公开(公告)号：US09768059B1

公开(公告)日：2017-09-19

申请号：US15092693

申请日：2016-04-07

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Teddie P. Magbitang ,  Daniel P. Sanders ,  Kristin Schmidt ,  Ankit Vora

IPC: G03F7/004 ,  H01L21/768 ,  C08G81/02 ,  C23F1/00 ,  G03F7/20 ,  G03F7/40 ,  G03F7/00 ,  G03F7/16 ,  G03F7/32 ,  B82Y40/00 ,  H01L21/3065 ,  H01L21/027 ,  B82Y10/00 ,  H01L21/02

CPC classification number: H01L21/0274 ,  B82Y10/00 ,  B82Y40/00 ,  C08G81/027 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/165 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0271 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/76816

Abstract: High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.

公开(公告)号：US09632408B1

公开(公告)日：2017-04-25

申请号：US15291689

申请日：2016-10-12

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  Tokyo Electron Limited

Inventor： Hongyun Cottle ,  Cheng Chi ,  Chi-Chun Liu ,  Kristin Schmidt

IPC: G03F7/00 ,  C09K13/00 ,  H01L21/302 ,  C30B29/58 ,  H01L21/311 ,  C30B19/12 ,  C30B33/08 ,  B81C1/00

CPC classification number: G03F7/0002 ,  B81C1/00031 ,  B81C1/00396 ,  B81C1/00531 ,  B81C2201/0149 ,  C09K13/00 ,  C30B1/04 ,  C30B7/005 ,  C30B29/58 ,  C30B33/08 ,  H01L21/02118 ,  H01L21/0271 ,  H01L21/302 ,  H01L21/31058 ,  H01L21/31133

Abstract: Graphoepitaxy directed self-assembly methods generally include grafting a conformal layer of a polymer brush onto a topographic substrate. A planarization material, which functions as a sacrificial material is coated onto the topographic substrate. The planarization material is etched back to a top surface of the topographic substrate, wherein the etch back removes the polymer brush from the top surfaces of the topographic substrate. The remaining portion of the polymer brush is protected by the remaining planarization material below the top surface of the topographic substrate, which can be removed with a solvent to provide the topographic substrate with a conformal polymer brush below the top surface of the topographic substrate. The substrate is then coated with a block copolymer and annealed to direct self-assembly of the block copolymer. The methods mitigate island and/or hole defect formation.