公开(公告)号：US10791589B2

公开(公告)日：2020-09-29

申请号：US15879110

申请日：2018-01-24

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Werner Simbuerger ,  Dietmar Straeussnigg ,  Andreas Wiesbauer

IPC: H05B3/02 ,  G01L9/12 ,  G01L19/00 ,  H05B1/02 ,  G01K1/20 ,  G01L19/04 ,  G01N33/00 ,  H04R1/08 ,  H04R9/02

Abstract: A sensor circuit and a method for compensating for temperature changes are provided. In accordance with an embodiment, sensor circuit includes at least one sensor for determining a measurement variable; a heating structure; and at least one compensation circuit. The compensation circuit is configured to acquire information about a temperature change in an environment of the sensor, and to counteract a temperature change in the sensor on the basis of the information by driving the heating structure.

公开(公告)号：US20200166492A1

公开(公告)日：2020-05-28

申请号：US16692489

申请日：2019-11-22

Applicant: Infineon Technologies AG

Inventor： Prashanth Makaram ,  Ulrich Krumbein

IPC: G01N33/00 ,  G06F1/3203

Abstract: A method includes exposing gas sensitive material of a gas sensor device to different adjusted target gas concentrations, determining measurement values of the resistance of the gas sensitive material between first and second contact regions in response to the adjusted target gas concentration, determining a first gas sensor behavior model based on the measurement values of the resistance of the gas sensitive material as a function of the adjusted target gas concentration, translating the first gas sensor behavior model into a corresponding second gas sensor behavior model for the resistance of the gas sensitive material as a function of a control voltage, and sweeping the control voltage based on the second gas sensor behavior model over a control voltage range for providing control voltage dependent resistance data, wherein the control voltage dependent resistance data over the control voltage range form the calibration data for the gas sensor device.

公开(公告)号：US10231061B2

公开(公告)日：2019-03-12

申请号：US15581744

申请日：2017-04-28

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Ulrich Krumbein

IPC: H04R19/00 ,  H04R19/04 ,  H04R7/04 ,  B81B3/00

Abstract: A sound transducer includes a housing with a sound port and a MEMS structure disposed in an interior space of the housing. The MEMS structure and the sound port are acoustically coupled to each other. The MEMS structure separates a front volume from a back volume of the housing. At least one vent hole of the MEMS structure allows a gas exchange between the front volume and the back volume. The sound port allows a liquid to enter the front volume. Further, the MEMS structure prevents liquid from entering the back volume.

公开(公告)号：US09967679B2

公开(公告)日：2018-05-08

申请号：US14613106

申请日：2015-02-03

Applicant: Infineon Technologies AG

Inventor： Ulrich Krumbein ,  Alfons Dehe

IPC: H04R23/00 ,  B81B7/02 ,  H04R17/02 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00 ,  H04R19/01 ,  H04R19/02

CPC classification number: H04R23/00 ,  B81B7/02 ,  B81B2201/0257 ,  B81B2201/0278 ,  B81B2207/015 ,  H04R17/02 ,  H04R19/005 ,  H04R19/013 ,  H04R19/016 ,  H04R19/02 ,  H04R19/04 ,  H04R31/00 ,  H04R2201/003

Abstract: According to embodiment, a transducer includes a microfabricated element integrated on a single die and an interface IC coupled to the microfabricated element. The microfabricated element includes an acoustic transducer and a temperature sensor, and the interface IC is electrically coupled to the acoustic transducer and the temperature sensor.

公开(公告)号：US09902612B2

公开(公告)日：2018-02-27

申请号：US15629834

申请日：2017-06-22

Applicant: Infineon Technologies AG

Inventor： Alfons Dehe ,  Stefan Barzen ,  Ulrich Krumbein ,  Wolfgang Friza ,  Wolfgang Klein

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0109 ,  B81C1/00325

Abstract: A method for forming a microelectromechanical device may provide forming a first layer at least one of in or over a semiconductor carrier; forming a second layer at least one of in or over at least a central region of the first layer, such that a peripheral region of the first layer is at least partially free of the second layer; removing material under at least a central region of the second layer to release at least one of the central region of the second layer or a central region of the first layer; and/or removing material under at least the peripheral region of the first layer to such that the second layer is supported by the semiconductor carrier via the first layer.

