公开(公告)号：US06946667B2

公开(公告)日：2005-09-20

申请号：US10299443

申请日：2002-11-19

申请人： Jiong Chen ,  Zhming Wan ,  Qing Qian

发明人： Jiong Chen ,  Zhming Wan ,  Qing Qian

IPC分类号： H01J37/317 ,  G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J2237/024 ,  H01J2237/04756 ,  H01J2237/057 ,  H01J2237/24405 ,  H01J2237/24528

摘要： An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

摘要翻译： 在本发明中公开了一种离子注入方法。 所公开的方法是用离子源从原始离子束路径移动的离子注入目标晶片。 该方法包括以下步骤：a）在目标晶片之前沿着原始离子束路径采用一组减速电极，用于使离子束减速和偏转到目标晶圆; 以及b）使用设置在所述离子源和所述一组减速电极之间的带电粒子偏转装置，用于使所述离子束偏离原始离子束路径，并以所述电极组的入射角向所述电极组突出以使所述电极组偏转 离子束返回到原始离子束路径，用于植入目标晶片。

公开(公告)号：US06338775B1

公开(公告)日：2002-01-15

申请号：US09633428

申请日：2000-08-07

申请人： Jiong Chen

发明人： Jiong Chen

IPC分类号： C23C1400

CPC分类号： C23C14/505 ,  C23C14/46 ,  C23C14/547

摘要： A thin film deposition apparatus and method are disclosed in this invention. The method includes a step of providing a vacuum chamber for containing a thin-film particle source for generating thin-film particles to deposit a thin-film on the substrates. The method further includes a step of containing a substrate holder in the vacuum chamber for holding a plurality of substrates having a thin-film deposition surface facing the thin-film particle source. The method further includes a step of providing a rotational means for rotating the substrate holder to rotate each of the substrates exposed to the thin-film particles for depositing a thin film thereon. And, the method further includes a step of providing a lateral moving means for laterally moving and controlling a duration of exposure time across a radial direction for each of the substrates for controlling thickness uniformity of the thin-film deposited on each of the substrates.

摘要翻译： 本发明公开了一种薄膜沉积设备和方法。 该方法包括提供真空室的步骤，该真空室容纳用于产生薄膜颗粒的薄膜颗粒源，以在基板上沉积薄膜。 该方法还包括在真空室中容纳用于保持具有面向薄膜颗粒源的薄膜沉积表面的多个基板的基板保持器的步骤。 该方法还包括提供旋转装置的步骤，旋转装置用于旋转衬底保持器以使暴露于薄膜颗粒的每个衬底旋转以在其上沉积薄膜。 并且，所述方法还包括提供横向移动装置的步骤，用于横向移动和控制用于每个基板的径向方向上的曝光时间的持续时间，以控制沉积在每个基板上的薄膜的厚度均匀性。

公开(公告)号：US06326746B1

公开(公告)日：2001-12-04

申请号：US09602765

申请日：2000-06-23

申请人： Jiong Chen

发明人： Jiong Chen

IPC分类号： H05H900

CPC分类号： H05H9/00

摘要： A new radio frequency (rf) linear accelerator (linac) is disclosed in this invention. The rf linac includes a plurality of resonators each includes an inductor circuit L(k), k=1,2,3, . . . , n′ where n′ is a second integer, wherein the inductor circuit connected to at least two electrodes E(j′), j′=1,2,3, . . . (n−1), for applying an accelerating rf voltage thereto. The rf linac further includes a plurality sets of transverse focusing lenses, represented by Lenses(j), where j=1,2,3, . . . n, and n is an integer, for guiding and focusing an ion beam. Each of the electrodes E(j′) disposed between and aligned with two sets of the transverse focusing lenses Lenses(J′) and Lenses(J′+1), j′=1,2,3, . . . (n−1), as a linear array. In a preferred embodiment, at least two of the adjacent electrodes E(j′) and E(j′+1) are connected to a same inductor circuit L(k). In another preferred embodiment, at least two of the adjacent electrodes E(j′) and E(j′+1) are connected to two different inductor circuits L(k1) and L(k2) where k1 and k2 are two different integers and k1 and k2 are smaller than n′. The energy gain from a resonator of this invention is twice or multiple of the energy gain from a single-electrode resonator with the same rf power efficiency.

