公开(公告)号：US20090152998A1

公开(公告)日：2009-06-18

申请号：US12266471

申请日：2008-11-06

申请人： Nicolas Abele ,  Pascal Ancey ,  Alexandre Talbot ,  Karim Segueni ,  Guillaume Bouche ,  Thomas Skotnicki ,  Stephane Monfray ,  Fabrice Cassett

发明人： Nicolas Abele ,  Pascal Ancey ,  Alexandre Talbot ,  Karim Segueni ,  Guillaume Bouche ,  Thomas Skotnicki ,  Stephane Monfray ,  Fabrice Cassett

IPC分类号： H01L41/00 ,  H01L21/20

CPC分类号： H03H9/2405 ,  H03H3/0072 ,  H03H2009/02496

摘要： A microresonator comprising a single-crystal silicon resonant element and at least one activation electrode placed close to the resonant element, in which the resonant element is placed in an opening of a semiconductor layer covering a substrate, the activation electrode being formed in the semiconductor layer and being level at the opening.

摘要翻译： 一种微谐振器，包括单晶硅谐振元件和靠近谐振元件放置的至少一个激活电极，其中谐振元件放置在覆盖衬底的半导体层的开口中，激活电极形成在半导体层中 并在开幕式的水平。

公开(公告)号：US20070087513A1

公开(公告)日：2007-04-19

申请号：US11512731

申请日：2006-08-30

申请人： Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

发明人： Guillaume Bouche ,  Fabrice Casset ,  Pascal Ancey

IPC分类号： H01L21/76 ,  H01L21/20

CPC分类号： H01G5/16 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/4913 ,  Y10T29/49139 ,  Y10T29/49147 ,  Y10T29/49165 ,  Y10T83/0476 ,  Y10T83/0505 ,  Y10T83/051 ,  Y10T83/0577

摘要： A method for forming a variable capacitor including a conductive strip covering the inside of a cavity, and a flexible conductive membrane placed above the cavity, the cavity being formed according to the steps of: forming a recess in the substrate; placing a malleable material in the recess; having a stamp bear against the substrate at the level of the recess to give the upper part of the malleable material a desired shape; hardening the malleable material; and removing the stamp.

摘要翻译： 一种形成可变电容器的方法，所述可变电容器包括覆盖空腔内部的导电条和位于所述空腔上方的柔性导电膜，所述空腔根据以下步骤形成：在所述基板中形成凹部; 将可延展材料放置在凹槽中; 在凹部的水平处具有抵靠基板的印模，以使可延展材料的上部具有期望的形状; 硬化可延展材料; 并移除邮票。

公开(公告)号：US09450074B1

公开(公告)日：2016-09-20

申请号：US13194210

申请日：2011-07-29

申请人： Fanling Hsu Yang ,  Timothy K. McGuire ,  Sudarsan Uppili ,  Guillaume Bouche

发明人： Fanling Hsu Yang ,  Timothy K. McGuire ,  Sudarsan Uppili ,  Guillaume Bouche

IPC分类号： H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC分类号： H01L29/66681 ,  H01L29/0692 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66659 ,  H01L29/7816 ,  H01L29/7824 ,  H01L29/7835

摘要： Semiconductor devices, such as laterally diffused metal oxide semiconductor (LDMOS) devices, are described that have a field plate connected to a gate of the device. In one or more implementations, the semiconductor devices include a substrate having a source region of a first conductivity type and a drain region of the first conductivity type. A gate is positioned over the surface and between the source region and the drain region. The gate is configured to receive a voltage so that a conduction region may be formed at least partially below the gate to allow majority carriers to travel between the source region and the drain region. The device also includes a field plate at least partially positioned over and connected to the gate. The field plate is configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.

摘要翻译： 描述了半导体器件，例如横向扩散的金属氧化物半导体（LDMOS）器件，其具有连接到器件的栅极的场板。 在一个或多个实施方案中，半导体器件包括具有第一导电类型的源极区和第一导电类型的漏极区的衬底。 栅极位于表面上并且在源极区域和漏极区域之间。 栅极被配置为接收电压，使得可以至少部分地在栅极下方形成导电区域，以允许多数载流子在源极区域和漏极区域之间行进。 该装置还包括至少部分地定位在栅极上并连接到栅极的场板。 场板被配置为当电压施加到栅极时，使在源极区域和漏极区域之间产生的电场成形。

公开(公告)号：US09171916B1

公开(公告)日：2015-10-27

申请号：US13272301

申请日：2011-10-13

申请人： David L. Snyder ,  Sudarsan Uppili ,  Guillaume Bouche

发明人： David L. Snyder ,  Sudarsan Uppili ,  Guillaume Bouche

IPC分类号： H01L29/40 ,  H01L21/8238

CPC分类号： H01L29/402 ,  H01L21/82385 ,  H01L29/063 ,  H01L29/1095 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7816 ,  H01L29/7835

