公开(公告)号：US07355158B2

公开(公告)日：2008-04-08

申请号：US11826926

申请日：2007-07-19

申请人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

发明人： Ikuko Inoue ,  Hirofumi Yamashita ,  Hidetoshi Nozaki

IPC分类号： H01L21/00 ,  H01L27/00

CPC分类号： H01L27/14609 ,  H01L27/14601 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14645 ,  H01L27/14689

摘要： The invention is regarding to solid-state imaging device. A solid-state imaging device consistent with the present invention includes, a plurality of unit cells on a semiconductor substrate of a first conductivity type, each unit cell including a photoelectric conversion unit comprising a photodiode having a diffusion layer of a second conductivity type and a signal scanning circuit unit; a trench isolation region for isolating the photoelectric conversion unit from the signal scanning circuit unit, the trench isolation region being formed in the semiconductor substrate;a first element-isolating diffusion layer of the first conductivity type formed under a bottom face of the trench isolation region down to a position deeper than the diffusion layer of the photodiode from the surface of the semiconductor substrate.

摘要翻译： 本发明涉及固态成像装置。 根据本发明的固态成像装置包括：第一导电类型的半导体衬底上的多个单元，每个单元包括光电转换单元，该光电转换单元包括具有第二导电类型的扩散层的光电二极管和 信号扫描电路单元; 沟槽隔离区域，用于将光电转换单元与信号扫描电路单元隔离，沟槽隔离区形成在半导体衬底中; 第一导电类型的第一元件隔离扩散层形成在沟槽隔离区的底面下方到比半导体衬底的表面的光电二极管的扩散层更深的位置。

公开(公告)号：US20060076588A1

公开(公告)日：2006-04-13

申请号：US10963980

申请日：2004-10-12

申请人： Hidetoshi Nozaki

发明人： Hidetoshi Nozaki

IPC分类号： H01L31/113

CPC分类号： H01L27/14632 ,  H01L27/14643

摘要： In a photodiode used in a pixel of an image sensor, the area of interface between an N-type region and a P-type region is increased, such as through the use of an interstitial P+-type region or an interstitial P-type region. By increasing the interface area, greater well capacity can be attained. Further, this also enhances depletion of the photodiode. By changing the shape of the N-type layer, an increase in the area of the interface between the P-type region and N-type layer can be attained. While the types of shapes used for the N-type layer are many, the present invention is directed towards a photodiode with an increased interface area between the P-type and N-type regions.

公开(公告)号：US20050274874A1

公开(公告)日：2005-12-15

申请号：US10867020

申请日：2004-06-14

申请人： Hidetoshi Nozaki ,  Sohei Manabe

发明人： Hidetoshi Nozaki ,  Sohei Manabe

IPC分类号： H01L27/146 ,  H01L27/00

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： The present disclosure introduces a simple method for reducing the capacitance of the floating diffusion node of a CMOS image sensor and consequently improving the image sensor's sensitivity. While reducing parasitic capacitances such as the capacitance between the transfer gate and the floating node, the proposed device layouts, in which the channel width of the detection section is different from the channel width of the photoelectric conversion element, demand no more than what is required for the fabrication of the traditional layouts.

摘要翻译： 本公开引入了用于减小CMOS图像传感器的浮动扩散节点的电容并因此提高图像传感器灵敏度的简单方法。 在降低诸如传输门和浮动节点之间的电容的寄生电容的同时，所提出的器件布局（其中检测部分的沟道宽度与光电转换元件的沟道宽度不同）仅需要所需的 用于制作传统布局。

公开(公告)号：US06642087B2

公开(公告)日：2003-11-04

申请号：US10339395

申请日：2003-01-10

申请人： Hidetoshi Nozaki ,  Ikuko Inoue ,  Hirofumi Yamashita

发明人： Hidetoshi Nozaki ,  Ikuko Inoue ,  Hirofumi Yamashita

IPC分类号： H01L2100

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14654

摘要： A readout gate electrode is selectively formed on a silicon substrate. An N-type drain region is formed at one end of the readout gate electrode, and an N-type signal storage region is formed at the other end thereof. A P+-type surface shield region is selectively epitaxial-grown on the signal storage region, and a silicide block layer is formed on the surface shield region to cover at least part of the signal storage region. A Ti silicide film is selective epitaxial-grown on the drain region.

