公开(公告)号：US10049738B2

公开(公告)日：2018-08-14

申请号：US15536602

申请日：2014-12-17

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  R. Stanley Williams

IPC: G11C11/00 ,  G11C13/00 ,  H01L45/00

Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.

公开(公告)号：US20170317646A1

公开(公告)日：2017-11-02

申请号：US15141410

申请日：2016-04-28

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Suhas Kumar ,  John Paul Strachan ,  Gary Gibson ,  R. Stanley Williams

IPC: H03B7/06

CPC classification number: H03B7/06 ,  H03B5/04 ,  H03K19/20

Abstract: In some examples, a device includes a nano-scale oscillator that exhibits chaotic oscillation responsive to a control input to the nano-scale oscillator, where the control input including a tunable input parameter.

公开(公告)号：US20170271009A1

公开(公告)日：2017-09-21

申请号：US15329845

申请日：2015-01-28

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Ning Ge ,  John Paul Strachan ,  Gary Gibson ,  Warren Jackson

IPC: G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/0023 ,  G11C13/003 ,  G11C13/004 ,  G11C2213/73 ,  G11C2213/74 ,  G11C2213/76

Abstract: In one example, a volatile selector is switched from a low conduction state to a first high conduction state with a first voltage level and then the first voltage level is removed to activate a relaxation time for the volatile selector. The relaxation time is defined as the time the first volatile selector transitions from the high conduction state back to the low conduction state. The volatile selector is switched with a second voltage level of opposite polarity to the first voltage level to significantly reduce the relaxation time of the volatile selector.

公开(公告)号：US09767901B1

公开(公告)日：2017-09-19

申请号：US15245607

申请日：2016-08-24

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Amit S. Sharma ,  Gary Gibson ,  Naveen Muralimanohar ,  Martin Foltin ,  Greg Astfalk

IPC: G11C11/00 ,  G11C13/00

CPC classification number: G11C13/0069 ,  G11C13/003 ,  G11C13/0033 ,  G11C13/0097 ,  G11C2013/0073 ,  G11C2213/15 ,  G11C2213/72 ,  G11C2213/74 ,  G11C2213/76

Abstract: An integrated circuit is provided. In an example, the integrated circuit includes a first address line, a selector device electrically coupled to the first address lines, and a memory device electrically coupled between the selector device and a second address line. The selector device has a first I-V response in a first current direction and a second I-V response in a second current direction that is different from the first I-V response.

公开(公告)号：US09716224B2

公开(公告)日：2017-07-25

申请号：US15114973

申请日：2014-03-07

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  Richard Henze ,  Warren Jackson ,  Yoocham Jeon

IPC: G11C11/00 ,  H01L45/00 ,  G11C13/00 ,  H01L27/24

CPC classification number: H01L45/1293 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0095 ,  H01L27/2418 ,  H01L45/04 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146

Abstract: A memristor device with a thermally-insulating cladding includes a first electrode, a second electrode, a memristor, and a thermally-insulating cladding. The memristor is coupled in electrical series between the first electrode and the second electrode. The thermally-insulating cladding surrounds at least a portion of the memristor.

公开(公告)号：US20180336947A1

公开(公告)日：2018-11-22

申请号：US16048502

申请日：2018-07-30

Applicant: HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

Inventor： Gary Gibson ,  R. Stanley Williams

IPC: G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C2013/008 ,  G11C2213/15 ,  G11C2213/52 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/128 ,  H01L45/146

Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.

公开(公告)号：US20170372782A1

公开(公告)日：2017-12-28

申请号：US15536602

申请日：2014-12-17

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Gary Gibson ,  R. Stanley Williams

IPC: G11C13/00 ,  H01L45/00

CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C2013/008 ,  G11C2213/15 ,  G11C2213/52 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/128 ,  H01L45/146

Abstract: A memristor includes a bottom electrode, a top electrode, and an active region disposed therebetween. The active region has an electrically conducting filament in an electrically insulating medium, extending between the bottom electrode and the top electrode. The memristor further includes a temperature gradient element for controlling switching.

公开(公告)号：US20170110515A1

公开(公告)日：2017-04-20

申请号：US15128244

申请日：2014-04-10

Applicant: Hewlett Packard Enterprise Development LP

Inventor： Jianhua Yang ,  Gary Gibson ,  Zhiyong Li

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

CPC classification number: H01L27/2481 ,  G11C13/004 ,  G11C13/0069 ,  H01L27/2409 ,  H01L27/2418 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A 1-Selector n-Resistor memristive device includes a first electrode, a selector, a plurality of memristors, and a plurality of second electrodes. The selector is coupled to the first electrode via a first interface of the selector. Each memristor is coupled to a second interface of the selector via a first interface of each memristor. Each second electrode is coupled to one of the memristors via a second interface of each memristor.