公开(公告)号：US20130237036A1

公开(公告)日：2013-09-12

申请号：US13604183

申请日：2012-09-05

申请人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Hisashi YOSHIDA ,  Naoharu SUGIYAMA ,  Shinya NUNOUE

IPC分类号： H01L21/02

CPC分类号： H01L21/02389 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

摘要： According to one embodiment, a method for manufacturing a nitride semiconductor layer is disclosed. The method can include forming a first lower layer on a major surface of a substrate and forming a first upper layer on the first lower layer. The first lower layer has a first lattice spacing along a first axis parallel to the major surface. The first upper layer has a second lattice spacing along the first axis larger than the first lattice spacing. At least a part of the first upper layer has compressive strain. A ratio of a difference between the first and second lattice spacing to the first lattice spacing is not less than 0.005 and not more than 0.019. A growth rate of the first upper layer in a direction parallel to the major surface is larger than that in a direction perpendicular to the major surface.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体层的方法。 该方法可以包括在基底的主表面上形成第一下层，并在第一下层上形成第一上层。 第一下层沿着平行于主表面的第一轴线具有第一格子间距。 第一上层具有沿着第一轴线的第二格子间距大于第一格子间距。 第一上层的至少一部分具有压缩应变。 第一和第二格子间隔之间的差与第一格子间隔的比率不小于0.005且不大于0.019。 第一上层在与主表面平行的方向上的生长速率大于垂直于主表面的方向的生长速率。

公开(公告)号：US20120298952A1

公开(公告)日：2012-11-29

申请号：US13406770

申请日：2012-02-28

申请人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

发明人： Toshiki HIKOSAKA ,  Yoshiyuki HARADA ,  Maki SUGAI ,  Shinya NUNOUE

IPC分类号： H01L33/06 ,  H01L21/20 ,  H01L29/38

CPC分类号： H01L33/20 ,  H01L33/0075 ,  H01L33/12 ,  H01L33/32 ,  H01L33/48

摘要： According to an embodiment, a semiconductor light emitting device includes a foundation layer, a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The foundation layer has an unevenness having recesses, side portions, and protrusions. A first major surface of the foundation layer has an overlay-region. The foundation layer has a plurality of dislocations including first dislocations whose one ends reaching the recess and second dislocations whose one ends reaching the protrusion. A proportion of a number of the second dislocations reaching the first major surface to a number of all of the second dislocations is smaller than a proportion of a number of the first dislocations reaching the first major surface to a number of all of the first dislocations. A number of the dislocations reaching the overlay-region of the first major surface is smaller than a number of all of the first dislocations.

摘要翻译： 根据实施例，半导体发光器件包括基底层，第一半导体层，发光层和第二半导体层。 基底层具有凹部，侧部和突起部的凹凸。 基础层的第一主表面具有覆盖区域。 基底层具有多个位错，其包括一端到达凹部的第一位错和一端到达突起的第二位错。 到达第一主表面的第二位错的数量与所有第二位错的数量的比例小于到达第一主表面的第一位错的数量与所有第一位错的数量的比例。 到达第一主表面的覆盖区域的多个位错小于所有第一位错的数量。

公开(公告)号：US20120295377A1

公开(公告)日：2012-11-22

申请号：US13222238

申请日：2011-08-31

申请人： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

发明人： Taisuke SATO ,  Naoharu SUGIYAMA ,  Tomonari SHIODA ,  Toshiki HIKOSAKA ,  Shinya NUNOUE

IPC分类号： H01L33/60

CPC分类号： H01L33/0079 ,  H01L33/22

摘要： According to one embodiment, a method is disclosed for manufacturing a nitride semiconductor device. The method can include removing a growth substrate from a structure body by using a first treatment material. The structure body has the growth substrate, a buffer layer formed on the growth substrate, and the nitride semiconductor layer formed on the buffer layer. A support substrate is bonded to the nitride semiconductor layer. The method can include reducing thicknesses of the buffer layer and the nitride semiconductor layer by using a second treatment material different from the first treatment material after removing the growth substrate.

摘要翻译： 根据一个实施例，公开了一种用于制造氮化物半导体器件的方法。 该方法可以包括通过使用第一处理材料从结构体移除生长衬底。 结构体具有生长衬底，形成在生长衬底上的缓冲层和形成在缓冲层上的氮化物半导体层。 支撑基板结合到氮化物半导体层。 该方法可以包括在除去生长衬底之后使用与第一处理材料不同的第二处理材料来减小缓冲层和氮化物半导体层的厚度。

公开(公告)号：US20120138985A1

公开(公告)日：2012-06-07

申请号：US13208658

申请日：2011-08-12

申请人： Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

发明人： Hiroshi ONO ,  Toshiki HIKOSAKA ,  Tomoko MORIOKA ,  Toshiyuki OKA ,  Shinya NUNOUE

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/06 ,  H01L33/20

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer and a light emitting part. The first semiconductor layer includes an n-type semiconductor layer. The second semiconductor layer includes a p-type semiconductor layer. The light emitting part is provided between the first semiconductor layer and the second semiconductor layer, and includes a plurality of barrier layers and a well layer provided between the plurality of barrier layers. The first semiconductor layer has a first irregularity and a second irregularity. The first irregularity is provided on a first major surface of the first semiconductor layer on an opposite side to the light emitting part. The second irregularity is provided on a bottom face and a top face of the first irregularity, and has a level difference smaller than a level difference between the bottom face and the top face.

摘要翻译： 根据一个实施例，半导体发光器件包括第一半导体层，第二半导体层和发光部分。 第一半导体层包括n型半导体层。 第二半导体层包括p型半导体层。 发光部分设置在第一半导体层和第二半导体层之间，并且包括多个势垒层和设置在多个势垒层之间的阱层。 第一半导体层具有第一不规则性和第二不规则性。 第一不规则性设置在第一半导体层的与发光部相反的一侧的第一主表面上。 第二不规则性设置在第一凹凸的底面和顶面上，并且具有小于底面与顶面之间的水平差的水平差。