摘要翻译： 在本发明中公开了一种新的射频（RF）线性加速器（直线加速器）。 rf直线加速器包括多个谐振器，每个谐振器包括电感器电路L（k），k = 1,2,3。 。 。 ，n'，其中n'是第二整数，其中所述电感器电路连接到至少两个电极E（j'），j'= 1,2,3。 。 。 （n-1），用于向其施加加速rf电压。 rf线性加速器还包括由透镜（j）表示的多组横向聚焦透镜，其中j = 1,2,3。 。 。 n，n为整数，用于引导和聚焦离子束。 每个电极E（j'）设置在两组横向聚焦透镜透镜（J'）和透镜（J'+ 1）之间并与之对准，j'= 1,2,3。 。 。 （n-1），作为线性阵列。 在优选实施例中，相邻电极E（j'）和E（j'+ 1）中的至少两个连接到相同的电感器电路L（k）。 在另一优选实施例中，至少两个相邻电极E（j'）和E（j'+ 1）连接到两个不同的电感器电路L（k1）和L（k2），其中k1和k2是两个不同的整数， k1和k2小于n'。 来自本发明的谐振器的能量增益是具有相同射频功率效率的单电极谐振器的能量增益的两倍或两倍。

公开(公告)号：US06215125B1

公开(公告)日：2001-04-10

申请号：US09154426

申请日：1998-09-16

申请人： Jiong Chen ,  Brian S. Freer ,  John F. Grant ,  Lawrence T. Jacobs ,  Joseph L. Malenfant, Jr.

发明人： Jiong Chen ,  Brian S. Freer ,  John F. Grant ,  Lawrence T. Jacobs ,  Joseph L. Malenfant, Jr.

IPC分类号： H01J2700

CPC分类号： H01J27/08 ,  H01J2237/08 ,  H01J2237/31701

摘要： The present invention provides a method of extending, i.e. prolonging, the operating lifetime of hot cathode discharge ion source by utilizing and introducing a nitrogen-containing co-bleed gas into an ion implantation apparatus which contains at least a hot cathode discharge ion source and an ion implantation gas such as GeF4.

摘要翻译： 本发明提供一种通过利用并将含氮共渗气体引入到至少含有热阴极放电离子源的离子注入装置中来延长，即延长热阴极放电离子源的使用寿命的方法， 离子注入气体如GeF4。

公开(公告)号：US6050218A

公开(公告)日：2000-04-18

申请号：US162096

申请日：1998-09-28

申请人： Jiong Chen ,  Peter Kellerman ,  A. Stuart Denholm

发明人： Jiong Chen ,  Peter Kellerman ,  A. Stuart Denholm

IPC分类号： H01J37/317 ,  C23C14/48 ,  H01J37/32 ,  H01L21/265 ,  C23C16/00

CPC分类号： H01J37/32412 ,  C23C14/48 ,  H01J37/3299 ,  H01J2237/31703

摘要： Method and apparatus for causing ions to impact a workpiece implantation surface. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment. An energy source sets up an ion plasma within the process chamber. A support positions one or more workpieces within an interior region of the process chamber so that an implantation surface of the one or more workpieces is positioned within the ion plasma. A pulse generator in electrical communication with the workpiece support applies electrical pulses for attracting ions to the support. One or more dosimetry cups including an electrically biased ion collecting surface are disposed around the workpiece support to measure implantation current. An implantation controller monitors signals from the one or more dosimetry cups to control ion implantation of the workpiece.

摘要翻译： 使离子撞击工件注入表面的方法和装置。 处理室限定一个室内部，一个或多个工件可以插入其中用于离子处理。 能量源在处理室内建立离子等离子体。 支撑件将一个或多个工件定位在处理室的内部区域内，使得一个或多个工件的注入表面位于离子等离子体内。 与工件支撑件电连通的脉冲发生器施加用于将离子吸引到支撑件的电脉冲。 包括电偏置离子收集表面的一个或多个剂量学杯设置在工件支撑件周围以测量注入电流。 植入控制器监测来自一个或多个剂量杯的信号以控制工件的离子注入。

公开(公告)号：US08502160B2

公开(公告)日：2013-08-06

申请号：US12957294

申请日：2010-11-30

申请人： Jiong Chen

发明人： Jiong Chen

IPC分类号： G21K1/08

CPC分类号： H01J37/32669 ,  G21K1/093 ,  G21K5/04 ,  H01J37/1471 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/24542

摘要： A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

公开(公告)号：US08039821B2

公开(公告)日：2011-10-18

申请号：US12661523

申请日：2010-03-18

申请人： Jiong Chen

发明人： Jiong Chen

IPC分类号： H01J37/317

CPC分类号： H01J37/05 ,  H01J37/3171 ,  H01J2237/047 ,  H01J2237/31701

摘要： An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit.

