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30 条记录 (耗时 0.016 秒)

    Asymmetric chalcogenide device
    21.
    发明申请
    Asymmetric chalcogenide device 审中-公开
    不对称硫族化物装置

    公开(公告)号：US20080113464A1

    公开(公告)日：2008-05-15

    申请号：US11545234

    申请日：2006-10-10

    申请人： Semyon D. Savransky

    发明人： Semyon D. Savransky

    IPC分类号： H01L21/00 ,  H01L21/06

    CPC分类号： H01L45/04 ,  G11C13/0004 ,  H01L45/06 ,  H01L45/1253 ,  H01L45/144

    摘要： A semiconductor device with S-type negative differential resistance (e.g., phase change memory or threshold switch) may be formed with an asymmetric i-v curve. The asymmetric nature may be achieved by using a lower electrode formed of a semiconductor material such as doped amorphous or polycrystalline semiconductor. The resulting device may have a threshold voltage and leakage current that depend on the polarity of the applied electrical signal. In some embodiments, an ovonic threshold switch with an asymmetric i-v curve may be combined with an ovonic memory cell with an asymmetric i-v curve.

    摘要翻译： 可以用非对称i-v曲线形成具有S型负差分电阻（例如，相变存储器或阈值开关）的半导体器件。 可以通过使用由诸如掺杂的非晶或多晶半导体的半导体材料形成的下电极来实现非对称性质。 所得到的器件可能具有取决于所施加的电信号的极性的阈值电压和漏电流。 在一些实施例中，具有不对称i-v曲线的卵形阈值开关可以与具有不对称i-v曲线的超声波存储器单元组合。

    Reducing drift in chalcogenide devices
    23.
    发明授权
    Reducing drift in chalcogenide devices 有权
    减少硫族化物装置中的漂移

    公开(公告)号：US08164949B2

    公开(公告)日：2012-04-24

    申请号：US13072002

    申请日：2011-03-25

    申请人： Semyon D. Savransky

    发明人： Semyon D. Savransky

    IPC分类号： G11C11/00 ,  H01L47/00

    CPC分类号： H01L45/06 ,  H01L45/04 ,  H01L45/1253 ,  H01L45/126 ,  H01L45/144

    摘要： Chalcogenide materials conventionally used in chalcogenide memory devices and ovonic threshold switches may exhibit a tendency called drift, wherein threshold voltage or resistance changes with time. By providing a compensating material which exhibits an opposing tendency, the drift may be compensated. The compensating material may be mixed into a chalcogenide, may be layered with chalcogenide, may be provided with a heater, or may be provided as part of an electrode in some embodiments. Both chalcogenide and non-chalcogenide compensating materials may be used.

    摘要翻译： 通常用于硫族化物记忆装置和超声波阈值开关的硫属化物材料可能会出现称为漂移的趋势，其中阈值电压或电阻随时间而变化。 通过提供具有相反趋势的补偿材料，可以补偿漂移。 补偿材料可以混合成硫族化物，可以用硫族化物层叠，可以设置有加热器，或者可以在一些实施方案中提供作为电极的一部分。 可以使用硫族化物和非硫族化物补偿材料。

    Phase change devices
    26.
    发明申请
    Phase change devices 审中-公开
    相变装置

    公开(公告)号：US20110079763A1

    公开(公告)日：2011-04-07

    申请号：US12924465

    申请日：2010-09-28

    申请人： Semyon D. Savransky

    发明人： Semyon D. Savransky

    IPC分类号： H01L45/00

    CPC分类号： H01L27/2409 ,  H01L27/2427 ,  H01L45/06 ,  H01L45/126 ,  H01L45/144

    摘要： The present invention is a phase change device with a heater and a selector (e.g., diode) separated by a phase-change alloy. The present invention will find applicability in electronic memory devices.

    摘要翻译： 本发明是一种具有加热器和由相变合金分离的选择器（例如二极管）的相变装置。 本发明将在电子存储器件中发现适用性。

    Method of cross-point memory programming and related devices
    27.
    发明申请
    Method of cross-point memory programming and related devices 审中-公开
    交叉点存储器编程方法及相关设备

    公开(公告)号：US20100284213A1

    公开(公告)日：2010-11-11

    申请号：US12800006

    申请日：2010-05-06

    申请人： Semyon D. Savransky

    发明人： Semyon D. Savransky

    IPC分类号： G11C11/00

    CPC分类号： G11C13/0069 ,  G11C11/5678 ,  G11C13/0004 ,  G11C13/0007 ,  G11C13/0011 ,  G11C13/0014 ,  G11C2013/0073 ,  G11C2013/0078 ,  G11C2013/0092 ,  G11C2213/72

    摘要： A reverse recovery current of a diode is used for programming a cross-point memory. Programming of a crossbar memory device, comprising a diode with preferably short charge carriers lifetime and a storage element by keeping the device at one polarity for a period of time and then switching it from first polarity to second polarity (e.g., forward to reverse polarity of the diode). Programming occurs due to diode's reverse recovery current. The value and duration of the recovery current pulse are selected to program the storage element into one of plurality of electrically distinguish states by variation of the level of current flowing through the device in the first polarity of applied bias voltage, by variation of the speed for changing the bias voltage from first polarity to second polarity, and by steady state value of the second polarity voltage applied to the device in one or more embodiments.

