Display apparatuses and methods of operating the same
    21.
    发明申请
    Display apparatuses and methods of operating the same 有权
    显示装置及其操作方法

    公开(公告)号:US20100149138A1

    公开(公告)日:2010-06-17

    申请号:US12458312

    申请日:2009-07-08

    IPC分类号: G09G5/00 G09G3/36

    摘要: Provided are display apparatuses and methods of operating the same. In a display apparatus, a display image may be continuously held for longer than about 10 msec after the power of the display panel is turned off. The display apparatus may indicate a liquid crystal display (LCD) apparatus including an oxide thin film transistor (TFT). Off leakage current of the oxide TFT may be less than about 10−14 A.

    摘要翻译: 提供了显示装置及其操作方法。 在显示装置中,在显示面板的电源关闭之后,显示图像可以连续保持超过约10毫秒。 显示装置可以指示包括氧化物薄膜晶体管(TFT)的液晶显示器(LCD)装置。 氧化物TFT的漏电流可以小于约10-14A。

    P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element
    22.
    发明授权
    P-type semiconductor carbon nanotube using halogen element and fullerene or alkali element 有权
    使用卤素元素和富勒烯或碱元素的P型半导体碳纳米管

    公开(公告)号:US07501650B2

    公开(公告)日:2009-03-10

    申请号:US11202185

    申请日:2005-08-12

    IPC分类号: H01L29/10

    摘要: A p-type semiconductor carbon nanotube and a method of manufacturing the same are provided. The p-type semiconductor carbon nanotube includes a carbon nanotube; and a halogen element that is attached to an inner wall of the carbon nanotube and accepts electrons from the carbon nanotube to achieve p-type doping of the carbon nanotube. The p-type semiconductor carbon nanotube is stable at high temperatures and can maintain intrinsic good electrical conductivity of the carbon nanotube. The p-type semiconductor carbon nanotube can be relatively easily obtained using a conventional method of manufacturing a carbon nanotube, thereby significantly broadening the range of application of the carbon nanotube to electronic devices.

    摘要翻译: 提供了p型半导体碳纳米管及其制造方法。 p型半导体碳纳米管包括碳纳米管; 以及附着在碳纳米管的内壁上并从碳纳米管接收电子以实现碳纳米管的p型掺杂的卤素元素。 p型半导体碳纳米管在高温下是稳定的并且可以保持碳纳米管的本征良好的导电性。 可以使用常规的碳纳米管制造方法相对容易地获得p型半导体碳纳米管,从而显着拓宽碳纳米管应用于电子器件的范围。