公开(公告)号：US07625773B2

公开(公告)日：2009-12-01

申请号：US12264774

申请日：2008-11-04

Applicant: Markus Lutz ,  Aaron Partridge ,  Wilhelm Frey ,  Markus Ulm ,  Matthias Metz ,  Brian Stark ,  Gary Yama

Inventor： Markus Lutz ,  Aaron Partridge ,  Wilhelm Frey ,  Markus Ulm ,  Matthias Metz ,  Brian Stark ,  Gary Yama

IPC: H01L21/00 ,  H01L21/461 ,  H01L27/14 ,  H01L29/84 ,  H01L29/82

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/112 ,  B82Y30/00 ,  H01L2224/13 ,  H01L2924/1461 ,  H01L2924/00

Abstract: A mechanical structure is disposed in a chamber, at least a portion of which is defined by the encapsulation structure. A first method provides a channel cap having at least one preform portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. A second method provides a channel cap having at least one portion disposed over or in at least a portion of an anti-stiction channel to seal the anti-stiction channel, at least in part. The at least one portion is fabricated apart from the electromechanical device and thereafter affixed to the electromechanical device. A third method provides a channel cap having at least one portion disposed over or in at least a portion of the anti-stiction channel to seal an anti-stiction channel, at least in part. The at least one portion may comprise a wire ball, a stud, metal foil or a solder preform. A device includes a substrate, an encapsulation structure and a mechanical structure. An anti-stiction layer is disposed on at least a portion of the mechanical structure. An anti-stiction channel is formed in at least one of the substrate and the encapsulation structure. A cap has at least one preform portion disposed over or in at least a portion of the anti-stiction channel to seal the anti-stiction channel, at least in part.

公开(公告)号：US20080041155A1

公开(公告)日：2008-02-21

申请号：US11506712

申请日：2006-08-18

Applicant: Zhiyu Pan ,  Christoph Lang ,  Gary Yama

Inventor： Zhiyu Pan ,  Christoph Lang ,  Gary Yama

IPC: G01P15/08

CPC classification number: G01C19/5607

Abstract: A dual-axis tuning fork gyroscope includes four open-ended tuning forks arranged coplanarly in two opposite pairs, a first pair of open-ended tuning forks being arranged opposite one another along a first axis, a second pair of open-ended tuning forks being arranged opposite one another along a second axis, the first axis and the second axis being perpendicular to one another. The four open-ended tuning forks are mechanically coupled together so that all four tuning forks vibrate in the same manner in terms of frequency and phase.

Abstract translation: 双轴音叉陀螺仪包括四个以两对相对共面布置的开放式调谐叉，第一对开放式调谐叉沿着第一轴线彼此相对布置，第二对开放式调音叉为 沿着第二轴线彼此相对布置，第一轴线和第二轴线彼此垂直。 四个开放式调谐叉机械耦合在一起，使得所有四个调谐叉在频率和相位方面以相同的方式振动。

公开(公告)号：US20070013464A1

公开(公告)日：2007-01-18

申请号：US11182299

申请日：2005-07-15

Applicant: Zhiyu Pan ,  Rob Candler ,  Markus Lutz ,  Aaron Partridge ,  Volker Materna ,  Gary Yama ,  Wilhelm Frey

Inventor： Zhiyu Pan ,  Rob Candler ,  Markus Lutz ,  Aaron Partridge ,  Volker Materna ,  Gary Yama ,  Wilhelm Frey

IPC: H03H9/24

CPC classification number: H03H9/505 ,  H03H9/0023 ,  H03H9/02338 ,  H03H9/2468 ,  H03H2009/02496

Abstract: There are many inventions described and illustrated herein, as well as many aspects and embodiments of those inventions. In one aspect, the present invention is directed to a resonator architecture including a plurality of in-plane vibration microelectromechanical resonators (for example, 2 or 4 resonators) that are mechanically coupled to provide, for example, a differential signal output. In one embodiment, the present invention includes four commonly shaped microelectromechanical tuning fork resonators (for example, tuning fork resonators having two or more rectangular-shaped or square-shaped tines). Each resonator is mechanically coupled to another resonator of the architecture. For example, each resonator of the architecture is mechanically coupled to another one of the resonators on one side or a corner of one of the sides. In this way, all of the resonators, when induced, vibrate at the same frequency.

