公开(公告)号：US08894768B2

公开(公告)日：2014-11-25

申请号：US12985649

申请日：2011-01-06

申请人： Byoung-Keon Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Ivan Maidanchuk ,  Byung-Soo So ,  Jae-Wan Jung

发明人： Byoung-Keon Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Heung-Yeol Na ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Won-Bong Baek ,  Ivan Maidanchuk ,  Byung-Soo So ,  Jae-Wan Jung

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  C23C16/46 ,  C23C16/458 ,  C23C16/455 ,  H01L21/673

摘要： A substrate processing apparatus that simultaneously forms thin films on a plurality of substrates and performs heat treatment includes: a plurality of substrate holders, each including a substrate support that supports a substrate and a first gas pipe having one or a plurality of injection holes; a boat where the plurality of substrate holders are stacked and including a second gas pipe connected with the first gas pipe of each of the substrate holders; a process chamber providing a space in which the substrates stacked in the boat are processed; a conveying unit that carries the boat into/out of the process chamber; a first heating unit disposed outside the process chamber; and a gas supply unit including a third gas pipe connected with the second gas pipe and supplying a heated or cooled gas into the second gas pipe.

公开(公告)号：US08815016B2

公开(公告)日：2014-08-26

申请号：US12857723

申请日：2010-08-17

申请人： Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： C23C16/00

CPC分类号： H01L21/67109 ,  C23C16/46

摘要： A substrate processing apparatus includes a heating unit that heats a processing chamber that processes a plurality of substrates and that quickly cools the processing chamber after the processing. The heating unit includes a body having an intake port and an exhaust port, one or more heaters located inside the body, a cooler connected to the intake port of the body, an exhaust pump connected to the exhaust port of the body, and a controller controlling the cooler. The substrate processing apparatus includes a boat in which a plurality of substrates are stacked, a processing chamber providing a space in which the substrates are processed, a transfer unit carrying the boat into or out of the processing chamber, and the heating unit located outside the processing chamber.

摘要翻译： 基板处理装置包括加热单元，加热处理多个基板的处理室，并且在处理之后快速地冷却处理室。 加热单元包括具有进气口和排气口的主体，位于主体内部的一个或多个加热器，连接到主体进气口的冷却器，连接到主体排气口的排气泵，以及控制器 控制冷却器。 衬底处理装置包括堆叠多个衬底的舟皿，提供衬底处理的空间的处理室，将处理室中的船运送到处理室内的传送单元和位于处理室外的加热单元 处理室。

公开(公告)号：US08771420B2

公开(公告)日：2014-07-08

申请号：US12714019

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Won-Bong Baek ,  Jae-Wan Jung

发明人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Yun-Mo Chung ,  Tae-Hoon Yang ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Won-Bong Baek ,  Jae-Wan Jung

IPC分类号： C23C16/46 ,  H01L21/306 ,  C23F1/00 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01L21/67109

摘要： A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.

摘要翻译： 一种基板处理装置，其通过均匀加热基板，在多个基板上形成薄膜并对基板进行热处理。 基板处理装置包括处理室，堆叠基板的船，位于处理室外的外部加热器，将船移入和移出处理室的进给器，位于进料器下方的下加热器，以及 位于船中心的中央加热器。

公开(公告)号：US20130009177A1

公开(公告)日：2013-01-10

申请号：US13492144

申请日：2012-06-08

申请人： Seok-Rak Chang ,  Myeng-Woo Nam ,  Hee-Cheol Kang ,  Jong-Heon Kim ,  Jong-Won Hong ,  Uno Chang

发明人： Seok-Rak Chang ,  Myeng-Woo Nam ,  Hee-Cheol Kang ,  Jong-Heon Kim ,  Jong-Won Hong ,  Uno Chang

IPC分类号： H01L51/56 ,  B05C11/00 ,  B05C13/00 ,  H01L51/52 ,  B05C15/00

CPC分类号： C23C14/12 ,  B05B12/20 ,  B05B12/22 ,  B05B13/0221 ,  B05D1/60 ,  C23C14/042 ,  C23C14/24 ,  C23C14/50 ,  H01L21/67173 ,  H01L21/67709 ,  H01L21/6776 ,  H01L21/67784 ,  H01L21/6831 ,  H01L27/3244 ,  H01L27/3246 ,  H01L51/56

摘要： An organic layer deposition apparatus, and a method of manufacturing an organic light-emitting display device using the organic layer deposition apparatus. The organic layer deposition apparatus includes: an electrostatic chuck that fixedly supports a substrate that is a deposition target; a deposition unit including a chamber maintained at a vacuum and an organic layer deposition assembly for depositing an organic layer on the substrate fixedly supported by the electrostatic chuck; and a first conveyer unit for moving the electrostatic chuck fixedly supporting the substrate into the deposition unit, wherein the first conveyer unit passes through inside the chamber, and the first conveyer unit includes a guide unit having a receiving member for supporting the electrostatic chuck to be movable in a direction.