    摘要翻译： 二极管的反向恢复电流用于编程交叉点存储器。 横向存储器件的编程，包括具有优选短的电荷载流子寿命的二极管和存储元件，通过将器件保持在一个极性一段时间，然后将其从第一极性切换到第二极性（例如， 二极管）。 由于二极管的反向恢复电流而进行编程。 选择恢复电流脉冲的值和持续时间，以通过在所施加的偏置电压的第一极性中流过器件的电流的电平的变化，通过对所述存储元件的速度的变化来将存储元件编程为多个电区分状态之一 在一个或多个实施例中，将偏置电压从第一极性改变为第二极性，以及施加到器件的第二极性电压的稳态值。

    Phase change devices
    28.
    发明申请
    Phase change devices 审中-公开
    相变装置

    公开(公告)号：US20100283025A1

    公开(公告)日：2010-11-11

    申请号：US12800007

    申请日：2010-05-06

    申请人： Semyon D. Savransky

    发明人： Semyon D. Savransky

    IPC分类号： H01L45/00 ,  H01L21/04 ,  H01L21/06

    CPC分类号： H01L45/1246 ,  H01L45/06 ,  H01L45/144 ,  H01L45/1608

    摘要： A phase change device includes a native oxide grown on the surface of a first phase change alloy layer. The native oxide is punched through during the first electrical pulse applied between the device electrodes. An aperture created in the native oxide limit a region of localized heating during the device programming. A method for the phase change device fabrication includes a native oxide formation.

    摘要翻译： 相变装置包括在第一相变合金层的表面上生长的自然氧化物。 在施加在器件电极之间的第一电脉冲期间穿过自然氧化物。 在天然氧化物中产生的孔径在器件编程期间限制局部加热的区域。 用于相变装置制造的方法包括自然氧化物形成。

    Programming methods for phase-change memory
    29.
    发明申请
    Programming methods for phase-change memory 审中-公开
    相变存储器的编程方法

    公开(公告)号：US20100226168A1

    公开(公告)日：2010-09-09

    申请号：US12660783

    申请日：2010-03-03

    申请人： Semyon D. Savransky

    发明人： Semyon D. Savransky

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C7/04 ,  G11C13/0004 ,  G11C13/0069 ,  G11C2013/0092

    摘要： Set pulses with finite rise time that heat up phase change alloy between about nucleation temperature and about average of crystallization and melting temperatures are proposed for programming phase change memory from reset to set state in order to minimize energy during this transition and to achieve uniform set state distribution. Non-square reset pulses with finite rise time that heat up phase change alloy at or above melting temperature are proposed for programming phase change memory from set to reset state in order to improve cell endurance.

    摘要翻译： 提出将具有有限上升时间的脉冲设置为加热相变温度和大约平均结晶温度和熔融温度之间的相变合金，用于将相变存储器从复位到设置状态进行编程，以便在此过渡期间最小化能量并实现均匀的设定状态 分配。 提出了具有有限上升时间的非平方复位脉冲，用于将相变合金置于或高于熔解温度，以将相变存储器从置位状态设置为复位状态，以提高电池耐久性。

    Method of programming of phase-change memory and associated devices and materials
    30.
    发明申请
    Method of programming of phase-change memory and associated devices and materials 审中-公开
    相变存储器及相关设备和材料的编程方法

    公开(公告)号：US20100067290A1

    公开(公告)日：2010-03-18

    申请号：US12584821

    申请日：2009-09-14

    申请人： Semyon D. Savransky

    发明人： Semyon D. Savransky

    IPC分类号： G11C11/00 ,  G11C7/00

    CPC分类号： G11C13/0069 ,  G11C7/04 ,  G11C13/0004 ,  G11C2013/0092 ,  G11C2213/51

    摘要： A method of programming a phase-change memory (PCM) device to the high resistance reset state by means of pressure-induced amorphization. A train of few short pulses is applied to the PCM device produces high pressure on phase-change alloy (PCA). PCM device contains a PCA with easily deformed atomic structure by external pressure and materials mechanically contacted PCA. These materials have lower coefficients of thermal expansion and compressibility as well as higher coefficient of hardness than the corresponding coefficients of the PCA.

    摘要翻译： 通过压力诱导的非晶化将相变存储器（PCM）器件编程为高电阻复位状态的方法。 在PCM器件上施加一小串短脉冲在相变合金（PCA）上产生高压。 PCM装置包含PCA，外部压力容易变形的原子结构和材料机械接触PCA。 这些材料具有比PCA的相应系数更低的热膨胀系数和可压缩性，以及更高的硬度系数。