Abstract translation: 这里描述和示出了许多发明，以及这些发明的许多方面和实施例。 在一个方面，本发明涉及一种包括机械耦合以提供例如差分信号输出的多个平面内振动微机电谐振器（例如，2或4个谐振器）的谐振器结构。 在一个实施例中，本发明包括四个通常形状的微机电音叉谐振器（例如，具有两个或更多个矩形或正方形形状的叉的音叉谐振器）。 每个谐振器机械耦合到该架构的另一谐振器。 例如，该架构的每个谐振器在其中一个侧面的一侧或拐角上机械耦合到另一个谐振器。 以这种方式，所有谐振器在被感应时以相同的频率振动。

公开(公告)号：US20170362083A1

公开(公告)日：2017-12-21

申请号：US15535327

申请日：2015-12-10

Applicant: Seow Yuen YEE ,  Gary YAMA ,  Robert Bosch GmbH

Inventor： Seow Yuen Yee ,  Gary Yama

IPC: B81C99/00 ,  B81B7/00 ,  G01L9/00

Abstract: A MEMS device, e.g., a flexible MEMS pressure sensor, is formed by disposing a sacrificial layer, such as photoresist, on a substrate. A first flexible support layer is disposed on the substrate, and a first conductive layer is disposed over a portion of the first support layer. A liquid or gel separator, e.g., silicone oil, is disposed on an internal region of the first conductive layer. A second flexible support layer encapsulates the first conductive layer and the separator. A second conductive layer disposed over the second support layer at least partially overlaps the first conductive layer and forms a parallel plate capacitor. A third flexible support layer encapsulates the second conductive layer and second support layer. Soaking the sensor in hot water releases the sensor from the sacrificial layer.

公开(公告)号：US08878314B2

公开(公告)日：2014-11-04

申请号：US13425543

申请日：2012-03-21

Applicant: Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

Inventor： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

IPC: H01L29/84 ,  B81B7/00

CPC classification number: B81B7/007 ,  B81B2207/092 ,  B81B2207/095

Abstract: A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.

Abstract translation: 包括封装在盖层中的横向电通路的MEMS器件结构及其制造方法。 MEMS器件结构包括位于MEMS器件层上的盖层。 盖层覆盖MEMS器件和MEMS器件层中的一个或多个MEMS器件层电极。 盖层包括可从盖层的表面接近的至少一个盖层电极。 电通孔被封装在覆盖层中，该覆盖层跨越从帽层电极到一个或多个MEMS器件层电极的横向距离延伸。 绝缘层位于电通孔周围，以将电通孔与盖层电隔离。

公开(公告)号：US08673756B2

公开(公告)日：2014-03-18

申请号：US13232005

申请日：2011-09-14

Applicant: Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

Inventor： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

IPC: H01L21/20

CPC classification number: B81B3/0021 ,  B81B2207/095 ,  B81C1/00301

Abstract: In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.

Abstract translation: 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上方提供氧化物层，在氧化物层的上表面上方提供第一覆盖层部分，蚀刻第一电极周界， 沟槽延伸穿过第一盖层部分并在氧化物层处停止，在第一电极周界限定沟槽内沉积第一材料部分，在第一材料部分上方沉积第二盖层部分，释放氧化物层的一部分的蒸气，沉积 在所述第二盖层部分上方的第三盖层部分，蚀刻延伸穿过所述第二盖层部分和所述第三盖层部分的第二电极周界限定沟槽，以及在所述第二电极周界限定沟槽内沉积第二材料部分， 包括第一材料部分和第二材料部分的间隔件限定了平面外的电极。

公开(公告)号：US08426289B2

公开(公告)日：2013-04-23

申请号：US13232209

申请日：2011-09-14

Applicant: Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

Inventor： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

IPC: H01L21/76

CPC classification number: H01L29/0649 ,  H01L21/76232 ,  H01L21/76283 ,  H01L21/7682 ,  H01L23/4821 ,  H01L2924/0002 ,  H01L2924/00

Abstract: In one embodiment, a method of forming an insulating spacer includes providing a base layer, providing an intermediate layer above an upper surface of the base layer, etching a first trench in the intermediate layer, depositing a first insulating material portion within the first trench, depositing a second insulating material portion above an upper surface of the intermediate layer, forming an upper layer above an upper surface of the second insulating material portion, etching a second trench in the upper layer, and depositing a third insulating material portion within the second trench and on the upper surface of the second insulating material portion.

