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公开(公告)号:US07555548B2
公开(公告)日:2009-06-30
申请号:US10819296
申请日:2004-04-07
申请人: Colin P. Winfield , Hubert R. Sieh , Ramin Ali Dousti , Teh Pao Liu , Shobha Singh , Hewad Benawa
发明人: Colin P. Winfield , Hubert R. Sieh , Ramin Ali Dousti , Teh Pao Liu , Shobha Singh , Hewad Benawa
IPC分类号: G06F15/173
CPC分类号: H04L43/00 , H04L41/0823 , H04L41/0866 , H04L41/5003
摘要: A method and apparatuses are provided for data collection from network elements in a network. A collector sends a data request to one of the network elements. The collector determines whether a condition exists regarding the network element. When the collector determines that the condition exists, the collector stops the data collection from the network element without affecting the data collection by the collector from other network elements, the data collection remains stopped until the collector is notified that the condition no longer exists, and the collector sends a message to the validator to inform the validator of the condition. In another aspect, a validator is informed of a configuration change of one of a group of network elements. The validator requests at least a portion of configuration information of the network element, determines optimum configuration parameters for data collection, and sends the optimum configuration parameters to a collector.
摘要翻译: 提供了一种用于从网络中的网元收集数据的方法和装置。 收集器向其中一个网络元素发送数据请求。 收集器确定是否存在关于网元的条件。 当收集器确定条件存在时,收集器停止从网元的数据收集,而不影响收集器与其他网元的数据收集,数据收集保持停止,直到收集器通知条件不再存在,并且 收集器向验证器发送一条消息,通知验证器的状态。 在另一方面,通知一个网络元件组中的一个的配置改变的验证器。 验证器请求网络元件的配置信息的至少一部分,确定数据收集的最佳配置参数,并将最佳配置参数发送给收集器。
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公开(公告)号:US20050228885A1
公开(公告)日:2005-10-13
申请号:US10819296
申请日:2004-04-07
申请人: Colin Winfield , Hubert Sieh , Ramin Dousti , Teh Liu , Shobha Singh , Hewad Benawa
发明人: Colin Winfield , Hubert Sieh , Ramin Dousti , Teh Liu , Shobha Singh , Hewad Benawa
IPC分类号: G06F15/173 , H04L12/24
CPC分类号: H04L43/00 , H04L41/0823 , H04L41/0866 , H04L41/5003
摘要: A method and apparatuses are provided for data collection from network elements in a network. A collector sends a data request to one of the network elements. The collector determines whether a condition exists regarding the network element. When the collector determines that the condition exists, the collector stops the data collection from the network element without affecting the data collection by the collector from other network elements, the data collection remains stopped until the collector is notified that the condition no longer exists, and the collector sends a message to the validator to inform the validator of the condition. In another aspect, a validator is informed of a configuration change of one of a group of network elements. The validator requests at least a portion of configuration information of the network element, determines optimum configuration parameters for data collection, and sends the optimum configuration parameters to a collector.
摘要翻译: 提供了一种用于从网络中的网元收集数据的方法和装置。 收集器向其中一个网络元素发送数据请求。 收集器确定是否存在关于网元的条件。 当收集器确定条件存在时,收集器停止从网络元素的数据收集,而不影响收集器从其他网络元素的数据收集,数据收集保持停止,直到收集器被通知该条件不再存在,并且 收集器向验证器发送一条消息,通知验证器的状态。 在另一方面,通知一个网络元件组中的一个的配置改变的验证器。 验证器请求网络元件的配置信息的至少一部分,确定数据收集的最佳配置参数,并将最佳配置参数发送给收集器。
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公开(公告)号:US6154598A
公开(公告)日:2000-11-28
申请号:US995445
申请日:1997-12-22
申请人: Pavle Gavrilovic , Anish K. Goyal , Hong Po , Shobha Singh
发明人: Pavle Gavrilovic , Anish K. Goyal , Hong Po , Shobha Singh
CPC分类号: H01S3/06716 , H01S3/094092 , H01S3/1603 , H01S3/1698
摘要: An optical waveguide laser, preferably a fiber laser, has unintentionally incorporated impurities disposed in the lasing medium which upconvert a portion of the lasing radiation to radiation of shorter wavelength, thereby introducing defects in the medium which result in increased absorption due to photodarkening. Suitable rare-earth co-dopants are intentionally incorporated during the manufacture of the fiber for effectively shunting the upconversion process. The lifetime of the fiber laser is thereby increased.
摘要翻译: 光波导激光器,优选光纤激光器,无意中并入设置在激光介质中的杂质,其将激光辐射的一部分上转换成较短波长的辐射,从而在介质中引入缺陷,导致由于光暗化而增加的吸收。 在制造纤维期间有意地掺入合适的稀土共掺杂剂,以有效地分流上转换过程。 光纤激光器的寿命由此增加。
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公开(公告)号:US5295146A
公开(公告)日:1994-03-15
申请号:US75861
申请日:1993-06-11
申请人: Pavle Gavrilovic , Shobha Singh
发明人: Pavle Gavrilovic , Shobha Singh
IPC分类号: H01S3/06 , H01S3/08 , H01S3/0941 , H01S3/109 , H01S3/16
CPC分类号: H01S3/0627 , H01S3/025 , H01S3/0604 , H01S3/08045 , H01S3/09415 , H01S3/109 , H01S3/1603 , H01S3/1673
摘要: Novel solid state gain mediums provide monolithic lasers with short cavity lengths and with the ability to efficiently lase in the lowest order TEM.sub.00 mode. Unoptimized optical power conversion efficiency of 35% has been achieved with the novel solid state gain mediums in monolithic lasers that have a cavity length as short as 0.5 mm. With proper values for the output mirror reflectivity and low loss host crystals, the optical power conversion efficiency is approximately 50%. Moreover, when in optical contact with a frequency doubling optically non linear crystal, the novel solid state gain mediums in the monolithic lasers can produce coherent visible light.
