公开(公告)号：US20080237752A1

公开(公告)日：2008-10-02

申请号：US12128796

申请日：2008-05-29

申请人： Hiroshi Kujirai ,  Kousuke Okuyama ,  Kazuhiro Hata ,  Kiyonori Oyu ,  Ryo Nagai ,  Hiroyuki Uchiyama ,  Takahiro Kumauchi ,  Teruhisa Ichise

发明人： Hiroshi Kujirai ,  Kousuke Okuyama ,  Kazuhiro Hata ,  Kiyonori Oyu ,  Ryo Nagai ,  Hiroyuki Uchiyama ,  Takahiro Kumauchi ,  Teruhisa Ichise

IPC分类号： H01L49/00

CPC分类号： H01L29/4983 ,  H01L21/28061 ,  H01L21/28247 ,  H01L21/76897 ,  H01L27/10811 ,  H01L27/10814 ,  H01L27/10873 ,  H01L29/4941

摘要： Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET. Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented.

摘要翻译： 公开了通过减少组成MISFET的多金属栅极的金属的污染来减少泄漏电流的技术。 在p型阱（半导体衬底），帽绝缘膜，W膜和WN膜上的栅绝缘膜上形成的多晶硅膜，WN膜，W膜和帽绝缘膜是 进行蚀刻，并对其下面的多晶硅膜进行过蚀刻。 然后，在这些膜的侧壁上形成侧壁膜。 此后，在以侧壁膜为掩模蚀刻多晶硅膜之后，在氧化气氛中进行热处理，在多晶硅膜的侧壁上形成有氧化膜。 结果，可以减少由W和W氧化物引起的栅绝缘膜上的污染，并且这些材料向半导体衬底（p型阱）的扩散以及由此导致的漏电流的增加 被阻止

公开(公告)号：US20050208716A1

公开(公告)日：2005-09-22

申请号：US11130236

申请日：2005-05-17

申请人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Shinichiro Kimura ,  Ryo Nagai ,  Satoru Yamada

发明人： Norikatsu Takaura ,  Hideyuki Matsuoka ,  Shinichiro Kimura ,  Ryo Nagai ,  Satoru Yamada

IPC分类号： H01L27/108 ,  H01L21/336 ,  H01L21/60 ,  H01L21/768 ,  H01L21/8238 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/115 ,  H01L29/49

CPC分类号： H01L27/10894 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823857 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10873 ,  H01L27/10888 ,  H01L27/10897 ,  H01L27/11502 ,  H01L27/11507 ,  H01L29/4941 ,  H01L29/6656

摘要： A refresh characteristic of a DRAM memory cell is improved and the performance of a MISFET formed in the periphery thereof and constituting a logic circuit is improved. Each gate electrode in a memory cell area is formed of p type polycrystalline silicon, and a cap insulating film on each gate electrode and a sidewall film on the sidewall thereof are formed of a silicon oxide film. A polycrystalline silicon film formed on the gate electrodes and between the gate electrodes is polished by a CMP method, and thereby contact electrodes are formed. Also, sidewall films each composed of a laminated film of the silicon oxide film and the polycrystalline silicon film are formed on the sidewall of the gate electrodes in the logic circuit area, and these films are used as a mask to form semiconductor areas. As a result, it is possible to reduce the boron penetration and form contact electrodes in a self-alignment manner. In addition, the performance of the MISFET constituting the logic circuit can be improved.

摘要翻译： DRAM存储单元的刷新特性得到改善，并且在周边形成的构成逻辑电路的MISFET的性能得到改善。 存储单元区域中的每个栅电极由p型多晶硅形成，并且每个栅电极上的帽绝缘膜和其侧壁上的侧壁膜由氧化硅膜形成。 通过CMP方法对形成在栅电极和栅电极之间的多晶硅膜进行抛光，形成接触电极。 此外，在逻辑电路区域中的栅电极的侧壁上形成各自由氧化硅膜和多晶硅膜的叠层膜构成的侧壁膜，并且将这些膜用作掩模以形成半导体区域。 结果，可以以自对准的方式降低硼渗透并形成接触电极。 此外，可以提高构成逻辑电路的MISFET的性能。