摘要翻译： 读取栅电极选择性地形成在硅衬底上。 在读出栅电极的一端形成N型漏区，在其另一端形成N型信号存储区。 在信号存储区域选择性地外延生长P +型表面屏蔽区域，并且在表面屏蔽区域上形成硅化物阻挡层以覆盖信号存储区域的至少一部分。 在该漏极区域上选择性地外延生长Ti硅化物膜。

公开(公告)号：US06441411B2

公开(公告)日：2002-08-27

申请号：US09728123

申请日：2000-12-04

申请人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

发明人： Hidetoshi Nozaki ,  Hirofumi Yamashita ,  Hisanori Ihara ,  Tetsuya Yamaguchi ,  Ikuko Inoue

IPC分类号： H01L27146

CPC分类号： H01L27/14643

摘要： A solid-state image sensor comprises a semiconductor substrate, a photoelectric conversion portion formed above the semiconductor substrate, and noise cancelers each formed, adjacent to the photoelectric conversion portion, on the semiconductor substrate through an insulating film, for removing noise of a signal read from the photoelectric conversion portion, wherein the semiconductor substrate has a conductive type opposite to a conductive type of a charge of the signal, and has a first region where concentration of impurities for determining the conductive type is high and a second region where concentration of the impurities on the first region is low.

摘要翻译： 固态图像传感器包括半导体衬底，形成在半导体衬底上方的光电转换部分和与光电转换部分相邻形成的噪声抵消器，其通过绝缘膜在半导体衬底上，用于去除读取的信号的噪声 从所述光电转换部分，其中所述半导体衬底具有与所述信号的电荷的导电类型相反的导电类型，并且具有用于确定所述导电类型的杂质浓度高的第一区域和所述第二区域， 第一区域上的杂质低。

公开(公告)号：US06215139B1

公开(公告)日：2001-04-10

申请号：US09129697

申请日：1998-08-05

申请人： Yoshinori Iida ,  Hidetoshi Nozaki

发明人： Yoshinori Iida ,  Hidetoshi Nozaki

IPC分类号： H01L31062

CPC分类号： H01L27/14683 ,  H01L27/14609

摘要： An amplifying solid-state image sensor includes a semiconductor substrate, and a plurality of unit pixels arranged on the semiconductor substrate in a two-dimensional manner, in which each of the plurality of unit pixels includes a photodiode for performing the photoelectric conversion, a storage diode for storing electric signal charge obtained by the photodiode, an amplifying transistor for amplifying the electric signal charge stored in the storage diode, and a signal reading section for reading a signal voltage from the amplifying transistor, and in which each of the plurality of unit pixels has a first active region and a second active region in which the second active region has the same conductivity type as that of the semiconductor substrate and an impurity concentration higher than that of the semiconductor substrate, the photodiode in each of the unit pixels is formed in the first active region, and the amplifying transistor is formed in the second region. With this configuration, it is preferable the photodiode has near a surface thereof a pinned photodiode structure in which a photodiode surface high-concentrated impurity region is formed.

摘要翻译： 放大固态图像传感器包括半导体衬底和以二维方式布置在半导体衬底上的多个单位像素，其中多个单位像素中的每一个包括用于进行光电转换的光电二极管，存储器 用于存储由光电二极管获得的电信号电荷的二极管，用于放大存储在存储二极管中的电信号电荷的放大晶体管，以及用于从放大晶体管读取信号电压的信号读取部分，其中多个单元 像素具有第一有源区和第二有源区，其中第二有源区具有与半导体衬底的导电类型相同的导电类型，并且杂质浓度高于半导体衬底的杂质浓度，形成每个单位像素中的光电二极管 在第一有源区中，放大晶体管形成在第二区域中。 根据该结构，光电二极管的表面附近形成有光电二极管表面的高浓度杂质区域的钉扎光电二极管结构，