摘要翻译： 本发明公开了一种高能离子注入装置。 新的和改进的系统可以在远光透射率下具有广泛的离子束能量和对于不同的离子种类具有灵活的操作模式。 这种高能量注入系统可以通过去除RF线性离子加速单元而转换为中等电流。

公开(公告)号：US07851767B2

公开(公告)日：2010-12-14

申请号：US12053076

申请日：2008-03-21

申请人： Jiong Chen

发明人： Jiong Chen

IPC分类号： G21K1/08

CPC分类号： H01J37/32669 ,  G21K1/093 ,  G21K5/04 ,  H01J37/1471 ,  H01J37/3007 ,  H01J37/3171 ,  H01J37/3172 ,  H01J2237/24542

摘要： A beam control assembly to shape a ribbon beam of ions for ion implantation includes a first bar, second bar, first coil of windings of electrical wire, second coil of windings of electrical wire, first electrical power supply, and second electrical power supply. The first coil is disposed on the first bar. The first coil is the only coil disposed on the first bar. The second bar is disposed opposite the first bar with a gap defined between the first and second bars. The ribbon beam travels between the gap. The second coil is disposed on the second bar. The second coil is the only coil disposed on the second bar. The first electrical power supply is connected to the first coil without being electrically connected to any other coil. The second electrical power supply is connected to the second coil without being electrically connected to any other coil.

摘要翻译： 用于成形用于离子注入的离子束带的束控制组件包括第一杆，第二杆，电线的绕组的第一线圈，电线的第二绕组线圈，第一电源和第二电源。 第一线圈设置在第一杆上。 第一线圈是设置在第一条上的唯一线圈。 第二杆与第一杆相对地设置，在第一和第二杆之间限定有间隙。 带状光束在间隙之间传播。 第二线圈设置在第二杆上。 第二线圈是设置在第二杆上的唯一线圈。 第一电源连接到第一线圈而不与任何其它线圈电连接。 第二电源连接到第二线圈而不与任何其它线圈电连接。

公开(公告)号：US20100237231A1

公开(公告)日：2010-09-23

申请号：US12661480

申请日：2010-03-18

申请人： Jiong Chen

发明人： Jiong Chen

IPC分类号： H01J37/317 ,  H01J49/26 ,  H01J37/147

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/1475 ,  H01J2237/153 ,  H01J2237/166 ,  H01J2237/24528 ,  H01J2237/24542 ,  H01J2237/30433 ,  H01J2237/30483

摘要： An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for forming a converging beam on AMU-non-dispersive plane therefrom. The ion implantation apparatus includes magnetic scanner prior to a magnetic analyzer for scanning the beam on the non-dispersive plane, the magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. A rectangular quadruple magnet is provided to collimate the scanned ion beam and fine corrections of the beam incident angles onto a target. A deceleration or acceleration system incorporating energy filtering is at downstream of the beam collimator. A two-dimensional mechanical scanning system for scanning the target is disclosed, in which a beam diagnostic means is build in.

摘要翻译： 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于在其AMU非分散平面上形成会聚束的离子提取装置。 离子注入装置包括在用于扫描非分散平面上的束的磁分析仪之前的磁扫描器，用于选择具有特定质荷比的离子的磁分析器通过质量狭缝以投射到基底上。 提供矩形四极磁体以准直扫描的离子束并将光束入射角精细校正到目标上。 结合能量过滤的减速或加速系统位于射束准直仪的下游。 公开了一种用于扫描目标的二维机械扫描系统，其中构建了光束诊断装置。

公开(公告)号：US07675050B2

公开(公告)日：2010-03-09

申请号：US11759876

申请日：2007-06-07

申请人： Jiong Chen

发明人： Jiong Chen

IPC分类号： H01J37/317 ,  H01J37/28

CPC分类号： H01J37/3171 ,  H01J37/05 ,  H01J37/08 ,  H01J37/1472 ,  H01J2237/04756 ,  H01J2237/057 ,  H01J2237/083 ,  H01J2237/1503 ,  H01J2237/201 ,  H01J2237/20221 ,  H01J2237/30472 ,  H01J2237/31701

摘要： An ion implantation apparatus with multiple operating modes is disclosed. The ion implantation apparatus has an ion source and an ion extraction means for extracting a ribbon-shaped ion beam therefrom. The ion implantation apparatus includes a magnetic analyzer for selecting ions with specific mass-to-charge ratio to pass through a mass slit to project onto a substrate. Multipole lenses are provided to control beam uniformity and collimation. A two-path beamline in which a second path incorporates a deceleration or acceleration system incorporating energy filtering is disclosed. Finally, methods of ion implantation are disclosed in which the mode of implantation may be switched from one-dimensional scanning of the target to two-dimensional scanning.

摘要翻译： 公开了一种具有多种工作模式的离子注入装置。 离子注入装置具有离子源和用于从其提取带状离子束的离子提取装置。 离子注入装置包括用于选择具有特定质荷比的离子的磁分析器，以通过质量狭缝投影到基底上。 提供多极镜头以控制光束的均匀性和准直。 公开了一种二路光束线，其中第二路径包括并入能量过滤的减速或加速系统。 最后，公开了离子注入的方法，其中注入模式可以从目标的一维扫描切换到二维扫描。