摘要： Semiconductor devices, such as LDMOS devices, are described that include an interlayer-dielectric layer (ILD) region having a thickness of at least two and one half (2.5) microns to increase the maximum breakdown voltage. In one or more implementations, the semiconductor devices include a substrate having a source region and a drain region formed proximate to a surface of the substrate. A gate is positioned over the surface and between the source region and the drain region. An ILD region having a thickness of at least two and one half (2.5) microns is formed over the surface and the gate of the device. The device also includes one or more field plates configured to shape an electrical field generated between the source region and the drain region when a voltage is applied to the gate.

摘要翻译： 描述了诸如LDMOS器件的半导体器件，其包括具有至少两个和一个（2.5）微米厚度的层间介电层（ILD）区域以增加最大击穿电压。 在一个或多个实施方案中，半导体器件包括具有靠近衬底表面形成的源区和漏区的衬底。 栅极位于表面上并且在源极区域和漏极区域之间。 在器件的表面和栅极上形成具有至少两个半（2.5）微米厚度的ILD区域。 该装置还包括一个或多个场板，其配置成当电压施加到栅极时，使在源极区域和漏极区域之间产生的电场成形。

公开(公告)号：US07960200B2

公开(公告)日：2011-06-14

申请号：US11789578

申请日：2007-04-24

申请人： Guillaume Bouche ,  Ralph N. Wall

发明人： Guillaume Bouche ,  Ralph N. Wall

IPC分类号： H01L21/00

CPC分类号： B81C1/0015 ,  B81B2201/014 ,  B81B2203/0384 ,  B81C1/00333 ,  B81C2201/0107 ,  B81C2201/0157 ,  B81C2203/0118

摘要： In accordance with the present invention, accurate and easily controlled sloped walls may be formed using AlN and preferably a heated TMAH for such purpose as the fabrication of MEMS devices, wafer level packaging and fabrication of fluidic devices. Various embodiments are disclosed.

摘要翻译： 根据本发明，可以使用AlN和优选加热的TMAH来形成精确且易于控制的倾斜壁，用于MEMS器件的制造，晶片级封装和流体器件的制造。 公开了各种实施例。

公开(公告)号：US07646265B2

公开(公告)日：2010-01-12

申请号：US11734188

申请日：2007-04-11

申请人： Carlton Stuebing ,  Guillaume Bouche

发明人： Carlton Stuebing ,  Guillaume Bouche

IPC分类号： H03H9/00

CPC分类号： H03H9/605 ,  H03H9/542

摘要： Embodiments of the present invention provide systems, devices and methods for improving both the bandwidth of a BAW resonator bandpass filter and the suppression of out-of-band frequencies above the passband. In various embodiments of the invention, blocker inductors are located in series between the filter input and the filter output to realize both bandwidth enhancement and improved out-of-band frequency rejection. For example, a first blocker inductor may be located at the input and a second blocker inductor may be located at the output of a BAW resonator bandpass filter.

摘要翻译： 本发明的实施例提供用于改善BAW谐振器带通滤波器的带宽和抑制通带以上的带外频率的系统，装置和方法。 在本发明的各种实施例中，阻塞电感器串联在滤波器输入和滤波器输出之间，以实现带宽增强和改进的带外频率抑制。 例如，第一阻塞电感器可以位于输入端，并且第二阻塞电感器可以位于BAW谐振器带通滤波器的输出处。

公开(公告)号：US07567024B2

公开(公告)日：2009-07-28

申请号：US11862020

申请日：2007-09-26

申请人： Ralph N. Wall ,  Guillaume Bouche ,  Edward Martin Godshalk ,  Rick D. Lutz ,  Garth Sundberg

发明人： Ralph N. Wall ,  Guillaume Bouche ,  Edward Martin Godshalk ,  Rick D. Lutz ,  Garth Sundberg

IPC分类号： H01L41/08

CPC分类号： H03H9/132

摘要： Methods of contacting the top layer in a BAW device by depositing a metal layer over the BAW device, patterning the metal layer so that the metal layer extends over and contacts the top electrode layer of the BAW device only at a plurality of spaced apart locations adjacent the periphery of the active resonator area, and has a common region laterally displaced from the top and bottom electrodes and electrically interconnecting the parts of the metal layer extending over and contacting the top electrode of the BAW device at the plurality of spaced apart locations.

