Ribbon beam ion implanter cluster tool
    21.
    发明申请
    Ribbon beam ion implanter cluster tool 有权
    丝带束离子注入机群集工具

    公开(公告)号:US20070262271A1

    公开(公告)日:2007-11-15

    申请号:US11432977

    申请日:2006-05-12

    Abstract: An ion implantation cluster tool for implanting ions into a workpiece is provided, wherein a plurality of beamline assemblies having a respective plurality of ion beamlines associated therewith are positioned about a common process chamber. Each of the plurality of ion beamline assemblies are selectively isolated from the common process chamber, and the plurality of beamline intersect at a processing region of the process chamber. A scanning apparatus positioned within the common process chamber is operable to selectively translate a workpiece holder in one or more directions through each of the plurality of ion beamlines within the processing region, and a common dosimetry apparatus within the common process chamber is operable to measure one or more properties of each of the plurality of ion beamlines. A load lock chamber is operably coupled to the common process chamber for exchange of workpieces between the common process chamber and an external environment.

    Abstract translation: 提供了用于将离子注入到工件中的离子注入簇工具,其中具有与其相关联的多个离子束线的多个束线组件围绕公共处理室定位。 多个离子束线组件中的每一个与公共处理室选择性地隔离,并且多个束线在处理室的处理区域相交。 定位在公共处理室内的扫描设备可操作以选择性地将工件保持器在一个或多个方向上通过处理区域内的多个离子束线中的每一个,并且公共处理室内的常见剂量测量装置可操作以测量一个 或更多的多个离子束线中的每一个的性质。 负载锁定室可操作地联接到公共处理室,用于在公共处理室和外部环境之间交换工件。

    Method and apparatus for scanning a workpiece in a vacuum chamber of an ion beam implanter

    公开(公告)号:US07276712B2

    公开(公告)日:2007-10-02

    申请号:US11173494

    申请日:2005-07-01

    Applicant: Joseph Ferrara

    Inventor: Joseph Ferrara

    Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of an implantation surface of the workpiece by the ion beam. The implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece within an interior region of the implantation chamber, the workpiece support structure. The workpiece support structure includes a rotation member coupled to the implantation chamber for changing an implantation angle of the workpiece with respect to a portion of the ion beam within the implantation chamber. The workpiece support structure also includes a translation member movably coupled to the rotation member and supporting the workpiece for movement along a path of travel wherein at least some components of the translation member components are disposed within a reduced pressure translation member chamber. The translation member chamber is isolated from the implantation chamber interior region by a dynamic seal. A workpiece holder support arm of the translation member extends through the dynamic seal and into the implantation chamber.

    Wafer 2D scan mechanism
    23.
    发明授权
    Wafer 2D scan mechanism 失效
    晶圆2D扫描机制

    公开(公告)号:US07112808B2

    公开(公告)日:2006-09-26

    申请号:US10786660

    申请日:2004-02-25

    CPC classification number: H01J37/3171 H01J2237/20228

    Abstract: The present invention is directed to a scanning apparatus and method for processing a substrate, wherein the scanning apparatus comprises a base portion and a rotary subsystem. The rotary subsystem comprises a first link comprising a first joint, wherein the first link is rotatably coupled to the base portion by the first joint, and a second link comprising a second joint, wherein the second link is rotatably coupled to the first link by the second joint. The first joint and the second joint are spaced a predetermined distance from one another. The second link further comprising an end effector whereon the substrate resides, and wherein the end effector is operably coupled to the second link. The end effector is further spaced from the second joint by the predetermined distance, wherein a rotation of the first link and second link in a respective first direction and second direction is operable to linearly oscillate the end effector along a linear first scan path, and wherein the rotational velocity of the first link and second link does not cross zero.