摘要翻译: 新型固态增益介质提供具有短腔长度的单片激光器,并具有以最低阶TEM00模式有效驱动的能力。 在单体激光器中具有短达0.5mm的空腔长度的新型固态增益介质已经实现了35%的未优化的光功率转换效率。 对于输出镜反射率和低损耗主晶体的适当值,光功率转换效率约为50%。 此外,当与倍频光学非线性晶体光学接触时,单片激光器中的新型固态增益介质可以产生相干可见光。
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公开(公告)号:US5280534A
公开(公告)日:1994-01-18
申请号:US22483
申请日:1993-02-25
申请人: Pavle Gavrilovic , Shobha Singh
发明人: Pavle Gavrilovic , Shobha Singh
摘要: A crystalline material for use in a solid state tunable laser is YAG:Mn wherein the Mn is predominantly trivalent. The laser is tunable in the yellow-orange range (0.59-0.63 .mu.m) and the near infrared range (1.04-1.2 .mu.m).
摘要翻译: 用于固态可调激光器的结晶材料是YAG:Mn,其中Mn主要是三价的。 激光可以在黄橙色范围(0.59-0.63(my)m)和近红外范围(1.04-1.2(my)m))内调节。
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公开(公告)号:US5166948A
公开(公告)日:1992-11-24
申请号:US718344
申请日:1991-06-19
申请人: Pavle Gavrilovic , Shobha Singh
发明人: Pavle Gavrilovic , Shobha Singh
CPC分类号: C09K11/7772 , C09K11/7771 , G02F2/02 , G06K15/1247
摘要: An up converting method and apparatus includes a crystalline structure responsive to light emitted from pump light for producing visible and/or ultraviolet light therefrom which is of a shorter wavelength than the pump light. This crystalline structure comprises a composition containing active ions of trivalent rare earth elements and a host material of either anhydrous rare earth halides or rare earth oxysulfides. This crystalline structure is represented by the atomic formula M.sub.(1-x) R.sub.x Z.sub.3 or M.sub.2(1-x) R.sub.2x O.sub.2 S where M comprises at least one rare earth element selected from the group comprising cerium, gadolinium, yttrium, lanthanum, and mixtures thereof, R is a dopant selected from the group comprising neodymium, thulium, erbium, holmium, samarium, and mixtures thereof, x is a value in the range from 0.005 to 1.0, and Z is a halogen selected from the group comprising chlorine, bromine, and iodine. When optically pumped, the crystalline structure produces visible and/or ultraviolet light by either a direct or indirect two step up conversion process. An electronic printing apparatus can also use the up converting crystalline structures to expose photosensitive media in the manner of this invention.
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公开(公告)号:US4738934A
公开(公告)日:1988-04-19
申请号:US864198
申请日:1986-05-16
申请人: Wilbur D. Johnston, Jr. , Judith A. Long , Albert T. Macrander , Bertram Schwartz , Shobha Singh
发明人: Wilbur D. Johnston, Jr. , Judith A. Long , Albert T. Macrander , Bertram Schwartz , Shobha Singh
IPC分类号: H01L27/14 , H01L21/205 , H01L21/265 , H01L21/322 , H01L21/324 , H01L21/337 , H01L21/338 , H01L27/15 , H01L29/78 , H01L29/808 , H01L29/812 , H01L31/10 , H01L21/24
CPC分类号: H01L21/26546 , H01L21/3245
摘要: Epitaxial layers of semi-insulating InP grown by MOCVD on conducting InP wafers make excellent substrates for III-V semiconductor devices. Particularly appealing is the low defect density obtained because of the conducting InP wafers and excellent insulating characteristics of the semi-insulating InP layer. The invention is a procedure for doping the insulating layer by ion implantation. Such a procedure is unusually advantageous for fabricating a variety of devices including MISFETs, MESFETs and JFETs.
摘要翻译: 通过MOCVD在导电InP晶片上生长的半绝缘InP的外延层为III-V半导体器件提供了优异的基板。 由于导电InP晶片获得的低缺陷密度和半绝缘InP层的优异的绝缘特性,特别吸引人。 本发明是通过离子注入来掺杂绝缘层的方法。 这种方法对于制造包括MISFET,MESFET和JFET的各种器件是非常有利的。
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公开(公告)号:US5388114A
公开(公告)日:1995-02-07
申请号:US210037
申请日:1994-03-17
CPC分类号: H01S3/109 , G02F1/37 , H01S2302/00 , H01S3/0604 , H01S3/0627 , H01S3/1095 , H01S3/113
摘要: A diode-pumped monolithic laser is fabricated from a self-doubling host material co-doped with two ionic species, where one ionic dopant converts pump radiation to continuous radiation at a fundamental frequency and the other dopant acts as a saturable absorber to Q-switch the fundamental radiation which is then frequency doubled to produce pulsed high-intensity green light, the green light being either outputted or further frequency-doubled, into pulsed coherent UV radiation, by means of a non-linear crystal.
摘要翻译: 二极管泵浦的单片激光器由共同掺杂两种离子物质的自加倍主体材料制成,其中一个离子掺杂剂将泵浦辐射转换成基频的连续辐射,另一个掺杂剂作为Q开关的饱和吸收剂 基本辐射然后被倍频以产生脉冲高强度绿光,绿色光被输出或进一步加倍,通过非线性晶体进入脉冲相干UV辐射。
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