公开(公告)号：US11835041B2

公开(公告)日：2023-12-05

申请号：US16922530

申请日：2020-07-07

Applicant: Infineon Technologies AG

Inventor： Martin Seidl ,  Alfons Dehe ,  Daniel Fruechtl ,  Wolfgang Klein ,  Ulrich Krumbein ,  Johann Strasser ,  Matthias Vobl

IPC: F04B53/10 ,  F04B43/04 ,  F16K99/00

CPC classification number: F04B53/1047 ,  F04B43/046 ,  F16K99/0015 ,  F16K2099/0094

Abstract: A MEMS pump includes a basis structure, a membrane structure opposing the basis structure and being deflectable parallel to a surface normal of the basis structure and includes a pump chamber between the basis structure and the membrane structure wherein a volume of the pump chamber is based on a position of the membrane structure with respect to the basis structure. The MEMS pump includes a passage for letting a fluid pass into the pump chamber or exit the pump chamber, wherein the passage is arranged in-plane with respect to the pump chamber. The MEMS pump includes a valve structure coupled to the passage for connecting, in a first state, the passage to a first outer volume and for connecting, in a second state, the passage to a second outer volume.

公开(公告)号：US11237090B2

公开(公告)日：2022-02-01

申请号：US16807698

申请日：2020-03-03

Applicant: Infineon Technologies AG

Inventor： Michael Schneider ,  Alfons Dehe ,  Manuel Dorfmeister ,  Christoph Glacer ,  Ulrich Krumbein ,  Ulrich Schmid ,  David Tumpold

IPC: G01N15/06

Abstract: A sensor element includes a membrane structure suspended on a frame structure, wherein the membrane structure includes a membrane element and an actuator. The membrane structure is deflectable in a first stable deflection state and in a second stable deflection state and is operable in a resonance mode in at least one of the first and the second stable deflection states. The actuator is configured to deflect the membrane structure in a first actuation state into one of the first and the second stable deflection states, and to operate the membrane structure in a second actuation state in a resonance mode having an associated resonance frequency.

公开(公告)号：US20220009771A1

公开(公告)日：2022-01-13

申请号：US17357234

申请日：2021-06-24

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein

IPC: B81C1/00 ,  B81B3/00

Abstract: A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.

公开(公告)号：US20210323813A1

公开(公告)日：2021-10-21

申请号：US17357146

申请日：2021-06-24

Applicant: Infineon Technologies AG

Inventor： Gunar Lorenz ,  Alfons Dehe ,  Marc Fueldner ,  Bernd Goller ,  Ulrich Krumbein ,  Andreas Wiesbauer

IPC: B81B7/00 ,  B81B3/00 ,  B81B7/02 ,  H04R19/04 ,  H04R1/02 ,  G01L9/00

Abstract: A MEMS sensor includes a housing with an interior volume, wherein the housing has an access port to the interior volume, a MEMS component in the housing, and a protection structure, which reduces an introduction of electromagnetic disturbance radiation with a wavelength in the range between 10 nm and 20 μm into the interior volume through the access port and reduces a propagation of the electromagnetic disturbance radiation in the interior volume.

公开(公告)号：US20210246016A1

公开(公告)日：2021-08-12

申请号：US17150527

申请日：2021-01-15

Applicant: Infineon Technologies AG

Inventor： Stephan Pindl ,  Carsten Ahrens ,  Stefan Jost ,  Ulrich Krumbein ,  Matthias Reinwald

IPC: B81B7/00 ,  B81C1/00 ,  G01N29/24 ,  G01N33/00

Abstract: An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.