摘要翻译： 有机层沉积装置以及使用有机层沉积装置的有机发光显示装置的制造方法。 有机层沉积装置包括：静电卡盘，其固定地支撑作为沉积靶的基板; 包括保持真空的室的沉积单元和用于在由静电卡盘固定地支撑的基板上沉积有机层的有机层沉积组件; 以及第一输送单元，用于将固定地支撑所述基板的所述静电卡盘移动到所述沉积单元中，其中所述第一输送单元穿过所述室内部，并且所述第一输送单元包括导向单元，所述引导单元具有用于支撑所述静电卡盘的接收构件 可沿方向移动

公开(公告)号：US20110139612A1

公开(公告)日：2011-06-16

申请号：US12926115

申请日：2010-10-27

申请人： Heung-Yeol Na ,  Jong-Won Hong ,  Seok-Rak Chang ,  Ki-Yong Lee

发明人： Heung-Yeol Na ,  Jong-Won Hong ,  Seok-Rak Chang ,  Ki-Yong Lee

IPC分类号： C23C14/14 ,  C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32477 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/345

摘要： A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.

摘要翻译： 溅射装置包括具有第一和第二区域的处理室，处理室内部的金属靶，处理室内的目标传送单元，目标传送单元构造成在第一和第二区域之间移动金属靶，衬底 保持器在处理室的第二区域中，以及在处理室的第一区域中的磁性组件，磁性组件插入在目标转印单元和处理室的壁之间。

公开(公告)号：US20110070360A1

公开(公告)日：2011-03-24

申请号：US12711495

申请日：2010-02-24

申请人： Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

发明人： Jong-Won Hong ,  Min-Jae Jeong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang

IPC分类号： C23C16/52 ,  B05C11/00

CPC分类号： F17D1/02 ,  C23C16/4485 ,  C23C16/52 ,  Y10T137/0318

摘要： Provided are a source gas supply unit capable of supplying a constant amount of source gas to a deposition chamber to deposit a uniform layer, and a deposition apparatus and method using the same. The source gas supply unit includes a canister in which a source is stored, a heater heating the canister, a source gas supply pipe provided on one side of the canister, a measuring unit installed on the source gas supply pipe and measuring an amount of source gas passing through the source gas supply pipe, and a temperature controller connected to the heater and the measuring unit. The temperature controller controls the heater based on the amount of the source gas measured by the measuring unit.

摘要翻译： 提供能够向沉积室供给恒定量的源气体以沉积均匀层的源气体供应单元，以及使用该源气体供应单元的沉积设备和方法。 源气体供给单元包括储存有源的罐，加热罐的加热器，设置在罐的一侧的源气体供给管，安装在源气体供给管上并测量源的量的测量单元 通过原料气体供给管的气体以及连接到加热器和测量单元的温度控制器。 温度控制器基于由测量单元测量的源气体的量来控制加热器。

公开(公告)号：US20110008540A1

公开(公告)日：2011-01-13

申请号：US12831492

申请日：2010-07-07

申请人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Ivan Maidanchuk ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung

发明人： Heung-Yeol Na ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Ivan Maidanchuk ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Jae-Wan Jung

IPC分类号： C23C16/448 ,  C23C16/52 ,  C23C16/06 ,  C23C16/00

CPC分类号： C23C16/45525 ,  C23C16/4481 ,  C23C16/45544 ,  C23C16/52 ,  Y10T137/6416

摘要： A deposition apparatus, and a canister for the deposition apparatus capable of maintaining a predetermined amount of source material contained in a reactive gas supplied to a deposition chamber when the source material is deposited on a substrate by atomic layer deposition includes a main body, a source storage configured to store a source material, a heater disposed outside the main body, and a first feed controller configured to control the source material supplied to the main body from the source storage.

