公开(公告)号：US09780205B2

公开(公告)日：2017-10-03

申请号：US15104332

申请日：2014-08-04

申请人： Jun Saito ,  Hirokazu Fujiwara ,  Tomoharu Ikeda ,  Yukihiko Watanabe ,  Toshimasa Yamamoto

发明人： Jun Saito ,  Hirokazu Fujiwara ,  Tomoharu Ikeda ,  Yukihiko Watanabe ,  Toshimasa Yamamoto

IPC分类号： H01L29/78 ,  H01L21/761 ,  H01L29/06 ,  H01L29/16 ,  H01L29/66 ,  H01L21/04

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/761 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7813

摘要： A technique disclosed herein improves a voltage resistance of an insulated gate type semiconductor device. A provided method is a method for manufacturing an insulated gate type switching device configured to switch between a front surface electrode and a rear surface electrode. The method includes implanting a first kind of second conductivity type impurities to bottom surfaces of gate trenches and diffusing the implanted first kind of second conductivity type impurities, and implanting a second kind of second conductivity type impurities to the bottom surfaces of the circumferential trenches and diffusing the implanted second kind of second conductivity type impurities.

公开(公告)号：US08164100B2

公开(公告)日：2012-04-24

申请号：US12338151

申请日：2008-12-18

申请人： Hirokazu Fujiwara ,  Masaki Konishi ,  Eiichi Okuno

发明人： Hirokazu Fujiwara ,  Masaki Konishi ,  Eiichi Okuno

IPC分类号： H01L29/72

CPC分类号： H01L29/7813 ,  H01L29/04 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/872

摘要： A semiconductor device is provided in which the contact resistance of the interface between an electrode and the semiconductor substrate is reduced. The semiconductor device includes a 4H polytype SiC substrate, and an electrode formed on a surface of the substrate. A 3C polytype layer, which extends obliquely relative to the surface of the substrate and whose end portion at the substrate surface is in contact with the electrode, is formed at the surface of the substrate. The 3C polytype layer has a lower bandgap than 4H polytype. Hence, electrons present in the 4H polytype region pass through the 3C polytype layer and reach the electrode. More precisely, the width of the passageway of the electrons is determined by the thickness of the 3C polytype layer. Consequently, with this semiconductor device, in which the passageway of the electrons is narrow, the electrons are able to reach the electrode at a speed close to the theoretical value, by the quantum wire effect. In this way, the contact resistance can be reduced in the semiconductor device.

摘要翻译： 提供一种半导体器件，其中电极和半导体衬底之间的界面的接触电阻降低。 半导体器件包括4H多型SiC衬底和形成在衬底的表面上的电极。 形成在基板表面上相对于基板的表面倾斜地延伸并且其基板表面的端部与电极接触的3C多型层。 3C多型层具有比4H多型更低的带隙。 因此，存在于4H多型区域中的电子通过3C多型层并到达电极。 更准确地说，电子通道的宽度由3C多型层的厚度决定。 因此，通过电子通道窄的这种半导体器件，电子能够以接近理论值的速度通过量子线效应到达电极。 以这种方式，可以在半导体器件中降低接触电阻。

公开(公告)号：US20090160008A1

公开(公告)日：2009-06-25

申请号：US12343714

申请日：2008-12-24

申请人： Hirokazu Fujiwara ,  Masaki Konishi ,  Eiichi Okuno

发明人： Hirokazu Fujiwara ,  Masaki Konishi ,  Eiichi Okuno

IPC分类号： H01L29/47 ,  H01L21/441

CPC分类号： H01L29/872 ,  H01L29/861

摘要： A semiconductor device that includes an n-type semiconductor substrate and an upper electrode formed on an upper face of the semiconductor substrate and a method of manufacturing the semiconductor device are provided. A p-type semiconductor region is repeatedly formed in the semiconductor substrate in at least one direction parallel to the substrate plane so as to be exposed on an upper face of the semiconductor substrate. The upper electrode includes a metal electrode portion; and a semiconductor electrode portion made of a semiconductor material whose band gap is narrower than that of the semiconductor substrate. The semiconductor electrode portion is provided on each p-type semiconductor region exposed on the upper face of the semiconductor substrate. The metal electrode portion is in Schottky contact with an n-type semiconductor region exposed on the upper face of the semiconductor substrate, and is in ohmic contact with the semiconductor electrode portion.