公开(公告)号：US07825966B2

公开(公告)日：2010-11-02

申请号：US11872521

申请日：2007-10-15

申请人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih (Dyson) Tai ,  Howard M. Rhodes

发明人： Sohei Manabe ,  Ashish Shah ,  Sasidhar Saladi ,  William Qian ,  Hidetoshi Nozaki ,  Nagaraja Satyadev ,  Hsin-Chih (Dyson) Tai ,  Howard M. Rhodes

IPC分类号： H04N5/335

CPC分类号： H04N5/3592 ,  H04N5/2355 ,  H04N5/3535 ,  H04N5/35554 ,  H04N5/37457

摘要： An image sensor has at least two photodiodes in each unit pixel. A high dynamic range is achieved by selecting different exposure times for the photodiodes. Additionally, blooming is reduced. The readout timing cycle is chosen so that the short exposure time photodiodes act as drains for excess charge overflowing from the long exposure time photodiodes. To improve draining of excess charge, the arrangement of photodiodes may be further selected so that long exposure time photodiodes are neighbored along vertical and horizontal directions by short exposure time photodiodes. A micro-lens array may also be provided in which light is preferentially coupled to the long exposure time photodiodes to improve sensitivity.

摘要翻译： 图像传感器在每个单位像素中具有至少两个光电二极管。 通过为光电二极管选择不同的曝光时间来实现高动态范围。 另外，开花减少。 选择读出定时周期，使得短曝光时间光电二极管充当从长曝光时间光电二极管溢出的过量电荷的漏极。 为了改善过剩电荷的排出，可以进一步选择光电二极管的布置，使得长曝光时间光电二极管通过短曝光时间光电二极管沿垂直和水平方向相邻。 还可以提供微透镜阵列，其中光优先地耦合到长曝光时间光电二极管以提高灵敏度。

公开(公告)号：US07825444B2

公开(公告)日：2010-11-02

申请号：US12690024

申请日：2010-01-19

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

IPC分类号： H01L31/062

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

公开(公告)号：US07666703B2

公开(公告)日：2010-02-23

申请号：US11036647

申请日：2005-01-14

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14643 ,  H01L31/0288

摘要： An active pixel using a transfer gate that has a polysilicon gate doped with indium. The pixel includes a photosensitive element formed in a semiconductor substrate and an n-type floating node formed in the semiconductor substrate. An n-channel transfer transistor having a transfer gate is formed between the floating node and the photosensitive element. The pixel substrate has a laterally doping gradient doped with an indium dopant.

摘要翻译： 使用具有掺杂有铟的多晶硅栅极的传输栅极的有源像素。 像素包括形成在半导体衬底中的感光元件和形成在半导体衬底中的n型浮动节点。 在浮动节点和感光元件之间形成具有传输门的n沟道传输晶体管。 像素衬底具有掺杂有铟掺杂剂的横向掺杂梯度。

公开(公告)号：US20090236498A1

公开(公告)日：2009-09-24

申请号：US12054296

申请日：2008-03-24

申请人： Satyadev Nagaraja ,  Hidetoshi Nozaki

发明人： Satyadev Nagaraja ,  Hidetoshi Nozaki

IPC分类号： H01L27/00 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14612 ,  H01L27/14689 ,  H01L29/42368

摘要： A light sensor cell includes a photosensitive element, a floating diffusion region, and a gate oxide disposed between the photosensitive element and the floating diffusion region. The gate oxide has a non-uniform thickness, with a greater thickness near the photosensitive element and a lesser thickness near the floating diffusion region. A transfer gate is disposed on the gate oxide. The transfer gate has a non-uniform threshold voltage, with a greater threshold voltage near the photosensitive element and a lesser threshold voltage near the floating diffusion region.

摘要翻译： 光传感器单元包括感光元件，浮动扩散区域和设置在感光元件和浮动扩散区域之间的栅极氧化物。 栅极氧化物具有不均匀的厚度，在感光元件附近具有更大的厚度，并且在浮动扩散区附近具有较小的厚度。 传输栅极设置在栅极氧化物上。 传输门具有不均匀的阈值电压，在感光元件附近具有较大的阈值电压，并且在浮动扩散区附近具有较小的阈值电压。