公开(公告)号：US20180138084A1

公开(公告)日：2018-05-17

申请号：US15863675

申请日：2018-01-05

Applicant: International Business Machines Corporation

Inventor： James P. Doyle ,  Geraud Dubois ,  Nicholas C. Fuller ,  Teddie P. Magbitang ,  Robert D. Miller ,  Sampath Purushothaman ,  Will Volksen

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76835 ,  H01L21/31144 ,  H01L21/76808 ,  H01L21/76811 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53295

Abstract: A process comprises insulating a porous low k substrate with an organic polymer coating where the polymer does not penetrate or substantially penetrate the pores of the substrate, e.g., pores having a pore diameter of about one nm to about 5 nm, thereby completely or substantially mitigating the potential for capacitance increase of the substrate. The substrate comprises porous microcircuit substrate materials with surface pores optionally opening into subsurface pores. The organic polymer has a molecular weight greater than about 5,000 to greater than about 10,000 and a glass transition temperature greater than about 200° C. up to about the processing temperature required for forming the imaging layer and antireflective layer in a microcircuit, e.g., greater than about 225° C. The invention includes production of a product by this process and an article of manufacture embodying these features.

公开(公告)号：US20170114246A1

公开(公告)日：2017-04-27

申请号：US14919070

申请日：2015-10-21

Applicant: International Business Machines Corporation

Inventor： Noel Arellano ,  Joy Cheng ,  Teddie P. Magbitang ,  Jed W. Pitera ,  Daniel P. Sanders ,  Kristin Schmidt ,  Hoa D. Truong ,  Ankit Vora

IPC: C09D169/00 ,  C08J7/04 ,  C09D167/04 ,  C08G63/64 ,  C08G63/08

CPC classification number: C09D169/005 ,  C08F212/08 ,  C08G63/08 ,  C08G63/64 ,  C08G63/6822 ,  C08G64/18 ,  C08J7/047 ,  C08J2333/12 ,  C08J2467/04 ,  C08J2469/00 ,  C09D125/08 ,  C09D153/00 ,  C09D167/04 ,  C09D169/00 ,  G03F7/0002

Abstract: Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L′ joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L′ are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L′ has a lower surface energy than each of the polymer blocks.

公开(公告)号：US10370556B2

公开(公告)日：2019-08-06

申请号：US15375418

申请日：2016-12-12

Applicant: International Business Machines Corporation

Inventor： Geraud J. M. Dubois ,  Krystelle Lionti ,  Teddie P. Magbitang ,  Willi Volksen

IPC: C09D133/12 ,  C09D125/06 ,  B05D3/10 ,  B05D5/00 ,  B05D1/00 ,  B05D3/02

Abstract: Disclosed is a method for mechanically anchoring polymers on the surface of a porous substrate by trapping polymer chains within the pores of the substrate under capillary forces. Surface modification of the porous substrate is achieved by anchoring one end of the polymer chains within the pores while one or more other ends of the polymer chains dangle from the surface of the porous substrate. The method provides a unique way of modifying the surface of a material without chemical reactions or precursor-substrate interactions.

公开(公告)号：US20150311066A1

公开(公告)日：2015-10-29

申请号：US14261357

申请日：2014-04-24

Applicant: International Business Machines Corporation

Inventor： Robert L. Bruce ,  Geraud J. Dubois ,  Theo J. Frot ,  Krystelle Lionti ,  Teddie P. Magbitang ,  Willi Volksen

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02315 ,  H01L21/02203 ,  H01L21/3105 ,  H01L21/31116 ,  H01L21/31127 ,  H01L21/324 ,  H01L21/76802 ,  H01L21/76826

Abstract: The present invention describes a process to modify a top portion of a porous ultra low-k (ULK) material in order to maximize porosity filling with a filling material that initially displayed low compatibility with the ULK material. Surface modification is achieved by a plasma treatment, enhancing the compatibility between the ULK surface and the filling material. The invention obtains high filling levels with minimum modification to the ULK material, as only a thin top portion is modified without significant pore sealing.

Abstract translation: 本发明描述了一种修饰多孔超低k（ULK）材料的顶部的方法，以便最初用与ULK材料低相容性的填充材料最大化孔隙填充。 通过等离子体处理实现表面改性，增强ULK表面和填充材料之间的相容性。 本发明通过对ULK材料的最小修改获得高填充量，因为只有薄的顶部部分被修改而没有显着的孔密封。

公开(公告)号：US09058983B2

公开(公告)日：2015-06-16

申请号：US13919725

申请日：2013-06-17

Applicant: International Business Machines Corporation

Inventor： Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Willi Volksen

IPC: B44C1/22 ,  H01L21/02

CPC classification number: H01L21/0226 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/3105 ,  H01L21/31144 ,  H01L21/76802 ,  H01L21/76826

Abstract: In some examples, a process to generate an in-situ hardmask layer on porous dielectric materials using the densifying action of a plasma in conjunction with a sacrificial polymeric filler, the latter which enables control of the hardmask thickness as well as a well-defined interface with the underlying ILD.

Abstract translation: 在一些实例中，使用等离子体与牺牲聚合物填料结合的致密化作用在多孔电介质材料上产生原位硬掩模层的方法，后者能够控制硬掩模厚度以及良好界定的界面 与底层ILD。

公开(公告)号：US08871632B2

公开(公告)日：2014-10-28

申请号：US13655599

申请日：2012-10-19

Applicant: International Business Machines Corporation

Inventor： Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Willi Volksen

IPC: H01L21/4763 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/02

CPC classification number: H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76828 ,  H01L2221/1047

Abstract: In one embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, includes operations comprising: providing a structure comprising a first layer overlying a substrate, where the first layer comprises a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material comprises a polymer and at least one additive, where the at least one additive comprises at least one of a surfactant, a high molecular weight polymer and a solvent (e.g., a high boiling point solvent); and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.