    Abstract translation: 本发明涉及一种用于处理基板的扫描装置和方法,其中扫描装置包括基部和旋转子系统。 所述旋转子系统包括第一连杆,所述第一连杆包括第一接头,其中所述第一连杆通过所述第一接头可旋转地联接到所述基座部分,所述第二连杆包括第二接头,其中所述第二连杆通过所述第一接头可旋转地联接到所述第一连杆 第二关节 第一关节和第二关节彼此隔开预定的距离。 所述第二连杆还包括位于所述基板上的端部执行器,并且其中所述端部执行器可操作地联接到所述第二连杆。 末端执行器与第二关节进一步间隔预定距离,其中第一连杆和第二连杆在相应的第一方向和第二方向上的旋转可操作以沿着线性第一扫描路径线性振荡末端执行器,并且其中 第一连杆和第二连杆的旋转速度不为零。

    Adjustable implantation angle workpiece support structure for an ion beam implanter
    25.
    发明授权
    Adjustable implantation angle workpiece support structure for an ion beam implanter 失效
    用于离子束注入机的可调植入角工件支撑结构

    公开(公告)号:US06900444B2

    公开(公告)日:2005-05-31

    申请号:US10869368

    申请日:2004-06-16

    Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a first rotation member rotatably coupled to the implantation chamber and overlaying an opening in the implantation chamber. The workpiece support structure further includes a second rotation member rotatably coupled to the first rotation member and having a rotating shaft that protrudes through the first member and an axis of rotation offset from an axis of rotation of the first rotation member. The workpiece support structure also includes a third member fixedly attached to the second rotation member that extends into the implantation chamber, the third member including a rotatable drive supporting the workpiece having an axis of rotation offset from the axis of rotation of the first rotation member. The first rotation member, the second rotation member and the rotatable drive of the third rotation member rotate to move the workpiece along a path of travel for implantation of the implantation surface wherein a distance that the ion beam moves through the implantation chamber before striking the implantation surface of the workpiece is constant.

    Abstract translation: 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和注入室,其中工件被定位成与离子束相交,用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地联接到植入室并覆盖植入室中的开口的第一旋转构件。 工件支撑结构还包括第二旋转构件,其可旋转地联接到第一旋转构件并且具有从第一构件突出的旋转轴和从第一旋转构件的旋转轴线偏移的旋转轴。 工件支撑结构还包括固定地附接到第二旋转构件的第三构件,其延伸到注入室中,第三构件包括支撑工件的可旋转驱动装置,其具有偏离第一旋转构件的旋转轴线的旋转轴线。 第一旋转构件,第二旋转构件和第三旋转构件的可旋转驱动器旋转以沿着用于注入植入表面的移动路径移动工件,其中在撞击植入之前离子束移动通过注入室的距离 工件表面是恒定的。

    Adjustable implantation angle workpiece support structure for an ion beam implanter
    26.
    发明授权
    Adjustable implantation angle workpiece support structure for an ion beam implanter 有权
    用于离子束注入机的可调植入角工件支撑结构

    公开(公告)号:US06710360B2

    公开(公告)日:2004-03-23

    申请号:US10192344

    申请日:2002-07-10

    Applicant: Joseph Ferrara

    Inventor: Joseph Ferrara

    Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. The ion beam implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece. The workpiece support structure includes a rotation member rotatably affixed to the implantation chamber. Rotation of the rotation member with respect to the implantation chamber changes an implantation angle of the workpiece with respect to the portion of the ion beam beam line within the implantation chamber. The workpiece support structure further includes a translation member movably coupled to the rotation member and supporting the workpiece for linear movement along a path of travel. The traslation member moves along a direction of movement such that a distance that the ion moves through the implantation chamber remains constant during movement of the workpiece along its path of travel.

    Abstract translation: 离子束注入机包括用于产生沿着束线移动的离子束的离子束源和真空或注入室,其中工件被定位成与离子束相交,用于通过离子束离子注入工件的表面。 离子束注入机还包括耦合到注入室并支撑工件的工件支撑结构。 工件支撑结构包括可旋转地固定到植入室的旋转构件。 旋转构件相对于注入室的旋转改变了工件相对于植入室内的离子束束线的部分的注入角度。 工件支撑结构还包括平移构件,其可移动地联接到旋转构件并且支撑工件以沿着行进路径线性移动。 扫掠构件沿着移动方向移动,使得离子移动通过植入室的距离在工件沿其行进路径移动期间保持恒定。

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