摘要翻译： 提供一种半导体器件，其包括形成在半导体衬底的上表面上的n型半导体衬底和上电极以及制造半导体器件的方法。 在半导体衬底中以平行于衬底平面的至少一个方向重复地形成p型半导体区域，以便露出在半导体衬底的上表面上。 上部电极包括金属电极部分; 以及由半导体材料制成的半导体电极部分，该半导体材料的带隙比半导体衬底窄。 半导体电极部分设置在暴露在半导体衬底的上表面上的每个p型半导体区域上。 金属电极部分与暴露在半导体衬底的上表面上的n型半导体区域肖特基接触，并与半导体电极部分欧姆接触。

公开(公告)号：US09853141B2

公开(公告)日：2017-12-26

申请号：US15107132

申请日：2014-08-04

申请人： Jun Saito ,  Hirokazu Fujiwara ,  Tomoharu Ikeda ,  Yukihiko Watanabe ,  Toshimasa Yamamoto

发明人： Jun Saito ,  Hirokazu Fujiwara ,  Tomoharu Ikeda ,  Yukihiko Watanabe ,  Toshimasa Yamamoto

IPC分类号： H01L29/15 ,  H01L29/78 ,  H01L29/06 ,  H01L21/762 ,  H01L29/10 ,  H01L29/167 ,  H01L29/739 ,  H01L29/16

CPC分类号： H01L29/7813 ,  H01L21/76237 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/0649 ,  H01L29/105 ,  H01L29/16 ,  H01L29/1608 ,  H01L29/167 ,  H01L29/7395 ,  H01L29/7811

摘要： Higher voltage resistance is accomplished by expanding a depletion layer more quickly within a circumferential region. A semiconductor device includes an element region, in which an insulated gate type switching element is provided, and the circumferential region. A first trench and a second trench spaced apart from the first trench are provided in the front surface in the circumferential region. Insulating films are provided in the first trench and the second trench. A fourth region of the second conductivity type is provided so as to extend from a bottom surface of the first trench to a bottom surface of the second trench. A fifth region of the first conductivity type continuous from the third region is provided under the fourth region.

公开(公告)号：US20120040172A1

公开(公告)日：2012-02-16

申请号：US10592085

申请日：2006-02-07

申请人： Hirokazu Fujiwara ,  Norimasa Yamada ,  Yoshihisa Abe

发明人： Hirokazu Fujiwara ,  Norimasa Yamada ,  Yoshihisa Abe

IPC分类号： B32B9/00 ,  B32B5/18 ,  B05D5/00 ,  B32B33/00 ,  B05D3/02 ,  B05D7/00 ,  B32B7/02 ,  B32B5/14

CPC分类号： C30B29/36 ,  C04B41/009 ,  C04B41/5057 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2111/0025 ,  C04B2111/00405 ,  C23C16/029 ,  C23C16/045 ,  C23C16/06 ,  C23C16/32 ,  C23C16/56 ,  C30B25/02 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/249961 ,  Y10T428/249981 ,  Y10T428/249987 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/30 ,  C04B41/0072 ,  C04B41/4531 ,  C04B41/4556 ,  C04B41/4582 ,  C04B35/522 ,  C04B35/52

摘要： The problem of the present invention is provision of a tantalum carbide-coated carbon material having superior corrosion resistance to reducing gas and superior resistance to thermal shock at a high temperature and a production method thereof.According to the present invention, a tantalum carbide-coated carbon material having a carbon substrate and a coating film formed directly or via an intermediate layer on the aforementioned carbon substrate can be provided. The coating film consists of a number of microcrystals of tantalum carbide, which are densely gathered and, in an X-ray diffraction pattern of the coating film, the diffraction intensity of the (220) plane of tantalum carbide preferably shows the maximum level, more preferably, the aforementioned diffraction intensity is not less than 4 times the intensity of the second highest diffraction intensity.

