公开(公告)号：US20080128512A1

公开(公告)日：2008-06-05

申请号：US11978526

申请日：2007-10-29

申请人： Mark Schmidt ,  Garrett Russell ,  David M. Wilz ,  Robert Blake ,  Donald T. Hudrick ,  Stephen J. Colavito ,  C. Harry Knowles ,  George Rockstein ,  Xiaoxun Zhu ,  John Bonanno ,  Sung Byun ,  Congwei Xu ,  Ming Jiang ,  Lin Wang ,  Meng Hu ,  Hongjian Jin ,  MingQing Ji ,  Shamei Shi ,  Ka Man Au ,  Patrick Giordano

发明人： Mark Schmidt ,  Garrett Russell ,  David M. Wilz ,  Robert Blake ,  Donald T. Hudrick ,  Stephen J. Colavito ,  C. Harry Knowles ,  George Rockstein ,  Xiaoxun Zhu ,  John Bonanno ,  Sung Byun ,  Congwei Xu ,  Ming Jiang ,  Lin Wang ,  Meng Hu ,  Hongjian Jin ,  MingQing Ji ,  Shamei Shi ,  Ka Man Au ,  Patrick Giordano

IPC分类号： G06K7/10

CPC分类号： G06K7/10871 ,  G06K7/10 ,  G06K7/10564 ,  G06K7/10584 ,  G06K7/10594 ,  G06K7/10603 ,  G06K7/10663 ,  G06K7/10673 ,  G06K7/10693 ,  G06K7/10702 ,  G06K7/10792 ,  G06K7/10801 ,  G06K7/10811 ,  G06K7/10851 ,  G06K7/10861 ,  G06K7/10881 ,  G06K7/10891 ,  G06K7/14 ,  G06K17/0022 ,  G06K2207/1012

摘要： A wireless code symbol reading system including a wireless hand-supportable code symbol reader in two-way RF communication with a base station operably connected to a host system, by way of an RF-based wireless data communication link having a predetermined RF communication range over which two-way communication of data packets can occur. The wireless hand-supportable code symbol reader is programmed to automatically detect when it is located inside and outside of the predetermined RF communication range. When the wireless reader is inside the RF communication range, then symbol character data is automatically transmitted to the base station, and when the wireless reader is located outside of the RF communication range, then symbol character data is automatically collected and stored in a data packet buffer, until the wireless reader has re-entered its RF communication range.

摘要翻译： 一种无线代码符号读取系统，其包括通过与具有预定的RF通信范围的基于RF的无线数据通信链路的可操作地连接到主机系统的基站进行双向RF通信的无线手持式代码符号读取器 可能发生数据包的双向通信。 无线手持式代码符号读取器被编程为自动检测何时位于预定的RF通信范围内部和外部。 当无线阅读器在RF通信范围内时，符号字符数据自动发送到基站，当无线阅读器位于RF通信范围之外时，符号字符数据被自动收集并存储在数据包中 缓冲区，直到无线阅读器重新进入其RF通信范围。

公开(公告)号：US07287314B2

公开(公告)日：2007-10-30

申请号：US10789777

申请日：2004-02-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  John Jaekoyun Yang

IPC分类号： G11B5/17 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C23F3/04 ,  G11B5/17 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  Y10T29/49041 ,  Y10T29/4906 ,  Y10T29/49064

摘要： A Chemical Mechanical Polish (CMP) process and slurry therefore slurry that is capable of removing NiFe, SiO2, Photoresist, Ta, alumina and Cu at substantially the same rate. The slurry is useful for obtaining a substantially planar surface of several materials while avoiding corrosion of Cu coil and NiFe structure.

