pixel array. The first pixel array has visible light sensitive pixels. The apparatus includes a second semiconductor chip having a second pixel array. The first semiconductor chip is stacked on the second semiconductor chip such that the second pixel array resides beneath the first pixel array. The second pixel array has IR light sensitive pixels for time-of-flight based depth detection.
Abstract:
An apparatus is described that includes an integrated two-dimensional image capture and three-dimensional time-of-flight depth capture system. The three-dimensional time-of-flight depth capture system includes an illuminator to generate light. The illuminator includes arrays of light sources. Each of the arrays is dedicated to a particular different partition within a partitioned field of view of the illuminator.