Abstract translation: 在一个实施例中，形成绝缘间隔物的方法包括提供基底层，在基底层的上表面上方提供中间层，蚀刻中间层中的第一沟槽，在第一沟槽内沉积第一绝缘材料部分， 在所述中间层的上表面上方沉积第二绝缘材料部分，在所述第二绝缘材料部分的上表面上形成上层，蚀刻所述上层中的第二沟槽，以及在所述第二沟槽内沉积第三绝缘材料部分 并且在第二绝缘材料部分的上表面上。

公开(公告)号：US20120261822A1

公开(公告)日：2012-10-18

申请号：US13232005

申请日：2011-09-14

Applicant: Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

Inventor： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

IPC: H01L29/40 ,  H01L21/44

CPC classification number: B81B3/0021 ,  B81B2207/095 ,  B81C1/00301

Abstract: In one embodiment, a method of forming an out-of-plane electrode includes providing an oxide layer above an upper surface of a device layer, providing a first cap layer portion above an upper surface of the oxide layer, etching a first electrode perimeter defining trench extending through the first cap layer portion and stopping at the oxide layer, depositing a first material portion within the first electrode perimeter defining trench, depositing a second cap layer portion above the first material portion, vapor releasing a portion of the oxide layer, depositing a third cap layer portion above the second cap layer portion, etching a second electrode perimeter defining trench extending through the second cap layer portion and the third cap layer portion, and depositing a second material portion within the second electrode perimeter defining trench, such that a spacer including the first material portion and the second material portion define out-of-plane electrode.

Abstract translation: 在一个实施例中，形成平面外电极的方法包括在器件层的上表面上方提供氧化物层，在氧化物层的上表面上方提供第一覆盖层部分，蚀刻第一电极周界， 沟槽延伸穿过第一盖层部分并在氧化物层处停止，在第一电极周界限定沟槽内沉积第一材料部分，在第一材料部分上方沉积第二盖层部分，释放氧化物层的一部分的蒸气，沉积 在所述第二盖层部分上方的第三盖层部分，蚀刻延伸穿过所述第二盖层部分和所述第三盖层部分的第二电极周界限定沟槽，以及在所述第二电极周界限定沟槽内沉积第二材料部分， 包括第一材料部分和第二材料部分的间隔件限定了平面外的电极。

公开(公告)号：US20120261774A1

公开(公告)日：2012-10-18

申请号：US13425543

申请日：2012-03-21

Applicant: Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

Inventor： Andrew B. Graham ,  Gary Yama ,  Gary O'Brien

IPC: H01L29/84 ,  H01L21/02

CPC classification number: B81B7/007 ,  B81B2207/092 ,  B81B2207/095

Abstract: A MEMS device structure including a lateral electrical via encased in a cap layer and a method for manufacturing the same. The MEMS device structure includes a cap layer positioned on a MEMS device layer. The cap layer covers a MEMS device and one or more MEMS device layer electrodes in the MEMS device layer. The cap layer includes at least one cap layer electrode accessible from the surface of the cap layer. An electrical via is encased in the cap layer extending across a lateral distance from the cap layer electrode to the one or more MEMS device layer electrodes. An isolating layer is positioned around the electrical via to electrically isolate the electrical via from the cap layer.

Abstract translation: 包括封装在盖层中的横向电通路的MEMS器件结构及其制造方法。 MEMS器件结构包括位于MEMS器件层上的盖层。 盖层覆盖MEMS器件和MEMS器件层中的一个或多个MEMS器件层电极。 盖层包括可从盖层的表面接近的至少一个盖层电极。 电通孔被封装在覆盖层中，该覆盖层跨越从帽层电极到一个或多个MEMS器件层电极的横向距离延伸。 绝缘层位于电通孔周围，以将电通孔与盖层电隔离。

公开(公告)号：US20110254020A1

公开(公告)日：2011-10-20

申请号：US13171112

申请日：2011-06-28

Applicant: Gary Yama

Inventor： Gary Yama

IPC: H01L29/161 ,  H01L21/20

CPC classification number: B81C1/00595 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/0475

Abstract: A method of etching a device in one embodiment includes providing a silicon carbide substrate, forming a silicon nitride layer on a surface of the silicon carbide substrate, forming a silicon carbide layer on a surface of the silicon nitride layer, forming a silicon dioxide layer on a surface of the silicon carbide layer, forming a photoresist mask on a surface of the silicon dioxide layer, and etching the silicon dioxide layer through the photoresist mask.

Abstract translation: 在一个实施例中蚀刻器件的方法包括提供碳化硅衬底，在碳化硅衬底的表面上形成氮化硅层，在氮化硅层的表面上形成碳化硅层，在二氧化硅层上形成二氧化硅层 碳化硅层的表面，在二氧化硅层的表面上形成光致抗蚀剂掩模，并且通过光致抗蚀剂掩模蚀刻二氧化硅层。