摘要翻译： 通过在BAW器件上沉积金属层来接触BAW器件中的顶层的方法，使金属层图案化，使得金属层仅在相邻的多个间隔开的位置处延伸并接触BAW器件的顶部电极层 有源谐振器区域的周边，并且具有从顶部和底部电极横向移位的公共区域，并且电连接在多个间隔开的位置处延伸并接触BAW装置的顶部电极的金属层的部分。

公开(公告)号：US20090079302A1

公开(公告)日：2009-03-26

申请号：US11862020

申请日：2007-09-26

申请人： Ralph N. Wall ,  Guillaume Bouche ,  Edward Martin Godshalk ,  Rick D. Lutz ,  Garth Sundberg

发明人： Ralph N. Wall ,  Guillaume Bouche ,  Edward Martin Godshalk ,  Rick D. Lutz ,  Garth Sundberg

IPC分类号： H01L41/047 ,  H01L41/08

CPC分类号： H03H9/132

摘要： Methods of contacting the top layer in a BAW device by depositing a metal layer over the BAW device, patterning the metal layer so that the metal layer extends over and contacts the top electrode layer of the BAW device only at a plurality of spaced apart locations adjacent the periphery of the active resonator area, and has a common region laterally displaced from the top and bottom electrodes and electrically interconnecting the parts of the metal layer extending over and contacting the top electrode of the BAW device at the plurality of spaced apart locations.

摘要翻译： 通过在BAW器件上沉积金属层来接触BAW器件中的顶层的方法，使金属层图案化，使得金属层仅在相邻的多个间隔开的位置处延伸并接触BAW器件的顶部电极层 有源谐振器区域的周边，并且具有从顶部和底部电极横向移位的公共区域，并且电连接在多个间隔开的位置处延伸并接触BAW装置的顶部电极的金属层的部分。

公开(公告)号：US20050206243A1

公开(公告)日：2005-09-22

申请号：US11050482

申请日：2005-02-03

申请人： Guillaume Bouche

发明人： Guillaume Bouche

IPC分类号： B81B3/00 ,  H01H1/00 ,  H01H5/18 ,  H01H50/00 ,  H01H57/00 ,  H01H59/00

CPC分类号： B81B3/0054 ,  B81B2201/016 ,  H01G5/16 ,  H01H1/0036 ,  H01H50/005 ,  H01H57/00 ,  H01H59/0009 ,  H01H2001/0042 ,  H01H2057/006 ,  H01H2061/006 ,  Y10T307/74

摘要： A microelectromechanical system includes separate conducting elements. An electromechanically deformable element can be switched between a first stable position and a second stable position. Contact elements allow for electrical continuity to be established between the separate conducting elements. Switch control elements ensure that the first deformable element switches so as to establish electrical continuity between the separate conducting elements in the second stable position, by contact between the contact elements, and to break electrical continuity by separating the contact elements in the first stable position. The separate conducting elements and the contact elements are carried by the deformable element.

摘要翻译： 微机电系统包括单独的导电元件。 机电可变形元件可以在第一稳定位置和第二稳定位置之间切换。 接触元件允许在单独的导电元件之间建立电连续性。 开关控制元件确保第一可变形元件切换以便通过接触元件之间的接触在第二稳定位置中的分开的导电元件之间建立电连续性，并且通过在第一稳定位置分离接触元件来断开电连续性。 单独的导电元件和接触元件由可变形元件承载。

公开(公告)号：US09209091B1

公开(公告)日：2015-12-08

申请号：US13198833

申请日：2011-08-05

申请人： David Harper ,  Sudarsan Uppili ,  Fanling Hsu Yang ,  David L. Snyder ,  Christopher S. Blair ,  Guillaume Bouche

发明人： David Harper ,  Sudarsan Uppili ,  Fanling Hsu Yang ,  David L. Snyder ,  Christopher S. Blair ,  Guillaume Bouche

IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L27/12

CPC分类号： H01L21/84 ,  H01L27/1211

摘要： A semiconductor device is described that includes a first electrical circuit and a second electrical circuit formed on a semiconductor on insulator wafer. The semiconductor on insulator wafer has a layer of semiconducting material formed over a buried layer of insulating material formed over a supporting layer of material. A wide deep trench is formed in the semiconductor on insulator wafer to galvanically isolate the first electrical circuit from the second electrical circuit. The first electrical circuit and the second electrical circuit are coupled together for exchanging energy between the galvanically isolated electrical circuits.

摘要翻译： 描述了包括形成在绝缘体上半导体晶片上的第一电路和第二电路的半导体器件。 绝缘体上半导体晶片具有形成在绝缘材料的掩埋层上的半导体材料层，其形成在材料的支撑层上。 在半导体绝缘体晶片上形成宽的深沟槽，以将第一电路与第二电路电隔离。 第一电路和第二电路耦合在一起，用于在电隔离的电路之间交换能量。