公开(公告)号：US20220103550A1

公开(公告)日：2022-03-31

申请号：US17037953

申请日：2020-09-30

Applicant: International Business Machines Corporation

Inventor： Heng Wang ,  Xiao Ling Chen ,  Chen Guang Liu ,  Wen Qi WQ Ye ,  Fei Tan ,  Lu Lu ,  Jing Li ,  Qing Yu Pei

IPC: H04L29/06

Abstract: Methods, computer program products, and/or systems are provided that can perform the following operations: receiving a connection request from a first user device; creating an authentication container for the first user device; authenticating the first user device using the authentication container; in response to authentication for the first user device being successful, creating a first user request processing container for the first user device; and processing user requests received from the first user device using the first user request processing container.

公开(公告)号：US10474956B2

公开(公告)日：2019-11-12

申请号：US14748850

申请日：2015-06-24

Applicant: International Business Machines Corporation

Inventor： Jing Li ,  Xiang Li ,  Haifeng Liu ,  Guo Tong Xie ,  Yi Qin Yu ,  Shi Lei Zhang

IPC: G06N7/00

Abstract: A method for detecting deviations between an event log and a process model includes converting the process model into a probability process model, the probability process model comprising multiple nodes in multiple hierarchies and probability distribution associated with the multiple nodes, a leaf node among the multiple nodes corresponding to an activity in the process model; detecting differences between at least one event sequence contained in the event log and the probability process model according to a correspondence relationship; and identifying the differences as the deviations in response to the differences exceeding a predefined threshold; wherein the correspondence relationship describes a correspondence relationship between an event in one event sequence of the at least one event sequence and a leaf node in the probability process model.

公开(公告)号：US10437565B2

公开(公告)日：2019-10-08

申请号：US15252960

申请日：2016-08-31

Applicant: International Business Machines Corporation

Inventor： Bi Bo Hao ,  Gang Hu ,  Jing Li ,  Wen Sun ,  Guo Tong Xie ,  Yi Qin Yu

IPC: G06F8/33

Abstract: This disclosure provides a computer-implemented method for code suggestion. The method comprises collecting a set of runtime context features of a program that is being edited. The method further comprises comparing the set of runtime context features with at least one set of stored context features to find at least one matching set of stored context features. Each of the at least one set of stored context features is extracted from a corresponding code segment. The method further comprises presenting at least one code segment with its set of stored context features matching the set of runtime context features, for the user to choose to add into the program.

公开(公告)号：US10372893B2

公开(公告)日：2019-08-06

申请号：US15340373

申请日：2016-11-01

Applicant: International Business Machines Corporation

Inventor： Jing Li ,  Jie Ma ,  Li Jun Mei ,  Jian Wang

IPC: G06F21/00 ,  G06F21/32 ,  G06F21/31

Abstract: Embodiments of the present disclosure relate to a new approach for sensor-based authentication to enhance mobile security. In the computer-implemented method, motion related sensor data is obtained. A label of a behavior is determined wherein the behavior has a time information of the behavior. The label is associated with at least part of the motion related sensor data based on the time information of the behavior and the time information of the motion. At least one comparable motion is determined from the associated part of motion related sensor data. At least one motion passcode based on the determined comparable motion is identified.

公开(公告)号：US20190065687A1

公开(公告)日：2019-02-28

申请号：US15690436

申请日：2017-08-30

Applicant: International Business Machines Corporation

Inventor： Jing Mei ,  Shi Wan Zhao ,  Gang Hu ,  Jing Li ,  Eryu Xia ,  En Liang Xu

IPC: G06F19/00 ,  G06N3/08 ,  G06F17/30

Abstract: Patient treatment may be optimized using Recurrent Neural Network (RNN) based state simulation and Reinforcement learning (RL) techniques to simulate future states and actions. A RNN state simulator and a RL action generator may be trained using patient data such as historical states and actions. The RL action generator may be optimized by applying the RNN state simulator to simulating future states and applying the RL action generator to generate recommended actions based on the simulated future states. This process may be iteratively performed until a computational convergence is reached by the RL action generator which may indicate that the RL action generator has been optimized. A patient state may be fed into the optimized RL action generator to generate an optimal recommended treatment action.

公开(公告)号：US20190059998A1

公开(公告)日：2019-02-28

申请号：US15820237

申请日：2017-11-21

Applicant: International Business Machines Corporation

Inventor： Jing Mei ,  Shi Wan Zhao ,  Gang Hu ,  Jing Li ,  Eryu Xia ,  En Liang Xu

IPC: G06N3/08 ,  G06F17/30 ,  G06F19/00

Abstract: Patient treatment may be optimized using Recurrent Neural Network (RNN) based state simulation and Reinforcement learning (RL) techniques to simulate future states and actions. A RNN state simulator and a RL action generator may be trained using patient data such as historical states and actions. The RL action generator may be optimized by applying the RNN state simulator to simulating future states and applying the RL action generator to generate recommended actions based on the simulated future states. This process may be iteratively performed until a computational convergence is reached by the RL action generator which may indicate that the RL action generator has been optimized. A patient state may be fed into the optimized RL action generator to generate an optimal recommended treatment action.

