公开(公告)号：US11275110B2

公开(公告)日：2022-03-15

申请号：US16849868

申请日：2020-04-15

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Rainer Markus Schaller

IPC: G01R31/28 ,  G01R31/52

Abstract: The disclosure describes techniques for detecting failures or performance degradation of a device including an integrated circuit (IC) components in the field by including additional contacts, i.e. terminals, along with functional contacts of the circuit used for connecting the circuit to a system in which the circuit is a part. These additional contacts may be internal external to the package surface and may be used to measure dynamic changing electrical characteristics over time e.g. voltage, current, capacity, temperature and impedance. These electrical characteristics may be representative of one or more failure modes and may be treated as indicator for device state-of-health (SOH).

公开(公告)号：US20220065773A1

公开(公告)日：2022-03-03

申请号：US17407803

申请日：2021-08-20

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Rainer Markus Schaller

IPC: G01N21/17 ,  G01N29/24 ,  B81B7/02

Abstract: A photoacoustic sensor includes a first layer with an optical MEMS emitter; a second layer stacked over the first layer with a MEMS pressure pick-up and an optically transparent window, wherein the MEMS pressure pick-up and the optically transparent window are offset laterally with respect to one another; and a third layer stacked over the second layer with a cavity for a reference gas. The optical MEMS emitter transmits optical radiation along an optical path, wherein the optical path runs through the optically transparent window and the cavity for the reference gas, and wherein the MEMS pressure pick-up is outside the course of the optical path.

公开(公告)号：US20210325454A1

公开(公告)日：2021-10-21

申请号：US16849868

申请日：2020-04-15

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Rainer Markus Schaller

IPC: G01R31/28 ,  G01R31/52

Abstract: The disclosure describes techniques for detecting failures or performance degradation of a device including an integrated circuit (IC) components in the field by including additional contacts, i.e. terminals, along with functional contacts of the circuit used for connecting the circuit to a system in which the circuit is a part. These additional contacts may be internal external to the package surface and may be used to measure dynamic changing electrical characteristics over time e.g. voltage, current, capacity, temperature and impedance. These electrical characteristics may be representative of one or more failure modes and may be treated as indicator for device state-of-health (SOH).

公开(公告)号：US10852363B2

公开(公告)日：2020-12-01

申请号：US15864313

申请日：2018-01-08

Applicant: Infineon Technologies AG

Inventor： Klaus Elian ,  Rainer Markus Schaller

IPC: G01R15/20 ,  G01R33/02 ,  G01R33/00 ,  G01R19/00 ,  H01F7/02

Abstract: A semiconductor package may include a sensor chip to measure an amount of electrical current in a current medium. The sensor chip may include a first magnetic sensing element and a second magnetic sensing element. The semiconductor package may include a magnet that produces a magnetic field. The magnet may be arranged asymmetrically with respect to the first magnetic sensing element and the second magnetic sensing element such that a strength of the magnetic field at the first magnetic sensing element is different from a strength of the magnetic field at the second magnetic sensing element.

公开(公告)号：US20200233044A1

公开(公告)日：2020-07-23

申请号：US16250747

申请日：2019-01-17

Applicant: Infineon Technologies AG

Inventor： Jochen DANGELMAIER ,  Rainer Markus Schaller

IPC: G01R33/00 ,  G01R33/07 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31

Abstract: A current sensor device may include a routable molded lead frame that includes a molded substrate. The current sensor device may include a conductor and a semiconductor chip mounted to the molded substrate. The semiconductor chip may include a magnetic field sensor that is galvanically isolated from the conductor by the molded substrate and is configured to sense a magnetic field created by current flowing through the conductor. The current sensor device may include one or more leads configured to output a signal generated by the semiconductor chip. The one or more leads may be galvanically isolated from the conductor by the molded substrate.

公开(公告)号：US20200056910A1

公开(公告)日：2020-02-20

申请号：US16532680

申请日：2019-08-06

Applicant: Infineon Technologies AG

Inventor： Volker Strutz ,  Rainer Markus Schaller

IPC: G01D11/24 ,  G01R33/07

Abstract: A sensor package including a metal carrier and a sensor chip arranged on the metal carrier and having a first sensor element. In an orthogonal projection of the sensor chip onto a surface of the metal carrier, at least two edge sections of the sensor chip are free of overlap with the surface of the metal carrier. The sensor chip is designed to detect a magnetic field induced by an electric current flowing through a current conductor.

公开(公告)号：US10241088B2

公开(公告)日：2019-03-26

申请号：US15136469

申请日：2016-04-22

Applicant: Infineon Technologies AG

Inventor： Horst Theuss ,  Gottfried Beer ,  Sebastian Beer ,  Alfons Dehe ,  Franz Jost ,  Stefan Kolb ,  Guenther Ruhl ,  Rainer Markus Schaller

IPC: G01N29/24 ,  G01N29/032

Abstract: A photo-acoustic gas sensor includes a light emitter unit having a light emitter configured to emit a beam of light pulses with a predetermined repetition frequency and a wavelength corresponding to an absorption band of a gas to be sensed, and a detector unit having a microphone. The light emitter unit is arranged so that the beam of light pulses traverses an area configured to accommodate the gas. The detector unit is arranged so that the microphone can receive a signal oscillating with the repetition frequency.

公开(公告)号：US20180172739A1

公开(公告)日：2018-06-21

申请号：US15385694

申请日：2016-12-20

Applicant: Infineon Technologies AG

Inventor： Wolfgang Raberg ,  Goran Keser ,  Matthias Rose ,  Rainer Markus Schaller

IPC: G01R15/20 ,  G01R17/10 ,  G01R19/00

CPC classification number: G01R15/205 ,  G01R17/10

Abstract: Methods and devices related to current sensing are provided. Magnetoresistive sensor elements are provided on opposite sides of a conductor.

公开(公告)号：US12210706B2

公开(公告)日：2025-01-28

申请号：US17850026

申请日：2022-06-27

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Jochen Dangelmaier ,  Klaus Elian ,  Horst Theuss

IPC: G06F3/043 ,  G01N29/22 ,  G06F1/16 ,  H03K17/96

Abstract: An ultrasonic touch sensor is proposed for attachment to a casing, having a semiconductor chip including a substrate side and a component side, the semiconductor chip including an ultrasonic transducer element and the ultrasonic transducer element being arranged on the component side, having an acoustic coupling medium covering the semiconductor chip at least in the region of the ultrasonic transducer element, having electrical contact elements for controlling the ultrasonic transducer element, and the electrical contact elements being arranged on the component side of the semiconductor chip.

公开(公告)号：US12122667B2

公开(公告)日：2024-10-22

申请号：US18467897

申请日：2023-09-15

Applicant: Infineon Technologies AG

Inventor： Rainer Markus Schaller ,  Klaus Elian ,  Horst Theuss

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0051 ,  B81C1/00325 ,  B81B2203/033 ,  B81B2207/07 ,  B81B2207/096 ,  B81C2203/0118

Abstract: A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.