摘要翻译： 本发明的问题在于提供具有优异的耐还原气体耐腐蚀性和耐高温热冲击性的碳化钽碳化碳材料及其制造方法。 根据本发明，可以提供具有碳基板和直接形成在上述碳基板上的中间层形成的涂膜的碳化钽碳化碳材料。 涂膜由许多碳化钽微晶组成，它们密集地聚集，并且在涂膜的X射线衍射图中，碳化钽的（220）面的衍射强度优选显示最大水平，更多 优选上述衍射强度不小于第二高衍射强度强度的4倍。

公开(公告)号：US09612215B2

公开(公告)日：2017-04-04

申请号：US11632999

申请日：2005-07-01

申请人： Ichiro Fujita ,  Hirokazu Fujiwara

发明人： Ichiro Fujita ,  Hirokazu Fujiwara

IPC分类号： G01N23/225 ,  C23C16/458 ,  C30B25/12 ,  C30B29/36 ,  H01L21/687

CPC分类号： G01N23/2258 ,  C23C16/4581 ,  C30B25/12 ,  C30B29/36 ,  H01L21/68757

摘要： The invention provides a susceptor capable of obtaining high-quality SiC semiconductor crystals by keeping the Si concentration and C concentration around a wafer constant and by preventing the generation of particles. A susceptor of graphite covered with silicon carbide is characterized in that at least one section of a part on which a wafer is placed is tantalum carbide or a graphite material covered with tantalum carbide. The part on which the wafer is placed may be a detachable member. A material around the part on which the wafer is placed may be a detachable graphite material covered with silicon carbide.

公开(公告)号：US07779392B2

公开(公告)日：2010-08-17

申请号：US10998726

申请日：2004-11-30

申请人： Atsushi Sashino ,  Tomohiko Shigeoka ,  Hirokazu Fujiwara ,  Atsuhiro Yokoro ,  Akio Igarashi

发明人： Atsushi Sashino ,  Tomohiko Shigeoka ,  Hirokazu Fujiwara ,  Atsuhiro Yokoro ,  Akio Igarashi

IPC分类号： G06F9/44 ,  G06F9/46

CPC分类号： G06F9/505 ,  G06F9/5083 ,  G06F2209/5022

摘要： Object information is read that denotes a load state of the object from storage and selects an object having a load that is lower than a predetermined value. Then, a reference to an object allocation control part is returned that allocates the selected object to a destination as a response through communicating means. In allocating an object, the object information is read from the storage to select an object having a load that is lower than a predetermined value. Then, a reference to a dispatcher is returned that executes the selected object to the destination as a response through the communicating means. In executing the object, the object information is read from the storage and executes the object if the object has a load that is lower than a predetermined threshold value.

摘要翻译： 读取对象信息，其表示来自存储的对象的负载状态，并选择具有低于预定值的负载的对象。 然后，返回对对象分配控制部的引用，其通过通信手段将所选择的对象分配给目的地作为响应。 在分配对象时，从存储器读取对象信息以选择具有低于预定值的负载的对象。 然后，返回对调度器的引用，其通过通信装置作为响应将所选择的对象执行到目的地。 在执行对象时，如果对象具有低于预定阈值的负载，则从存储器读取对象信息并执行对象。

公开(公告)号：US08216667B2

公开(公告)日：2012-07-10

申请号：US10592085

申请日：2006-02-07

申请人： Hirokazu Fujiwara ,  Norimasa Yamada ,  Yoshihisa Abe

发明人： Hirokazu Fujiwara ,  Norimasa Yamada ,  Yoshihisa Abe

IPC分类号： B32B3/06 ,  B05D3/02

CPC分类号： C30B29/36 ,  C04B41/009 ,  C04B41/5057 ,  C04B41/52 ,  C04B41/87 ,  C04B41/89 ,  C04B2111/0025 ,  C04B2111/00405 ,  C23C16/029 ,  C23C16/045 ,  C23C16/06 ,  C23C16/32 ,  C23C16/56 ,  C30B25/02 ,  Y10T428/249955 ,  Y10T428/249956 ,  Y10T428/249961 ,  Y10T428/249981 ,  Y10T428/249987 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/30 ,  C04B41/0072 ,  C04B41/4531 ,  C04B41/4556 ,  C04B41/4582 ,  C04B35/522 ,  C04B35/52

摘要： This invention provides a tantalum carbide-coated carbon material, which has excellent corrosion resistance to reducing gases and thermal shock resistance at high temperatures, and a process for producing the same. The tantalum carbide-coated carbon material comprises a carbon substrate and a coating film provided on the carbon substrate directly or through an intermediate layer. The coating film is formed of a large number of densely aggregated fine crystals of tantalum carbide. The diffraction line of the (220) plane of tantalum carbide shows the maximum diffraction intensity in an X-ray diffraction pattern of the coating film. More preferably, this diffraction intensity is not less than four times the intensity of a diffraction line showing the second highest diffraction intensity.