Abstract translation: 在一个实施例中，机器可读的程序存储设备有形地体现了可由机器执行的用于执行操作的指令程序，包括：提供包括覆盖衬底的第一层的结构，其中第一层包括电介质材料 具有多个孔; 将填充材料施加到第一层的表面，其中填充材料包含聚合物和至少一种添加剂，其中至少一种添加剂包含表面活性剂，高分子量聚合物和溶剂中的至少一种（例如， 高沸点溶剂）; 并且在施加填充材料之后，加热该结构以使得填充材料能够在第一层的区域上均匀地至少部分地填充多个孔，其中加热该结构导致剩余的填充材料均匀地留在表面上 第一层

公开(公告)号：US20130045608A1

公开(公告)日：2013-02-21

申请号：US13655599

申请日：2012-10-19

Applicant: International Business Machines Corporation

Inventor： Geraud Jean-Michel Dubois ,  Theo J. Frot ,  Teddie P. Magbitang ,  Willi Volksen

IPC: H01L21/312

CPC classification number: H01L21/3105 ,  H01L21/02203 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76822 ,  H01L21/76826 ,  H01L21/76828 ,  H01L2221/1047

Abstract: In one embodiment, a program storage device readable by a machine, tangibly embodying a program of instructions executable by the machine for performing operations, includes operations comprising: providing a structure comprising a first layer overlying a substrate, where the first layer comprises a dielectric material having a plurality of pores; applying a filling material to a surface of the first layer, where the filling material comprises a polymer and at least one additive, where the at least one additive comprises at least one of a surfactant, a high molecular weight polymer and a solvent (e.g., a high boiling point solvent); and after applying the filling material, heating the structure to enable the filling material to at least partially fill the plurality of pores uniformly across an area of the first layer, where heating the structure results in residual filling material being uniformly left on the surface of the first layer.

Abstract translation: 在一个实施例中，机器可读的程序存储设备有形地体现了可由机器执行的用于执行操作的指令程序，包括：提供包括覆盖衬底的第一层的结构，其中第一层包括电介质材料 具有多个孔; 将填充材料施加到第一层的表面，其中填充材料包含聚合物和至少一种添加剂，其中至少一种添加剂包含表面活性剂，高分子量聚合物和溶剂中的至少一种（例如， 高沸点溶剂）; 并且在施加填充材料之后，加热该结构以使得填充材料能够在第一层的区域上均匀地至少部分地填充多个孔，其中加热该结构导致剩余的填充材料均匀地留在表面上 第一层

公开(公告)号：US20240409692A1

公开(公告)日：2024-12-12

申请号：US18329722

申请日：2023-06-06

Applicant: International Business Machines Corporation

Inventor： Teddie P. Magbitang ,  Sushumna Iruvanti ,  Rudy J. Wojtecki ,  Ishwar Singh

IPC: C08G77/16 ,  C08K3/013

Abstract: A thermal interface material (TIM) that includes a hydroxy-terminated polysiloxane blended with a catalyst generator is disclosed. When the catalyst generator is activated by a thermal stimulus, it catalyzes cleavage of silicon-oxygen bonds in the hydroxy-terminated polysiloxane. A semiconductor package and a computing device containing the TIM are also disclosed. Additionally, a method of providing a TIM, as well as a semiconductor package containing the TIM are disclosed. Providing the TIM includes blending a hydroxy-terminated polysiloxane with a catalyst generator that cleaves silicon-oxygen bonds when activated by a thermal stimulus.

公开(公告)号：US20230257513A1

公开(公告)日：2023-08-17

申请号：US17651301

申请日：2022-02-16

Applicant: International Business Machines Corporation

Inventor： Rudy J. Wojtecki ,  Gregory Breyta ,  Kamal K. Sikka ,  Teddie P. Magbitang

IPC: C08G59/50 ,  C08G59/64 ,  C08G59/24 ,  C08L63/00

CPC classification number: C08G59/5033 ,  C08G59/64 ,  C08G59/24 ,  C08L63/00 ,  C08L2203/20

Abstract: A composition, process, and device are disclosed. The composition includes a polymer formed by reacting an epoxy compound with an amine curing agent. The epoxy compound comprises a Diels-Alder dimer and an ester moiety. The process includes providing a polymer formed by reacting the epoxy compound with the amine curing agent. The device includes a material that includes the polymer.

公开(公告)号：US20170294341A1

公开(公告)日：2017-10-12

申请号：US15092693

申请日：2016-04-07

Applicant: International Business Machines Corporation

Inventor： Chi-Chun Liu ,  Teddie P. Magbitang ,  Daniel P. Sanders ,  Kristin Schmidt ,  Ankit Vora

IPC: H01L21/768 ,  C23F1/00 ,  C08G81/02

CPC classification number: H01L21/0274 ,  B82Y10/00 ,  B82Y40/00 ,  C08G81/027 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/165 ,  G03F7/20 ,  G03F7/2022 ,  G03F7/2059 ,  G03F7/32 ,  G03F7/40 ,  H01L21/02112 ,  H01L21/0271 ,  H01L21/3065 ,  H01L21/31144 ,  H01L21/76816

Abstract: High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.