摘要翻译： 化学机械抛光（CMP）工艺和浆料，因此能够以基本相同的速率去除NiFe，SiO 2，光致抗蚀剂，Ta，氧化铝和Cu。 该浆料可用于获得几种材料的基本平坦的表面，同时避免Cu线圈和NiFe结构的腐蚀。

公开(公告)号：US20070026537A1

公开(公告)日：2007-02-01

申请号：US11184364

申请日：2005-07-18

申请人： Ming Jiang ,  Sue Zhang ,  Yi Zheng

发明人： Ming Jiang ,  Sue Zhang ,  Yi Zheng

IPC分类号： G11B5/33 ,  H01L21/00

CPC分类号： G11B5/3163 ,  G11B5/1278

摘要： A method using a CMP resistant hardmask in a process of fabricating a pole piece for a magnetic head is described. A set of layers used as the mask for milling the pole piece preferably includes a CMP resistant hardmask of silicon dioxide, a resist hardmask, an upper hardmask and a photoresist mask respectively. A multi-step reactive-ion etching (RIE) process is preferably used to sequentially remove the excess materials in the layer stack to ultimately define the multilayer mask for the pole piece. The excess pole piece material is then milled away. The wafer is then refilled with a nonmagnetic material such as alumina. A CMP liftoff is used to remove the resist hardmask. The material for the CMP resistant hardmask is selected to have a high resistance to the CMP liftoff process in comparison to the refill material. The CMP resistant hardmask is preferably then removed by a RIE process.

摘要翻译： 描述了在制造用于磁头的极片的工艺中使用CMP耐磨硬掩模的方法。 作为用于研磨极片的掩模的一组层优选分别包括二氧化硅的CMP耐磨硬掩模，抗蚀剂硬掩模，上硬掩模和光致抗蚀剂掩模。 优选使用多步反应离子蚀刻（RIE）工艺来顺序地去除层叠中的多余材料以最终限定极片的多层掩模。 然后将多余的极片材料磨掉。 然后用非磁性材料如氧化铝再填充晶片。 CMP剥离用于去除抗蚀剂硬掩模。 选择用于CMP耐磨硬掩模的材料以与补充材料相比具有对CMP剥离工艺的高抗性。 然后优选通过RIE工艺去除CMP耐磨硬掩模。

公开(公告)号：US20060043060A1

公开(公告)日：2006-03-02

申请号：US10928002

申请日：2004-08-27

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Hong Zhang

IPC分类号： B44C1/22 ,  C23F1/00

CPC分类号： B82Y25/00 ,  G11B5/3163 ,  G11B5/3169

摘要： A method is described for thin film processing using a selected CMP slurry with a silicon dioxide stop layer. The slurry includes an abrasive, preferably alumina, a corrosion inhibitor, preferably benzotriazole (BTA), and an oxidizer preferably hydrogen peroxide. The method is particularly useful for fabricating thin film heads where alumina is used as the dielectric. The method can be used to planarize metal structures surrounded by alumina in magnetic heads. The alumina refill is deposited to the final target height which is slightly below the height of the metal. A thin silicon dioxide stop layer is deposited over the alumina. The CMP is executed using the selected slurry to planarize the wafer down to the stop layer. Preferably only a negligible amount of the stop layer remains and the height of the metal structure is essentially the same as the deposited height of the refilled alumina.

摘要翻译： 描述了使用具有二氧化硅停止层的所选CMP浆料进行薄膜处理的方法。 浆料包括研磨剂，优选氧化铝，腐蚀抑制剂，优选苯并三唑（BTA）和优选过氧化氢的氧化剂。 该方法对于制造其中使用氧化铝作为电介质的薄膜头特别有用。 该方法可用于平面化由磁头中的氧化铝包围的金属结构。 氧化铝填充物沉积到稍低于金属高度的最终目标高度。 在氧化铝上沉积薄的二氧化硅阻挡层。 使用所选择的浆料执行CMP以将晶片平坦化到停止层。 优选地，仅剩下可忽略量的止挡层，并且金属结构的高度与再填充氧化铝的沉积高度基本相同。

公开(公告)号：US20060021973A1

公开(公告)日：2006-02-02

申请号：US10903833

申请日：2004-07-30

申请人： Hung-Chin Guthrie ,  Ming Jiang

发明人： Hung-Chin Guthrie ,  Ming Jiang

IPC分类号： C03C15/00

CPC分类号： C03C15/00 ,  C03C19/00 ,  G11B5/8404

摘要： A chemical-mechanical nanogrinding process achieves near-zero pole tip recession (PTR) to minimize magnetic space loss of the head transducer to media spacing loss, alumina recession/trailing edge profile variation, and smooth surface finish with minimal smearing across multi-layers of thin films and the hard substrate to meet the requirements of high areal density head. With a fine lapping plate with a fixed-abrasive nanogrinding process, PTR can be improved to a mean of about 1.0 nm.