摘要翻译： 当原料通过原子层沉积沉积在基板上时，沉积设备和用于沉积设备的罐能够保持供应到沉积室的反应气体中包含的预定量的源材料，包括主体，源 存储器，其被配置为存储源材料，设置在主体外部的加热器;以及第一馈送控制器，被配置为控制从源存储器供应到主体的源材料。

公开(公告)号：US20100227458A1

公开(公告)日：2010-09-09

申请号：US12714252

申请日：2010-02-26

申请人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

发明人： Yun-Mo CHUNG ,  Ki-Yong Lee ,  Min-Jae Jeong ,  Jin-Wook Seo ,  Jong-Won Hong ,  Heung-Yeol Na ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Tae-Hoon Yang ,  Ji-Su Ahn ,  Young-Dae Kim ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Sang-Yon Yoon ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Maxim Lisachenko

IPC分类号： H01L21/20 ,  C23C16/48

CPC分类号： H01L21/02532 ,  C23C14/04 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672

摘要： A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

摘要翻译： 一种形成多晶硅层的方法和用于其的原子层沉积装置。 该方法包括在衬底上形成非晶硅层，将具有非晶硅层的衬底暴露于亲水或疏水性气体气氛，在非晶硅层上放置具有至少一个开放和至少一个封闭部分的掩模，照射UV 使用UV灯朝向非晶硅层和掩模发光，在非晶硅层上沉积结晶诱导金属，并退火基板以使非晶硅层结晶成多晶硅层。 该方法和装置提供了在多晶硅层的形成中控制种子位置和晶粒尺寸。

公开(公告)号：US08512530B2

公开(公告)日：2013-08-20

申请号：US12926115

申请日：2010-10-27

申请人： Heung-Yeol Na ,  Jong-Won Hong ,  Seok-Rak Chang ,  Ki-Yong Lee

发明人： Heung-Yeol Na ,  Jong-Won Hong ,  Seok-Rak Chang ,  Ki-Yong Lee

IPC分类号： C23C14/35

CPC分类号： C23C14/3407 ,  C23C14/35 ,  H01J37/3244 ,  H01J37/32458 ,  H01J37/32477 ,  H01J37/3411 ,  H01J37/3417 ,  H01J37/345

摘要： A sputtering apparatus includes a process chamber having first and second regions, a metal target inside the process chamber, a target transfer unit inside the process chamber, the target transfer unit being configured to move the metal target between the first and second regions, a substrate holder in the second region of the process chamber, and a magnetic assembly in the first region of the process chamber, the magnetic assembly being interposed between the target transfer unit and a wall of the process chamber.

摘要翻译： 溅射装置包括具有第一和第二区域的处理室，处理室内部的金属靶，处理室内的目标传送单元，目标传送单元构造成在第一和第二区域之间移动金属靶，衬底 保持器在处理室的第二区域中，以及在处理室的第一区域中的磁性组件，磁性组件插入在目标转印单元和处理室的壁之间。

公开(公告)号：US08373097B2

公开(公告)日：2013-02-12

申请号：US12713982

申请日：2010-02-26

申请人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

发明人： Heung-Yeol Na ,  Min-Jae Jeong ,  Jong-Won Hong ,  Eu-Gene Kang ,  Seok-Rak Chang ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Tae-Hoon Yang ,  Yun-Mo Chung ,  Byung-Soo So ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Won-Bong Baek ,  Jong-Ryuk Park ,  Bo-Kyung Choi ,  Ivan Maidanchuk ,  Jae-Wan Jung

IPC分类号： F27D11/00 ,  A21B1/00 ,  A21B1/22

CPC分类号： F27B17/0025 ,  H01L21/67109

摘要： An apparatus for thermally processing a plurality of substrates including a process chamber into which a boat having a plurality of substrates stacked thereon is loaded, and a heater chamber separate from the process chamber and having a plurality of heaters to apply heat to the process chamber. Here, the heaters are installed to correspond to all sides of the plurality of substrates. Therefore, it is possible to minimize a temperature distribution in the process chamber and uniformly supply heat to the entire region of the plurality of substrates.

摘要翻译： 一种用于热加工多个基板的装置，包括处理室，其中堆叠有多个基板的船只装载在该处理室中;以及加热器室，与处理室分离并具有多个加热器以向处理室施加热量。 这里，加热器安装成对应于多个基板的所有侧面。 因此，可以使处理室中的温度分布最小化并且均匀地向多个基板的整个区域供给热量。