公开(公告)号：US20050087880A1

公开(公告)日：2005-04-28

申请号：US10978469

申请日：2004-11-02

申请人： Hiroshi Kujirai ,  Kousuke Okuyama ,  Kazuhiro Hata ,  Kiyonori Oyu ,  Ryo Nagai ,  Hiroyuki Uchiyama ,  Takahiro Kumauchi ,  Teruhisa Ichise

发明人： Hiroshi Kujirai ,  Kousuke Okuyama ,  Kazuhiro Hata ,  Kiyonori Oyu ,  Ryo Nagai ,  Hiroyuki Uchiyama ,  Takahiro Kumauchi ,  Teruhisa Ichise

IPC分类号： H01L21/768 ,  H01L21/28 ,  H01L21/60 ,  H01L21/8242 ,  H01L27/092 ,  H01L27/108 ,  H01L29/49 ,  H01L29/78 ,  H01L23/48

CPC分类号： H01L29/4983 ,  H01L21/28061 ,  H01L21/28247 ,  H01L21/76897 ,  H01L27/10811 ,  H01L27/10814 ,  H01L27/10873 ,  H01L29/4941

摘要： Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET: Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented.

摘要翻译： 公开了一种通过减少组成MISFET的多金属栅极的金属的污染来减少泄漏电流的技术：在p上的栅极绝缘膜上形成的多晶硅膜，WN膜，W膜和帽绝缘膜 （半导体衬底），帽绝缘膜，W膜和WN膜被蚀刻，并且进行其下面的多晶硅膜的过蚀刻。 然后，在这些膜的侧壁上形成侧壁膜。 此后，在以侧壁膜为掩模蚀刻多晶硅膜之后，在氧化气氛中进行热处理，在多晶硅膜的侧壁上形成有氧化膜。 结果，可以减少由W和W氧化物引起的栅绝缘膜上的污染，并且这些材料向半导体衬底（p型阱）的扩散以及由此导致的漏电流的增加 被阻止

公开(公告)号：US06593031B1

公开(公告)日：2003-07-15

申请号：US09635804

申请日：2000-08-11

申请人： Masuhiro Onishi ,  Hiroshi Fukunaga ,  Masato Isogai ,  Ryo Nagai

发明人： Masuhiro Onishi ,  Hiroshi Fukunaga ,  Masato Isogai ,  Ryo Nagai

IPC分类号： H01M458

CPC分类号： H01M4/385 ,  H01M2/1646 ,  H01M4/364 ,  H01M4/52 ,  H01M10/345 ,  Y10S420/90

摘要： A nickel metal-hydride cell having a paste type nickel positive electrode containing nickel hydroxide and a cobalt conducting aid selected from the group consisting of metal cobalt and cobalt compounds, a negative electrode which comprises a hydrogen absorbing alloy having a composition of the formula: MmNi5−x+yMx in which Mm is a rare earth element, M is a metal element, 0

摘要翻译： 一种镍金属氢化物电池，其具有含有氢氧化镍的糊状镍正电极和选自金属钴和钴化合物的钴导电助剂，负极包含具有下式的组成的吸氢合金：MmNi5 -x + yMx，其中Mm是稀土元素，M是金属元素，0

公开(公告)号：US6051333A

公开(公告)日：2000-04-18

申请号：US746341

申请日：1996-11-08

申请人： Ryo Nagai ,  Hiroshi Fukunaga ,  Shoichiro Tateishi

发明人： Ryo Nagai ,  Hiroshi Fukunaga ,  Shoichiro Tateishi

IPC分类号： H01M4/70 ,  H01M4/13 ,  H01M4/24 ,  H01M4/64 ,  H01M4/74 ,  H01M6/10 ,  H01M10/04 ,  H01M10/05 ,  H01M10/0587 ,  H01M10/28 ,  H01M10/24

