Opening and Closing Apparatus For Small Image Photographing Devices
    21.
    发明申请
    Opening and Closing Apparatus For Small Image Photographing Devices 审中-公开
    小图像拍摄装置的打开和关闭装置

    公开(公告)号:US20080205879A1

    公开(公告)日:2008-08-28

    申请号:US11994902

    申请日:2006-04-21

    申请人: Jae-Young Park

    发明人: Jae-Young Park

    IPC分类号: G03B9/20 G03B9/08

    CPC分类号: H04N5/2254 G03B15/02

    摘要: Disclosed is a shutter apparatus for small cameras. According to the first embodiment of the invention, a shutter housing is mounted in an exposure aperture formed in a main body. The shutter housing has a through-hole communicated with the exposure aperture. A shutter panel is pivotably mounted inside the shutter housing so as to open and close the through-hole. A pivot lever is rotatably installed inside the shutter housing and engaged with the shutter panel such that the shutter panel is pivoted to open and close the through-hole. Thus, the opening is opened only when the camera is used to take a picture, and otherwise the opening is closed, thereby efficiently preventing introduction of foreign matters into the inside of the camera.

    摘要翻译: 公开了一种小型照相机的快门装置。 根据本发明的第一实施例,在主体中形成的曝光孔中安装有挡板外壳。 闸门壳体具有与曝光孔连通的通孔。 快门面板可枢转地安装在活门壳体的内部,以便打开和关闭通孔。 枢转杠杆可旋转地安装在闸门壳体内部并与挡板面板接合,使得挡板面板枢转以打开和关闭通孔。 因此,仅当照相机用于拍摄照片时才打开开口,否则打开关闭,从而有效地防止异物进入照相机的内部。

    Method for controlling routing information for intellectual peripherals in subscriber-based ring-back-tone-service
    22.
    发明授权
    Method for controlling routing information for intellectual peripherals in subscriber-based ring-back-tone-service 有权
    用于基于用户的回铃音服务中智能外设路由信息的控制方法

    公开(公告)号:US07248851B2

    公开(公告)日:2007-07-24

    申请号:US10525922

    申请日:2003-08-07

    IPC分类号: H04M9/00 H04M3/42 H04B1/38

    摘要: A method for controlling routing information for intellectual peripherals (IPs) in a subscriber-based ring-back-tone service. The routing information to be routed to IPs (50) corresponding to subscribers is classified on a subscriber telephone number-by-number basis, a subscriber telephone office number-by-number basis, a subscriber telephone office number group-by-group basis or a subscriber's major activity area-by-area basis according to a selection. The classified routing information is set and registered in a home location register (HLR) (10). When the HLR (10) receives a location registration request message from a terminal of an arbitrary subscriber, a corresponding routing information item to be routed to an IP (50) corresponding to the subscriber's terminal among the classified, set and registered routing information is contained within a response message to the location registration request message, and the response message is provided to a terminating mobile switching center (T MSC) (32).

    摘要翻译: 一种在基于用户的回铃音服务中控制智能外设(IP)的路由信息​​的方法。 要路由到与用户相对应的IP(50)的路由信息​​按用户电话号码分类,逐个用户电话号码,逐个用户电话号码或者 根据选择,用户的主要活动逐区。 分类路由信息被设置并登记在归属位置寄存器(HLR)(10)中。 当HLR(10)从任意用户的终端接收到位置注册请求消息时,将包含要分配,设置和登记的路由信息​​中的对应于用户终端的IP(50)的相应路由选择信息项目 在到位置登记请求消息的响应消息内,向终端移动交换中心(T MSC)(32)提供响应消息。

    Method of forming a layer and method of manufacturing a semiconductor device using the same
    23.
    发明申请
    Method of forming a layer and method of manufacturing a semiconductor device using the same 审中-公开
    形成层的方法和使用其制造半导体器件的方法

    公开(公告)号:US20070022941A1

    公开(公告)日:2007-02-01

    申请号:US11494566

    申请日:2006-07-28

    IPC分类号: C30B15/14

    CPC分类号: C30B29/06 C30B1/023

    摘要: In a method of forming a layer having a lower electrical resistance and a method of manufacturing a semiconductor device, a first layer may be formed on a single crystalline substrate using amorphous silicon doped with impurities. A heat treatment may be performed on the single crystalline substrate at a temperature of about 550° C. to about 600° C. to convert the first layer into a second layer including a single crystalline silicon film transformed from a lower portion of the first layer contacting the single crystalline substrate and a polysilicon film transformed from an upper portion of the first layer. The layer may be formed at a relatively low temperature by a selective epitaxial growth process, and thus degradation or damage to a semiconductor device, which may be generated in a high temperature process, may be reduced.