公开(公告)号：US20150347054A1

公开(公告)日：2015-12-03

申请号：US14826305

申请日：2015-08-14

Applicant: International Business Machines Corporation

Inventor： Bing Dai ,  Chung H. Lam ,  Jing Li

IPC: G06F3/06

CPC classification number: G06F3/0625 ,  G06F1/3225 ,  G06F1/3275 ,  G06F3/0631 ,  G06F3/0653 ,  G06F3/0679 ,  G06F9/5016 ,  G06F12/02 ,  Y02D10/13 ,  Y02D10/14 ,  Y02D10/22

Abstract: A memory system, system including the memory system and method of reducing memory system power consumption. The memory system includes multiple memory units allocable to one of a number of processor units, e.g., processors or processor cores. A memory controller receives requests for memory from the processor units and allocates sufficient space from the memory to each requesting processor unit. Allocated memory can include some Single Level per Cell (SLC) memory units storing a single bit per cell and other memory units storing more than one bit per cell. Thus, two processor units may be assigned identical memory space, while half, or fewer, than the number of cells of one are assigned to the other.

Abstract translation: 一种存储系统，包括内存系统和减少内存系统功耗的方法。 存储器系统包括可分配到多个处理器单元之一（例如处理器或处理器核）中的多个存储器单元。 存储器控制器从处理器单元接收对存储器的请求，并从存储器向每个请求处理器单元分配足够的空间。 分配的存储器可以包括存储每个单元的单个位的单个单元（SLC）存储器单元和存储每个单元多于一个位的其它存储器单元。 因此，两个处理器单元可以被分配相同的存储器空间，而一个或更少个分配给另一个的单元的数量。

公开(公告)号：US20150004800A1

公开(公告)日：2015-01-01

申请号：US13969625

申请日：2013-08-19

Applicant: International Business Machines Corporation

Inventor： Chung H. Lam ,  Jing Li

IPC: H01L21/308

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76883

Abstract: A method for fabricating a semiconductor device utilizing a plurality of masks and spacers. The method includes forming parallel first trenches in a substrate using a first lithographic process. The substrate includes sidewalls adjacent to the parallel first trenches. Forming first spacers adjacent to the sidewalls. Removing the sidewalls, which in part includes using a second lithographic process. Forming second spacers adjacent to the first spacers, resulting in spacer ridges. Etching portions of the substrate between the spacer ridges resulting in second trenches.

Abstract translation: 一种利用多个掩模和间隔物制造半导体器件的方法。 该方法包括使用第一光刻工艺在衬底中形成平行的第一沟槽。 衬底包括与平行的第一沟槽相邻的侧壁。 形成与侧壁相邻的第一间隔物。 去除侧壁，其部分地包括使用第二光刻工艺。 与第一间隔物相邻形成第二间隔物，产生间隔脊。 在间隔脊之间蚀刻基板的部分，产生第二沟槽。

公开(公告)号：US20150004785A1

公开(公告)日：2015-01-01

申请号：US13931798

申请日：2013-06-28

Applicant: International Business Machines Corporation

Inventor： Chung H. Lam ,  Jing Li

IPC: H01L21/768

CPC classification number: H01L21/76802 ,  H01L21/0337 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/76816 ,  H01L21/76883

Abstract: A method for fabricating a semiconductor device utilizing a plurality of masks and spacers. The method includes forming parallel first trenches in a substrate using a first lithographic process. The substrate includes sidewalls adjacent to the parallel first trenches. Forming first spacers adjacent to the sidewalls. Removing the sidewalls, which in part includes using a second lithographic process. Forming second spacers adjacent to the first spacers, resulting in spacer ridges. Etching portions of the substrate between the spacer ridges resulting in second trenches.

公开(公告)号：US20140281294A1

公开(公告)日：2014-09-18

申请号：US13842375

申请日：2013-03-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Bing Dai ,  Chung H. Lam ,  Jing Li

IPC: G06F3/06

CPC classification number: G06F3/0616 ,  G06F3/0653 ,  G06F3/0688 ,  G11C16/28 ,  G11C16/349

Abstract: A wear leveling technique is employed in a memory device so that the cycling history of a memory block is represented by the cycling history of a representative memory cell or a small number of representative memory cells. A control logic block tracks the cycling history of the one or more representative memory cells. A table tabulating the predicted shift in an optimal value for a reference variable for a sensing circuit as a function of cycling history is provided within the memory device. Prior to sensing a memory cell, the control logic block checks the total number of cycling in the one or more representative memory cells and adjusts the value for the reference variable in the sensing circuit, thereby providing an optimal value for the reference variable in the sensing circuit for each sensing cycle of the memory device.

Abstract translation: 在存储器件中采用磨损均衡技术，使得存储器块的循环历史由代表性存储器单元或少量代表性存储器单元的循环历史来表示。 控制逻辑块跟踪一个或多个代表性存储器单元的循环历史。 在存储器件内提供了表示用于感测电路的参考变量的最佳值的预测偏移作为循环历史的函数的表格。 在感测存储器单元之前，控制逻辑块检查一个或多个代表性存储器单元中的循环总数，并调整感测电路中参考变量的值，从而为感测中的参考变量提供最佳值 电路用于存储器件的每个感测周期。