摘要翻译： 本发明提供一种碳化钽涂覆的碳材料及其制造方法，其具有优异的耐气体性和耐高温耐热冲击性。 碳化钽包覆的碳材料包括直接或通过中间层设置在碳衬底上的碳衬底和涂膜。 涂膜由大量碳化钽密集聚集的微细晶体形成。 碳化钽（220）面的衍射线显示了涂膜的X射线衍射图中的最大衍射强度。 更优选地，该衍射强度不小于显示第二高衍射强度的衍射线的强度的四倍。

公开(公告)号：US20070186858A1

公开(公告)日：2007-08-16

申请号：US10594562

申请日：2005-03-28

申请人： Tunenobu Kimoto ,  Hiroyuki Matsunami ,  Hirokazu Fujiwara

发明人： Tunenobu Kimoto ,  Hiroyuki Matsunami ,  Hirokazu Fujiwara

IPC分类号： C23C16/00

CPC分类号： H01L21/68785 ,  C23C16/4588 ,  C30B25/12 ,  C30B31/14 ,  H01L21/67103 ,  H01L21/68757 ,  H01L21/68771

摘要： A susceptor used in semiconductor epitaxial growth that can simultaneously obtain a plurality of epitaxial films high in uniformity. The susceptor includes a barrel type susceptor having a plurality of surfaces on an outer side of each of which a plurality of substrates can be freely disposed, and a member that has the barrel type susceptor disposed inside thereof and surfaces each of which is oppositely disposed tilting in the same direction as each of the surfaces of the barrel type susceptor. Alternatively, a susceptor includes a barrel type susceptor having a plurality of surfaces on an inner side of each of which a plurality of substrates can be freely disposed, and a member that has the barrel type susceptor disposed at the peripheral portion thereof and surfaces each of which is oppositely disposed tilting in the same direction as each of the surfaces of the barrel type susceptor.

摘要翻译： 用于半导体外延生长的感受体可以同时获得高均匀性的多个外延膜。 所述基座包括：筒状基座，其外侧上具有多个可自由布置的基板的多个表面;以及具有设置在其内部的所述筒状基座的构件，其表面各倾斜相对设置 在与桶形基座的每个表面相同的方向上。 或者，基座包括：筒型基座，其内侧具有多个表面，每个表面可以自由地设置多个基板;以及构件，其具有设置在其周边部分的圆筒型基座， 其相对地设置在与筒型基座的每个表面相同的方向上倾斜。

公开(公告)号：US20080035632A1

公开(公告)日：2008-02-14

申请号：US11632999

申请日：2005-07-01

申请人： Ichiro Fujita ,  Hirokazu Fujiwara

发明人： Ichiro Fujita ,  Hirokazu Fujiwara

IPC分类号： H05B6/10

CPC分类号： G01N23/2258 ,  C23C16/4581 ,  C30B25/12 ,  C30B29/36 ,  H01L21/68757

摘要： The invention provides a susceptor capable of obtaining high-quality SiC semiconductor crystals by keeping the Si concentration and C concentration around a wafer constant and by preventing the generation of particles. A susceptor of graphite covered with silicon carbide is characterized in that at least one section of a part on which a wafer is placed is tantalum carbide or a graphite material covered with tantalum carbide. The part on which the wafer is placed may be a detachable member. A material around the part on which the wafer is placed may be a detachable graphite material covered with silicon carbide.

摘要翻译： 本发明提供一种能够通过保持晶片周围的Si浓度和C浓度恒定并通过防止产生颗粒而获得高质量SiC半导体晶体的感受体。 覆盖有碳化硅的石墨感受体的特征在于，放置晶片的部分的至少一个部分是碳化钽或碳化钽覆盖的石墨材料。 放置晶片的部分可以是可拆卸的部件。 放置晶片的部分周围的材料可以是用碳化硅覆盖的可分离的石墨材料。