公开(公告)号：US11934008B2

公开(公告)日：2024-03-19

申请号：US18083716

申请日：2022-12-19

Applicant: GlobalFoundries U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Kenneth J. Giewont ,  Karen Nummy

IPC: G02B6/12 ,  F21V8/00 ,  G02B6/122 ,  G02B6/14

CPC classification number: G02B6/1228 ,  G02B6/0046 ,  G02B6/1225 ,  G02B6/14 ,  G02B2006/12035 ,  G02B2006/1215 ,  G02B2006/12152

Abstract: Structures for an edge coupler and methods of forming a structure for an edge coupler. The structure includes a waveguide core over a dielectric layer, and a back-end-of-line stack over the waveguide core and the dielectric layer. The back-end-of-line stack includes an interlayer dielectric layer, a side edge, a first feature, a second feature, and a third feature laterally arranged between the first feature and the second feature. The first feature, the second feature, and the third feature are positioned on the interlayer dielectric layer adjacent to the side edge, and the third feature has an overlapping relationship with a tapered section of the waveguide core.

公开(公告)号：US11609393B1

公开(公告)日：2023-03-21

申请号：US17475689

申请日：2021-09-15

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur

IPC: G02B6/42

Abstract: Structures including an optical coupler and methods of fabricating a structure including an optical coupler. The structure includes a substrate, a first dielectric layer on the substrate, and an optical coupler having a first grating and a second grating. The first grating has a first plurality of segments positioned in a first level over the first dielectric layer. The second grating has a second plurality of segments positioned in a second level over the first dielectric layer. The second level differs in elevation above the first dielectric layer from the first level. The second plurality of segments are positioned in the second level to overlap with the first plurality of segments of the first grating, and the second plurality of segments comprise a metal. A second dielectric layer is positioned in a vertical direction between the first level and the second level.

公开(公告)号：US20220252784A1

公开(公告)日：2022-08-11

申请号：US17170203

申请日：2021-02-08

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alec Hammond ,  Yusheng Bian ,  Michal Rakowski ,  Won Suk Lee ,  Asif J. Chowdhury ,  Roderick A. Augur ,  Abdelsalam Aboketaf

IPC: G02B6/12 ,  G02B6/13 ,  G02B1/00

Abstract: Structures for a wavelength-division multiplexing filter and methods of forming a structure for a wavelength-division multiplexing filter. The structure includes a first slab having a first perimeter, a first waveguide core coupled to the first slab, and a plurality of second waveguide cores coupled to the first slab. A second slab is positioned to overlap with the first slab. The second slab includes a second perimeter and openings that are distributed inside the second perimeter. The openings of the second slab penetrate through the second slab.

公开(公告)号：US20220247148A1

公开(公告)日：2022-08-04

申请号：US17167201

申请日：2021-02-04

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/026 ,  H01S5/30 ,  H01S5/323

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US11378743B1

公开(公告)日：2022-07-05

申请号：US17146864

申请日：2021-01-12

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Kenneth J. Giewont ,  Karen Nummy ,  Edward Kiewra ,  Steven M. Shank

IPC: G02B6/122 ,  G02B6/34 ,  G02B6/136 ,  G02B6/12

Abstract: Structures including a grating coupler and methods of fabricating a structure including a grating coupler. The structure includes structure includes a dielectric layer on a substrate, a first waveguide core positioned in a first level over the dielectric layer, and a second waveguide core positioned in a second level over the dielectric layer. The second level differs in elevation above the dielectric layer from the first level. The first waveguide core includes a tapered section. The structure further includes a grating coupler having a plurality of segments positioned in the second level adjacent to the second waveguide core. The segments of the grating coupler and the tapered section of the first waveguide core are positioned in an overlapping arrangement.