摘要翻译： 化学机械纳米研磨工艺实现近零极极尖衰退（PTR），以最小化头部换能器的磁空间损失，使介质间隔损耗，氧化铝凹陷/后缘轮廓变化，以及光滑的表面光洁度，同时最小化多层 薄膜和硬质基材满足高密度面的要求。 使用具有固定研磨纳米研磨工艺的精细研磨板，PTR可以提高至约1.0nm的平均值。

公开(公告)号：US06984613B1

公开(公告)日：2006-01-10

申请号：US10931385

申请日：2004-08-31

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Nick Lara

IPC分类号： C11D17/00

CPC分类号： C11D3/0073 ,  C11D9/007 ,  C11D9/30 ,  C11D11/0047

摘要： The present invention is directed to methods for polishing and cleaning a wafer having CoFeNi structures within alumina fill to achieve corrosion-free, smooth, and planar surface. A preferred chemical mechanical polishing (CMP) method includes a CMP polishing compound including alumina abrasive particulates, 1H-Benzotriazole (BTA), and hydrogen peroxide (H2O2). A cleaning solution for CoFeNi structures in alumina fill of the present invention preferably includes 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 4-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, hydrogenated 5-Methyl-1H-Benzotriazole in a concentration range of from 1% to 5%, sodium octanoate in a concentration range of from 5% to 10%, and water in a concentration range of from 65% to 95%. The cleaning solution is typically used with DI water to create an applied solution having a range of from 0.1% to 10% by volume of the cleaning solution.

摘要翻译： 本发明涉及在氧化铝填充物内抛光和清洗具有CoFeNi结构的晶片以实现无腐蚀，平滑和平坦的表面的方法。 优选的化学机械抛光（CMP）方法包括CMP抛光化合物，其包括氧化铝磨粒，1H-苯并三唑（BTA）和过氧化氢（H 2 O 2 O 2）。 本发明的氧化铝填充物中的CoFeNi结构的清洗液优选含有浓度范围为1％〜5％的4-甲基-1H-苯并三唑，浓度范围为1％〜5％的5-甲基-1H-苯并三唑 5％的浓度范围为1％至5％的氢化的4-甲基-1H-苯并三唑，浓度范围为1％至5％的氢化的5-甲基-1H-苯并三唑，浓度范围为 5％至10％，浓度范围为65％至95％的水。 清洁溶液通常与去离子水一起使用以产生具有0.1至10体积％范围的清洁溶液的施用溶液。

公开(公告)号：US20050259355A1

公开(公告)日：2005-11-24

申请号：US11195222

申请日：2005-08-02

申请人： Yunxiao Gao ,  Hung-Chin Guthrie ,  Ming Jiang ,  Sue Siyang Zhang

发明人： Yunxiao Gao ,  Hung-Chin Guthrie ,  Ming Jiang ,  Sue Siyang Zhang

IPC分类号： G11B5/127 ,  G11B5/187

CPC分类号： G11B5/1871 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular write head including a main pole and a trailing shield, the main pole being made of a diamond-like carbon (DLC) layer as hard mask and a rhodium (Rh) layer as shield gap, both DLC and Rh layers being CMP stop layers so as to avoid corner rounding and damage from chemical mechanical planarization (CMP) process, the DLC layer being removed by reactive ion etching (RIE) to create a trench, the trailing shield being deposited into the trench for self alignment.

摘要翻译： 包括主极和后屏蔽的垂直写头，主极由金刚石碳（DLC）层作为硬掩模和铑（Rh）层作为屏蔽间隙，DLC和Rh层都是CMP停止 层，以避免由化学机械平面化（CMP）工艺引起的角落圆角和损伤，通过反应离子蚀刻（RIE）去除DLC层以产生沟槽，后屏蔽层沉积到沟槽中用于自对准。