CPC分类号： H01M4/742 ,  H01M10/286 ,  H01M6/10 ,  H01M4/64

摘要： A cell comprising an electrode body having positive and negative electrodes which are spirally wound with interposing a separator therebetween and a cell case in which the electrode body is inserted, wherein a pair of the negative electrodes face respective surfaces of the positive electrode through the separator, and the negative electrodes are in contact with each other substantially in the second and subsequent turns, or wherein the negative electrode comprises a metal substrate and a pair of layers of electrode active material formed on both surfaces of the substrate, provided that the negative electrode which is present in at least one of the innermost and outermost turns of electrode body carries the layer of the electrode active material only on one side of the substrate, and each layer of the electrode active material of the negative electrode faces the positive electrode through the separator.

摘要翻译： 一种电池，包括具有正极和负极的电极体，所述电极体螺旋地缠绕并插入隔板;电池壳体，其中插入有电极体，其中一对负极通过隔膜面对正极的各个表面， 并且负极基本上在第二次和随后的匝中彼此接触，或者其中负电极包括形成在基板的两个表面上的金属基板和一对电极活性材料层，条件是负电极 存在于电极体的最内侧和最外侧的匝中的至少一方，仅在基板的一侧承载电极活性物质层，负极的电极活性物质的各层通过分离器与正极对置 。

公开(公告)号：US5202202A

公开(公告)日：1993-04-13

申请号：US541743

申请日：1990-06-21

申请人： Ryo Nagai ,  Hiroshi Hattori ,  Hiroyuki Higuchi ,  Masao Abe

发明人： Ryo Nagai ,  Hiroshi Hattori ,  Hiroyuki Higuchi ,  Masao Abe

IPC分类号： C08L79/00 ,  C08G73/00 ,  C08G73/02 ,  H01M4/60 ,  H01M10/05 ,  H01M10/052

CPC分类号： H01M10/05 ,  C08G73/0266 ,  H01M4/60

摘要： A cell comprising a negative electrode made of metal lithium or a lithium alloy, a positive electrode which comprises polyaniline and has a main peak around 3.0 V versus a lithium electrode and a sub-peak around 3.6 V versus a lithium electrode with a height ratio of the sub-peak to the main peak being not smaller than 0.25 in a discharge capacity distribution curve in the discharge voltage range between 3.8 V and 2.5 V versus a lithium electrode, and a non-aqueous organic electrolytic solution containing a lithium salt dissolved therein, which has long discharge life, high energy density, good charge-discharge cycle characteristics and improve load characteristics.

摘要翻译： 包含由金属锂或锂合金制成的负极的电池，包含聚苯胺的正极，并且具有约3.0V的主峰相对于锂电极的主峰，以及3.6V附近的亚峰与锂电极的高度比为 在相对于锂电极的3.8V至2.5V之间的放电电压范围的放电容量分布曲线中，主峰的次峰不大于0.25，以及溶解有锂盐的非水有机电解液， 其放电寿命长，能量密度高，充放电循环特性好，负载特性好。

公开(公告)号：US4996089A

公开(公告)日：1991-02-26

申请号：US380295

申请日：1989-07-17

申请人： Osamu Saito ,  Hisamitsu Kamezaki ,  Masashi Suenaga ,  Ryo Nagai ,  Shinichiro Iuchi ,  Hitoshi Watanabe ,  Hideo Fujiwara

发明人： Osamu Saito ,  Hisamitsu Kamezaki ,  Masashi Suenaga ,  Ryo Nagai ,  Shinichiro Iuchi ,  Hitoshi Watanabe ,  Hideo Fujiwara

IPC分类号： B41M5/26 ,  G11B7/24 ,  G11B7/244 ,  G11B7/247 ,  G11B7/254

CPC分类号： G11B7/2575 ,  G11B7/2472 ,  G11B7/2534 ,  G11B7/254 ,  Y10S428/913 ,  Y10S430/145 ,  Y10S430/146 ,  Y10S430/165

摘要： An optical data recording medium provided with a recording layer, the recording medium having excellent durability to light and heat, superior writing sensitivity and a high C/N value, wherein at least one a group of anion selected from a group of hexafluorophosphate ion (PF.sub.6 .sup.-), trifluoromethane sulfonate ion (CF.sub.3 SO.sub.3 .sup.-) or thiocyanate ion (SCN.sup.-) is present as the anion in an indol cyanine dye having a methyne chain present in the recording layer of the optical data recording medium.

