公开(公告)号：US11114491B2

公开(公告)日：2021-09-07

申请号：US16562396

申请日：2019-09-05

Applicant: KLA Corporation

Inventor： Yung-Ho Alex Chuang ,  Jehn-Huar Chern ,  John Fielden ,  Jingjing Zhang ,  David L. Brown ,  Sisir Yalamanchili

IPC: H01L27/146 ,  H01L27/148

Abstract: An image sensor utilizes a pure boron layer and a second epitaxial layer having a p-type dopant concentration gradient to enhance sensing DUV, VUV or EUV radiation. Sensing (circuit) elements and associated metal interconnects are fabricated on an upper surface of a first epitaxial layer, then the second epitaxial layer is formed on a lower surface of the first epitaxial layer, and then a pure boron layer is formed on the second epitaxial layer. The p-type dopant concentration gradient is generated by systematically increasing a concentration of p-type dopant in the gas used during deposition/growth of the second epitaxial layer such that a lowest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with the first epitaxial layer, and such that a highest p-type dopant concentration of the second epitaxial layer occurs immediately adjacent to the interface with pure boron layer.

公开(公告)号：US11011366B2

公开(公告)日：2021-05-18

申请号：US16879310

申请日：2020-05-20

Applicant: KLA Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Edgardo Garcia-Berrios ,  John Fielden

IPC: H01J61/067 ,  G01N21/88 ,  H01J61/10 ,  G01N21/95

Abstract: A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

公开(公告)号：US10921261B2

公开(公告)日：2021-02-16

申请号：US16819991

申请日：2020-03-16

Applicant: KLA Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Elena Loginova ,  John Fielden

IPC: G03F1/36 ,  G03F7/20 ,  G01N21/95 ,  G02F1/35 ,  G02F1/355 ,  G02B21/00 ,  G02B5/28 ,  G02B21/06 ,  G01N21/33 ,  G02B21/16 ,  H01L21/66

Abstract: Strontium tetraborate is used as an optical coating material for optical components utilized in semiconductor inspection and metrology systems to take advantage of its high refractive indices, high optical damage threshold and high microhardness in comparison to conventional optical materials. At least one layer of strontium tetraborate is formed on the light receiving surface of an optical component's substrate such that its thickness serves to increase or decrease the reflectance of the optical component. One or multiple additional coating layers may be placed on top of or below the strontium tetraborate layer, with the additional coating layers consisting of conventional optical materials. The thicknesses of the additional layers may be selected to achieve a desired reflectance of the optical component at specific wavelengths. The coated optical component is used in an illumination source or optical system utilized in a semiconductor inspection system, a metrology system or a lithography system.

公开(公告)号：US20240313032A1

公开(公告)日：2024-09-19

申请号：US18671172

申请日：2024-05-22

Applicant: KLA Corporation

Inventor： Sisir Yalamanchili ,  John Fielden ,  Francisco Kole ,  Yung-Ho Alex Chuang

IPC: H01L27/146 ,  G03F7/00

CPC classification number: H01L27/14698 ,  G03F7/70033 ,  H01L27/1464

Abstract: Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.

公开(公告)号：US11899338B2

公开(公告)日：2024-02-13

申请号：US17991198

申请日：2022-11-21

Applicant: KLA Corporation

Inventor： Yung-Ho Alex Chuang ,  Kelly Mauser ,  Baigang Zhang ,  Xuefeng Liu ,  John Fielden ,  Yinying Xiao-Li ,  Elena Loginova

IPC: G02F1/35 ,  G02F1/355 ,  G02F1/39 ,  G02F1/37 ,  G01N21/47 ,  G01N21/95 ,  H01S3/16

CPC classification number: G02F1/3534 ,  G01N21/4738 ,  G02F1/3507 ,  G02F1/3542 ,  G02F1/3548 ,  G02F1/3551 ,  G02F1/37 ,  G02F1/392 ,  G01N21/9501 ,  G01N2201/06113 ,  G02F2203/11 ,  H01S3/1625 ,  H01S3/1636

Abstract: A nonlinear crystal including stacked strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency doubling stage of a laser assembly to generate laser output light having a wavelength in the range of about 180 nm to 200 nm. One or more fundamental laser beams are frequency doubled, down-converted and/or summed using one or more frequency conversion stages to generate an intermediate frequency light with a corresponding wavelength in the range of about 360 nm to 400 nm, and then the final frequency converting stage utilizes the nonlinear crystal to double the frequency of the intermediate frequency light to generate the desired laser output light at high power. Methods, inspection systems, lithography systems and cutting systems incorporating the laser assembly are also described.