公开(公告)号：US20050239222A1

公开(公告)日：2005-10-27

申请号：US10831592

申请日：2004-04-23

申请人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

发明人： Hung-Chin Guthrie ,  Ming Jiang ,  Yeak-Chong Wong

IPC分类号： B24B5/00 ,  B24B37/04 ,  B24B47/02 ,  B24B49/03 ,  G01R31/26 ,  H01L21/66

CPC分类号： B24B49/03 ,  B24B37/042

摘要： During planarization of wafers, the thickness of a layer of a wafer is measured at a number of locations, after the wafer has been planarized by chemical mechanical polishing. The thickness measurements are used to automatically determine, from a center to edge profile model to which the measurements are fit, a parameter that controls chemical mechanical polishing, called “backside pressure.” Backside pressure is determined in some embodiments by a logic test based on the center-to-edge profile model, coefficient of determination R-square of the model, and current value of backside pressure. Note that a “backside pressure” set point is adjusted only if the fit of the measurements to the model is good, e.g. as indicated by R-square being greater than a predetermined limit. Next, the backside pressure that has been determined from the model is used in planarizing a subsequent wafer.

摘要翻译： 在晶片的平坦化期间，在通过化学机械抛光对晶片进行平面化之后，在多个位置测量晶片层的厚度。 厚度测量用于自动确定从测量结合到的中心到边缘轮廓模型，控制称为“背侧压力”的化学机械抛光的参数。 在一些实施例中，通过基于中心到边缘轮廓模型的逻辑测试，模型的确定系数R平方和背侧压力的当前值来确定背侧压力。 注意，仅当对模型的测量的拟合良好时才调整“背侧压力”设定点。 如R平方所示大于预定极限。 接下来，将从模型确定的背面压力用于平面化后续晶片。

公开(公告)号：US5957753A

公开(公告)日：1999-09-28

申请号：US915

申请日：1997-12-30

申请人： Ranga Komanduri ,  Ming Jiang

发明人： Ranga Komanduri ,  Ming Jiang

IPC分类号： B24B1/00 ,  B24B11/02 ,  B24B31/112 ,  B24B37/02 ,  F16C33/32 ,  B24B19/00

CPC分类号： F16C33/32 ,  B24B1/005 ,  B24B11/02 ,  B24B31/112 ,  B24B37/02

摘要： A methodology for conducting magnetic float polishing of magnetic materials. This is accomplished by isolating the magnetic workpiece from any appreciable magnetic induction and subsequently polishing the magnetic workpiece utilizing the action of a magnetic buoyancy levitational force with conventional magnetic float polishing apparatus.

摘要翻译： 磁性材料磁浮法研究方法。 这是通过将磁性工件与任何可感知的磁感应隔离并随后使用常规磁浮动抛光装置利用磁浮力悬浮力的作用来抛光磁性工件来实现的。

公开(公告)号：US5241007A

公开(公告)日：1993-08-31

申请号：US822280

申请日：1992-01-21

申请人： Charles C. Han ,  Manjun He ,  Yongming Liu ,  Yi Feng ,  Ming Jiang

发明人： Charles C. Han ,  Manjun He ,  Yongming Liu ,  Yi Feng ,  Ming Jiang

IPC分类号： C08L25/18

CPC分类号： C08L25/18

摘要： Fluorinated styrenes of the formula I; ##STR1## where R.sub.1 is a C.sub.1 -C.sub.6 alkyl and R.sub.2 is the repeating unit ##STR2## where x is zero or any positive integer, which are useful as compatibilizing and toughening agents for various polymers such as styrene, dienes (butadiene, isoprene, etc.) acrylates, polymethacrylates, polycarbonates, polyesters, polyamides, etc. Particularly preferred are p-(1,1,1,3,3,3-hexafluoro-2-hydroxy isopropyl)-.alpha.-methylstyrene, polymers thereof, block and random copolymers thereof and polymer blends incorporating the same.

摘要翻译： 式I的氟化苯乙烯; （I）其中R1是C1-C6烷基，R2是重复单元，其中x是零或任何正整数，其可用作各种聚合物如苯乙烯，二烯（丁二烯）的相容化和增韧剂 ，异戊二烯等）丙烯酸酯，聚甲基丙烯酸酯，聚碳酸酯，聚酯，聚酰胺等。特别优选的是对 - （1,1,1,3,3,3-六氟-2-羟基异丙基）-α-甲基苯乙烯，其聚合物 ，其嵌段和无规共聚物和掺入其的聚合物共混物。