公开(公告)号：US4636630A

公开(公告)日：1987-01-13

申请号：US681225

申请日：1984-12-13

申请人： Ryo Nagai

发明人： Ryo Nagai

IPC分类号： G01D5/36 ,  H01J40/14

CPC分类号： G01D5/36

摘要： A photoelectric type displacement detecting apparatus, such as a digital display dial gauge micrometer, with an improved frequency response, comprising optical lattice means, light emitting means for irradiating the optical lattice means with a detecting light, light receiving means for receiving a transmission or reflective light from the optical lattice means, and a detection circuit for generating an output signal indicative of relative movement in the lattice. The frequency characteristic of a phototransistor adapted in the light receiving means depends on the input impedance of a base-grounded transistor to maintain the current supplied to the light emitting means constant and to improve the frequency response in the detection apparatus.

摘要翻译： 具有改进的频率响应的诸如数字显示千分表的光电式位移检测装置，包括光栅装置，用于用检测光照射光栅装置的发光装置，用于接收透射或反射的光接收装置 来自光学晶格装置的光，以及用于产生表示格子中的相对运动的输出信号的检测电路。 适合于光接收装置的光电晶体管的频率特性取决于基极接地晶体管的输入阻抗，以保持提供给发光装置的电流恒定并提高检测装置中的频率响应。

公开(公告)号：US07998637B2

公开(公告)日：2011-08-16

申请号：US10490528

申请日：2003-02-14

申请人： Hiroshi Kashino ,  Yasuo Arishima ,  Shinsuke Shibata ,  Gun Seki ,  Shoji Saibara ,  Ryo Nagai

发明人： Hiroshi Kashino ,  Yasuo Arishima ,  Shinsuke Shibata ,  Gun Seki ,  Shoji Saibara ,  Ryo Nagai

IPC分类号： H01M8/10 ,  H01M8/04

CPC分类号： H01M8/1009 ,  H01M8/04186 ,  H01M8/1004 ,  H01M8/2455

摘要： A liquid fuel cell comprising a plurality of unit fuel cells each having a positive electrode (8) for reducing oxygen, a negative electrode (9) for oxidizing liquid fuel, and an electrolyte layer (10) interposed between the positive electrode (8) and the negative electrode (9), and a section (3) for storing liquid fuel (4), wherein power can be generated stably while reducing the size by arranging the plurality of unit fuel cells on the substantially same plane. Each electrolyte layer of the unit fuel cell preferably constitutes a continuous integrated electrolyte layer.

摘要翻译： 一种液体燃料电池，包括多个单元燃料电池，每个单元燃料电池均具有用于还原氧的正电极（8），用于氧化液体燃料的负电极（9）和介于所述正电极（8）和 负极（9）和用于储存液体燃料（4）的部分（3），其中通过将多个单位燃料电池布置在基本相同的平面上，能够稳定地产生功率，同时减小尺寸。 单元燃料电池的每个电解质层优选构成连续的集成电解质层。

公开(公告)号：US07875518B2

公开(公告)日：2011-01-25

申请号：US12453737

申请日：2009-05-20

申请人： Satoru Yamada ,  Ryo Nagai

发明人： Satoru Yamada ,  Ryo Nagai

IPC分类号： H01L21/336 ,  H01L21/425

CPC分类号： H01L21/28061 ,  H01L21/823842 ,  H01L29/4941

摘要： A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique.

摘要翻译： 一种形成半导体器件的方法依次包括在半导体衬底上沉积栅极绝缘膜和硅层，将硼注入到硅层中，通过热处理硅层来扩散硼，将磷注入到硅中 层，通过热处理硅层至少扩散至少磷，并通过使用干蚀刻技术图案化硅层。