公开(公告)号：US11848350B2

公开(公告)日：2023-12-19

申请号：US17197292

申请日：2021-03-10

Applicant: KLA Corporation

Inventor： Abbas Haddadi ,  Sisir Yalamanchili ,  John Fielden ,  Yung-Ho Alex Chuang

IPC: H01L27/14 ,  H01L27/146 ,  H01L27/148

CPC classification number: H01L27/14687 ,  H01L27/1464 ,  H01L27/14806

Abstract: An image sensor is fabricated by first heavily p-type doping the thin top monocrystalline silicon substrate of an SOI wafer, then forming a relatively lightly p-doped epitaxial layer on a top surface of the top silicon substrate, where p-type doping levels during these two processes are controlled to produce a p-type dopant concentration gradient in the top silicon substrate. Sensing (circuit) elements and associated metal interconnects are fabricated on the epitaxial layer, then the handling substrate and oxide layer of the SOI wafer are at least partially removed to expose a lower surface of either the top silicon substrate or the epitaxial layer, and then a pure boron layer is formed on the exposed lower surface. The p-type dopant concentration gradient monotonically decreases from a maximum level near the top-silicon/epitaxial-layer interface to a minimum concentration level at the epitaxial layer's upper surface.

公开(公告)号：US20230298847A1

公开(公告)日：2023-09-21

申请号：US18122388

申请日：2023-03-16

Applicant: KLA Corporation ,  National Institute of Advanced Industrial Science and Technology

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Edgardo García Berríos ,  John Fielden ,  Lavinia Ghirardini ,  Masayoshi Nagao

IPC: H01J37/073 ,  H01J37/28

CPC classification number: H01J37/073 ,  H01J37/28 ,  H01J2237/2812

Abstract: An electron gun for an electron microscope or similar device includes a field emitter cathode having a field emitter protrusion extending from the output surface of a monocrystalline silicon substrate, and electrodes configured to enhance the emission of electrons from a tip portion of the field emitter protrusion to generate a primary electron beam. A contiguous TiN layer is disposed directly on at least the tip portion of the field emitter protrusion using a process that minimizes oxidation and defects in the TiN layer.

公开(公告)号：US20230034635A1

公开(公告)日：2023-02-02

申请号：US17862133

申请日：2022-07-11

Applicant: KLA Corporation

Inventor： John Fielden ,  Yung-Ho Alex Chuang

IPC: G02F1/355 ,  G01N21/95 ,  G03F7/20

Abstract: An amorphous layer is used as a protective coating for hygroscopic nonlinear optical crystals. The amorphous layer consists of one or more alkali metal borates and/or alkali earth metal borates. The amorphous layer slows or prevents water and/or oxygen from diffusing into the hygroscopic nonlinear optical crystal, thus simplifying handling, storage and operating environmental requirements. One or multiple additional coating layers may be placed on top of the amorphous layer, with the additional coating layers including conventional optical materials. The thicknesses of the amorphous layer and/or additional layers may be chosen to reduce reflectance of the optical component at one or more specific wavelengths. The coated nonlinear optical crystal is used in an illumination source utilized in a semiconductor inspection system, a metrology system, or a lithography system.

公开(公告)号：US20220254829A1

公开(公告)日：2022-08-11

申请号：US17544413

申请日：2021-12-07

Applicant: KLA Corporation

Inventor： Sisir Yalamanchili ,  John Fielden ,  Francisco Kole ,  Yung-Ho Alex Chuang

IPC: H01L27/146 ,  G03F7/20

Abstract: Back-illuminated DUV/VUV/EUV radiation or charged particle image sensors are fabricated using a method that utilizes a plasma atomic layer deposition (plasma ALD) process to generate a thin pinhole-free pure boron layer over active sensor areas. Circuit elements are formed on a semiconductor membrane's frontside surface, and then an optional preliminary hydrogen plasma cleaning process is performed on the membrane's backside surface. The plasma ALD process includes performing multiple plasma ALD cycles, with each cycle including forming an adsorbed boron precursor layer during a first cycle phase, and then generating a hydrogen plasma to convert the precursor layer into an associated boron nanolayer during a second cycle phase. Gasses are purged from the plasma ALD process chamber after each cycle phase. The plasma ALD cycles are repeated until the resulting stack of boron nanolayers has a cumulative stack height (thickness) that is equal to a selected target thickness.

公开(公告)号：US20220107544A1

公开(公告)日：2022-04-07

申请号：US17553705

申请日：2021-12-16

Applicant: KLA Corporation

Inventor： Yung-Ho Alex Chuang ,  Yinying Xiao-Li ,  Elena Loginova ,  John Fielden ,  Baigang Zhang

IPC: G02F1/355 ,  G02F1/35

Abstract: An optical element includes Strontium tetraborate SrB4O7 (SBO) crystal plates that are cooperatively configured to create a periodic structure for quasi-phase-matching (QPM) is used in the final frequency converting stage of a laser assembly to generate laser output light having a wavelength in the range of 125 nm to 183 nm. One or more fundamental light beams having fundamental wavelengths between 1 and 1.1 μm are doubled and/or summed using multiple intermediate frequency conversion stages to generate one or more intermediate light beam frequencies (e.g., second through eighth harmonics, or sums thereof), and then the final frequency converting stage utilizes the optical element to either double a single intermediate light beam frequency or to sum two intermediate light beam frequencies to generate the desired laser output light at high power and photon energy levels. A method and inspection system incorporating the laser assembly is also described.