公开(公告)号：US11315870B2

公开(公告)日：2022-04-26

申请号：US16197646

申请日：2018-11-21

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Il Goo Kim ,  Roderick A. Augur

IPC: H01L23/522 ,  H01L21/768 ,  H01L27/24 ,  H01L27/22

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to top electrode interconnect structures and methods of manufacture. The structure includes: a lower metallization feature; an upper metallization feature; a bottom electrode in direct contact with the lower metallization feature; one or more switching materials over the bottom electrode; a top electrode over the one or more switching materials; and a self-aligned via interconnection in contact with the top electrode and the upper metallization feature.

公开(公告)号：US11837851B2

公开(公告)日：2023-12-05

申请号：US17931933

申请日：2022-09-14

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur ,  Michal Rakowski ,  Kenneth J. Giewont ,  Karen A. Nummy

IPC: H01S5/00 ,  H01S5/20 ,  H01S5/30 ,  H01S5/223 ,  H01S5/026 ,  H01S5/323 ,  H01S5/02

CPC classification number: H01S5/2018 ,  H01S5/20 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3013 ,  H01S5/021 ,  H01S5/026 ,  H01S5/3054 ,  H01S5/32333

Abstract: A laser structure, including: a dielectric matrix formed of a first material; a laser source formed within the dielectric matrix and formed of a semiconductor material; and a plurality of side confining features formed within the dielectric matrix and extending parallel to and along a length of the laser source. The plurality of side confining features are formed of the semiconductor material.

公开(公告)号：US11810853B2

公开(公告)日：2023-11-07

申请号：US17702255

申请日：2022-03-23

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Il Goo Kim ,  Roderick A. Augur

IPC: H01L23/522 ,  H01L21/768 ,  H10B61/00 ,  H10B63/00

CPC classification number: H01L23/5226 ,  H01L21/76897 ,  H10B61/00 ,  H10B63/84

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to top electrode interconnect structures and methods of manufacture. The structure includes: a lower metallization feature; an upper metallization feature; a bottom electrode in direct contact with the lower metallization feature; one or more switching materials over the bottom electrode; a top electrode over the one or more switching materials; and a self-aligned via interconnection in contact with the top electrode and the upper metallization feature.

公开(公告)号：US11747560B2

公开(公告)日：2023-09-05

申请号：US17411122

申请日：2021-08-25

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Yusheng Bian ,  Roderick A. Augur

IPC: G02B6/122 ,  G02B6/125 ,  G02B6/12 ,  G02B6/136

CPC classification number: G02B6/1228 ,  G02B6/125 ,  G02B6/136 ,  G02B2006/12061

Abstract: Disclosed is a photonic integrated circuit (PIC) structure including: a first waveguide with a first main body and a first end portion, which is tapered; and a second waveguide with a second main body and a second end portion, which has two branch waveguides that are positioned adjacent to opposing sides, respectively, of the first end portion of the first waveguide and that branch out from the second main body, thereby forming a V, U or similar shape. The arrangement of the two branch waveguides of the second end portion of the second waveguide relative to the tapered first end portion of the first waveguide allows for mode matching conditions to be met at multiple locations at the interface between the waveguides, thereby creating multiple signal paths between the waveguides and effectively reducing the light signal power density along any one path to prevent or at least minimize any power-induced damage.

公开(公告)号：US11699650B2

公开(公告)日：2023-07-11

申请号：US17151346

申请日：2021-01-18

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Alamgir M. Arif ,  Sunil K. Singh ,  Dewei Xu ,  Seung-Yeop Kook ,  Roderick A. Augur

IPC: H01L23/522 ,  H01L49/02

CPC classification number: H01L23/5223 ,  H01L23/5226 ,  H01L28/60

Abstract: Embodiments of the disclosure provide an integrated circuit (IC) structure. With capacitor electrodes in different ILD layers. The structure includes a first inter-level dielectric (ILD) layer having a top surface, a first vertical electrode within the first ILD layer, a capacitor dielectric film on a top surface of the first vertical electrode, a second ILD layer over the first ILD layer, and a second vertical electrode within the second ILD layer and on the capacitor dielectric film. The capacitor dielectric film is vertically between the first vertical electrode and the second vertical electrode.