    摘要翻译: 在形成具有较低电阻的层的方法和制造半导体器件的方法中,可以使用掺杂有杂质的非晶硅在单晶衬底上形成第一层。 可以在约550℃至约600℃的温度下对单晶衬底进行热处理,以将第一层转变成第二层,该第二层包括从第一层的下部变换的单晶硅膜 使所述单晶衬底和从所述第一层的上部变换的多晶硅膜接触。 可以通过选择性外延生长工艺在相对低的温度下形成该层,从而可以降低在高温过程中可能产生的对半导体器件的劣化或损坏。

    Method and apparatus for managing presenting and changing ring-back sounds in subscriber-based ring-back sound service
    24.
    发明申请
    Method and apparatus for managing presenting and changing ring-back sounds in subscriber-based ring-back sound service 有权
    在基于用户的回铃声服务中管理呈现和改变回铃声的方法和装置

    公开(公告)号:US20050207555A1

    公开(公告)日:2005-09-22

    申请号:US10524098

    申请日:2003-08-07

    CPC分类号: H04M3/42017 H04M3/36

    摘要: Disclosed herein is a method and apparatus for managing ring-back sounds in a subscriber-based ring-back sound service. The method includes the first step of storing common ring-back sounds and reporting details of use of the common ring-back sounds, the second step of storing individual ring-back sounds and reporting details of use of the individual ring-back sounds, and the third step of statistically compiling the reported details of use and determining whether to maintain storage of the ring-back sounds based up the statistically complied details. A method and apparatus for presenting and changing ring-back sounds based upon the ring-back sound managing method and apparatus are provided.

    摘要翻译: 本文公开了一种用于在基于用户的回铃声服务中管理回铃声的方法和装置。 该方法包括存储公共回铃声和报告使用公共回铃声的细节的第一步骤,存储各个回铃声的第二步骤和报告使用各个回铃声的细节,以及 统计编辑所报告的使用细节的第三步,并根据统计上的细节确定是否保持回铃声的存储。 提供了一种基于回铃声管理方法和装置呈现和改变回铃声的方法和装置。

    Automatic wide screen display method and apparatus for a TV set
    25.
    发明授权
    Automatic wide screen display method and apparatus for a TV set 失效
    电视机的自动宽屏显示方法及装置

    公开(公告)号:US6128044A

    公开(公告)日:2000-10-03

    申请号:US912479

    申请日:1997-08-18

    申请人: Jae-Young Park

    发明人: Jae-Young Park

    CPC分类号: H04N7/0122

    摘要: An automatic wide screen display apparatus and method of a TV set according to the present invention determine the presence of a wide screen video signal and detect an aspect ratio data of an inputted video signal based on the determination using a vertical synchronizing signal. The apparatus and method further perform communications using a protocol defined between a main microcomputer for controlling the screen deflection and an exclusive wide screen microcomputer for detecting the aspect ratio of the inputted video signal in order to automatically display the wide screen image in accordance with the inputted video signal, and control an integrated deflection device in accordance with the communication result to control the screen deflection.

    摘要翻译: 根据本发明的电视机的自动宽屏显示装置和方法基于使用垂直同步信号的确定来确定宽屏幕视频信号的存在并检测输入的视频信号的宽高比数据。 该装置和方法还使用在用于控制屏幕偏转的主微型计算机之间定义的协议和用于检测输入的视频信号的宽高比的专用宽屏微型计算机进行通信,以便根据所输入的自动显示宽屏幕图像 视频信号,并根据通信结果控制集成偏转装置,以控制屏幕偏转。

    Manufacturing method for semiconductor device
    27.
    发明授权
    Manufacturing method for semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号:US08759182B2

    公开(公告)日:2014-06-24

    申请号:US13459740

    申请日:2012-04-30

    IPC分类号: H01L21/336

    摘要: A semiconductor device having an improved negative bias temperature instability lifetime characteristic is manufactured by forming a first insulating layer on a substrate, performing a first nitridation on the first insulating layer to form a second insulating layer, and sequentially performing a first and second anneal on the second insulating layer to form a third insulating layer, wherein the second anneal is performed at a higher temperature and with a different gas than the first anneal. A second nitridation is performed on the third insulating layer to form a fourth insulating layer, and a sequential third and fourth anneal on the fourth insulating layer forms a fifth insulating layer. The third anneal is performed at a higher temperature than the first anneal, and the fourth anneal is performed at a higher temperature than the second anneal and with a different gas than the third anneal.

    摘要翻译: 通过在基板上形成第一绝缘层,在第一绝缘层上进行第一次氮化,形成第二绝缘层,依次进行第一和第二退火,制造具有改善的负偏压温度不稳定寿命特性的半导体器件 第二绝缘层以形成第三绝缘层,其中所述第二退火在比所述第一退火更高的温度和不同的气体下进行。 在第三绝缘层上进行第二次氮化,以形成第四绝缘层,并且在第四绝缘层上顺序的第三和第四退火形成第五绝缘层。 第三退火在比第一退火更高的温度下进行,第四退火在比第二退火更高的温度下进行,并且具有比第三退火不同的气体。